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Wenzhuo Wu

Publications and source records attributed to Wenzhuo Wu.

At least 19 recordsLinked to original sources

DataEvolver: Let Your Data Build and Improve Itself via Goal-Driven Loop Agents

Constructing controllable visual data is a major bottleneck for image editing and multimodal understanding. Useful supervision is rarely produced by a single rendering pass; instead it emerges through iterative generation, inspection, correction, filtering, and export. We present DataEvolver, a closed-loop visual data engine that organizes this process around explicit goals, persistent artifacts, bounded corrective actions, and acceptance decisions. DataEvolver supports multiple artifact types, including RGB images, masks, depth maps, normal maps, meshes, poses, trajectories, and review traces. In the current release, the system operates through two coupled loops: generation-time self-correction within each sample and validation-time self-expansion across dataset rounds. We validate the framework on an image-level object-rotation setting. With a fixed Qwen-Edit LoRA probe, our final Ours+DualGate model outperforms both the unadapted base model and a public multi-angle LoRA on SpatialEdit and a held-out evaluation set. Ablations show a consistent improvement path from scene-aware generation to feedback-driven correction and dual-gated validation. Beyond the released rotation data, our main contribution is a reusable framework for building visual datasets through explicit goal tracking, review, correction, and acceptance loops.

cs.AI

Geometric Image Editing via Effects-Sensitive In-Context Inpainting with Diffusion Transformers

Recent advances in diffusion models have significantly improved image editing. However, challenges persist in handling geometric transformations, such as translation, rotation, and scaling, particularly in complex scenes. Existing approaches suffer from two main limitations: (1) difficulty in achieving accurate geometric editing of object translation, rotation, and scaling; (2) inadequate modeling of intricate lighting and shadow effects, leading to unrealistic results. To address these issues, we propose GeoEdit, a framework that leverages in-context generation through a diffusion transformer module, which integrates geometric transformations for precise object edits. Moreover, we introduce Effects-Sensitive Attention, which enhances the modeling of intricate lighting and shadow effects for improved realism. To further support training, we construct RS-Objects, a large-scale geometric editing dataset containing over 120,000 high-quality image pairs, enabling the model to learn precise geometric editing while generating realistic lighting and shadows. Extensive experiments on public benchmarks demonstrate that GeoEdit consistently outperforms state-of-the-art methods in terms of visual quality, geometric accuracy, and realism.

cs.CV

Physics Informed Constrained Learning of Dynamics from Static Data

A physics-informed neural network (PINN) models the dynamics of a system by integrating the governing physical laws into the architecture of a neural network. By enforcing physical laws as constraints, PINN overcomes challenges with data scarsity and potentially high dimensionality. Existing PINN frameworks rely on fully observed time-course data, the acquisition of which could be prohibitive for many systems. In this study, we developed a new PINN learning paradigm, namely Constrained Learning, that enables the approximation of first-order derivatives or motions using non-time course or partially observed data. Computational principles and a general mathematical formulation of Constrained Learning were developed. We further introduced MPOCtrL (Message Passing Optimization-based Constrained Learning) an optimization approach tailored for the Constrained Learning framework that strives to balance the fitting of physical models and observed data. Its code is available at github link: https://github.com/ptdang1001/MPOCtrL Experiments on synthetic and real-world data demonstrated that MPOCtrL can effectively detect the nonlinear dependency between observed data and the underlying physical properties of the system. In particular, on the task of metabolic flux analysis, MPOCtrL outperforms all existing data-driven flux estimators.

cs.LG

Ultralow Voltage Operation of p- and n-FETs Enabled by Self-Formed Gate Dielectric and Metal Contacts on 2D Tellurium

The ongoing demand for more energy-efficient, high-performance electronics is driving the exploration of innovative materials and device architectures, where interfaces play a crucial role due to the continuous downscaling of device dimensions. Tellurium (Te), in its two-dimensional (2D) form, offers significant potential due to its high carrier mobility and ambipolar characteristics, with the carrier type easily tunable via surface modulation. In this study, we leverage atomically controlled material transformations in 2D Te to create intimate junctions, enabling near-ideal field-effect transistors (FETs) for both n-type and p-type operation. A NiTex-Te contact provides highly transparent interfaces, resulting in low contact resistance, while the TiOx-Te gate dielectric forms an ultraclean interface with a capacitance equivalent to 0.88 nm equivalent oxide thickness (EOT), where the quantum capacitance of Te is observed. Subthreshold slopes (SS) approach the Boltzmann limit, with a record-low SS of 3.5 mV/dec achieved at 10 K. Furthermore, we demonstrate 2D Te-based complementary metal-oxide-semiconductor (CMOS) inverters operating at an ultralow voltage of 0.08 V with a voltage gain of 7.1 V/V. This work presents a promising approach to forming intimate dielectric/semiconductor and metal/semiconductor junctions for next-generation low-power electronic devices.

physics.app-ph

Thickness-Dependent Polaron Crossover in Tellurene

Polarons, quasiparticles arising from electron-phonon coupling, are crucial in understanding material properties such as high-temperature superconductivity and colossal magnetoresistance. However, scarce studies have been performed to investigate the formation of polarons in low-dimensional materials with phonon polarity and electronic structure transitions. In this work, we studied polarons of tellurene that are composed of chiral chains of tellurium atoms. The frequency and linewidth of the A1 phonon, which becomes increasingly polar for thinner tellurene, exhibit an abrupt change when the thickness of tellurene is below 10 nm. Meanwhile, the field effect mobility of tellurene drops rapidly as the thickness is smaller than 10 nm. These phonon and transport signatures, combined with the calculated phonon polarity and band structure, suggest a crossover from large polarons for bulk tellurium to small polarons for few-layer tellurene. Effective field theory considers the phonon renormalization in the strong coupling (small polaron) regime, and semi-quantitatively reproduces the observed phonon hardening and broadening effects in few-layer tellurene. This polaron crossover stems from the quasi-1D nature of tellurene where modulation of the interchain distance reduces the dielectric screening and promotes electron-phonon coupling. Our work provides valuable insights into the influence of polarons on phononic, electronic, and structural properties in low-dimensional materials.

cond-mat.mtrl-sci

Tunable Circular Photogalvanic and Photovoltaic Effect in 2D Tellurium with Different Chirality

Chirality arises from the asymmetry of matters, where two counterparts are the mirror image of each other. The interaction between circular-polarization light and quantum materials is enhanced in chiral space groups due to the structural chirality. Tellurium (Te) possesses the simplest chiral crystal structure, with Te atoms covalently bonded into a spiral atomic chain (left- or right-handed) with a periodicity of three. Here, we investigate the tunable circular photo-electric responses in 2D Te field-effect transistor with different chirality, including the longitudinal circular photogalvanic effect induced by the radial spin texture (electron-spin polarization parallel to the electron momentum direction) and the circular photovoltaic induced by the chiral crystal structure (helical Te atomic chains). Our work demonstrates the controllable manipulation of the chirality degree of freedom in materials.

cond-mat.mes-hall

Tunable Chirality-dependent Nonlinear Electrical Responses in 2D Tellurium

Tellurium (Te) is an elemental semiconductor with a simple chiral crystal structure. Te in a two-dimensional (2D) form synthesized by solution-based method shows excellent electrical, optical, and thermal properties. In this work, the chirality of hydrothermally grown 2D Te is identified and analyzed by hot sulfuric acid etching and high-angle tilted high-resolution scanning transmission electron microscopy. The gate-tunable nonlinear electrical responses, including the nonreciprocal electrical transport in the longitudinal direction and the nonlinear planar Hall effect in the transverse direction, are observed in 2D Te under a magnetic field. Moreover, the nonlinear electrical responses have opposite signs in left- and right-handed 2D Te due to the opposite spin polarizations ensured by the chiral symmetry. The fundamental relationship between the spin-orbit coupling and the crystal symmetry in two enantiomers provides a viable platform for realizing chirality-based electronic devices by introducing the chirality degree of freedom into electron transport.

cond-mat.mtrl-sci

Photocatalytic oxidation in few-layer Tellurene for loss-invariant integrated photonic resonance trimming

Two-dimensional materials with unique physicochemical properties promote photocatalytic activities. As the 2D material composites research studies the statistical average of complex catalytic behaviors, an integrated photonic platform allows clean and single flake level photo-catalytic investigations with precisely quantified photocatalytic activities. In this paper, we track fluence-dependent photo-oxidation in two-dimensional Tellurene (2D Te) by the evanescently coupled micro-resonator. Nearly 32 perent of oxidation is achieved in 10 nm 2D Te flake, compared to only 4.5% oxidation in 30 nm sample, probed by the resonance shift in silicon microring resonators (MRRs) substrate. The wider bandgap in the few layers of 2D Te allows faster charge transfer to adsorbed oxygen for a more efficient photocatalytic redox reaction. The photo-oxidation in hybrid 2D Te results in an invariant lineshapes of optical transmission resonance for wavelength trimming (more than 3 times resonance bandwidth). The low threshold power, near-infrared, and in-waveguide resonance trimming scheme is compatible with most integrated photonic setups for easy fixing the nanofabrication-induced random resonance deviation for integrated photonic circuit applications in wavelength-division-multiplexing systems and spin qubits quantum computing.

physics.optics

Active Multi-Object Exploration and Recognition via Tactile Whiskers

Robotic exploration under uncertain environments is challenging when optical information is not available. In this paper, we propose an autonomous solution of exploring an unknown task space based on tactile sensing alone. We first designed a whisker sensor based on MEMS barometer devices. This sensor can acquire contact information by interacting with the environment non-intrusively. This sensor is accompanied by a planning technique to generate exploration trajectories by using mere tactile perception. This technique relies on a hybrid policy for tactile exploration, which includes a proactive informative path planner for object searching, and a reactive Hopf oscillator for contour tracing. Results indicate that the hybrid exploration policy can increase the efficiency of object discovery. Last, scene understanding was facilitated by segmenting objects and classification. A classifier was developed to recognize the object categories based on the geometric features collected by the whisker sensor. Such an approach demonstrates the whisker sensor, together with the tactile intelligence, can provide sufficiently discriminative features to distinguish objects.

cs.RO

Bilayer Quantum Hall States in an n-type Wide Tellurium Quantum Well

Tellurium (Te) is a narrow bandgap semiconductor with a unique chiral crystal structure. The topological nature of electrons in the Te conduction band can be studied by realizing n-type doping using atomic layer deposition (ALD) technique on two-dimensional (2D) Te film. In this work, we fabricated and measured the double-gated n-type Te Hall-bar devices, which can operate as two separate or coupled electron layers controlled by the top gate and back gate. Profound Shubnikov-de Haas (SdH) oscillations are observed in both top and bottom electron layers. Landau level hybridization between two layers, compound and charge-transferable bilayer quantum Hall states at filling factor 4, 6, and 8 are analyzed. Our work opens the door for the study of Weyl physics in coupled bilayer systems of 2D materials.

cond-mat.mes-hall

Quantum Hall Effect of Weyl Fermions in Semiconducting n-type Tellurene

Dirac and Weyl nodal materials can host low-energy relativistic quasiparticles. Under strong magnetic fields, the topological properties of Dirac/Weyl materials can directly manifest through quantum Hall states. However, most Dirac/Weyl nodes generically exist in semimetals without exploitable bandgaps due to their accidental band-crossing origin. Here we report the first experimental observation of Weyl fermions in a semiconductor. Tellurene, the 2D form of tellurium, possesses chiral crystal structure which induces unconventional Weyl nodes with a hedgehog-like radial spin texture near the conduction band edge. We synthesize high-quality n-type tellurene by a hydrothermal method with subsequent dielectric doping and detect a topologically non-trivial pi Berry phase in quantum Hall sequences. Our work expands the spectrum of Weyl matter into semiconductors and offers a new platform to design novel quantum devices by marrying the advantages of topological materials to versatile semiconductors.

cond-mat.mes-hall

Raman Response and Transport Properties of One-Dimensional van der Waals Tellurium Nanowires

Tellurium can form nanowires of helical atomic chains. Given their unique one-dimensional van der Waals structure, these nanowires are expected to show remarkably different physical and electronic properties than bulk tellurium. Here we show that few-chain and single-chain van der Waals tellurium nanowires can be isolated using carbon nanotube and boron nitride nanotube encapsulation. With the approach, the number of atomic chains can be controlled by the inner diameter of the nanotube. The Raman response of the structures suggests that the interaction between a single-atomic tellurium chain and a carbon nanotube is weak, and that the inter-chain interaction becomes stronger as the number of chains increases. Compared with bare tellurium nanowires on SiO2, nanowires encapsulated in boron nitride nanotubes exhibit a dramatically enhanced current-carrying capacity, with a current density of 1.5*10^8 A cm-2, which exceeds that of most semiconducting nanowires. We also use our tellurium nanowires encapsulated in boron nitride nanotubes to create field-effect transistors that have a diameter of only 2 nm.

cond-mat.mes-hall

A Ferroelectric Semiconductor Field-Effect Transistor

Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in non-volatile memory technology, but suffer from short retention times, which limits their wider application. Here we report a ferroelectric semiconductor field-effect transistor in which a two-dimensional ferroelectric semiconductor, indium selenide (α-In2Se3), is used as the channel material in the device. α-In2Se3 was chosen due to its appropriate bandgap, room temperature ferroelectricity, ability to maintain ferroelectricity down to a few atomic layers, and potential for large-area growth. A passivation method based on the atomic-layer deposition of aluminum oxide (Al2O3) was developed to protect and enhance the performance of the transistors. With 15-nm-thick hafnium oxide (HfO2) as a scaled gate dielectric, the resulting devices offer high performance with a large memory window, a high on/off ratio of over 108, a maximum on-current of 862 μA μm-1, and a low supply voltage.

physics.app-ph

Gate-tunable Strong Spin-orbit Interaction in Two-dimensional Tellurium Probed by Weak-antilocalization

Tellurium (Te) has attracted great research interest due to its unique crystal structure since 1970s. However, the conduction band of Te is rarely studied experimentally because of the intrinsic p-type nature of Te crystal. By atomic layer deposited dielectric doping technique, we are able to access the conduction band transport properties of Te in a controlled fashion. In this paper, we report on a systematic study of weak-antilocalization (WAL) effect in n-type two-dimensional (2D) Te films. We find that the WAL agrees well with Iordanskii, Lyanda-Geller, and Pikus (ILP) theory. The gate and temperature dependent WAL reveals that Dyakonov-Perel (DP) mechanism is dominant for spin relaxation and phase relaxation is governed by electron-electron (e-e) interaction. Large phase coherence length near 600nm at T=1K is obtained, together with gate tunable spin-orbit interaction (SOI). Transition from weak-localization (WL) to weak-antilocalization (WAL) depending on gate bias is also observed. These results demonstrate that newly developed solution-based synthesized Te films provide a new controllable strong SOI 2D semiconductor with high potential for spintronic applications.

cond-mat.mes-hall

Room Temperature Electrocaloric Effect in Layered Ferroelectric CuInP2S6 for Solid State Refrigeration

A material with reversible temperature change capability under an external electric field, known as the electrocaloric effect (ECE), has long been considered as a promising solid-state cooling solution. However, electrocaloric (EC) performance of EC materials generally is not sufficiently high for real cooling applications. As a result, exploring EC materials with high performance is of great interest and importance. Here, we report on the ECE of ferroelectric materials with van der Waals layered structure (CuInP2S6 or CIPS in this work in particular). Over 60% polarization charge change is observed within a temperature change of only 10 K at Curie temperature. Large adiabatic temperature change (|ΔT|) of 3.3 K, isothermal entropy change (|ΔS|) of 5.8 J kg-1 K-1 at |ΔE|=142.0 kV cm-1 at 315 K (above and near room temperature) are achieved, with a large EC strength (|ΔT|/|ΔE|) of 29.5 mK cm kV-1. The ECE of CIPS is also investigated theoretically by numerical simulation and a further EC performance projection is provided.

cond-mat.mtrl-sci

Thermoelectric Performance of 2D Tellurium with Accumulation Contacts

Tellurium (Te) is an intrinsically p-type doped narrow bandgap semiconductor with excellent electrical conductivity and low thermal conductivity. Bulk trigonal Te has been theoretically predicted and experimentally demonstrated to be an outstanding thermoelectric material with high value of thermoelectric figure-of-merit ZT. In view of the recent progress in developing synthesis route of two-dimensional (2D) tellurium thin films as well as the growing trend of exploiting nanostructures as thermoelectric devices, here for the first time we report excellent thermoelectric performance of tellurium nanofilms, with room temperature power factor of 31.7 μWcm-1K-2 and ZT value of 0.63. To further enhance the efficiency of harvesting thermoelectric power in nanofilm devices, thermoelectrical current mapping was performed with a laser as a heating source, and we found high work function metals such as palladium can form rare accumulation-type metal-to-semiconductor contacts to 2D Te, which allows thermoelectrically generated carriers to be collected more efficiently. High-performance thermoelectric 2D Te devices have broad applications as energy harvesting devices or nanoscale Peltier coolers in microsystems.

cond-mat.mtrl-sci

Imaging Carrier Inhomogeneities in Ambipolar Tellurene Field Effect Transistors

Developing van der Waals (vdW) homojunction devices requires materials with narrow bandgaps and simultaneously high hole and electron mobilities for bipolar transport, as well as methods to image and study spatial variations in carrier type and associated conductivity with nanometer spatial resolution. Here we demonstrate the general capability of near-field scanning microwave microscopy (SMM) to image and study the local carrier type and associated conductivity in operando by studying ambiploar field effect transistors (FETs) of the 1D vdW material tellurium in 2D form. To quantitatively understand electronic variations across the device, we produce nanometer resolved maps of the local carrier equivalence backgate voltage. We show that the global device conductivity minimum determined from transport measurements does not arise from uniform carrier neutrality, but rather from the continued coexistence of p-type regions at the device edge and n-type regions in the interior of our micron-scale devices. This work both underscores and addresses the need to image and understand spatial variations in the electronic properties of nanoscale devices.

cond-mat.mes-hall

Quantum Transport and Band Structure Evolution under High Magnetic Field in Few-Layer Tellurene

Quantum Hall effect (QHE) is a macroscopic manifestation of quantized states which only occurs in confined two-dimensional electron gas (2DEG) systems. Experimentally, QHE is hosted in high mobility 2DEG with large external magnetic field at low temperature. Two-dimensional van der Waals materials, such as graphene and black phosphorus, are considered interesting material systems to study quantum transport, because it could unveil unique host material properties due to its easy accessibility of monolayer or few-layer thin films at 2D quantum limit. Here for the first time, we report direct observation of QHE in a novel low-dimensional material system: tellurene.High-quality 2D tellurene thin films were acquired from recently reported hydrothermal method with high hole mobility of nearly 3,000 cm2/Vs at low temperatures, which allows the observation of well-developed Shubnikov-de-Haas (SdH) oscillations and QHE. A four-fold degeneracy of Landau levels in SdH oscillations and QHE was revealed. Quantum oscillations were investigated under different gate biases, tilted magnetic fields and various temperatures, and the results manifest the inherent information of the electronic structure of Te. Anomalies in both temperature-dependent oscillation amplitudes and transport characteristics were observed which are ascribed to the interplay between Zeeman effect and spin-orbit coupling as depicted by the density functional theory (DFT) calculations.

cond-mat.mtrl-sci