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Wenka Zhu

Publications and source records attributed to Wenka Zhu.

3 recordsLinked to original sources

Orbital-Selective Spin-Orbit Mott Insulator in Fractional Valence Iridate La$_3$Ir$_3$O$_{11}$

The combination of strong spin-orbit coupling and Coulomb interactions makes the $5d$ iridates a unique platform for realizing novel correlated electronic states. Here, utilizing infrared spectroscopy, we demonstrate that a robust Mott insulating state persists in the $1/3$-hole self-doped system La$_3$Ir$_3$O$_{11}$, evidenced by the collapse of the Drude response and the emergence of sharp excitations across the Mott gap. Our theoretical calculations reveal that the insulating behavior arises from the cooperative interplay of structural distortions, spin-orbit coupling, and Coulomb interactions. Specifically, octahedral distortion and Ir-Ir dimerization split the $t_{2g}$ orbitals, driving the $J_{\mathrm{eff}} = 1/2$ bands toward half-filling while keeping the $J_{\mathrm{eff}} = 3/2$ bands away from it. Consequently, electron correlations induce an orbital-selective Mott transition in the $J_{\mathrm{eff}} = 1/2$ bands, whereas a band-insulating gap develops in the $J_{\mathrm{eff}} = 3/2$ bands, thereby stabilizing the unconventional insulating state in La$_3$Ir$_3$O$_{11}$. These findings provide new insights into the design and understanding of the insulating ground state of spin-orbit-coupled iridates.

cond-mat.str-el

Ultrasensitive, Ultrafast and Gate-Tunable Two-Dimensional Photodetectors in Ternary Rhombohedral ZnIn2S4 for Optical Neural Networks

The demand for high-performance semiconductors in electronics and optoelectronics has prompted the expansion of low-dimensional materials research to ternary compounds. However, photodetectors based on 2D ternary materials usually suffer from large dark currents and slow response, which means increased power consumption and reduced performance. Here we report a systematic study of the optoelectronic properties of well-characterized rhombohedral ZnIn2S4 (R-ZIS) nanosheets which exhibit an extremely low dark current (7 pA at 5 V bias). The superior performance represented by a series of parameters surpasses most 2D counterparts. The ultrahigh specific detectivity (1.8 x 10^14 Jones), comparably short response time (τ_rise = 222 μs, τ_decay = 158 μs) and compatibility with high-frequency operation (1000 Hz) are particularly prominent. Moreover, a gate-tunable characteristic is observed, which is attributed to photogating and improves the photoresponse by two orders of magnitude. Gating technique can effectively modulate the photocurrent-generation mechanism from photoconductive effect to dominant photogating. The combination of ultrahigh sensitivity, ultrafast response and high gate tunability makes the R-ZIS phototransistor an ideal device for low-energy-consumption and high-frequency optoelectronic applications, which is further demonstrated by its excellent performance in optical neural networks and promising potential in optical deep learning and computing.

cond-mat.mes-hall

Epitaxial thin films of pyrochlore iridate Bi_{2+x}Ir_{2-y}O_{7-delta}: structure, defects and transport properties

While pyrochlore iridate thin films are theoretically predicted to possess a variety of emergent topological properties, experimental verification of these predictions can be obstructed by the challenge in thin film growth. Here we report on the pulsed laser deposition and characterization of thin films of a representative pyrochlore compound Bi2Ir2O7. The films were epitaxially grown on yttria-stabilized zirconia substrates and have lattice constants that are a few percent larger than that of the bulk single crystals. The film composition shows a strong dependence on the oxygen partial pressure. Density-functional-theory calculations indicate the existence of Bi_Ir antisite defects, qualitatively consistent with the high Bi: Ir ratio found in the films. Both Ir and Bi have oxidation states that are lower than their nominal values, suggesting the existence of oxygen deficiency. The iridate thin films show a variety of intriguing transport characteristics, including multiple charge carriers, logarithmic dependence of resistance on temperature, antilocalization corrections to conductance due to spin-orbit interactions, and linear positive magnetoresistance.

cond-mat.mtrl-sci