arXiv subjects

Weixing Huang

Publications and source records attributed to Weixing Huang.

3 recordsLinked to original sources

arXiv2026

Inverse probability weighting for auxiliary variable dependent sampling in observational studies of Long COVID

Selective testing based on values of auxiliary variables is an increasingly popular design strategy in observational studies and is ubiquitous in electronic health record data. Ignoring this underlying sampling mechanism can lead to biased estimation and erroneous scientific conclusions. Yet, rigorous analytic methods for accounting for two-phase sampling designs in observational settings remain under-utilized. Motivated by the Researching COVID to Enhance Recovery (RECOVER) Adult and Pediatric observational cohort studies, we describe common pitfalls and an approach for analysis of data collected via auxiliary variable dependent sampling.

stat.ME↗

arXiv2020

The Investigation of Negative Capacitance Vertical Nanowire FETs Based on SPICE Model at Device-Circuit Level

In this study, a SPICE model for negative capacitance vertical nanowire field-effect-transistor (NC VNW-FET) based on BSIM-CMG model and Landau-Khalatnikov (LK) equation was presented. Suffering from the limitation of short gate length there is lack of controllable and integrative structures for high performance NC VNW-FETs. A new kind of structure was proposed for NC VNW-FETs at sub-3nm node. Moreover, in order to understand and improve NC VNW-FETs, the S-shaped polarization-voltage curve (S-curve) was divided into four regions and some new design rules were proposed. By using the SPICE model, device-circuit co-optimization was implemented. The co-design of gate work function (WF) and NC was investigated. A ring oscillator was simulated to analyze the circuit energy-delay, and it shown that significant energy reduction, up to 88%, at iso-delay for NC VNW-FETs at low supply voltage can be achieved. This study gives a credible method to analysis the performance of NC based devices and circuits and reveals the potential of NC VNW-FETs in low-power applications.

cs.ET↗

arXiv2019

A Novel General Compact Model Approach for 7nm Technology Node Circuit Optimization from Device Perspective and Beyond

This work presents a novel general compact model for 7nm technology node devices like FinFETs. As an extension of previous conventional compact model that based on some less accurate elements including one-dimensional Poisson equation for three-dimensional devices and analytical equations for short channel effects, quantum effects and other physical effects, the general compact model combining few TCAD calibrated compact models with statistical methods can eliminate the tedious physical derivations. The general compact model has the advantages of efficient extraction, high accuracy, strong scaling capability and excellent transfer capability. As a demo application, two key design knobs of FinFET and their multiple impacts on RC control ESD power clamp circuit are systematically evaluated with implementation of the newly proposed general compact model, accounting for device design, circuit performance optimization and variation control. The performance of ESD power clamp can be improved extremely. This framework is also suitable for pathfinding researches on 5nm node gate-all-around devices, like nanowire (NW) FETs, nanosheet (NSH) FETs and beyond.

cs.ET↗