arXiv subjects

Werner Wegscheider

Publications and source records attributed to Werner Wegscheider.

At least 73 records · Page 4Linked to original sources

arXiv2019

Quantum transport in high-quality shallow InSb quantum wells

InSb is one of the promising candidates to realize a topological state through proximity induced superconductivity in a material with strong spin-orbit interactions. In two-dimensional systems, thin barriers are needed to allow strong coupling between superconductors and semiconductors. However, it is still challenging to obtain a high-quality InSb two-dimensional electron gas in quantum wells close to the surface. Here we report on a molecular beam epitaxy grown heterostructure of InSb quantum wells with substrate-side Si-doping and ultra-thin InAlSb (5 nm, 25 nm, and 50 nm) barriers to the surface. We demonstrate that the carrier densities in these quantum wells are gate-tunable and electron mobilities up to 350,000 $\rm{cm^2(Vs)^{-1}}$ are extracted from magneto-transport measurements. Furthermore, from temperature-dependent magneto-resistance measurements, we extract an effective mass of 0.02 $m_0$ and find a Zeeman splitting compatible with the expected g-factor.

cond-mat.mes-hall↗

arXiv2019

Strong photon coupling to the quadrupole moment of an electron in solid state

The implementation of circuit quantum electrodynamics allows coupling distant qubits by microwave photons hosted in on-chip superconducting resonators. Typically, the qubit-photon interaction is realized by coupling the photons to the electric dipole moment of the qubit. A recent proposal suggests storing the quantum information in the electric quadrupole moment of an electron in a triple quantum dot. The qubit is expected to have improved coherence since it is insensitive to dipolar noise produced by distant voltage fluctuators. Here we experimentally realize a quadrupole qubit in a linear array of three quantum dots in a GaAs/AlGaAs heterostructure. A high impedance microwave resonator coupled to the middle dot interacts with the qubit quadrupole moment. We demonstrate strong quadrupole qubit--photon coupling and observe improved coherence properties when operating the qubit in the parameter space where the dipole coupling vanishes.

cond-mat.mes-hall↗

arXiv2019

Gate-tunable Electronic Transport in p-type GaSb Quantum Wells

We investigate two-dimensional hole transport in GaSb quantum wells at cryogenic temperatures using gate-tunable devices. Measurements probing the valence band structure of GaSb unveil a significant spin splitting of the ground subband induced by spin-orbit coupling. We characterize the carrier densities, effective masses and quantum scattering times of these spin-split subbands and find that the results are in agreement with band structure calculations. Additionally, we study the weak anti-localization correction to the conductivity present around zero magnetic field and obtain information on the phase coherence. These results establish GaSb quantum wells as a platform for two-dimensional hole physics and lay the foundations for future experiments in this system.

cond-mat.mes-hall↗

arXiv2019

Nonlinear optics in the fractional quantum Hall regime

Engineering strong interactions between optical photons is a great challenge for quantum science. Envisioned applications range from the realization of photonic gates for quantum information processing to synthesis of photonic quantum materials for investigation of strongly-correlated driven-dissipative systems. Polaritonics, based on the strong coupling of photons to atomic or electronic excitations in an optical resonator, has emerged as a promising approach to implement those tasks. Recent experiments demonstrated the onset of quantum correlations in the exciton-polariton system, showing that strong polariton blockade could be achieved if interactions were an order of magnitude stronger. Here, we report time resolved four-wave mixing experiments on a two-dimensional electron system embedded in an optical cavity, demonstrating that polariton-polariton interactions are strongly enhanced when the electrons are initially in a fractional quantum Hall state. Our experiments indicate that in addition to strong correlations in the electronic ground state, exciton-electron interactions leading to the formation of polaron polaritons play a key role in enhancing the nonlinear optical response. Besides potential applications in realization of strongly interacting photonic systems, our findings suggest that nonlinear optical measurements could provide information about fractional quantum Hall states that is not accessible in linear optical response.

cond-mat.mes-hall↗

arXiv2018

Scanning Gate Microscopy in a Viscous Electron Fluid

We measure transport through a Ga[Al]As heterostructure at temperatures between 0.1 K and 30 K. Increasing the temperature enhances the electron-electron scattering rate and viscous effects in the two-dimensional electron gas arise. To probe this regime we measure so-called vicinity voltages and use a voltage-biased scanning tip to induce a movable local perturbation. We find that the scanning gate images differentiate reliably between the different regimes of electron transport. Our data are in good agreement with recent theories for interacting electron liquids in the ballistic and viscous regimes stimulated by measurements in graphene. However, the range of temperatures and densities where viscous effects are observable in Ga[Al]As are very distinct from the graphene material system.

cond-mat.mes-hall↗

arXiv2018

Phase Slips and Parity Jumps in Quantum Oscillations of Inverted InAs/GaSb Quantum Wells

We present magnetotransport measurements of a strongly hybridized inverted InAs/GaSb double quantum well. We find that the spin-orbit interaction leads to an appreciable spin-splitting of hole-like states, which form distinct Landau levels in a perpendicular magnetic field. The resulting quantum Hall state is governed by a periodic even and odd total filling arising due to the simultaneous occupation of electron-like and hole-like Landau levels of differing degeneracy. Furthermore, oscillatory charge transfer between all involved subbands leads to discrete phase slips in the usual sequential filling of Landau levels, and coincidentally the phase slips are close to $π$. These results shed new insights on the Landau level structure in composite systems and have consequences for interpreting intercepts obtained from index plots, which are routinely employed to investigate the presence of Berry's phase.

cond-mat.mes-hall↗

arXiv2018

Edgeless and Purely Gate-Defined Nanostructures in InAs Quantum Wells

Nanostructures in InAs quantum wells have so far remained outside of the scope of traditional microfabrication techniques based on etching. This is due to parasitic parallel conduction arising from charge carrier accumulation at the physical edges of samples. Here we present a technique which enables the realization of quantum point contacts and quantum dots in two-dimensional electron gases of InAs purely by electrostatic gating. Multiple layers of top gates separated by dielectric layers are employed. Full quantum point contact pinch-off and measurements of Coulomb-blockade diamonds of quantum dots are demonstrated.

cond-mat.mes-hall↗

arXiv2018

Universal nuclear focusing of confined electron spins

For spin-based quantum computation in semiconductors, dephasing of electron spins by a fluctuating background of nuclear spins is a main obstacle. Here we show that this nuclear background can be precisely controlled in generic quantum dots by periodically exciting electron spins. We demonstrate this universal phenomenon in many-electron GaAs/AlGaAs quantum dot ensembles using optical pump-probe spectroscopy. A feedback mechanism between the saturable electron spin polarization and the nuclear system focuses the electron spin precession frequency into discrete spin modes. Employing such control of nuclear spin polarization, the electron spin lifetime within individual dots can surpass the limit of nuclear background fluctuations, thus substantially enhancing the spin coherence time. This opens the door to achieve long electron spin coherence times also in lithographically-defined many-electron systems that can be controlled in shape, size and position.

cond-mat.mes-hall↗

arXiv2018

Microwave photon-mediated interactions between semiconductor qubits

The realization of a coherent interface between distant charge or spin qubits in semiconductor quantum dots is an open challenge for quantum information processing. Here we demonstrate both resonant and non-resonant photon-mediated coherent interactions between double quantum dot charge qubits separated by several tens of micrometers. We present clear spectroscopic evidence of the collective enhancement of the resonant coupling of two qubits. With both qubits detuned from the resonator we observe exchange coupling between the qubits mediated by virtual photons. In both instances pronounced bright and dark states governed by the symmetry of the qubit-field interaction are found. Our observations are in excellent quantitative agreement with master-equation simulations. The extracted two-qubit coupling strengths significantly exceed the linewidths of the combined resonator-qubit system. This indicates that this approach is viable for creating photon-mediated two-qubit gates in quantum dot based systems.

quant-ph↗

arXiv2018

A 2x2 quantum dot array with controllable inter-dot tunnel couplings

The interaction between electrons in arrays of electrostatically defined quantum dots is naturally described by a Fermi-Hubbard Hamiltonian. Moreover, the high degree of tunability of these systems make them a powerful platform to simulate different regimes of the Hubbard model. However, most quantum dot array implementations have been limited to one-dimensional linear arrays. In this letter, we present a square lattice unit cell of 2$\times$2 quantum dots defined electrostatically in a AlGaAs/GaAs heterostructure using a double-layer gate technique. We probe the properties of the array using nearby quantum dots operated as charge sensors. We show that we can deterministically and dynamically control the charge occupation in each quantum dot in the single- to few-electron regime. Additionally, we achieve simultaneous individual control of the nearest-neighbor tunnel couplings over a range 0-40~$μ$eV. Finally, we demonstrate fast ($\sim 1$~$μ$s) single-shot readout of the spin state of electrons in the dots, through spin-to-charge conversion via Pauli spin blockade. These advances pave the way to analog quantum simulations in two dimensions, not previously accessible in quantum dot systems.

cond-mat.mes-hall↗

arXiv2018

Strong interactions between dipolar polaritons

Nonperturbative coupling between cavity photons and excitons leads to formation of hybrid light-matter excitations termed polaritons. In structures where photon absorption leads to creation of excitons with aligned permanent dipoles, the elementary excitations, termed dipolar polaritons, are expected to exhibit enhanced interactions. Here, we report a substantial increase in interaction strength between dipolar polaritons as the size of the dipole is increased by tuning the applied gate voltage. To this end, we use coupled quantum well structures embedded inside a microcavity where coherent electron tunneling between the wells controls the size of the excitonic dipole. Modifications of the interaction strength are characterized by measuring the changes in the reflected intensity of light when polaritons are driven with a resonant laser. Factor of 6.5 increase in the interaction strength to linewidth ratio that we obtain indicates that dipolar polaritons could be used to demonstrate a polariton blockade effect and thereby form the building blocks of many-body states of light.

cond-mat.mes-hall↗

arXiv2017

Cavity-mediated coherent coupling between distant quantum dots

Scalable architectures for quantum information technologies require to selectively couple long-distance qubits while suppressing environmental noise and cross-talk. In semiconductor materials, the coherent coupling of a single spin on a quantum dot to a cavity hosting fermionic modes offers a new solution to this technological challenge. Here, we demonstrate coherent coupling between two spatially separated quantum dots using an electronic cavity design that takes advantage of whispering-gallery modes in a two-dimensional electron gas. The cavity-mediated long-distance coupling effectively minimizes undesirable direct cross-talk between the dots and defines a scalable architecture for all-electronic semiconductor-based quantum information processing.

cond-mat.mes-hall↗

arXiv2017

Anisotropy and suppression of spin--orbit interaction in a GaAs double quantum dot

The spin-flip tunneling rates are measured in GaAs-based double quantum dots by time-resolved charge detection. Such processes occur in the Pauli spin blockade regime with two electrons occupying the double quantum dot. Ways are presented for tuning the spin-flip tunneling rate, which on the one hand gives access to measuring the Rashba and Dresselhaus spin--orbit coefficents. On the other hand they make it possible to turn on and off the effect of SOI with a high on/off-ratio. The tuning is accomplished by choosing the alignment of the tunneling direction with respect to the crystallographic axes, as well as by choosing the orientation of the external magnetic field with respect to the spin--orbit magnetic field. Spin-lifetimes of 10 s are achieved at a tunnel rate close to 1 kHz.

cond-mat.mes-hall↗

arXiv2017

Polaron-Polaritons in the Integer and Fractional Quantum Hall Regimes

Elementary quasi-particles in a two dimensional electron system can be described as exciton-polarons since electron-exciton interactions ensures dressing of excitons by Fermi-sea electron-hole pair excitations. A relevant open question is the modification of this description when the electrons occupy flat-bands and electron-electron interactions become prominent. Here, we perform cavity spectroscopy of a two dimensional electron system in the strong-coupling regime where polariton resonances carry signatures of strongly correlated quantum Hall phases. By measuring the evolution of the polariton splitting under an external magnetic field, we demonstrate the modification of electron-exciton interactions that we associate with phase space filling at integer filling factors and polaron dressing at fractional filling factors. The observed non-linear behavior shows great promise for enhancing polariton-polariton interactions.

cond-mat.mes-hall↗

arXiv2017

Passivation of Edge States in Etched InAs Sidewalls

We investigate different methods of passivating sidewalls of wet etched InAs heterostructures in order to suppress inherent edge conduction that is presumed to occur due to band bending at the surface leading to charge carrier accumulation. Passivation techniques including sulfur, positively charged compensation dopants and plasma enhanced chemical vapor deposition of $\mathrm{SiN}_{\mathrm{x}}$ do not show an improvement. Surprisingly, atomic layer deposition of $\mathrm{Al}_{\mathrm{2}}\mathrm{O}_{\mathrm{3}}$ leads to an increase in edge resistivity of more than an order of magnitude. While the mechanism behind this change is not fully understood, possible reasons are suggested.

cond-mat.mes-hall↗

arXiv2017

Edge transport in InAs and InAs/GaSb quantum wells

We investigate low-temperature transport through single InAs quantum wells and broken-gap InAs/GaSb double quantum wells. Non-local measurements in the regime beyond bulk pinch-off confirm the presence of edge conduction in InAs quantum wells. The edge resistivity of 1-2 $\mathrm{kΩ/μm}$ is of the same order of magnitude as edge resistivities measured in the InAs/GaSb double quantum well system. Measurements in tilted magnetic field suggests an anisotropy of the conducting regions at the edges with a larger extent in the plane of the sample than normal to it. Finger gate samples on both material systems shine light on the length dependence of the edge resistance with the intent to unravel the nature of edge conduction in InAs/GaSb coupled quantum wells.

cond-mat.mes-hall↗

arXiv2017

Lateral p-n Junction in an Inverted InAs/GaSb Double Quantum Well

We present transport measurements on a lateral p-n junction in an inverted InAs/GaSb double quantum well at zero and nonzero perpendicular magnetic fields. At a zero magnetic field, the junction exhibits diodelike behavior in accordance with the presence of a hybridization gap. With an increasing magnetic field, we explore the quantum Hall regime where spin-polarized edge states with the same chirality are either reflected or transmitted at the junction, whereas those of opposite chirality undergo a mixing process, leading to full equilibration along the width of the junction independent of spin. These results lay the foundations for using p-n junctions in InAs/GaSb double quantum wells to probe the transition between the topological quantum spin Hall and quantum Hall states.

cond-mat.mes-hall↗

arXiv2017

Finite shot noise and electron heating at quantized conductance in high-mobility quantum point contacts

We report a precise experimental study on the shot noise of a quantum point contact (QPC) fabricated in a GaAs/AlGaAs based high-mobility two-dimensional electron gas (2DEG). The combination of unprecedented cleanliness and very high measurement accuracy has enabled us to discuss the Fano factor to characterize the shot noise with a precision of 1 %. We observed that the shot noise at zero magnetic field exhibits a slight enhancement exceeding the single particle theoretical prediction, and that it gradually decreases as a perpendicular magnetic field is applied. We also confirmed that this additional noise completely vanishes in the quantum Hall regime. These phenomena can be explained by the electron heating effect near the QPC, which is suppressed with increasing magnetic field.

cond-mat.mes-hall↗