arXiv subjects

Wenhan Zhang

Publications and source records attributed to Wenhan Zhang.

26 records · Page 2Linked to original sources

arXiv2018

Super Characters: A Conversion from Sentiment Classification to Image Classification

We propose a method named Super Characters for sentiment classification. This method converts the sentiment classification problem into image classification problem by projecting texts into images and then applying CNN models for classification. Text features are extracted automatically from the generated Super Characters images, hence there is no need of any explicit step of embedding the words or characters into numerical vector representations. Experimental results on large social media corpus show that the Super Characters method consistently outperforms other methods for sentiment classification and topic classification tasks on ten large social media datasets of millions of contents in four different languages, including Chinese, Japanese, Korean and English.

cs.CL↗

arXiv2018

Electronic Fingerprints of Cr and V Dopants in Topological Insulator Sb2Te3

By combining scanning tunneling microscopy/spectroscopy and first-principles calculations, we systematically study the local electronic states of magnetic dopants V and Cr in the topological insulator (TI) Sb2Te3. Spectroscopic imaging shows diverse local defect states between Cr and V, which agree with our first-principle calculations. The unique spectroscopic features of V and Cr dopants provide electronic fingerprints for the co-doped magnetic TI samples with the enhanced quantum anomalous Hall effect. Our results also facilitate the exploration of the underlying mechanism of the enhanced quantum anomalous Hall temperature in Cr/V co-doped TIs.

cond-mat.str-el↗

arXiv2018

Observation of a Topological Insulator Dirac Cone Reshaped by Non-magnetic Impurity Resonance

The massless Dirac electrons found at topological insulator surfaces are thought to be influenced very little by weak, non-magnetic disorder. However, a resonance effect of strongly perturbing non-magnetic impurities has been theoretically predicted to change the dispersion and physical nature of low-energy quasiparticles, resulting in unique particle-like states that lack microscopic translational symmetry. Here we report the direct observation of impurities reshaping the surface Dirac cone of the model 3D topological insulator Bi2Se3. For the first time, a pronounced kink-like dispersion feature is observed in disorder-enriched samples, and found to be closely associated with the anomaly caused by impurity resonance in the surface state density of states, as observed by dichroic angle resolved photoemission spectroscopy (ARPES). The experimental observation of these features, which closely resemble theoretical predictions, has significant implications for the properties of topological Dirac cones in applied scenarios that commonly feature point defect disorder at surfaces or interfaces.

cond-mat.mtrl-sci↗

arXiv2018

Ultra Power-Efficient CNN Domain Specific Accelerator with 9.3TOPS/Watt for Mobile and Embedded Applications

Computer vision performances have been significantly improved in recent years by Convolutional Neural Networks(CNN). Currently, applications using CNN algorithms are deployed mainly on general purpose hardwares, such as CPUs, GPUs or FPGAs. However, power consumption, speed, accuracy, memory footprint, and die size should all be taken into consideration for mobile and embedded applications. Domain Specific Architecture (DSA) for CNN is the efficient and practical solution for CNN deployment and implementation. We designed and produced a 28nm Two-Dimensional CNN-DSA accelerator with an ultra power-efficient performance of 9.3TOPS/Watt and with all processing done in the internal memory instead of outside DRAM. It classifies 224x224 RGB image inputs at more than 140fps with peak power consumption at less than 300mW and an accuracy comparable to the VGG benchmark. The CNN-DSA accelerator is reconfigurable to support CNN model coefficients of various layer sizes and layer types, including convolution, depth-wise convolution, short-cut connections, max pooling, and ReLU. Furthermore, in order to better support real-world deployment for various application scenarios, especially with low-end mobile and embedded platforms and MCUs (Microcontroller Units), we also designed algorithms to fully utilize the CNN-DSA accelerator efficiently by reducing the dependency on external accelerator computation resources, including implementation of Fully-Connected (FC) layers within the accelerator and compression of extracted features from the CNN-DSA accelerator. Live demos with our CNN-DSA accelerator on mobile and embedded systems show its capabilities to be widely and practically applied in the real world.

cs.CV↗

arXiv2018

Topological phase transition with nanoscale inhomogeneity in (Bi$_{1-x}$In$_{x}$)$_{2}$Se$_{3}$

Topological insulators are a class of band insulators with non-trivial topology, a result of band inversion due to the strong spin-orbit coupling. The transition between topological and normal insulator can be realized by tuning the spin-orbit coupling strength, and has been observed experimentally. However, the impact of chemical disorders on the topological phase transition was not addressed in previous studies. Herein, we report a systematic scanning tunneling microscopy/spectroscopy and first-principles study of the topological phase transition in single crystals of In doped Bi$_2$Se$_3$. Surprisingly, no band gap closure was observed across the transition. Furthermore, our spectroscopic-imaging results reveal that In defects are extremely effective "suppressors" of the band inversion, which leads to microscopic phase separation of topological-insulator-like and normal-insulator-like nano regions across the "transition". The observed topological electronic inhomogeneity demonstrates the significant impact of chemical disorders in topological materials, shedding new light on the fundamental understanding of topological phase transition.

cond-mat.str-el↗

arXiv2018

Solution to the hole-doping problem and tunable quantum Hall effect in Bi$_{2}$Se$_{3}$ thin films

Bi$_{2}$Se$_{3}$, one of the most widely studied topological insulators (TIs), is naturally electron-doped due to n-type native defects. However, many years of efforts to achieve p-type Bi$_{2}$Se$_{3}$ thin films have failed so far. Here, we provide a solution to this long-standing problem, showing that the main culprit has been the high density of interfacial defects. By suppressing these defects through an interfacial engineering scheme, we have successfully implemented p-type Bi$_{2}$Se$_{3}$ thin films down to the thinnest topological regime. On this platform, we present the first tunable quantum Hall effect (QHE) study in Bi$_{2}$Se$_{3}$ thin films, and reveal not only significantly asymmetric QHE signatures across the Dirac point but also the presence of competing anomalous states near the zeroth Landau level. The availability of doping tunable Bi$_{2}$Se$_{3}$ thin films will now make it possible to implement various topological quantum devices, previously inaccessible.

cond-mat.mtrl-sci↗

arXiv2017

Quasiparticle Interference of Surface States in Type-II Weyl Semimetal WTe$_2$

Topological Weyl semimetal (TWS) is a metal, where low energy excitations behave like Weyl fermions of high-energy physics. It was recently shown that due to the lower symmetry of condensed matter systems, they can realize two distinct types of Weyl fermions. The type-I Weyl fermion in a metal is formed by a linear crossing of two bands at a point in the crystalline momentum space - Brillouin zone (BZ). The second type TWSs host type-II Weyl points appearing at the touching points of electron and hole pockets, which is a result of tilted linear dispersion. The type-II TWS was predicted to exist in several compounds, including WTe$_2$. Several ARPES studies of WTe$_2$ were reported so far, having contradictory conclusions on the topological nature of observed Fermi arcs. In this work, we report the results of spectroscopic imaging with a scanning tunneling microscope and first principle calculations, establishing a clear quasiparticle interference features of the surface states of WTe$_2$. Our work provides a strong evidence for surface state scattering. Although the surface Fermi arcs are clearly observed, it is still difficult to prove the existence of predicted Type-II Weyl points in the bulk.

cond-mat.str-el↗

arXiv2016

Disorder-driven topological phase transition in Bi2Se3 films

Topological insulators (TI) are a phase of matter that host unusual metallic states on their surfaces. Unlike the states that exist on the surface of conventional materials, these so-called topological surfaces states (TSS) are protected against disorder-related localization effects by time reversal symmetry through strong spin-orbit coupling. By combining transport measurements, angle-resolved photo-emission spectroscopy and scanning tunneling microscopy, we show that there exists a critical level of disorder beyond which the TI Bi2Se3 loses its ability to protect the metallic TSS and transitions to a fully insulating state. The absence of the metallic surface channels dictates that there is a change in topological character, implying that disorder can lead to a topological phase transition even without breaking the time reversal symmetry. This observation challenges the conventional notion of topologically-protected surface states, and will provoke new studies as to the fundamental nature of topological phase of matter in the presence of disorder.

cond-mat.mtrl-sci↗