arXiv subjects

Weng W. Chow

Publications and source records attributed to Weng W. Chow.

17 recordsLinked to original sources

arXiv2025

Increasing single-photon production with cavity-QED

A study was performed to determine the extent cavity enhancement may increase single-photon production while maintaining single-photon purity. It was found that certain combinations of cavity lifetime and light-matter coupling strength can lead to carrier-photon correlations that increase single-photon generation rate while maintaining low 2nd order photon correlation. This study provides guidance for future emitter-cavity design to achieve high purity and ultrafast single photon generation.

quant-ph↗

arXiv2025

Bi-stability and period-doubling cascade of frequency combs in exceptional-point lasers

Recent studies have demonstrated that a laser can self-generate frequency combs when tuned near an exceptional point (EP), where two cavity modes coalesce. These EP combs induce periodic modulation of the population inversion in the gain medium, and their repetition rate is independent of the laser cavity's free spectral range. In this work, we perform a stability analysis that reveals two notable properties of EP combs, bi-stability and a period-doubling cascade. The period-doubling cascade enables halving of the repetition rate while maintaining the comb's total bandwidth, presenting opportunities for the design of highly compact frequency comb generators.

physics.optics↗

arXiv2024

Turnkey locking of quantum-dot lasers directly grown on Si

Ultra-low-noise laser sources are crucial for a variety of applications, including microwave synthesizers, optical gyroscopes, and the manipulation of quantum systems. Silicon photonics has emerged as a promising solution for high-coherence applications due to its ability to reduce system size, weight, power consumption, and cost (SWaP-C). Semiconductor lasers based on self-injection locking (SIL) have reached fiber laser coherence, but typically require a high-Q external cavity to suppress coherence collapse through frequency-selective feedback. Lasers based on external-cavity locking (ECL) are a low-cost and turnkey operation option, but their coherence is generally inferior to SIL lasers. In this work, we demonstrate quantum-dot (QD) lasers grown directly on Si that achieve SIL laser coherence under turnkey ECL. The high-performance QD laser offers a scalable and low-cost heteroepitaxial integration platform. Moreover, the QD laser's chaos-free nature enables a 16 Hz Lorentzian linewidth under ECL using a low-Q external cavity, and improves the frequency noise by an additional order of magnitude compared to conventional quantum-well lasers.

physics.optics↗

arXiv2023

Self-induced ultrafast electron-hole plasma temperature oscillations in nanowire lasers

Nanowire lasers can be monolithically and site-selectively integrated onto silicon photonic circuits. To assess their full potential for ultrafast opto-electronic devices, a detailed understanding of their lasing dynamics is crucial. However, the roles played by their resonator geometry and the microscopic processes that mediate energy exchange between the photonic, electronic, and phononic subsystems are largely unexplored. Here, we study the dynamics of GaAs-AlGaAs core-shell nanowire lasers at cryogenic temperatures using a combined experimental and theoretical approach. Our results indicate that these NW lasers exhibit sustained intensity oscillations with frequencies ranging from 160 GHz to 260 GHz. As the underlying physical mechanism, we identified self-induced electron-hole plasma temperature oscillations resulting from a dynamic competition between photoinduced carrier heating and cooling via phonon scattering. These dynamics are intimately linked to the strong interaction between the lasing mode and the gain material, which arises from the wavelength-scale dimensions of these lasers. We anticipate that our results could lead to new approaches for ultrafast intensity and phase modulation of chip-integrated nanoscale semiconductor lasers.

cond-mat.mes-hall↗

arXiv2021

Analysis of the spontaneous emission limited linewidth of an integrated III-V/SiN laser

This paper describes a calculation of the spontaneous emission limited linewidth of a semiconductor laser consisting of hybrid or heterogeneously integrated, silicon and III-V intracavity components. Central to the approach are a) description of the multi-element laser cavity in terms of composite laser/free-space eigenmodes, b) use of multimode laser theory to treat mode competition and multiwave mixing, and c) incorporation of quantum-optical contributions to account for spontaneous emission effects. Application of the model is illustrated for the case of linewidth narrowing in an InAs quantum-dot laser coupled to a high-Q SiN cavity.

physics.optics↗

arXiv2021

Enhanced optical nonlinearities in epitaxial quantum dots lasers on silicon for future photonic integrated systems

Four-wave mixing (FWM) is an important nonlinear optical phenomenon that underlines many of the discoveries and device applications since the laser was invented. Examples include parametric amplification, mode-locked pulses and frequency combs, and in the quantum optics regime, entangled-photon generation, squeezed-state production and optical transduction from the visible to infrared wavelengths. For quantum dot systems, the basic understanding of FWM is limited by the conventional investigation method, which concentrates on the FWM susceptibility measured with optical amplifiers. This paper addresses this weakness by performing laser experiments to account for all optical nonlinearities contributing to the FWM signal. Meanwhile, we gain valuable insight into the intricate interplay among optical nonlinearities. Using quantum dot lasers directly grown on silicon, we achieved FWM conversion efficiency sufficient to demonstrate self-mode-locking in a single-section laser diode, with sub-ps mode-locked pulse duration and kHz frequency-comb linewidth. A comparison with first-principles based multimode laser theory indicates measured FWM conversion efficiencies that are close to the theoretical limit. An advantage over earlier studies and crucial to confidence in the results are the quality and reproducibility of state-of-the-art quantum dot lasers. They make possible the detailed study of conversion efficiency over a broad parameter space, and the identification of the importance of p-doping. Systematic improvement based on our understanding of underlying physics will lead to transform limited performance and effective compensation of intrinsic and extrinsic effects, such as linewidth enhancement and background dispersion. The integration of FWM with lasing impacts numerous optoelectronic components used in telecom and datacom.

physics.optics↗

arXiv2015

Solid state based analog of optomechanics

We investigate a semiconductor quantum dot as a microscopic analog of a basic optomechanical setup. We show, that optomechanical features can be reproduced by the solid-state platform, arising from parallels of the underlying interaction processes, which in the optomechanical case is the radiation pressure coupling and in the semiconductor case the electron-phonon coupling. In optomechanics, phonons are typically induced via confined photons, acting on a movable mirror, while in the semiconductor system the phonons are emitted by the laser-driven electronic system. There are analogous effects present for both systems, featuring bistabilities, optically induced phonon lasing and enhanced phonon loss. Nonetheless, the different statistical nature of the optical cavity and the electronic system also leads to qualitative differences.

quant-ph↗

arXiv2015

Numerical model for atomtronic circuit analysis

A model for studying atomtronic devices and circuits based on finite temperature Bose-condensed gases is presented. The approach involves numerically solving equations of motion for atomic populations and coherences, derived using the Bose-Hubbard Hamiltonian and the Heisenberg picture. The resulting cluster expansion is truncated at a level giving balance between physics rigor and numerical demand mitigation. This approach allows parametric studies involving time scales that cover both the rapid population dynamics relevant to non-equilibrium state evolution, as well as the much longer time durations typical for reaching steady-state device operation. The model is demonstrated by studying the evolution of a Bose-condensed gas in the presence of atom injection and extraction in a double-well potential. In this configuration phase-locking between condensates in each well of the potential is readily observed, and its influence on the evolution of the system is studied.

physics.atom-ph↗

arXiv2014

Microscopic model for intersubband gain from electrically pumped quantum-dot structures

We study theoretically the performance of electrically pumped self-organized quantum dots as a gain material in the mid-IR range at room temperature. We analyze an AlGaAs/InGaAs based structure composed of dots-in-a-well sandwiched between two quantum wells. We numerically analyze a comprehensive model by combining a many-particle approach for electronic dynamics with a realistic modeling of the electronic states in the whole structure. We investigate the gain both for quasi-equilibrium conditions and current injection. Comparing different structures we find that steady-state gain can only be realized by an efficient extraction process, which prevents an accumulation of electrons in continuum states, that make the available scattering pathways through the quantum dot active region too fast to sustain inversion. The tradeoff between different extraction/injection pathways is discussed. Comparing the modal gain to a standard quantum-well structure as used in quantum cascade lasers, our calculations predict reduced threshold current densities of the quantum dot structure for comparable modal gain. Such a comparable modal gain can, however, only be achieved for an inhomogeneous broadening of a quantum-dot ensemble that is close to the lower limit achievable today using self-organized growth.

cond-mat.mtrl-sci↗

arXiv2014

Group-velocity slowdown in a double quantum-dot molecule

The slowdown of optical pulses due to quantum-coherence effects is investigated theoretically for an "active material" consisting of InGaAs-based double quantum-dot molecules. These are designed to exhibit a long lived coherence between two electronic levels, which is an essential part of a quantum coherence scheme that makes use of electromagnetically-induced transparency effects to achieve group velocity slowdown. We apply a many-particle approach based on realistic semiconductor parameters that allows us to calculate the quantum-dot material dynamics including microscopic carrier scattering and polarisation dephasing dynamics. The group-velocity reduction is characterized in the frequency domain by a quasi-equilibrium slow-down factor and in the time domain by the probe-pulse slowdown obtained from a calculation of the spatio-temporal material dynamics coupled to the propagating optical field. The group-velocity slowdown in the quantum-dot molecule is shown to be substantially higher than what is achievable from similar transitions in typical InGaAs-based single quantum dots. The dependences of slowdown and shape of the propagating probe pulses on lattice temperature and drive intensities are investigated.

cond-mat.mes-hall↗

arXiv2014

Group-velocity slowdown in quantum-dots and quantum-dot molecules

We investigate theoretically the slowdown of optical pulses due to quantum-coherence effects in InGaAs-based quantum dots and quantum dot molecules. Simple models for the electronic structure of quantum dots and, in particular, quantum-dot molecules are described and calibrated using numerical simulations. It is shown how these models can be used to design optimized quantum-dot molecules for quantum coherence applications. The wave functions and energies obtained from the optimizations are used as input for a microscopic calculation of the quantum-dot material dynamics including carrier scattering and polarization dephasing. The achievable group velocity slowdown in quantum-coherence V schemes consisting of quantum-dot molecule states is shown to be substantially higher than what is achievable from similar transitions in typical InGaAs-based single quantum dots.

cond-mat.mes-hall↗

arXiv2013

Modeling of temperature and excitation dependences of efficiency in an InGaN light-emitting diode

The changes in excitation dependence of efficiency with temperature is modeled for a wurtzite InGaN light-emitting diode. The model incorporates bandstructure changes with carrier density arising from screening of quantum-confined Stark effect. Bandstructure is computed by solving Poisson and k.p equations in the envelop approximation. The information is used in a dynamical model for populations in momentum-resolved electron and hole states. Application of the approach shows the interplay of quantum-well and barrier emissions giving rise to shape changes in efficiency versus current density with changing temperature, as observed in some experiments.

physics.optics↗

arXiv2012

Failure of the α-factor in describing QD laser dynamical instabilities and chaos

We show that the long-established concept of a linewidth-enhancement factor αto describe carrier-induced refractive index changes in semiconductor lasers breaks down in quantum dot (QD) lasers when describing complex dynamic scenarios, found for example under high-excitation or optical injection. By comparing laser simulations using a constant α-factor with results from a more complex non-equilibrium model that separately treats gain and refractive index dynamics, we examine the conditions under which an approximation of the amplitude-phase coupling by an α-factor becomes invalid. The investigations show that while a quasi-equilibrium approach for conventional quantum well lasers is valid over a reasonable parameter range, allowing one to introduce an α-factor as a constant parameter, the concept is in general not applicable to predict QD laser dynamics due to the different timescales of the involved scattering processes.

cond-mat.mtrl-sci↗

arXiv2011

Influences of excitation-dependent bandstructure changes on InGaN light-emitting diode efficiency

Bandstructure properties in wurtzite quantum wells can change appreciably with changing carrier density because of screening of quantum-confined Stark effect. An approach for incorporating these changes in an InGaN light-emitting-diode model is described. Bandstructure is computed for different carrier densities by solving Poisson and k\cdotp equations in the envelop approximation. The information is used as input in a dynamical model for populations in momentum-resolved electron and hole states. Application of the approach is illustrated by modeling device internal quantum efficiency as a function of excitation.

physics.optics↗

arXiv2006

Exceeding the Manley-Rowe quantum efficiency limit in an optically pumped THz amplifier

Using a microscopic theory based on the Maxwell-semiconductor Bloch equations, we investigate the possibility of an optically-assisted electrically-driven THz quantum cascade laser. Whereas in optical conversion schemes the power conversion efficiency is limited by the Manley-Rowe relation, the proposed optically-assisted scheme can achieve higher efficiency by coherently recovering the optical pump energy. Furthermore, due to quantum coherence effects the detrimental effects of scattering are mitigated.

physics.optics↗

arXiv2005

Theory of emission from an active photonic lattice

The emission from a radiating source embedded in a photonic lattice is calculated. The analysis considers the photonic lattice and free space as a combined system. Furthermore, the radiating source and electromagnetic field are quantized. Results show the deviation of the photonic lattice spectrum from the blackbody distribution, with intracavity emission suppressed at certain frequencies and enhanced at others. In the presence of rapid population relaxation, where the photonic lattice and blackbody populations are described by the same equilibrium distribution, it is found that the enhancement does not result in output intensity exceeding that of the blackbody at the same frequency. However, for slow population relaxation, the photonic lattice population has a greater tendency to deviate from thermal equilibrium, resulting in output intensities exceeding those of the blackbody, even for identically pumped structures.

physics.optics↗

arXiv2004

Bistable analytic-phase synchronization in strongly-competing chaotic lasing modes

We theoretically study analytic-phase synchronization in strongly-competing oscillator systems. Using the example of composite-cavity modes coupled via a class-B laser active medium, we discover that inherent chaotic phase synchronization can arise concurrently at two different chaotic attractors, leading to bistable phase-synchronized solutions. In our example, the underlying mechanism for bistability and inherent phase synchronization is population pulsation within the active medium.

nlin.CD↗