arXiv subjects

Wenhui Duan

Publications and source records attributed to Wenhui Duan.

At least 145 records · Page 8Linked to original sources

arXiv2017

Experimental evidence of type-II Dirac fermions in PtSe2

Topological semimetals have attracted extensive research interests for realizing condensed matter physics counterparts of three-dimensional Dirac and Weyl fermions, which were originally introduced in high energy physics. Recently it has been proposed that type-II Dirac semimetal can host a new type of Dirac fermions which break Lorentz invariance and therefore does not have counterpart in high energy physics. Here we report the electronic structure of high quality PtSe$_2$ crystals to provide direct evidence for the existence of three-dimensional type-II Dirac fermions. A comparison of the crystal, vibrational and electronic structure to a sister compound PtTe$_2$ is also discussed. Our work provides an important platform for exploring the novel quantum phenomena in the PtSe$_2$ class of type-II Dirac semimetals.

cond-mat.mtrl-sci↗

arXiv2017

Deterministic Role of Concentration Surplus of Cation Vacancy over Anion Vacancy in Bipolar Memristive NiO

Migration of oxygen vacancies has been proposed to play an important role in the bipolar memristive behaviors since oxygen vacancies can directly determine the local conductivity in many systems. However, a recent theoretical work demonstrated that both migration of oxygen vacancies and coexistence of cation and anion vacancies are crucial to the occurrence of bipolar memristive switching, normally observed in the small-sized NiO. So far, experimental work addressing this issue is still lacking. In this work, with conductive atomic force microscope and combined scanning transmission electron microscopy & electron energy loss spectroscopy, we reveal that concentration surplus of Ni vacancy over O vacancy determines the bipolar memristive switching of NiO films. Our work supports the dual-defects-based model, which is of fundamental importance for understanding the memristor mechanisms beyond the well-established oxygen-vacancy-based model. Moreover, this work provides a methodology to investigate the effect of dual defects on memristive behaviors.

cond-mat.mtrl-sci↗

arXiv2016

Type-II Dirac fermions in the PtSe$_2$ class of transition metal dichalcogenides

Recently, a new "type-II" Weyl fermion, which exhibits exotic phenomena such as angle-dependent chiral anomaly, was discovered in a new phase of matter where electron and hole pockets contact at isolated Weyl points. [Nature \textbf{527}, 495 (2015)] This raises an interesting question whether its counterpart, i.e., type-II \textit{Dirac} fermion, exists in real materials. Here, we predict the existence of symmetry-protected type-II Dirac fermions in a class of transition metal dichalcogenide materials. Our first-principles calculations on PtSe$_2$ reveal its bulk type-II Dirac fermions which are characterized by strongly tilted Dirac cones, novel surface states, and exotic doping-driven Lifshitz transition. Our results show that the existence of type-II Dirac fermions in PtSe$_2$-type materials is closely related to its structural $P\bar{3}m1$ symmetry, which provides useful guidance for the experimental realization of type-II Dirac fermions and intriguing physical properties distinct from those of the standard Dirac fermions known before.

cond-mat.mtrl-sci↗

arXiv2016

Experimental observation of topological Fermi arcs in type-II Weyl semimetal MoTe2

Weyl semimetal is a new quantum state of matter [1-12] hosting the condensed matter physics counterpart of relativisticWeyl fermion [13] originally introduced in high energy physics. The Weyl semimetal realized in the TaAs class features multiple Fermi arcs arising from topological surface states [10, 11, 14-16] and exhibits novel quantum phenomena, e.g., chiral anomaly induced negative mag-netoresistance [17-19] and possibly emergent supersymmetry [20]. Recently it was proposed theoretically that a new type (type-II) of Weyl fermion [21], which does not have counterpart in high energy physics due to the breaking of Lorentz invariance, can emerge as topologically-protected touching between electron and hole pockets. Here, we report direct spectroscopic evidence of topological Fermi arcs in the predicted type-II Weyl semimetal MoTe2 [22-24]. The topological surface states are confirmed by directly observing the surface states using bulk-and surface-sensitive angle-resolved photoemission spectroscopy (ARPES), and the quasi-particle interference (QPI) pattern between the two putative Fermi arcs in scanning tunneling microscopy (STM). Our work establishes MoTe2 as the first experimental realization of type-II Weyl semimetal, and opens up new opportunities for probing novel phenomena such as exotic magneto-transport [21] in type-II Weyl semimetals.

cond-mat.mes-hall↗

arXiv2016

Electronic properties of SnTe-class topological crystalline insulator materials

The rise of topological insulators in recent years has broken new ground both in the conceptual cognition of condensed matter physics and the promising revolution of the electronic devices. It also stimulates the explorations of more topological states of matter. Topological crystalline insulator is a new topological phase, which combines the electronic topology and crystal symmetry together. In this article, we review the recent progress in the studies of SnTe-class topological crystalline insulator materials. Starting from the topological identifications in the aspects of the bulk topology, surface states calculations and experimental observations, we present the electronic properties of topological crystalline insulators under various perturbations, including native defect, chemical doping, strain, and thickness-dependent confinement effects, and then discuss their unique quantum transport properties, such as valley-selective filtering and helicity-resolved functionalities for Dirac fermions. The rich properties and high tunability make SnTe-class materials promising candidates for novel quantum devices.

cond-mat.mtrl-sci↗

arXiv2016

Lorentz-violating type-II Dirac fermions in transition metal dichalcogenide PtTe$_2$

Topological semimetals have recently attracted extensive research interests as host materials to condensed matter physics counterparts of Dirac and Weyl fermions originally proposed in high energy physics. These fermions with linear dispersions near the Dirac or Weyl points obey Lorentz invariance, and the chiral anomaly leads to novel quantum phenomena such as negative magnetoresistance. The Lorentz invariance is, however, not necessarily respected in condensed matter physics, and thus Lorentz-violating type-II Dirac fermions with strongly tilted cones can be realized in topological semimetals. Here, we report the first experimental evidence of type-II Dirac fermions in bulk stoichiometric PtTe$_2$ single crystal. Angle-resolved photoemission spectroscopy (ARPES) measurements and first-principles calculations reveal a pair of strongly tilted Dirac cones along the $Γ$-A direction under the symmetry protection, confirming PtTe$_2$ as a type-II Dirac semimetal. The realization of type-II Dirac fermions opens a new door for exotic physical properties distinguished from type-I Dirac fermions in condensed matter materials.

cond-mat.mtrl-sci↗

arXiv2016

Topological nodal-line semimetals in alkaline-earth stannides, germanides and silicides

Based on first-principles calculations and an effective Hamiltonian analysis, we systematically investigate the electronic and topological properties of alkaline-earth compounds $AX_2$ ($A$=Ca, Sr, Ba; $X$=Si, Ge, Sn). Taking BaSn$_2$ as an example, we find that when spin-orbit coupling is ignored, these materials are three-dimensional topological nodal-line semimetals characterized by a snake-like nodal loop in three-dimensional momentum space. Drumhead-like surface states emerge either inside or outside the loop circle on the (001) surface depending on surface termination, while complicated double-drumhead-like surface states appear on the (010) surface. When spin-orbit coupling is included, the nodal line is gapped and the system becomes a topological insulator with Z$_2$ topological invariants (1;001). Since spin-orbit coupling effects are weak in light elements, the nodal-line semimetal phase is expected to be achievable in some alkaline-earth germanides and silicides.

cond-mat.mtrl-sci↗

arXiv2016

Dirac semimetal phase in the hexagonal LiZnBi

Based on first-principles calculations, we find that LiZnBi, a metallic hexagonal $ABC$ compound, can be driven into a Dirac semimetal with a pair of Dirac points by strain. The nontrivial topological nature of the strained LiZnBi is directly demonstrated by calculating its $\mathbb{Z}_2$ index and the surface states, where the Fermi arcs are clearly observed. The low-energy states as well as topological properties are shown to be sensitive to the strain configurations. The finding of Dirac semimetal phase in LiZnBi may intrigue further researches on the topological properties of hexagonal $ABC$ materials and promote new practical applications.

cond-mat.mtrl-sci↗

arXiv2016

Direct observation of local Rashba spin polarization and spin-layer locking in centrosymmetric monolayer PtSe$_2$

The generally accepted view that spin polarization is induced by the asymmetry of the global crystal space group has limited the search for spintronics [1] materials to non-centrosymmetric materials. Recently it has been suggested that spin polarization originates fundamentally from local atomic site asymmetries [2], and therefore centrosymmetric materials may exhibit previously overlooked spin polarizations. Here by using spin- and angle-resolved photoemission spectroscopy (spin-ARPES), we report helical spin texture induced by local Rashba effect (R-2) in centrosymmetric monolayer PtSe$_2$ film. First-principles calculations and effective analytical model support the spin-layer locking picture: in contrast to the spin splitting in conventional Rashba effect (R-1), the opposite spin polarizations induced by R-2 are degenerate in energy while spatially separated in the top and bottom Se layers. These results not only enrich our understanding of spin polarization physics, but also may find applications in electrically tunable spintronics.

cond-mat.mtrl-sci↗

arXiv2016

Heavy Dirac fermions in a graphene/topological insulator hetero-junction

The low energy physics of both graphene and surface states of three-dimensional topological insulators is described by gapless Dirac fermions with linear dispersion. In this work, we predict the emergence of a "heavy" Dirac fermion in a graphene/topological insulator hetero-junction, where the linear term almost vanishes and the corresponding energy dispersion becomes highly non-linear. By combining {\it ab initio} calculations and an effective low-energy model, we show explicitly how strong hybridization between Dirac fermions in graphene and the surface states of topological insulators can reduce the Fermi velocity of Dirac fermions. Due to the negligible linear term, interaction effects will be greatly enhanced and can drive "heavy" Dirac fermion states into the half quantum Hall state with non-zero Hall conductance.

cond-mat.mes-hall↗

arXiv2016

Stable Dirac semi-metal in the allotrope of IV elements

Three dimensional topological Dirac semi-metals represent a novel state of quantum matter with exotic electronic properties, in which a pair of Dirac points with the linear dispersion along all momentum directions exist in the bulk. Herein, by using the first principles calculations, we discover a new metastable allotrope of Ge and Sn in the staggered layered dumbbell structure, named as germancite and stancite, to be Dirac semi-metals with a pair of Dirac points on its rotation axis. On the surface parallel to the rotation axis, a pair of topologically non-trivial Fermi arcs are observed and a Lifshitz transition is found by tuning the Fermi level. Furthermore, the quantum thin film of germancite is found to be an intrinsic quantum spin Hall insulator. These discoveries suggest novel physical properties and future applications of the new metastable allotrope of Ge and Sn.

cond-mat.mtrl-sci↗

arXiv2016

Energy gaps of atomically precise armchair graphene nanoribbons

Graphene nanoribbons (GNRs) are one-dimensional (1D) structures that exhibit a rich variety of electronic properties1-17. Therefore, they are predicted to be the building blocks in next-generation nanoelectronic devices. Theoretically, it has been demonstrated that armchair GNRs can be divided into three families, i.e., Na = 3p, Na = 3p + 1, and Na = 3p + 2 (here Na is the number of dimer lines across the ribbon width and p is an integer), according to their electronic structures, and the energy gaps for the three families are quite different even with the same p1,3-6. However, a systematic experimental verification of this fundamental prediction is still lacking, owing to very limited atomic-level control of the width of the armchair GNRs investigated7,9,10,13,17. Here, we studied electronic structures of the armchair GNRs with atomically well-defined widths ranging from Na = 6 to Na = 26 by using scanning tunnelling microscope (STM). Our result demonstrated explicitly that all the studied armchair GNRs exhibit semiconducting gaps due to quantum confinement and, more importantly, the observed gaps as a function of Na are well grouped into the three categories, as predicted by density-functional theory calculations3. Such a result indicated that we can tune the electronic properties of the armchair GNRs dramatically by simply adding or cutting one carbon dimer line along the ribbon width.

cond-mat.mtrl-sci↗

arXiv2015

Creating and probing wide-bandgap nanoribbon-like structures in a continuous metallic graphene sheet

The light-like dispersion of graphene monolayer results in many novel electronic properties in it1, however, this gapless feature also limits the applications of graphene monolayer in digital electronics2. A rare working solution to generate a moderate bandgap in graphene monolayer is to cut it into one-dimensional (1D) nanometre-wide ribbons3-13. Here we show that a wide bandgap can be created in a unique 1D strained structure, i.e., graphene-nanoribbon-like (GNR-like) structure, of a continuous graphene sheet via strong interaction between graphene and the metal substrate, instead of cutting graphene monolayer. The GNR-like structures with width of only a few nanometers are observed in a continuous graphene sheet grown on Rh foil by using thermal strain engineering. Spatially-resolved scanning tunnelling spectroscopy revealed bandgap opening of a few hundreds meV in the GNR-like structure in an otherwise continuous metallic graphene sheet, directly demonstrating the realization of a metallic-semiconducting-metallic junction entirely in a graphene monolayer. We also show that it is possible to tailor the structure and electronic properties of the GNR-like structure by using scanning tunnelling microscope.

cond-mat.mes-hall↗

arXiv2015

Converting normal insulators into topological insulators via tuning orbital levels

Tuning the spin-orbit coupling strength via foreign element doping and/or modifying bonding strength via strain engineering are the major routes to convert normal insulators to topological insulators. We here propose an alternative strategy to realize topological phase transition by tuning the orbital level. Following this strategy, our first-principles calculations demonstrate that a topological phase transition in some cubic perovskite-type compounds CsGeBr$_3$ and CsSnBr$_3$ could be facilitated by carbon substitutional doping. Such unique topological phase transition predominantly results from the lower orbital energy of the carbon dopant, which can pull down the conduction bands and even induce band inversion. Beyond conventional approaches, our finding of tuning the orbital level may greatly expand the range of topologically nontrivial materials.

cond-mat.mtrl-sci↗

arXiv2015

Graphene/g-C2N bilayer:gap opening, enhanced visible light response and electrical field tuning band structure

Opening up a band gap of the graphene and finding a suitable substrate are two challenges for constituting the nano-electronic equipment. A new two-dimensional layered crystal g-C2N (Nat. Commun. 2015, 6, 1--7) with novel electronic and optical properties can be effectively synthesized via a wet-chemical reaction. And g-C2N can be used as a suitable substrate to open the band gap of graphene as much as 0.239 eV, which is large enough for the band gap opening at room temperature. The physics behind the band gap opening is that g-C2N substrate can produce the inhomogeneous electrostatic potential over the graphene layer. The imposition of external electrical field can tune the band gap of the hybrid of graphene/g-C2N effectively from the semiconductors to the metal. The hybrid graphene/g-C2N displays an enhanced optical activity compared with the pure g-C2N monolayer.

cond-mat.mtrl-sci↗

arXiv2015

Band engineering of Dirac surface states in topological insulators-based van der Waals heterostructures

The existence of gapless Dirac surface band of a three dimensional (3D) topological insulator (TI) is guaranteed by the non-trivial topological character of the bulk band, yet the surface band dispersion is mainly determined by the environment near the surface. In this Letter, through in-situ angle-resolved photoemission spectroscopy (ARPES) and the first-principles calculation on 3D TI-based van der Waals heterostructures, we demonstrate that one can engineer the surface band structures of 3D TIs by surface modifications without destroying their topological non-trivial property. The result provides an accessible method to independently control the surface and bulk electronic structures of 3D TIs, and sheds lights in designing artificial topological materials for electronic and spintronic purposes.

cond-mat.mes-hall↗

arXiv2015

Theory of the Dirac Half Metal and Quantum Anomalous Hall Effect in Mn Intercalated Epitaxial Graphene

The prospect of a Dirac half metal, a material which is characterized by a bandstructure with a gap in one spin channel but a Dirac cone in the other, is of both fundamental interest and a natural candidate for use in spin-polarized current applications. However, while the possibility of such a material has been reported based on model calculations[H. Ishizuka and Y. Motome, Phys. Rev. Lett. 109, 237207 (2012)], it remains unclear what material system might realize such an exotic state. Using first-principles calculations, we show that the experimentally accessible Mn intercalated epitaxial graphene on SiC(0001) transits to a Dirac half metal when the coverage is > 1/3 monolayer. This transition results from an orbital-selective breaking of quasi-2D inversion symmetry, leading to symmetry breaking in a single spin channel which is robust against randomness in the distribution of Mn intercalates. Furthermore, the inclusion of spin-orbit interaction naturally drives the system into the quantum anomalous Hall (QAH) state. Our results thus not only demonstrate the practicality of realizing the Dirac half metal beyond a toy model but also open up a new avenue to the realization of the QAH effect.

cond-mat.str-el↗

arXiv2015

Emergence of a Chern-insulating state from a semi-Dirac dispersion

A Chern insulator (quantum anomalous Hall insulator) phase is demonstrated to exist in a typical semi-Dirac system, the TiO2/VO2 heterostructure. By combining first-principles calculations with Wannier-based tight-binding model, we calculate the Berry curvature distribution, finding a Chern number of -2 for the valence bands, and demonstrate the existence of gapless chiral edge states, ensuring quantization of the Hall conductivity to 2e^2/h. A new semi-Dirac model, where each semi-Dirac cone is formed by merging three conventional Dirac points, is proposed to reveal how the nontrivial topology with finite Chern number is compatible with a semi-Dirac electronic spectrum.

cond-mat.mtrl-sci↗