arXiv subjects

Wenqi Xiong

Publications and source records attributed to Wenqi Xiong.

6 recordsLinked to original sources

arXiv2025

Pressure Tuning of Layer-hybridized Excitons in Trilayer WSe2

We demonstrate dynamic pressure tuning (0-6.6 GPa) of layer-hybridized excitons in AB-stacked trilayer WSe$_2$ via diamond-anvil-cell-integrated reflectance spectroscopy. Pressure-controlled interlayer coupling manifests in enhanced energy-level anti-crossings and oscillator strength redistribution, with Stark shift analysis revealing a characteristic dipole moment reduction of 11%. Notably, the hybridization strength between the intra- and interlayer excitons triples from $\sim$10 meV to above $\sim$30 meV, exhibiting a near-linear scaling of 3.5$\pm$0.2 meV/GPa. Spectral density simulations resolve four distinct components, i.e., intralayer ground/excited and interlayer ground/excited excitons, with their relative weights transitioning from one component dominant to strongly hybridized at higher pressures. Our findings highlight the potential for controlling excitonic properties and engineering novel optoelectronic devices through interlayer compression.

cond-mat.mtrl-sci↗

arXiv2024

Ferromagnetism and correlated insulating states in monolayer Mo33Te56

Kagome lattices have an inherent two-dimensional nature. Despite previous realizations in the monolayer limit, their abilities to drive emergent electronic states such as correlated insulators have remained unobserved. Here, we report the experimental realization of a new structural phase of monolayer Mo33Te56, characterized by its virtually global uniformity as a mirror-twin boundary loop superlattice embedded in an H-MoTe2 monolayer. Through a combination of scanning tunnelling microscopy (STM) and theoretical calculations, we unveil a kagome geometry along with multiple associated sets of kagome flat bands. Crucially, the partial filling of these kagome bands induces ferromagnetism as revealed by spin-polarized STM, and leads to a correlated insulating state exhibiting a hard gap as large as 15 meV. Our findings represent a major advance in kagome materials, offering a framework with clearer band structures and more intrinsic two-dimensional properties for exploring flat-band physics.

cond-mat.mtrl-sci↗

arXiv2023

Enhanced hydrogen-gas permeation through rippled graphene

The penetration of atomic hydrogen through defect-free graphene was generally predicted to have a barrier of at least several eV, which is much higher than the 1 eV barrier measured for hydrogen-gas permeation through pristine graphene membranes. Herein, our density functional theory calculations show that ripples, which are ubiquitous in atomically thin crystals and mostly overlooked in the previous simulations, can significantly reduce the barriers for all steps constituting the mechanism of hydrogen-gas permeation through graphene membranes, including dissociation of hydrogen molecules, reconstruction of the dissociated hydrogen atoms and their flipping across graphene. Especially, the flipping barrier of hydrogen atoms from a cluster configuration is found to decrease rapidly down to <1 eV with increasing ripples' curvature. The estimated hydrogen permeation rates by fully considering the distribution of ripples with all realistic curvatures and the major reaction steps that occurred on them are quite close to the experimental measurements. Our work provides insights into the fundamental understanding of hydrogen-gas permeation through graphene membranes and emphasizes the importance of nanoscale non-flatness (ripples) in explaining many surface and transport phenomena (for example, functionalization, corrosion and separation) in graphene and other two-dimensional materials.

cond-mat.mtrl-sci↗

arXiv2021

Structure-Composition-Property Relationships in Antiperovskite Nitrides: Guiding a Rational Alloy Design

The alloy strategy through A- or X-site is a common method for experimental preparation of high-performance and stable lead-based perovskite solar cells. As one of the important candidates for lead-free and stable photovoltaic absorber, the inorganic antiperovskite family has recently been reported to exhibit excellent optoelectronic properties. However, the current reports on the design of antiperovskite alloys are rare. In this work, we investigated the previously overlooked electronic property (e.g., conduction band convergence), static dielectric constant, and exciton binding energy in inorganic antiperovskite nitrides by first-principles calculations. Then, we reveal a linear relationship between tolerance factor and various physical quantities. Guided by the established structure-composition-property relationship in six antiperovskite nitrides X3NA (X2+ = Mg2+, Ca2+, Sr2+; A3- = P3-, As3-, Sb3-, Bi3-), for the first time, we design a promising antiperovskite alloy Mg3NAs0.5Bi0.5 with the quasi-direct band gap of 1.402 eV. Finally, we make a comprehensive comparison between antiperovskite nitrides and conventional halide perovskites for pointing out the future direction for device applications.

cond-mat.mtrl-sci↗

arXiv2020

Strain-induced semiconductor to metal transition in MA2Z4 bilayers

Very recently, a new type of two-dimensional layered material MoSi2N4 has been fabricated, which is semiconducting with weak interlayer interaction, high strength, and excellent stability. We systematically investigate theoretically the effect of vertical strain on the electronic structure of MA2Z4 (M=Ti/Cr/Mo, A=Si, Z=N/P) bilayers. Taking bilayer MoSi2N4 as an example, our first principle calculations show that its indirect band gap decreases monotonically as the vertical compressive strain increases. Under a critical strain around 22%, it undergoes a transition from semiconductor to metal. We attribute this to the opposite energy shift of states in different layers, which originates from the built-in electric field induced by the asymmetric charge transfer between two inner sublayers near the interface. Similar semiconductor to metal transitions are observed in other strained MA2Z4 bilayers, and the estimated critical pressures to realize such transitions are within the same order as semiconducting transition metal dichalcogenides. The semiconductor to metal transitions observed in the family of MA2Z4 bilayers present interesting possibilities for strain-induced engineering of their electronic properties.

cond-mat.mtrl-sci↗

arXiv2019

Two-dimensional transition metal chalcogenides with hexagonal and orthorhombic structures: candidates for auxetics and photocatalysts

In this paper, we perform theoretical study on the physical properties of two-dimensional transition metal chalcogenides MX$_{2}$ and M$_{2}$X$_{3}$ (M= Ni, Pd; X= S, Se, Te). These studied materials are classified in three stable phases according to their lattice structures: hexagonal MX$_{2}$, orthorhombic MX$_{2}$ and orthorhombic M$_{2}$X$_{3}$. They have either isotropic or anisotropic in-plane properties depending on their symmetries. In particular, the orthorhombic MX$_{2}$ and M$_{2}$X$_{3}$ have low lattice symmetry and present highly anisotropic properties. The orthorhombic MX$_{2}$ possess giant negative in-plane Poisson's ratios, different from the other two phases. Moreover, by joint analysis of band gap, band edge and optical absorption, the orthorhombic MX$_{2}$ and M$_{2}$X$_{3}$ are found to be highly efficient as water splitting photocatalysts within the visible and ultraviolet sunlight regions.

cond-mat.mtrl-sci↗