arXiv subjects

Wen-Yu Shan

Publications and source records attributed to Wen-Yu Shan.

At least 19 recordsLinked to original sources

arXiv2023

Nonreciprocal phonon dichroism induced by Fermi pocket anisotropy in two-dimensional Dirac materials

Electrons in two-dimensional (2D) Dirac materials carry local band geometric quantities, such as the Berry curvature and orbital magnetic moments, which, combined with electron-phonon coupling, may affect the phonon dynamics in an unusual way. Here, we propose intrinsic nonreciprocal linear and circular phonon dichroism in magnetic 2D Dirac materials, which originate from nonlocal band geometric quantities of electrons and reduce to pure Fermi-surface properties for acoustic phonons. We find that to acquire the nonreciprocity, the Fermi pocket anisotropy rather than the chirality of electrons is crucial. Two possible mechanisms of Fermi pocket anisotropy are suggested: (i) trigonal warping and out-of-plane magnetization or (ii) Rashba spin-orbit interaction and in-plane magnetization. As a concrete example, we predict appreciable and tunable nonreciprocal phonon dichroism in 2H-MoTe 2 on a EuO substrate. Our finding points to a different route towards electrical control of phonon nonreciprocity for acoustoelectronics applications based on 2D quantum materials.

cond-mat.mes-hall↗

arXiv2023

Magneto-optical Kerr and Faraday effects in bilayer antiferromagnetic insulators

Control and detection of antiferromagnetic topological materials are challenging since the total magnetization vanishes. Here we investigate the magneto-optical Kerr and Faraday effects in bilayer antiferromagnetic insulator MnBi$_2$Te$_4$. We find that by breaking the combined mirror symmetries with either perpendicular electric field or external magnetic moment, Kerr and Faraday effects occur. Under perpendicular electric field, antiferromagnetic topological insulators (AFMTI) show sharp peaks at the interband transition threshold, whereas trivial insulators show small adjacent positive and negative peaks. Gate voltage and Fermi energy can be tuned to reveal the differences between AFMTI and trivial insulators. We find that AFMTI with large antiferromagnetic order can be proposed as a pure magneto-optical rotator due to sizable Kerr (Faraday) angles and vanishing ellipticity. Under external magnetic moment, AFMTI and trivial insulators are significantly different in the magnitude of Kerr and Faraday angles and ellipticity. For the qualitative behaviors, AFMTI shows distinct features of Kerr and Faraday angles when the spin configurations of the system change. These phenomena provide new possibilities to optically detect and manipulate the layered topological antiferromagnets.

cond-mat.mes-hall↗

arXiv2023

Anomalous circular phonon dichroism in transition metal dichalcogenides

A magnetic field can generally induce circular phonon dichroism based on the formation of Landau levels of electrons. Here, we study the magnetization-induced circular phonon dichroism in transition metal dichalcogenides, without forming Landau levels. We find that, instead of the conventional deformation potential coupling, pseudogauge-type electron-phonon coupling plays an essential role in the emergence of the phenomenon. As a concrete example, a large dichroism signal is obtained in monolayer MoTe2 on a EuO substrate, even without considering Rashba spin-orbit coupling. Due to the two-dimensional spin-valley-coupled band structure, MoTe2 shows a reciprocal and nonreciprocal absorption of circularly polarized acoustic phonons upon reversing the direction of phonon propagation and magnetization, respectively. By varying the gate voltage, a tunable circular phonon dichroism can be realized, which paves a way toward different physics and applications of two-dimensional acoustoelectronics.

cond-mat.mes-hall↗

arXiv2020

Impact of novel electron-phonon coupling mechanisms on valley physics in two-dimensional materials

We systematically study the impact of various electron-acoustic-phonon coupling mechanisms on valley physics in two-dimensional materials. In the static strain limit, we find that Dirac cone tilt and deformation potential have analogous valley Hall response since they fall into the same universality class of pseudospin structure. However, such argument fails for the coupling mechanism with position-dependent Fermi velocity. For the isotropic case, a significant valley Hall effect occurs near charge neutrality similar to the bond-length change, whereas for the anisotropic case, the geometric valley transport is suppressed, akin to the deformation potential. Gap opening mechanism by nonuniform strain is found to totally inhibit the valley Hall transport, even if the dynamics of strains are introduced. By varying gate voltage, a tunable phonon-assisted valley Hall response can be realized, which paves a way toward rich phenomena and new functionalities of valley acoustoelectronics.

cond-mat.mes-hall↗

arXiv2019

Strain-Fluctuation-Induced Near-Quantization of Valley Hall Conductivity in Graphene Systems

We develop a theory of the valley Hall effect in high-quality graphene samples, in which strain fluctuation-induced random gauge potentials have been suggested as the dominant source of disorder. We find a near-quantized value of valley Hall conductivity in the band transport regime, which originates from an enhanced side jump of a Dirac electron when it scatters off the gauge potential. By assuming a small residue charge density our theory reproduces qualitatively the temperature- and gap-dependence of the observed valley Hall effect at the charge neutral point. Our study suggests that the valley Hall effect in graphene systems represents a new paradigm for the anomalous Hall physics where gauge disorder plays an important role.

cond-mat.mes-hall↗

arXiv2018

Optical Selection Rule of Excitons in Gapped Chiral Fermion Systems

We show that the exciton optical selection rule in gapped chiral fermion systems is governed by their winding number $w$, a topological quantity of the Bloch bands. Specifically, in a $C_N$-invariant chiral fermion system, the angular momentum of bright exciton states is given by $w \pm 1 + nN$ with $n$ being an integer. We demonstrate our theory by proposing two chiral fermion systems capable of hosting dark $s$-like excitons: gapped surface states of a topological crystalline insulator with $C_4$ rotational symmetry and biased $3R$-stacked MoS$_2$ bilayers. In the latter case, we show that gating can be used to tune the $s$-like excitons from bright to dark by changing the winding number. Our theory thus provides a pathway to electrical control of optical transitions in two-dimensional material.

cond-mat.mes-hall↗

arXiv2016

Multiple Hot-Carrier Collection in Photo-Excited Graphene Moire Superlattices

In conventional light harvesting devices, the absorption of a single photon only excites one electron, which sets the standard limit of power-conversion efficiency, such as the Shockley-Queisser limit. In principle, generating and harnessing multiple carriers per absorbed photon can improve the efficiency and possibly overcome this limit. Here, we report the observation of multiple hot carrier collection in graphene-boron-nitride Moire superlattice structures. A record-high zero-bias photoresponsivity of 0.3 ampere per watt, equivalently, an external quantum efficiency exceeding 50 percent, is achieved utilizing graphene photo-Nernst effect, which demonstrates a collection of at least 5 carriers per absorbed photon. We reveal that this effect arises from the enhanced Nernst coefficient through Lifshtiz transition at low energy Van Hove singularities, which is an emergent phenomenon due to the formation of Moire minibands. Our observation points to a new means for extremely efficient and flexible optoelectronics based on van der Waals heterostructures.

cond-mat.mes-hall↗

arXiv2015

RKKY interaction of magnetic impurities in Dirac and Weyl semimetals

We theoretically study the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction between magnetic impurities in both Dirac and Weyl semimetals (SMs). We find that the internode process, as well as the unique three-dimensional spin-momentum locking, has significant influences on the RKKY interaction, resulting in both a Heisenberg and an Ising term, and an additional Dzyaloshinsky-Moriya term if the inversion symmetry is absent. These interactions can lead to rich spin textures and possible ferromagnetism in Dirac and time-reversal symmetry-invariant Weyl SMs. The effect of anisotropic Dirac and Weyl nodes on the RKKY interaction is also discussed. Our results provide an alternative scheme to engineer topological SMs and shed new light on the application of Dirac and Weyl SMs in spintronics.

cond-mat.mes-hall↗

arXiv2015

Berry phase modification to the energy spectrum of excitons

By quantizing the semiclassical motion of excitons, we show that the Berry curvature can cause an energy splitting between exciton states with opposite angular momentum. This splitting is determined by the Berry curvature flux through the $\bm k$-space area spanned by the relative motion of the electron-hole pair in the exciton wave function. Using the gapped two-dimensional Dirac equation as a model, we show that this splitting can be understood as an effective spin-orbit coupling effect. In addition, there is also an energy shift caused by other "relativistic" terms. Our result reveals the limitation of the venerable hydrogenic model of excitons, and highlights the importance of the Berry curvature in the effective mass approximation.

cond-mat.mes-hall↗

arXiv2015

Spin responses and effective Hamiltonian for the two dimensional electron gas at oxide interface {LaAlO}$_3$/{SrTiO}$_3$

Strong Rashba spin-orbit coupling (SOC) of the two-dimensional electron gas (2DEG) at the oxide interface $\mathrm{LaAlO_{3}/SrTiO_{3}}$ underlies a variety of exotic physics, but its nature is still under debate. We derive an effective Hamiltonian for the 2DEG at the oxide interface $\mathrm{LaAlO_{3}/SrTiO_{3}}$ and find a different anisotropic Rashba SOC for the $d_{xz}$ and $d_{yz}$ orbitals. This anisotropic Rashba SOC leads to anisotropic static spin susceptibilities and also distinctive behavior of the spin Hall conductivity. These unique spin responses may be used to determine the nature of the Rashba SOC experimentally and shed light on the orbital origin of the 2DEG.

cond-mat.mes-hall↗

arXiv2015

Optical generation and detection of pure valley current in monolayer transition metal dichalcogenides

We propose a practical scheme to generate a pure valley current in monolayer transition metal dichalcogenides by one-photon absorption of linearly polarized light. We show that the pure valley current can be detected by either photoluminescence measurements or the ultrafast pump-probe technique. Our method, together with the previously demonstrated generation of valley polarization, opens up the exciting possibility of ultrafast optical-only manipulation of the valley index. The tilted field effect on the valley current in experiment is also discussed.

cond-mat.mes-hall↗

arXiv2014

Three-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides

We present a three-band tight-binding (TB) model for describing the low-energy physics in monolayers of group-VIB transition metal dichalcogenides $MX_2$ ($M$=Mo, W; $X$=S, Se, Te). As the conduction and valence band edges are predominantly contributed by the $d_{z^{2}}$, $d_{xy}$, and $d_{x^{2}-y^{2}}$ orbitals of $M$ atoms, the TB model is constructed using these three orbitals based on the symmetries of the monolayers. Parameters of the TB model are fitted from the first-principles energy bands for all $MX_2$ monolayers. The TB model involving only the nearest-neighbor $M$-$M$ hoppings is sufficient to capture the band-edge properties in the $\pm K$ valleys, including the energy dispersions as well as the Berry curvatures. The TB model involving up to the third-nearest-neighbor $M$-$M$ hoppings can well reproduce the energy bands in the entire Brillouin zone. Spin-orbit coupling in valence bands is well accounted for by including the on-site spin-orbit interactions of $M$ atoms. The conduction band also exhibits a small valley-dependent spin splitting which has an overall sign difference between Mo$X_{2}$ and W$X_{2}$. We discuss the origins of these corrections to the three-band model. The three-band TB model developed here is efficient to account for low-energy physics in $MX_2$ monolayers, and its simplicity can be particularly useful in the study of many-body physics and physics of edge states.

cond-mat.mtrl-sci↗

arXiv2013

Spin Hall effect in spin-valley coupled monolayer transition-metal dichalcogenides

We study both the intrinsic and extrinsic spin Hall effect in spin-valley coupled monolayers of transition metal dichalcogenides. We find that whereas the skew-scattering contribution is suppressed by the large band gap, the side-jump contribution is comparable to the intrinsic one with opposite sign in the presence of scalar and magnetic scattering. Intervalley scattering tends to suppress the side-jump contribution due to the loss of coherence. By tuning the ratio of intra- to intervalley scattering, the spin Hall conductivity shows a sign change in hole-doped samples. Multiband effect in other doping regime is considered, and it is found that the sign change exists in the heavily hole-doped regime, but not in the electron-doped regime.

cond-mat.mes-hall↗

arXiv2012

Topological insulator and the Dirac equation

We present a general description of topological insulators from the point of view of Dirac equations. The Z_{2} index for the Dirac equation is always zero, and thus the Dirac equation is topologically trivial. After the quadratic B term in momentum is introduced to correct the mass term m or the band gap of the Dirac equation, the Z_{2} index is modified as 1 for mB>0 and 0 for mB<0. For a fixed B there exists a topological quantum phase transition from a topologically trivial system to a non-trivial one system when the sign of mass m changes. A series of solutions near the boundary in the modified Dirac equation are obtained, which is characteristic of topological insulator. From the solutions of the bound states and the Z_{2} index we establish a relation between the Dirac equation and topological insulators.

cond-mat.mes-hall↗

arXiv2012

Spin-orbit scattering in quantum diffusion of massive Dirac fermions

Effect of spin-orbit scattering on quantum diffusive transport of two-dimensional massive Dirac fermions is studied by the diagrammatic technique. The quantum diffusion of massive Dirac fermions can be viewed as a singlet Cooperon in the massless limit and a triplet Cooperon in the large-mass limit. The spin-orbit scattering behaves like random magnetic fields only to the triplet Cooperon, and suppresses the weak localization of Dirac fermions in the large-mass regime. This behavior suggests an experiment to detect the weak localization of bulk subbands in topological insulator thin films, in which a narrowing of the cusp of the negative magnetoconductivity is expected after doping heavy-element impurities. Finally, a detailed comparison between the conventional two-dimensional electrons and Dirac fermions is presented for impurities of orthogonal, symplectic, and unitary symmetries.

cond-mat.mes-hall↗

arXiv2011

Surface and Edge States in Topological Semi-metals

We study the topologically non-trivial semi-metals by means of the 6-band Kane model. Existence of surface states is explicitly demonstrated by calculating the LDOS on the material surface. In the strain free condition, surface states are divided into two parts in the energy spectrum, one part is in the direct gap, the other part including the crossing point of surface state Dirac cone is submerged in the valence band. We also show how uni-axial strain induces an insulating band gap and raises the crossing point from the valence band into the band gap, making the system a true topological insulator. We predict existence of helical edge states and spin Hall effect in the thin film topological semi-metals, which could be tested with future experiment. Disorder is found to significantly enhance the spin Hall effect in the valence band of the thin films.

cond-mat.mes-hall↗

arXiv2010

Z2 invariant protected bound states in topological insulators

We present an exact solution of a modifed Dirac equation for topological insulator in the presence of a hole or vacancy to demonstrate that vacancies may induce bound states in the band gap of topological insulators. They arise due to the Z_2 classification of time-reversal invariant insulators, thus are also topologically-protected like the edge states in the quantum spin Hall effect and the surface states in three-dimensional topological insulators. Coexistence of the in-gap bound states and the edge or surface states in topological insulators suggests that imperfections may affect transport properties of topological insulators via additional bound states near the system boundary.

cond-mat.mes-hall↗

arXiv2010

Crossover of Three-Dimensional Topological Insulator of Bi2Se3 to the Two-Dimensional Limit

Bi2Se3 is theoretically predicted1 2and experimentally observed2,3 to be a three dimensional topological insulator. For possible applications, it is important to understand the electronic structure of the planar device. In this work, thickness dependent band structure of molecular beam epitaxy grown ultrathin films of Bi2Se3 is investigated by in situ angle-resolved photoemission spectroscopy. An energy gap is observed for the first time in the topologically protected metallic surface states of bulk Bi2Se3 below the thickness of six quintuple layers, due to the coupling between the surface states from two opposite surfaces of the Bi2Se3 film. The gapped surface states exhibit sizable Rashba-type spin-orbit splitting, due to breaking of structural inversion symmetry induced by SiC substrate. The spin-splitting can be controlled by tuning the potential difference between the two surfaces.

cond-mat.mtrl-sci↗