arXiv subjects

Wen-Jian Lu

Publications and source records attributed to Wen-Jian Lu.

6 recordsLinked to original sources

arXiv2026

Interfacial Noncollinear Filtering of Spin Hall Currents

Spin Hall currents generated in nonmagnetic materials are conventionally regarded as bulk responses whose polarization is fixed by crystal symmetry. This view has motivated the search for intrinsically low-symmetry spin sources when unconventional spin polarizations are required. Here we point out that, in realistic heterostructures, the device-relevant quantity is not the fully symmetry-averaged bulk spin Hall current, but the emitted spin current transmitted across the interface. We therefore establish emitted spin currents as bulk-interface hybrid responses and propose interfacial noncollinear filtering as a mechanism to bypass the bulk-symmetry constraint. A low-symmetry interfacial spin-orbit field, generally noncollinear with the momentum-resolved spin polarization of the incident spin Hall current, imposes spin-dependent transmission and converts hidden momentum-resolved spin-polarization components into an observable unconventional emitted spin current. Using both a rotationally symmetric minimal model and a realistic high-symmetry Dirac-semimetal model, we show that conventional spin Hall sources can emit sizable out-of-plane spin currents when their hidden bulk spin Hall textures are selectively transmitted by the interfacial spin-orbit field. Our results reveal that spin-current polarization emerges from the cooperative action of bulk and interfacial responses, providing a strategy for reprogramming spin-current polarization in high-efficiency, CMOS-compatible spin Hall materials without relying on intrinsically low-symmetry bulk crystals or external symmetry-breaking schemes.

cond-mat.mes-hall↗

arXiv2026

Atom-selective spin-polarized transport in a charge-ordered altermagnet

Altermagnets provide a promising platform for spin-polarized transport without net magnetization, but their transport properties are usually discussed in terms of momentum-space spin splitting. Here, using first-principles calculations and quantum transport simulations, we show that the charge-ordered altermagnet $α$-Fe$_2$PO$_5$ exhibits a distinct form of real-space spin selectivity despite weak altermagnetic spin splitting near the Fermi level. The charge order creates inequivalent Fe$^{2+}$ and Fe$^{3+}$ sites within each sublattice, while the puckered C-type antiferromagnetic stacking suppresses inter-sublattice transport. As a result, electron and hole doping activate spin-polarized transport predominantly through Fe$^{3+}$- and Fe$^{2+}$-based channels, respectively. These atom-selective channels carry opposite spin polarizations on the two antiferromagnetic sublattices, giving rise to a globally compensated charge current with hidden Néel spin character. We further propose an all-in-one $α$-Fe$_2$PO$_5$ tunnel junction, where matching or mismatching atom-selective conduction channels yields orders-of-magnitude conductance modulation. Our findings establish a real-space design principle for atomically controlled spin functionality and spintronic devices.

cond-mat.mtrl-sci↗

arXiv2026

Magnetoelastic Transport-Path Reconstruction and Giant Magnetotransport Responses in a Two-Dimensional Antiferromagnet

Nonvolatile magnetotransport responses in a single magnetic material have generally not been expected to exhibit a large ON/OFF ratio, because they are usually tied to spin-orbit coupling and therefore remain relatively weak. Here we show, contrary to this expectation, that giant nonvolatile magnetotransport can arise in a single magnetic material through magnetoelastic reconstruction of nonrelativistic real-space transport paths. Using the two-dimensional antiferromagnet FePS$_{3}$ as a representative system, first-principles quantum transport calculations reveal that charge transport is strongly tied to its quasi-one-dimensional zigzag sublattice chains and, under suitable doping, can even become confined to them. Moreover, strain lifts the degeneracy among symmetry-related zigzag variants and thus reorients these transport paths through magnetoelastic coupling. As a result, both the longitudinal and transverse conductivities change dramatically, yielding a giant magnetoelastic magnetoresistance of up to $10^{4}$% and an energy-independent Hall ratio that far exceeds the spontaneous Hall ratios found in conventional magnets. These results establish a route to exploiting symmetry-related magnetic variants and their associated transport paths for reconfigurable, high-performance spintronic devices with large nonvolatile readout contrast.

cond-mat.mtrl-sci↗

arXiv2026

Deterministic Switching of the Néel Vector by Asymmetric Spin Torque

Néel vector, the order parameter of collinear antiferromagnets, serves as a state variable in associated antiferromagnetic (AFM) spintronic devices to encode information. A deterministic switching of Néel vector is crucial for the write-in operation, which, however, remains a challenging problem in AFM spintronics. Here we demonstrate, based on analytical derivation and macro-spin simulations, that Néel vector switching can be generally achieved via a current-induced spin torque, provided the spin accumulations responsible for this torque are non-identical between opposite sublattices. This condition occurs widely in AFM films, as symmetry equivalence between sublattice-dependent spin accumulations is usually absent, allowing unequal spin accumulations induced by Edelstein effect or a spin current. Unlike previously studied spin torques induced by uniform or staggered spin accumulations -- where either the field-like or damping-like component dominates exclusively -- the asymmetric spin torque features cooperative contributions from both components, leading to Néel vector dynamics that are fundamentally distinct from previous expectations. Crucially, the static states stabilized by the asymmetric spin torque enable versatile Néel vector switching strategies -- field-free spin-transfer torque switching during current application, as well as field-free or field-assisted spin-orbit torque switching after the current pulse -- demonstrating that established spin torque techniques from ferromagnetic spintronics can be directly adapted to AFM systems, a capability absent in previous theoretical frameworks. Our work establishes a general mechanism for current-induced Néel vector switching, which is in principle feasible for all collinear antiferromagnets, and thus paves the route to realize efficient writing in AFM spintronics.

cond-mat.mtrl-sci↗

arXiv2025

Interface-controlled antiferromagnetic tunnel junctions

Magnetic tunnel junctions (MTJs) are the key building blocks of high-performance spintronic devices. While conventional MTJs rely on ferromagnetic (FM) materials, employing antiferromagnetic (AFM) compounds can significantly increase operation speed and packing density. Current prototypes of AFM tunnel junctions (AFMTJs) exploit antiferromagnets either as spin-filter insulating barriers or as metal electrodes supporting bulk spin-dependent currents. Here, we highlight a largely overlooked AFMTJ prototype, where bulk-spin-degenerate electrodes with an A-type AFM stacking form magnetically uncompensated interfaces, enabling spin-polarized tunneling currents and a sizable tunneling magnetoresistance (TMR) effect. Using first-principles quantum-transport calculations and the van der Waals (vdW) metal Fe$_{4}$GeTe$_{2}$ as a representative A-type AFM electrode, we demonstrate a large negative TMR arising solely from the alignment of interfacial magnetic moments. This prototype of AFMTJs can also be realized with various non-vdW A-type AFM metals that support roughness-insensitive surface magnetization. Beyond TMR, AFMTJs based on A-type antiferromagnets allow convenient switching of the Néel vector, opening a new paradigm for AFM spintronics that leverages spin-dependent properties at AFM interfaces.

cond-mat.mtrl-sci↗

arXiv2025

Giant Uncompensated Magnon Spin Currents in X-type Magnets

Magnon spin currents in insulating magnets are useful for low-power spintronics. However, in magnets stacked by antiferromagnetic (AFM) exchange coupling, which have recently aroused significant interest for potential applications in spintronics, these currents are largely counteracted by opposite magnetic sublattices, thus suppressing their net effect. Contrary to this common observation, here, we show that magnets with X-type AFM stacking, where opposite magnetic sublattices form orthogonal intersecting chains, support giant magnon spin currents with minimal compensation. Our model Hamiltonian calculations predict magnetic chain locking of magnon spin currents in these X-type magnets, significantly reducing their compensation ratio. In addition, the one-dimensional nature of the chain-like magnetic sublattices enhances magnon spin conductivities surpassing those of two-dimensional ferromagnets and canonical altermagnets. Notably, uncompensated X-type magnets, such as odd-layer antiferromagnets and ferrimagnets, can exhibit magnon spin currents polarized opposite to those expected by their net magnetization. These unprecedented properties of X-type magnets, combined with their inherent advantages resulting from AFM coupling, offer a promising new path for low-power high-performance spintronics.

cond-mat.mtrl-sci↗