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Wenxing Chen

Publications and source records attributed to Wenxing Chen.

2 recordsLinked to original sources

Magnetic field-induced non-trivial Lifshitz transition in TaCo2Te2

Magnetic-field-driven Lifshitz transitions are typically considered zero-temperature phenomena involving Fermi-surface reconstruction without symmetry breaking. Here, we report an unconventional Lifshitz transition in TaCo2Te2 that emerges exclusively within a narrow finite-temperature window under cooperative tuning by both temperature and magnetic field. Bulk-sensitive transport and thermoelectric measurements demonstrate continuous Fermi-surface renormalization at low temperatures, where the transition is sharply triggered by a critical magnetic field. Crucially, neutron diffraction reveals the absence of structural or magnetic phase transitions, while angle-resolved photoemission spectroscopy shows no spectral anomalies in electronic structure without magnetic field. These observations constrain the mechanism to a Zeeman-driven process invisible to equilibrium probes, establishing a paradigm where Fermi-surface topology is jointly controlled by temperature and magnetic field.

cond-mat.mtrl-sci

Colossal magnetoresistance in a quasi-two-dimensional cluster glass semiconductor

With a surge of interest in spintronics, the manipulation and detection of colossal magnetoresistance in quasi-two-dimensional layered magnetic materials have become a key focus, driven by their relatively scarce occurrence compared to giant magnetoresistance and tunneling magnetoresistance. This study presents an investigation into the desired colossal magnetoresistance, achieved by introducing magnetic frustration through Te doping in quasi-two-dimensional antiferromagnet Cr2Se3 matrix. The resulting Cr0.98SeTe0.27 exhibits cluster glass-like behavior with a freezing temperature of 28 K. Magnetotransport studies reveal a significant negative magnetoresistance of up to 32%. Additionally, angle-dependent transport measurements demonstrate a magnetic field-induced transition from positive to negative resistance anisotropy, suggesting a magnetic field-driven alteration in the electronic structure of this narrow band gap semiconductor, a characteristic feature of the colossal magnetoresistance effect. This behavior is further corroborated by density functional theory calculations. This systematic investigation provides a crucial understanding of the control of colossal magnetoresistance in quasi-two-dimensional materials via competing exchange interactions.

cond-mat.mtrl-sci