arXiv subjects

Wenjing He

Publications and source records attributed to Wenjing He.

6 recordsLinked to original sources

arXiv2026

On a problem of minimal additive complements for not eventually periodic $S$-difference sets

Let $C$ and $W$ be two integer sets. If $C+W=\mathbb{Z}$, then we say that $C$ is an additive complement to $W$. If no proper subset of $C$ is an additive complement to $W$, then we say that $C$ is a minimal additive complement to $W$. In this paper, we give an affirmative answer to one problem of Ma and Chen [On a problem of minimal additive complements of integers, J. Number Theory 284(2026), 178-187.]

math.NT↗

arXiv2021

Moiré circuits: engineering magic-angle behaviors

Moiré superlattices in the twisted bilayer graphene provide an unprecedented platform to investigate a wide range of exotic quantum phenomena. Recently, the twist degree of freedom has been introduced into various classical wave systems, giving rise to new ideas for the wave control. The question is whether twistronics and moiré physics can be extended to electronics with potential applications in the twist-enabled signal processing. Here, we demonstrate both in theory and experiment that lots of fascinating moiré physics can be engineered using electric circuits with extremely high degrees of freedom. By suitably designing the interlayer coupling and biasing of one sublattice for the twisted bilayer circuit, the low-energy flat bands with large bandgaps away from other states can be realized at various twist angles. Based on the moiré circuit with a fixed twist angle, we experimentally demonstrate the effect of band narrowing as well as the localization of electric energy when a magic value of the interlayer coupling is applied. Furthermore, the topological edge states, which originate from the moiré potential induced pseudomagnetic field, are also observed for the first time. Our findings suggest a flexible platform to study twistronics beyond natural materials and other classical wave systems, and may have potential applications in the field of intergraded circuit design.

cond-mat.mes-hall↗

arXiv2021

Observation of hybrid higher-order skin-topological effect in non-Hermitian topolectrical circuits

Robust boundary states epitomize how deep physics can give rise to concrete experimental signatures with technological promise. Of late, much attention has focused on two distinct mechanisms for boundary robustness - topological protection, as well as the non-Hermitian skin effect. In this work, we report the first experimental realizations of hybrid higher-order skin-topological effect, in which the skin effect selectively acts only on the topological boundary modes, not the bulk modes. Our experiments, which are performed on specially designed non-reciprocal 2D and 3D topolectrical circuit lattices, showcases how non-reciprocal pumping and topological localization dynamically interplays to form various novel states like 2D skin-topological, 3D skin-topological-topological hybrid states, as well as 2D and 3D higher-order non-Hermitian skin states. Realized through our highly versatile and scalable circuit platform, theses states have no Hermitian nor lower-dimensional analog, and pave the way for new applications in topological switching and sensing through the simultaneous non-trivial interplay of skin and topological boundary localizations.

cond-mat.mes-hall↗

arXiv2021

Experimental Observation of Higher-Order Topological Anderson Insulators

Recently, a new family of symmetry-protected higher-order topological insulators has been proposed and was shown to host lower-dimensional boundary states. However, with the existence of the strong disorder in the bulk, the crystal symmetry is broken, and the associated corner states are disappeared. It is well known that the emergence of robust edge states and quantized transport can be induced by adding sufficient disorders into a topologically trivial insulator, that is the so-called topological Anderson insulator. The question is whether disorders can also cause the higher-order topological phase. This is not known so far, because interactions between disorders and the higher-order topological phases are completely different from those with the first-order topological system. Here, we demonstrate theoretically that the disorderinduced higher-order topological corner state and quantized fraction corner charge can appear in a modified Haldane model. In experiments, we construct the classical analog of such higherorder topological Anderson insulators using electric circuits and observe the disorder-induced corner state through the voltage measurement. Our work defies the conventional view that the disorder is detrimental to the higher-order topological phase, and offers a feasible platform to investigate the interaction between disorders and higher-order topological phases.

cond-mat.mes-hall↗

arXiv2020

Topolectrical-circuit realization of 4D hexadecapole insulator

Recently, the theory of quantized dipole polarization has been extended to account for electric multipole moments, giving rise to the discovery of multipole topological insulators (TIs). Both two-dimensional (2D) quadrupole and three-dimensional (3D) octupole TIs with robust zero-dimensional (0D) corner states have been realized in various classical systems. However, due to the intrinsic 3D limitation, the higher dimensional multipole TIs, such as four-dimensional (4D) hexadecapole TIs, are supposed to be extremely hard to construct in real space, although some of their properties have been discussed through the synthetic dimensions. Here, we theoretically propose and experimentally demonstrate the realization of classical analog of 4D hexadecapole TI based on the electric circuits in fully real space. The explicit construction of 4D hexadecapole circuits, where the connection of nodes is allowed in any desired way free from constraints of locality and dimensionality, is provided. By direct circuit simulations and impedance measurements, the in-gap corner states protected by the quantized hexadecapole moment in the 4D circuit lattices are observed and the robustness of corner state is also demonstrated. Our work offers a new pathway to study the higher order/dimensional topological physics in real space.

cond-mat.mes-hall↗

arXiv2019

Topolectrical-circuit octupole insulator with topologically protected corner states

Recent theoretical studies have extended the Berry phase framework to account for higher electric multipole moments, quadrupole and octupole topological phases have been proposed. Although the two-dimensional quantized quadrupole insulators have been demonstrated experimentally, octupole topological phases have not previously been observed experimentally. Here we report on the experimental realization of classical analog of octupole topological insulator in the electric circuit system. Three-dimensional topolectrical circuits for realizing such topological phases are constructed experimentally. We observe octupole topological states protected by the topology of the bulk, which are localized at the corners. Our results provide conclusive evidence of a form of robustness against disorder and deformation, which is characteristic of octupole topological insulators. Our study opens a new route toward higher-order topological phenomena in three-dimensions and paves the way for employing topolectrical circuitry to study complex topological phenomena.

cond-mat.mes-hall↗