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Werner Gillijns

Publications and source records attributed to Werner Gillijns.

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Physics-Informed Neural Operator for Warm-Starting Background-Decomposed and Preconditioned PSFD: Enabling Scalable 3-D EUV Mask Simulation

We present a physics-informed neural operator (PINO) trained with pseudo-spectral frequency-domain (PSFD) equations for electromagnetic (EM) scattering problems in EUV lithography. The Fourier neural operator is factorized into a two-dimensional lateral ($xy$) branch and a one-dimensional axial ($z$) branch and is trained self-consistently with background decomposition.Thus, the full-vector coupling between the mask and the multilayer response is retained without invoking a finite-order Born approximation. In this way, the computational domain size is significantly reduced, thereby lowering the computational cost. The PINO is trained on approximately 16,000 mask designs from the LithoBench library sampled randomly at each training iteration without using precomputed EM field solutions. The PINO surrogate model yields predictions with a mean absolute error of about $7 \times 10^{-3}$ for the scattered intensity of held-out mask patterns relative to the reference PSFD solution. Combined with spectral damping, the PINO warm-start initialization accelerates the background-decomposed PSFD solver on finer discretizations.

physics.optics

Pseudo-spectral frequency-domain method with background field decomposition and Green's function preconditioner for electromagnetic scattering problem in EUV lithography

We provide an accelerated computational framework to solve electromagnetic scattering problems in planarly layered media arising from extreme ultraviolet (EUV) lithography. To achieve this, we reformulate the EUV scattering problem into a scattering problem on a homogeneous background, in which the electromagnetic contribution of the layered media is captured by a recursively updated reflection of the layered stack. The system is numerically solved by employing the pseudo-spectral frequency-domain method paired with an iterative solver, whose iterative convergence is expedited by a free-space Green's function preconditioner. The proposed framework is evaluated on EUV mask geometries and multilayer mirror stacks, demonstrating a significant speedup over the conventional pseudo-spectral frequency-domain method.

physics.optics

Transforming Computational Lithography with AC and AI -- Faster, More Accurate, and Energy-efficient

From climate science to drug discovery, scientific computing demands have surged dramatically in recent years -- driven by larger datasets, more sophisticated models, and higher simulation fidelity. This growth rate far outpaces transistor scaling, leading to unsustainably rising costs, energy consumption, and emissions. Semiconductor manufacturing is no exception. Computational lithography -- involving transferring circuitry to silicon in diffraction-limited conditions -- is the largest workload in semiconductor manufacturing. It has also grown exceptionally complex as miniaturization has advanced in the angstrom-era, requiring more accurate modeling, intricate corrections, and broader solution-space exploration. Accelerated computing (AC) offers a solution by dramatically freeing up the compute and power envelope. AI augments these gains by serving as high-fidelity surrogates for compute-intensive steps. Together, they present a sustainable, next-generation computing platform for scientific workloads. This new paradigm needs a fundamental redesign of the software stack. For computational lithography, NVIDIA cuLitho reinvents the core primitives -- diffractive optics, computational geometry, multi-variant optimization, data processing -- to achieve a transformative 57X end-to-end acceleration. Beyond dramatically faster cycles, this expanded compute envelope enables more rigorous solutions, including curvilinear masks, high-numerical aperture extreme ultraviolet (high-NA EUV) lithography, and subatomic modeling. We reinvest a small fraction of the freed-up compute to include through-focus correction for better process resilience. Silicon experiments at IMEC show significant benefits compared to conventional methods -- 35% better process window and 19% better edge placement error. This is the first quantified chip-scale demonstration of the lithography benefits of AC and AI in silicon.

eess.SP