SearcharxivSearch

arXiv subjects

Wenyu Hu

Publications and source records attributed to Wenyu Hu.

4 recordsLinked to original sources

The Attention Market: Interpreting Online Fair Re-ranking as Manifold Optimization under Walrasian Equilibrium

Fair re-ranking aims to promote long-tail items and enhance diversity within groups in information retrieval. While previous research on online fairness-aware re-ranking has shown promising outcomes, our comprehensive evaluation of online fair re-ranking methods over 20 settings reveals significant performance disparities among existing methods. To uncover the root causes of these inconsistencies, we reformulate fair re-ranking within an attentional market framework governed by a Walrasian Equilibrium, where the fairness is treated as a taxation cost. This market-based formulation is then coupled with manifold optimization, demonstrating that seeking this equilibrium is equivalent to performing gradient descent on a specific ranking manifold constructed by the market. Different re-ranking settings induce distinct manifold geometries, and these intrinsic geometric differences dictate the gradient landscapes and optimization trajectories. We propose ManifoldRank, an efficient online fair re-ranking algorithm. ManifoldRank adjusts gradients to align with the ranking manifold, considering various contextual settings. On the supply side, it incorporates a gradient adjustment based on different fairness requirements, accounting for associated costs. On the demand side, it empirically predicts an additional gradient adjustment term derived from the ranking scores. By integrating these two gradient adjustments, ManifoldRank effectively balances fairness and accuracy. Experimental results across multiple datasets confirm ManifoldRank's effectiveness.

cs.IR

Epitaxial Growth and Anomalous Hall Effect in High-Quality Altermagnetic $\alpha$-MnTe Thin Films

The recent identification of $\alpha$-MnTe as a candidate altermagnet has attracted considerable interest, particularly for its potential application in magnetic random-access memory. However, the development of high-quality thin films - essential for practical implementation - has remained limited. Here, we report the epitaxial growth of centimeter-scale $\alpha$-MnTe thin films on InP(111) substrates via molecular beam epitaxy (MBE). Through X-ray diffraction (XRD) analysis, we construct a MnTe phase diagram that provides clear guidance for stabilizing the pure $\alpha$-MnTe phase, revealing that it is favored under high Te/Mn flux ratios and elevated growth temperatures. Cross-sectional electron microscopy confirms an atomically sharp film-substrate interface, consistent with a layer-by-layer epitaxial growth mode. Remarkably, these high-quality $\alpha$-MnTe films exhibit a pronounced anomalous Hall effect (AHE) originating from Berry curvature, despite a net magnetic moment approaching zero - a signature of robust altermagnetic character. Our work establishes a viable route for synthesizing wafer-scale $\alpha$-MnTe thin films and highlights their promise for altermagnet-based spintronics and magnetic sensing.

cond-mat.mtrl-sci

Direct imaging of quantum interference and Non-Abelian entanglement in Hopfion: an magnetic soliton possess loop-like anyonic properties

This work provides the first experimental elucidation of quantum topological effects in individual hopfions, establishing their potential as building blocks for three-dimensional topological quantum spintronics. The observed Non-Abelian characteristics suggest pathways toward fault-tolerant quantum operations through controlled hopfion braiding in engineered magnetic metamaterials.

cond-mat.mes-hall

Preferential bond formation and interstitial/vacancy annihilation rate drive atomic clustering in gallium ion sputtered compound materials

The investigation of chemical reactions during the ion irradiation is a frontier for the study of the ion-material interaction. In order to derive the contribution of bond formation to chemistry of ion produced nanoclusters, the valence electron energy loss spectroscopy (VEELS) was exploited to investigate the Ga$^+$ ion damage in Al$_2$O$_3$, InP and InGaAs, where each target material has been shown to yield different process for altering the clustering of recoil atoms: metallic Ga, metallic In and InGaP clusters in Al$_2$O$_3$, InP and InGaAs respectively. Supporting simulations based on Monte Carlo and crystal orbital Hamiltonianindicate that the chemical constitution of cascade induced nano-precipitates is a result of a competition between interstitial/vacancy consumption rate and preferential bond formation.

cond-mat.mtrl-sci