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Wen-hui Guo

Publications and source records attributed to Wen-hui Guo.

2 recordsLinked to original sources

Metal-bonded perovskite lead hydride with phonon-mediated superconductivity up to 46 K under atmospheric pressure

In the search for high-temperature superconductivity in hydrides, a plethora of multi-hydrogen superconductors have been theoretically predicted, and some have been synthesized experimentally under ultrahigh pressures of several hundred GPa. However, the impracticality of these high-pressure methods has been a persistent issue. In response, we propose a new approach to achieve high-temperature superconductivity under atmospheric pressure by implanting hydrogen into lead to create a stable few-hydrogen metal-bonded perovskite, Pb$_4$H. This approach diverges from the popular design methodology of multi-hydrogen covalent high critical temperature ($T_c$) superconductors under ultrahigh pressure. By solving the anisotropic Migdal-Eliashberg (ME) equations, we demonstrate that perovskite Pb$_4$H is a typical phonon-mediated superconductor with a $T_c$ of 46 K, which is six times higher than that of bulk Pb (7.22 K) and higher than that of MgB$_2$ (39 K). The high $T_c$ can be attributed to the strong electron-phonon coupling (EPC) strength of 2.45, which arises from hydrogen implantation in lead that induces several high-frequency optical phonon modes with a relatively large phonon linewidth resulting from H atom vibration. The metallic-bonding in perovskite Pb$_4$H not only improves the structural stability but also guarantees better ductility than the widely investigated multi-hydrogen, iron-based, and cuprate superconductors. These results suggest that there is potential for the exploration of new high-temperature superconductors under atmospheric pressure and may reignite interest in their experimental synthesis soon.

cond-mat.supr-con

Two-dimensional InSe/WS$_2$ heterostructure with enhanced optoelectronic performance in the visible region

Two-dimensional (2D) InSe and WS$_2$ exhibit promising characteristics for optoelectronic and photoelectrochemical applications, e.g. photodetection and photocatalytic water splitting. However, both of them have poor absorption of visible light due to wide band gaps. 2D InSe has high electron mobility but low hole mobility, while 2D WS$_2$ is on the opposite. Here, we design a 2D heterostructure composed of their monolayers and study its optoelectronic properties by first-principles calculations. Our results show that the heterostructure has a direct band gap of 2.19 eV, which is much smaller than those of the monolayers mainly due to a type-II band alignment: the valence band maximum and the conduction band minimum of monolayer InSe are lower than those of monolayer WS$_2$, respectively. The visible-light absorption is enhanced considerably, e.g. about fivefold (threefold) increase at the wavelength of 490 nm in comparison to monolayer InSe (WS$_2$). The type-II band alignment also facilitates the spatial separation of photogenerated electron-hole pairs, i.e., electrons (holes) reside preferably in the InSe (WS$_2$) layer. The two layers complement each other in carrier mobilities of the heterostructure: the photogenerated electrons and holes inherit the large mobilities from the InSe and WS$_2$ monolayers, respectively.

cond-mat.mtrl-sci