arXiv subjects

Wenhu Liao

Publications and source records attributed to Wenhu Liao.

7 recordsLinked to original sources

arXiv2026

Interlayer sliding direction as a symmetry selector in altermagnetic bilayer Fe2WS4: Switchable anomalous Hall and anomalous valley Hall effects

Altermagnets combine compensated collinear magnetic order with momentum-dependent spin splitting, offering a promising platform for coupling spin and valley degrees of freedom with ferroelectricity and Berry-curvature driven transport in the absence of net magnetization. However, achieving nonvolatile and selective control of these intertwined degrees of freedom remains a key challenge. Here, using first-principles calculations, we show that the direction of interlayer sliding serves as a symmetry selective control parameter in altermagnetic bilayer Fe2WS4. Diagonal sliding breaks inversion symmetry and produces two sliding ferroelectric states with opposite out-of-plane polarizations. Reversal of the ferroelectric polarization switches the momentum-dependent spin texture and reverses the anomalous Hall conductivity, revealing strong magnetoelectric coupling and enabling a ferroelectrically switchable anomalous Hall effect. In contrast, axial sliding preserves inversion symmetry but breaks the crystalline symmetry relating the X and Y valleys, leading to reversible valley polarization and a switchable anomalous valley Hall effect. These results establish the direction of interlayer sliding as a nonvolatile symmetry selector for controlling ferroelectricity, spin texture, valley polarization, and Hall transport responses in two-dimensional altermagnetic bilayers.

cond-mat.mtrl-sci↗

arXiv2026

All-electrical switching of spin texture in a strain-tunable 2D Janus ferroelectric altermagnet

Altermagnetism (AM), a collinear magnetic phase with momentum-dependent spin splitting, is a promising candidate for strong magnetoelectric coupling. However, realizing direct and tunable coupling between ferroelectricity (FE) and AM within a single two-dimensional (2D) material remains an outstanding challenge. Here, based on first-principles calculations, we identify the distorted phase of monolayer Janus VOClBr as an intrinsic 2D FE-AM. This phase demonstrates robust magnetoelectric coupling, as evidenced by a complete reversal of momentum-space spin polarization upon FE switching, and further supported by spin texture analysis and the magneto-optical Kerr effect. Notably, the FE properties are highly strain-tunable: biaxial compression strain of -4% reduces the FE polarization switching barrier by approximately 87%, whereas a tensile strain of +3% induces a phase transition to an antiferromagnet. Leveraging the lock-in between the electrically controlled spin texture and the magneto-optical Kerr effect signal, we propose a non-volatile, polymorphic spintronic memory device featuring all-electrical writing and optical readout. This work establishes 2D FE-AMs as a versatile platform for coupled ferroic orders and paves the way for voltage-controlled, multifunctional spin-logic devices.

cond-mat.mtrl-sci↗

arXiv2026

Dual-Switch Control of a Layer-Locked Anomalous Valley Hall Effect in a Sliding Ferroelectric Antiferromagnet

The integration of ferroelectric (FE) and antiferromagnetic (AFM) orders in twodimensional (2D) materials provides a promising avenue for the nonvolatile control of coupled spin and valley degrees of freedom, a capability central to advancing spinvalleytronics. However, realizing a single material system where these quantum states can be independently and reversibly manipulated by distinct stimuli, a prerequisite for multifunctional devices, has remained elusive. Here, we demonstrate a dual-switch mechanism in bilayer VS2, a room-temperature FE-AFM system, that enables electrical and magnetic control of a layer-locked anomalous valley Hall effect (AVHE). First-principles calculations reveal that interlayer sliding breaks spatial inversion symmetry, inducing a switchable out-of-plane FE polarization that coexists with interlayer AFM. The spin-orbit coupled valley polarization can be reversibly switched either by FE polarization reversal or by a magnetic-field-induced spin-flip transition, confirming the existence of electrically and magnetically addressable valley states. The Berry curvature exhibits both valley-contrasting and layer-locked characteristics, which underpin a switchable Hall response. Notably, electric and magnetic switching are functionally equivalent in modulating valley, layer, and spin indices, revealing strong magnetoelectric coupling. This work establishes a multidegree-of-freedom operational paradigm in 2D multiferroics and opens a viable design pathway toward multi-state memory and spin-valleytronic logic devices.

cond-mat.mes-hall↗

arXiv2026

Strain-tunable multipiezo effects in Janus monolayer Cr2SSe: Selective reversal of valley polarization and single-spin-channel anomalous valley Hall effect

Altermagnetism, the third class of collinear magnetic order, uniquely combines a zero net magnetization with spin polarized bands in reciprocal space, opening new avenues for two dimensional valleytronics and spintronics. Here, using first principles calculations, we predict that the Janus monolayer Cr2SSe, which possesses intrinsic inversion symmetry breaking, hosts a strain tunable multipiezo effect and exhibits distinctive valleytronic properties. The system displays pronounced spin splitting and band inversion at the X and Y high symmetry points in the Brillouin zone, giving rise to robust spin-valley locking. The degeneracy of these valleys is protected by diagonal mirror symmetry. Application of uniaxial strain breaks this symmetry, concurrently inducing piezovalley, piezoelectric, and piezomagnetic responses, a manifestation of the multipiezo effect. Critically, strain applied along orthogonal crystallographic directions yields opposite valley polarization, while under small compressive strain, we achieve selective reversal of valley polarization, enabling independent control of valence and conduction band valleys and promoting a single-spin-channel anomalous valley Hall effect. These findings establish a pathway for low-power, non volatile manipulation of valley degrees of freedom and enhanced spin transport efficiency, providing a theoretical foundation for the design of energy-efficient valleytronic devices.

cond-mat.mtrl-sci↗

arXiv2019

Even-odd dependent optical transitions of zigzag monolayer black phosphorus nanoribbons

We analytically study the electronic structures and optical properties of zigzag-edged black phosphorene nanoribbons (ZPNRs) utilizing the tight-binding (TB) Hamiltonian and Kubo formula. By solving the discrete Schordinger equation directly, we obtain the energy spectra and wavefunctions for a $N$-ZPNR with $N$ number of transverse zigzag atomic chains, and classify the eigenstates according to the lattice symmetry. We then obtain the optical transition selection rule of ZPNRs based on the symmetry analysis and the analytical expressions of the optical transition matrix elements. Under an incident light linearly-polarized along the ribbon, importantly, we find that the optical transition selection rule for the $N$-ZPNR with even- or odd-$N$ is qualitatively different. In specification, for even-$N$ ZPNRs the inter- (intra-) band selection rule is $Δn=$odd (even), since the parity of the wavefunction corresponding to the $n$th subband in the conduction (valence) band is $(-1)^{n}[(-1)^{(n+1)}]$ due to the presence of the $C_{2x}$ symmetry. In contrast, all optical transitions are possible among all subbands due to the absence of the $C_{2x}$ symmetry. Our findings provide a further understanding on the electronic states and optical properties of ZPNRs, which are useful in the explanation of the optical experiment data on ZPNR samples.

cond-mat.mes-hall↗

arXiv2008

Dependence of electronic and optical properties on a high-frequency field for carbon nanotubes

We study theoretically the electronic structure, transport and optical properties for a zigzag single-wall carbon nanotube connected to two normal conductor leads under the irradiation of an external electromagnetic field at low temperatures, with particular emphasis on the features of high-frequency response. Using the standard nonequilibrium Green's function techniques, we examine the time-averaged density of states, the conductivity, the dielectric function and the electron energy loss spectra for the system with photon polarization parallel with the tunneling current direction, respectively. Through some numerical examples, it is shown that the density of states is strongly dependent on the incident electron energy, the strength and frequency of the applied field. For higher electron energies in comparison with lead-nanotube coupling energy, the system conductance decreases with increasing the field strength and increases with increasing the field frequency respectively, and shows some oscillation structures. Moreover, the optical functions for the system have also a rich structure with the variation of field frequency. It may demonstrate that this transport dependence on the external field parameters can be used to give the energy spectra information of carbon nanotubes and to detect the high-frequency microwave irradiation.

cond-mat.mes-hall↗

arXiv2006

Electronic structure and transport for a laser-field-irradiated quantum wire with Rashba spin-orbit coupling

We investigate theoretically the electronic structure and transport for a two-level quantum wire with Rashba spin-orbit coupling (SOC) under the irradiation of an external laser field at low temperatures. The photon-induced transitions between SOC-splitted subbands with the same lateral confinement quantum numbers and between subbands with different confinement quantum number are expected. Using the method of equation of motion (EOM) for Keldysh nonequilibrium Green's functions (NGF), we examine the time-averaged density of states (DOS) and the spin polarized conductance for the system with photon polarization perpendicular to the wire direction. Through the analytical analysis and some numerical examples, the interplay effects of the external laser field and the Rashba SOC on both the DOS and the conductance of the system are demonstrated and discussed. It is found that the external laser field can adjust the spin polarization rate and the transport of the quantum wire system with some proper Rashba SOC strengths.

cond-mat.mes-hall↗