arXiv subjects

Wesley Auker

Publications and source records attributed to Wesley Auker.

4 recordsLinked to original sources

arXiv2026

Molecular Beam Epitaxy of Mn2In2Se5 van der Waals Layers Using Mn Intercalation

The weak van der Waals (vdW) force in layered chalcogenide materials has enabled the growth of ternary chalcogenide layers using unconventional approaches. Here, we report the molecular beam epitaxy (MBE) growth of Mn2In2Se5, a spin glass material with high level of magnetic frustration, through the heterointegration of MnSe on In2Se3. Directly depositing {\alpha}-MnSe on the vdW In2Se3 layers results in Mn intercalation, transforming the In2Se3 layer into Mn2In2Se5. Large growth windows, including substrate temperatures from 250-450 {\deg}C and Se:Mn flux ratio of 1.1-3.1, have been identified for the intercalation process. With an optimized MnSe deposition time, smooth, single-crystalline, and (0001)-oriented Mn2In2Se5 layers with a root-mean-square (RMS) roughness of 1.5 nm can be synthesized. Further extending the MnSe deposition time results in the growth of uniform rock-salt structured {\alpha}-MnSe (111) layers with a thickness of up to 8 nm and a narrow full-width-at-half-maximum (FWHM) of 0.35{\deg} in MnSe (222) XRD rocking curves. This report presents a unique approach for the growths of uniform and single-crystalline Mn2In2Se5 vdW layers using MBE, and potentially opens a pathway for synthesis of ternary vdW chalcogenides by intercalation of new atomic species in binary vdW chalcogenides.

cond-mat.mtrl-sci↗

arXiv2025

Defect-Mediated Phase Engineering of 2D Ag at the Graphene/SiC Interface

Atomically thin silver (Ag) films offer unique opportunities in plasmonic, quantum optics, and energy harvesting, yet conventional growth methods struggle to achieve structural control at the monolayer limit. Here, we demonstrate phase-selective synthesis of large-area, crystalline 2D Ag films via defect-engineered confinement heteroepitaxy (CHet) at the epitaxial graphene/silicon carbide (EG/SiC) interface. By tuning graphene growth and post-growth defect introduction, two distinct Ag phases are achieved with disparate properties: a nearly commensurate Ag(1) lattice stabilized by vacancy and line defects in epitaxial graphene, and a denser Ag(2) phase preferentially grown with sp3-rich zero-layer graphene. Structural and spectroscopic characterization confirm lattice registry with the SiC substrate, while theoretical calculations reveal a thermodynamic preference for Ag(2) but an easier nucleation for Ag(1). Both phases are found to be semiconducting, with the Ag(2) phase exhibiting slightly enhanced n-doping of graphene. Notably, nonlinear optical measurements reveal a three-order magnitude difference in second-order susceptibility between the two phases, demonstrating promise for phase-tunable 2D metals in reconfigurable optoelectronic and metamaterial platforms.

cond-mat.mtrl-sci↗

arXiv2025

Examining the Spin Structure of Altermagnetic Candidate MnTe Grown with Near Ideal Stoichiometry

Altermagnets are a recently-discovered class of materials with magnetic ordering that have a zero net magnetization and a momentum-dependent spin splitting in their band structure, arising from a collinear spin arrangement with alternating polarizations in the crystal lattice. The nickeline-structured manganese telluride ({\alpha}-MnTe) is an attractive altermagnet candidate due to its predicted large spin splitting energy and a transition temperature near 300K. In this work, we present a thorough investigation of the spin structure of {\alpha}-MnTe thin films grown by molecular beam epitaxy with very high crystal quality and low residual magnetization. The epitaxial {\alpha}-MnTe films have a full-width-at-half-maximum of 0.1{\deg} as measured by x-ray-diffraction rocking curves and a root-mean-square roughness below 1 nm. Neutron diffraction measurements confirm the antiferromagnetic order in the {\alpha}-MnTe film and show a N\'eel temperature of 307 K. Polarized neutron reflectometry detects a vanishingly small net magnetization which may be confined to the MnTe/InP interface, highlighting the near-ideal stoichiometry in the sample. In vacuo angle resolved photoemission spectroscopy reveals that the bulk band spectrum of the MnTe films is consistent with the weak altermagnetic order as theoretically predicted and observed for the high symmetry nodal plane in the center of the Brillouin zone. This study establishes optimized growth conditions for the synthesis of stoichiometric {\alpha}-MnTe thin films which exhibit exceptional structural and magnetic ordering, thereby providing a robust platform for the precise characterization of their altermagnetic properties.

cond-mat.mtrl-sci↗

arXiv2024

Growth Conditions and Interfacial Misfit Array in SnTe (111) films Grown on InP (111)A Substrates by Molecular Beam Epitaxy

Tin telluride (SnTe) is an IV-VI semiconductor with a topological crystalline insulator band structure, high thermoelectric performance, and in-plane ferroelectricity. Despite its many applications, there has been little work focused on understanding the growth mechanisms of SnTe thin films. In this manuscript, we investigate the molecular beam epitaxy (MBE) synthesis of SnTe (111) thin films on InP (111)A substrates. We explore the effect of substrate temperature, Te:Sn flux ratio, and growth rate on the film quality. Using a substrate temperature of 340 {\deg}C, a Te:Sn flux ratio of 3, and a growth rate of 0.48 {\AA}/s, fully coalesced and single crystalline SnTe (111) epitaxial layers with x-ray rocking curve full-width-at-half-maxima (FWHM) of 0.09{\deg} and root-mean-square surface roughness as low as 0.2 nm have been obtained. Despite the 7.5% lattice mismatch between the SnTe (111) film and the InP (111)A substrate, reciprocal space mapping indicates that the 15 nm SnTe layer is fully relaxed. We show that a periodic interfacial misfit (IMF) dislocation array forms at the SnTe/InP heterointerface, where each IMF dislocation is separated by 14 InP lattice sites/13 SnTe lattice sites, providing rapid strain relaxation and yielding the high quality SnTe layer. This is the first report of an IMF array forming in a rock-salt on zinc-blende material system and at an IV-VI on III-V heterointerface, and highlights the potential for SnTe as a buffer layer for epitaxial telluride film growth. This work represents an important milestone in enabling the heterointegration between IV-VI and III-V semiconductors to create multifunctional devices.

cond-mat.mtrl-sci↗