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Wenhui Wan

Publications and source records attributed to Wenhui Wan.

At least 19 recordsLinked to original sources

Engineering 2D high-temperature ferromagnets with large in-plane anisotropy via alkali-metal decoration in a tetragonal CoSe monolayer

Two-dimensional (2D) ferromagnetic materials with high Curie temperature ($T_{\rm c}$) and large magnetic anisotropy energy (MAE) are critical for nanoscale spintronics but remain rare. We propose, via first-principles calculations, that adsorbing alkali atoms ($A$ = Li, Na, K, Rb, Cs) onto a tetragonal CoSe monolayer transforms it into a series of stable 2D ferromagnetic metals, $A$CoSe, with an in-plane easy axis. Notably, LiCoSe is a half-metal. These functionalized monolayers exhibit dramatically enhanced ferromagnetism compared to the pristine layer, with $T_{\rm c}$ > 300 K and MAE > 800 $\mu$eV/Co. The coupled alkali atoms amplify the local magnetic moment of Co ions, reinforce ferromagnetic Ruderman-Kittel-Kasuya-Yosida (RKKY) and superexchange couplings, and concurrently weaken the direct antiferromagnetic exchange between Co ions. Furthermore, tensile strain can further elevate the MAE (via band shifting) and increase $T_{c}$ (by strengthening the nearest-neighbor exchange $J_1$). Among them, NaCoSe exhibits the highest MAE and excellent strain-modulated $T_{c}$, rendering it the most promising candidate material. Our results establish alkali-metal decoration as an effective strategy for realizing 2D ferromagnets with high $T_{\rm c}$ and large MAE in tetragonal lattices.

cond-mat.mtrl-sci

Hexagonal InOI monolayer: a 2D phase-change material combining topological insulator states and piezoelectricity

Two-dimensional (2D) phase-change materials (PCMs) with moderate transition barriers and distinctly contrasting properties are highly desirable for multifunctional devices, yet such systems remain scarce. Using first-principles calculations, we propose a hexagonal InOI monolayer as a promising 2D PCM. This material exhibits two distinct polymorphs: an energetically favorable T$^{\prime}$ phase and a metastable T phase, differentiated by iodine atom positions. The T$^{\prime}$-to-T structural phase transition features a moderate energy barrier $E_b$ of 72.1 meV per formula unit, facilitating reversible switching. Notably, strain engineering tailors the electronic transition, inducing either a metal-to-topological-insulator or a metal-to-normal-insulator transformation. Additionally, this phase transition modulates the piezoelectric response and shifts optical absorption from the infrared to the visible range. These multifunctional properties make 2D hexagonal InOI highly promising for applications in non-volatile memory, low-contact-resistance spintronics, and optical switching devices.

cond-mat.mtrl-sci

Near-room-temperature antiferromagnetism in Janus Fe$X$F ($X$ = O, S) monolayers

Inspired by the recently synthesized hexagonal layered phase of FeF$_2$, we studied the magnetic properties of the 1T-FeF$_2$ monolayer and its Janus Fe$X$F ($X$ = O, S) derivatives by first-principles calculations. Our results confirm that these materials are antiferromagnetic semiconductors, and that anion substitution effectively tunes their material properties: the band gap shifts from 3.37 eV (direct, FeF$_2$) to 2.35 eV (direct, FeOF) and 1.13 eV (indirect, FeSF); the magnetic moment of Fe ions increases; and the N\'{e}el temperature ($T_N$) rises dramatically to 248 K (FeSF) and 207 K (FeOF). Janus structures exhibit enhanced magnetic moment and direct AFM coupling. Under compression, $T_N$ is further optimized to 274 K ($-2$\% strain, FeSF) and 244 K ($-5$\% strain, FeOF). Both Janus materials retain their semiconducting nature and direction of easy magnetization axis under $\pm5$\% strain. This study validates the Janus structure as a viable approach to enhance 2D antiferromagnetism and highlights Fe-based oxyhalides as promising spintronic materials.

cond-mat.mtrl-sci

Integration of promising piezoelectric and photocatalytic properties in Janus In$XY$ ($X$ = S, Se, Te; $Y$ = Cl, Br, I) monolayers and their heterojunctions

Two-dimensional (2D) Janus materials show great promise as piezoelectric materials and photocatalysts for water splitting. In this work, we systematically investigated the piezoelectric and photocatalytic properties of the hexagonal Janus In$XY$ ($X$ = S, Se, Te; $Y$ = Cl, Br, I) monolayers (MLs) using first-principles calculations. Except for InSeCl ML, the remaining eight In$XY$ MLs are stable and exhibit exceptionally high in-plane piezoelectric coefficients ($|d_{22}|$ = 6.07--155.27 pm/V), which exceed those of most known 2D materials. In$XY$ MLs possess band edges straddling the water redox potentials at pH = 0. Their intrinsic vertical polarization induces an intralayer polarization field $E_{\rm intra}$, leading to low exciton binding energies (0.44--0.78 eV). Moreover, their strong vertical piezoelectric responses ($|d_{32}|$ = 0.34--0.65 pm/V) suggest that in-plane stress can further enhance $E_{\rm intra}$ to facilitate the separation of photogenerated carriers. Additionally, these In$XY$ MLs exhibit high electron mobility (101--899 cm$^2$/V/s) and a pronounced anisotropy ratio in carrier mobility, which effectively suppresses charge recombination. Among them, several stand out: InSI and InSeBr MLs show high electron mobility and a large carrier mobility anisotropy ratio; InSeBr ML exhibits excellent in-plane and out-of-plane piezoelectricity; and InSeBr, InSeI, and InTe$Y$ ($Y$ = Cl, Br, I) MLs show strong visible-light absorption. To optimize performance, we constructed a van der Waals heterojunction (InSI/InSeBr), which demonstrates remarkable photocatalytic properties, including enhanced redox ability, a direct Z-scheme charge transfer pathway, strong visible-light absorption, high carrier mobility, and excellent photocorrosion resistance.

cond-mat.mtrl-sci

First principles study on the oxidation resistance of two-dimensional intrinsic and defective GeO2

Although two-dimensional (2D) oxide semiconductors exhibit remarkable oxidation resistance compared to conventional 2D materials, the microscopic physical processes that govern this behavior at the atomic scale remains elusive. Using first-principles calculations, we investigated the defect formation and oxidation dynamics of the GeO${_2}$ monolayer (ML). The investigations reveal that the intrinsic GeO${_2}$ ML is resistant to oxidation due to strong electrostatic repulsion between surface oxygen ions and approaching O$_2$ molecules, effectively suppressing chemisorption. In contrast, defective GeO$_2$ ML with surface O vacancies shows vulnerability to oxidation with the O$_2$ molecule occupying the vacancy through a low-energy activation energy ($E_a$) of 0.375 eV. Remarkably, the subsequent O$_2$ dissociation into atomic species faces a higher activation barrier ($E_a$ = 1.604 eV), suggesting self-limiting oxidation behavior. Electronic structure analysis demonstrates that oxidation primarily modifies the valence bands of defective GeO${_2}$ MLs through oxygen incorporation, while the conduction bands and electron effective mass recover to pristine-like characteristics. We further proved that the high O$_2$ pressure hinders the formation of the O vacancy, while high temperature increases the oxidation rate in GeO$_2$ ML. These atomic-level insights not only advance our understanding of oxidation resistance in 2D oxides but also provide guidelines for developing stable GeO${_2}$-based nanoelectronic devices.

cond-mat.mtrl-sci

SeWS/bilayer-SiC heterojunction: An S-scheme photocatalyst with high visible-light absorption, excellent carrier mobility and adjustable band gap

Vertically stacked heterojunctions have garnered significant attention for their tunable electronic structures and photocatalytic performance, making them promising candidates for next-generation nanodevices. Using first-principles calculations, we systematically investigate the electronic structure, optical characteristics, and charge transfer of WSSe/SiC heterojunctions. Our results reveal that SeWS/monolayer-SiC, SeWS/bilayer-SiC, and SWSe/monolayer-SiC exhibit type-II band alignment, whereas SWSe/bilayer-SiC displays type-I alignment. Notably, SeWS/bilayer-SiC possesses a direct bandgap, in contrast to the indirect bandgaps of the other three configurations. Remarkably, the SeWS/bilayer-SiC heterojunction demonstrates a high absorption coefficient ($10^{5}~\mathrm{cm}^{-1}$) in the visible range and exhibits exceptional anisotropy in carrier transport, with an outstanding hole mobility of $9.58 \times 10^{3}~\mathrm{cm}^{2}\,\mathrm{V}^{-1}\,\mathrm{s}^{-1}$ along the Y-direction. Furthermore, combining thermodynamic stability with an S-scheme charge transfer mechanism, this system exhibits superior redox capability for photocatalytic water splitting, achieving a high hydrogen evolution efficiency of 22.15%, which surpasses the commercial viability threshold (10\%). Furthermore, we demonstrate effective band gap modulation via external electric fields and biaxial strains, with optical absorption coefficients exhibiting strong strain dependence. This work provides fundamental insights into the design of WSSe/SiC heterojunctions for high-efficiency photocatalytic and tunable photodetector applications.

cond-mat.mtrl-sci

Prediction of superconductivity in Bilayer Kagome borophene

The element boron has long been central to two-dimensional superconducting materials, and numerous studies have demonstrated the presence of superconductivity in various boron-based structures. Recent work introduced a new variant: Bilayer Kagome borophene, characterized by its bilayer Kagome lattice with van Hove singularity. Using first-principles calculations, our research investigates the unique electronic structure and superconducting properties of Bilayer Kagome borophene (BK-borophene) through first-principles calculations. BK-borophene is identified as a single-gap superconductor with an initial superconducting transition temperature (Tc) of 11.0 K. By strategically doping the material to align its Fermi level with the Van Hove singularity, Tc is significantly enhanced to 30.0 K. The results contribute to the existing understanding of BK-borophene, highlighting its potential as a member of the expanding family of two-dimensional superconducting materials.

cond-mat.supr-con

First-principles Study of Carrier Mobility in MX (M=Sn, Pb; X=P, As) Monolayers

Compounds from groups IV and V have been the focus of recent research due to their impressive physical characteristics and structural stability. In this study, the MX monolayers (M=Sn, Pb; N=P, As) are investigated with first-principles calculations based on Boltzmann transport theory. The results show that SnP, SnAs, and PbAs all exhibit indirect band gaps, whereas PbP is the only semiconductor with a direct band gap. One important finding is that intravalley scattering has a significant impact on electron-phonon coupling. Interestingly, changes in carrier concentration do not affect the electron mobility within these MX monolayers, with SnP exhibiting the highest electron mobility among them. Subsequently, the SnP under a 6% biaxial strain is further explored and the results demonstrated a considerable increase in electron mobility to 2,511.9 cm^2/Vs, which is attributable to decreased scattering. This suggests that MX monolayers, especially SnP, are promising options for 2D semiconductor materials in the future.

cond-mat.mtrl-sci

First-principles study of two-dimensional transition metal carbide M n+1 C n O 2(M=Nb,Ta)

In the present work, the three stable MXenes M n+1 C n O 2 (M=Nb,Ta) are explored based onfirst-principles calculations. These materials are important derivatives of 2D materials and exhib-it distinctive properties, holding vast potential in nanodevices. All these M n+1 C n O 2 (M=Nb,Ta)materials exhibit outstanding superconducting performance, with corresponding superconductingtransition temperatures of 23.00K, 25.00K, and 29.00K. Analysis reveals that the high supercon-ducting transition temperatures of MXenes M n+1 C n O 2 (M=Nb,Ta) are closely associated with thehigh value of the logarithmic average of phonon frequencies, {\omega} log , and the strong electron-phononcoupling (EPC), attributed to the crucial contribution of low-frequency phonons. Additionally, weapplied strain treatments of 2% and 4% to M n+1 C n O 2 (M=Nb,Ta), resulting in varying changes insuperconducting transition temperatures under different strains.

cond-mat.supr-con

The unexpected magnetism in 2D group-IV-doped GaN for spintronic applications

In this study, the structural and magnetic properties of group-IV-doped monolayer GaN were systematically investigated by first-principles calculations. Among all the group-IV dopants, only Ge and Sn atoms prefer to substitute the Ga atom of monolayer GaN and form a buckling structure with a magnetic moment of 1 $\mu_B$ per dopant. The N-rich growth conditions are more desirable for such a substitution process than the Ga-rich grow conditions. With a large diffusion barrier vertical to the monolayer GaN, both Ge and Sn atoms tend to stay on the same side of monolayer GaN with an antiferromagnetic coupling between them. When intrinsic vacancies exist in monolayer GaN, the magnetic moments of group-IV dopants vanish due to the charge transferring from the dopants to Ga or N vacancies. The precondition creation of Ga vacancies, a plentiful supply of Ge or Sn dopants, and the N-rich conditions can be adopted to maintain the magnetic properties of group-IV-doped monolayer GaN. These theoretical results help to promote the applications of 2D GaN-based materials in spintronics.

cond-mat.mtrl-sci

First-principles calculations on the mechanical, electronic, magnetic and optical properties of two-dimensional Janus Cr$_2$TeX (X= P, As, Sb) monolayers

Janus materials possess extraordinary physical, chemical, and mechanical properties caused by symmetry breaking. Here, the mechanic properties, electronic structure, magnetic properties, and optical properties of Janus Cr$_2$TeX (X= P, As, Sb) monolayers are systematically investigated by the density functional theory. Janus Cr$_2$TeP, Cr$_2$TeAs, and Cr$_2$TeSb are intrinsic ferromagnetic (FM) half-metals with wide spin gaps and half-metallic gaps. Monte Carlo simulations based on the Heisenberg model estimate the Curie temperature (\emph{T}$_c$) of these monolayers are about 583, 608, and 597 K, respectively. Additionally, it is found that Cr$_2$TeX (X= P, As, Sb) monolayers still exhibit FM half-metallic properties under biaxial strain from -6% to 6%. At last, the Cr$_2$TeP monolayer has a higher absorption coefficient than the Cr$_2$TeAs and Cr$_2$TeSb monolayers in the visible region. The results predict that Janus Cr$_2$TeX (X= P, As, Sb) monolayers with novel properties have good potential for applications in future nanodevices.

cond-mat.mtrl-sci

2D-XY ferromagnetism with high transition temperature in Janus monolayer V$_{2}$XN (X = P, As)

Two-dimensional (2D) XY magnets with easy magnetization planes support the nontrivial topological spin textures whose dissipationless transport is highly desirable for 2D spintronic devices. Here, we predicted that Janus monolayer V$_{2}$XN (X = P, As) with a square lattice are 2D-XY ferromagnets by first-principles calculations. Both the magnetocrystalline anisotropy and magnetic shape anisotropy favor an in-plane magnetization, leading to an easy magnetization $xy$-plane in Janus monolayer V$_{2}$XN. Resting on the Monte Carlo simulations, we observed the Berezinskii-Kosterlitz-Thouless (BKT) phase transition in monolayer V$_{2}$XN with transition temperature $T_{\rm BKT}$ being above the room temperature. Especially, monolayer V$_{2}$AsN has a magnetic anisotropy energy (MAE) of 292.0 $\mu$eV per V atom and a $T_{\rm BKT}$ of 434 K, which is larger than that of monolayer V$_{2}$PN. Moreover, a tensile strain of 5\% can further improve the $T_{\rm BKT}$ of monolayer V$_{2}$XN to be above 500 K. Our results indicated that Janus monolayer V$_{2}$XN (X = P, As) were candidate materials to realize high-temperature 2D-XY ferromagnetism for spintronics applications.

cond-mat.mtrl-sci

Topological semimetal phases in a family of monolayer X3YZ6 (X=Nb,Ta, Y=Si,Ge,Sn, Z=S,Se,Te) with abundant nodal lines and nodes

The electronic and topological properties of single-layer X3YZ6 (X=Nb,Ta, Y=Si,Ge,Sn, Z=S,Se,Te) materials have been studied with the aid of first principles calculations. This kind of materials belong to topological semimetals (TMs) with abundant nodal lines and nodes. Considering their similar properties, we focus on the analysis of Ta3SnTe6 and Ta3SiSe6. The present of spin-orbit coupling (SOC) leads to the transition from type-I nodal lines to Dirac points as well as the disappear of type-II Dirac points. The three-dimensional (3D) band diagrams reproduce vividly the characteristics of nodes and nodal lines. The appearance of the flat bands in (110) edge states further confirm their nontrivial topological properties. We also explore the relationship among different nodal lines (nodes), crystal symmetry and SOC. The type-I nodal lines are protected by Mz and My symmetry in the absent of SOC. Symmetry breaking leads to band splitting even in the presence of SOC. The single-layer X3YZ6 can be used as candidates for two-dimensional (2D) TMs and provide a platform for further study of interesting physical phenomena.

cond-mat.mtrl-sci

Two-dimensional antiferromagnetic semiconductor T'-MoTeI from first principles

Two-dimensional intrinsic antiferromagnetic semiconductors are expected to stand out in the spintronic field. The present work finds the monolayer T'-MoTeI is intrinsically an antiferromagnetic semiconductor by using first-principles calculation. Firstly, the dimerized distortion of the Mo atoms causes T'-MoTeI to have dynamic stability, which is different from the small imaginary frequency in the phonon spectrum of T-MoTeI. Secondly, T'-MoTeI is an indirect-bandgap semiconductor with 1.35 eV. Finally, in the systematic study of strain effects, there are significant changes in the electronic structure as well as the bandgap, but the antiferromagnetic ground state is not affected. Monte Carlo simulations predict that the Neel temperature of T'-MoTeI is 95 K. The results suggest that the monolayer T'-MoTeI can be a potential candidate for spintronics applications.

cond-mat.mtrl-sci

Strain Tunable Intrinsic Ferromagnetic in 2D Square CrBr$_2$

Two-dimensional (2D) intrinsic magnetic materials with high Curie temperature (Tc) coexisting with 100% spin-polarization are highly desirable for realizing promising spintronic devices. In the present work, the intrinsic magnetism of monolayer square CrBr2 is predicted by using first-principles calculations. The monolayer CrBr2 is an intrinsic ferromagnetic (FM) half-metal with the half-metallic gap of 1.58 eV. Monte Carlo simulations based on the Heisenberg model estimates Tc as 212 K. Furthermore, the large compressive strain makes CrBr2 undergo ferromagnetic-antiferromagnetic phase transition, when the biaxial tensile strain larger than 9.3% leads to the emergence of semiconducting electronic structures. Our results show that the intrinsic half-metal with a high Tc and controllable magnetic properties endow monolayer square CrBr2 a potential material for spintronic applications.

cond-mat.mtrl-sci

Quantum spin Hall effect in two-dimensional transition-metal chalcogenides

Based on first-principles calculations, we have found a family of 2D transition-metal (TM) chalcogenides MX5 (M = Zr, Hf and X = S, Se and Te) can host quantum spin Hall (QSH) effect. The molecular dynamics simulation indicate that they are all thermal-dynamically stable at room temperature, the largest band gap is 0.19 eV. We have investigated MX5's electronic properties and found their properties are very similar. The single-layer ZrX5 are all gapless semimetals without consideration of spin-orbit coupling (SOC). The consideration of SOC will result in insulating phases with band gaps of 0.05 eV (direct), 0.18 eV (direct) and 0.13 eV (indirect) for ZrS5, ZrSe5 to ZrTe5, respectively. The evolution of Wannier charge centers and edge states confirm they are all QSH insulators. The mechanisms for QSH effect in ZrX5 originate from the special nonsymmorphic space group features. In addition, the QSH state of ZrS5 survives at a large range of strain as long as the interchain coupling is not strong enough to reverse the band ordering. The single-layer ZrS5 will occur a topological insulator (TI)-to-semimetal (metal) or metal-to-semimetal transition under certain strain. Monolayer MX5 expand the TI materials based on TM chalcogenides and may open up a new way to fabricate novel low power spintronic devices at room temperature.

cond-mat.mtrl-sci

Robust large-gap topological insulator phase in transition-metal chalcogenide ZrTe$_4$Se

Based on density functional theory (DFT), we investigate the electronic properties of bulk and single-layer ZrTe$_4$Se. The band structure of bulk ZrTe$_4$Se can produce a semimetal-to-topological insulator (TI) phase transition under uniaxial strain. The maximum global band gap is 0.189 eV at the 7\% tensile strain. Meanwhile, the Z$_2$ invariants (0; 110) demonstrate conclusively it is a weak topological insulator (WTI). The two Dirac cones for the (001) surface further confirm the nontrivial topological nature. The single-layer ZrTe$_4$Se is a quantum spin Hall (QSH) insulator with a band gap 86.4 meV and Z$_2$=1, the nontrivial metallic edge states further confirm the nontrivial topological nature. The maximum global band gap is 0.211 eV at the tensile strain 8\%. When the compressive strain is more than 1\%, the band structure of single-layer ZrTe$_4$Se produces a TI-to-semimetal transition. These theoretical analysis may provide a method for searching large band gap TIs and platform for topological nanoelectronic device applications.

cond-mat.mtrl-sci

High Curie Temperature Ferromagnetic Semiconductor: Bimetal Transition Iodide V$_2$Cr$_2$I$_9$

Bimetal transition iodides in two-dimensional scale provide an interesting idea to combine a set of single-transition-metal ferromagnetic semiconductors together. Motivated by structural engineering on bilayer CrI$_3$ to tune its magnetism and works that realize ideal properties by stacking van der Waals transitional metal dichalcogenides in a certain order. Here we stack monolayer VI$_3$ onto monolayer CrI$_3$ with a middle-layer I atoms discarded to construct monolayer V$_2$Cr$_2$I$_9$. Based on this crystal model, the stable and metastable phases are determined among 7 possible phases by first-principles calculations. It is illustrated that both the two phases have Curie temperature $\sim$ 6 (4) times higher than monolayer CrI$_3$ and VI$_3$. The reason can be partly attributed to their large magnetic anisotropy energy (the maximum value reaches 412.9 $\mu$eV/atom). More importantly, the Curie temperature shows an electric field and strain dependent character and can even surpass room temperature under a moderate strain range. At last, we believe that the bimetal transition iodide V$_2$Cr$_2$I$_9$ monolayer would support potential opportunities for spintronic devices.

cond-mat.mtrl-sci