arXiv subjects

Willem L. Vos

Publications and source records attributed to Willem L. Vos.

81 records · Page 5Linked to original sources

arXiv2008

Kerr and free-carrier ultrafast all-optical switching of GaAs/AlAs nanostructures near the three-photon edge of GaAs

We performed non-degenerate pump-probe experiments on a GaAs/AlAs photonic structure. We switched the photonic properties using the optical Kerr effect and free carriers excited by three photon absorption. From these measurements we extracted the non-degenerate Kerr coefficients over a broad wavelength range and we extracted the three photon absorption coefficient for GaAs at three wavelengths in the near infrared. We show that the optical Kerr effect is large enough to switch a cavity resonance with a high \emph{Q} ($Q>1000$) photonic cavity.

physics.optics↗

arXiv2007

All-optical octave-broad ultrafast switching of Si woodpile photonic band gap crystals

We present ultrafast all-optical switching measurements of Si woodpile photonic band gap crystals. The crystals are spatially homogeneously excited, and probed by measuring reflectivity over an octave in frequency (including the telecom range) as a function of time. After 300 fs, the complete stop band has shifted to higher frequencies as a result of optically excited free carriers. The switched state relaxes quickly with a time constant of 18 ps. We present a quantitative analysis of switched spectra with theory for finite photonic crystals. The induced changes in refractive index are well described by a Drude model with a carrier relaxation time of 10 fs. We briefly discuss possible applications of high-repetition rate switching of photonic crystal cavities.

physics.optics↗

arXiv2007

Ultrafast optical switching of three-dimensional Si inverse opal photonic band gap crystals

We present ultrafast optical switching experiments on 3D photonic band gap crystals. Switching the Si inverse opal is achieved by optically exciting free carriers by a two-photon process. We probe reflectivity in the frequency range of second order Bragg diffraction where the photonic band gap is predicted. We find good experimental switching conditions for free-carrier plasma frequencies between 0.3 and 0.7 times the optical frequency: we thus observe a large frequency shift of up to D omega/omega= 1.5% of all spectral features including the peak that corresponds to the photonic band gap. We deduce a corresponding large refractive index change of Dn'_Si/n'_Si= 2.0% and an induced absorption length that is longer than the sample thickness. We observe a fast decay time of 21 ps, which implies that switching could potentially be repeated at GHz rates. Such a high switching rate is relevant to future switching and modulation applications.

physics.optics↗

arXiv2007

Dynamical ultrafast all-optical switching of planar GaAs/AlAs photonic microcavities

The authors study the ultrafast switching-on and -off of planar GaAs/AlAs microcavities. Up to 0.8% refractive index changes are achieved by optically exciting free carriers at 1720 nm and a pulse energy of 1.8 micro Joules. The cavity resonance is dynamically tracked by measuring reflectivity versus time delay with tunable laser pulses, and is found to shift by as much as 3.3 linewidths within a few picoseconds. The switching-off occurs with a decay time of around 50 ps. The authors derive the dynamic behavior of the carrier density and of the complex refractive index. They propose that the inferred 10 GHz switching rate may be tenfold improved by optimized sample growth.

physics.optics↗

arXiv2007

Tuning Spontaneous Emission versus Forster Energy Transfer in Biological Systems by Manipulating the Density of Photonic States

We theoretically discuss how to tune the competition between Forster transfer and spontaneous emission in a continuous and nondestructive fashion. The proposed approach is especially suitable for delicate biological systems like light harvesting complexes and fluorescent protein oligomers. We demonstrate that the manipulation of the density of photonic states at the emission frequency of the energy donor results in a change of the quantum efficiencies of the competing energy transfer and spontaneous emission processes. This change will be manifested in a modification of the donor and acceptor emission intensities. Thus, by controlling the local density of photonic states Forster coupled systems can be manipulated and analyzed without the need to physically separate donor and acceptor chromophores for individual analysis, which is of interest, for example, for oligomeric reef coral fluorescent proteins.

physics.chem-ph↗

arXiv2007

Strongly nonexponential time-resolved fluorescence of quantum-dot ensembles in three-dimensional photonic crystals

We observe experimentally that ensembles of quantum dots in three-dimensional (3D) photonic crystals reveal strongly nonexponential time-resolved emission. These complex emission decay curves are analyzed with a continuous distribution of decay rates. The log-normal distribution describes the decays well for all studied lattice parameters. The distribution width is identified with variations of the radiative emission rates of quantum dots with various positions and dipole orientations in the unit cell. We find a striking sixfold change of the width of the distribution by varying the lattice parameter. This interpretation qualitatively agrees with the calculations of the 3D projected local density of states. We therefore conclude that fluorescence decay of ensembles of quantum dots is highly nonexponential to an extent that is controlled by photonic crystals.

physics.optics↗

arXiv2005

Optical extinction due to intrinsic structural variations of photonic crystals

Unavoidable variations in size and position of the building blocks of photonic crystals cause light scattering and extinction of coherent beams. We present a new model for both 2 and 3-dimensional photonic crystals that relates the extinction length to the magnitude of the variations. The predicted lengths agree well with our new experiments on high-quality opals and inverse opals, and with literature data analyzed by us. As a result, control over photons is limited to distances up to 50 lattice parameters ($\sim 15 μ$m) in state-of-the-art structures, thereby impeding large-scale applications such as integrated circuits. Conversely, scattering in photonic crystals may lead to novel physics such as Anderson localization and non-classical diffusion.

physics.optics↗

arXiv2005

Quantitative analysis of directional spontaneous emission spectra from light sources in photonic crystals

We have performed angle-resolved measurements of spontaneous-emission spectra from laser dyes and quantum dots in opal and inverse opal photonic crystals. Pronounced directional dependencies of the emission spectra are observed: angular ranges of strongly reduced emission adjoin with angular ranges of enhanced emission. It appears that emission from embedded light sources is affected both by the periodicity and by the structural imperfections of the crystals: the photons are Bragg diffracted by lattice planes and scattered by unavoidable structural disorder. Using a model comprising diffuse light transport and photonic band structure, we quantitatively explain the directional emission spectra. This provides detailed understanding of the transport of spontaneously emitted light in real photonic crystals, which is essential in the interpretation of quantum-optics in photonic band-gap crystals and for applications wherein directional emission and total emission power are controlled.

physics.pop-ph↗

arXiv2004

Spatial homogeneity of optically switched semiconductor photonic crystals and of bulk semiconductors

This paper discusses free carrier generation by pulsed laser fields as a mechanism to switch the optical properties of semiconductor photonic crystals and bulk semiconductors on an ultrafast time scale. Requirements are set for the switching magnitude, the time-scale, the induced absorption as well as the spatial homogeneity, in particular for silicon at lambda= 1550 nm. Using a nonlinear absorption model, we calculate carrier depth profiles and define a homogeneity length l_hom. Homogeneity length contours are visualized in a plane spanned by the linear and two-photon absorption coefficients. Such a generalized homogeneity plot allows us to find optimum switching conditions at pump frequencies near v/c= 5000 cm^{-1} (lambda= 2000 nm). We discuss the effect of scattering in photonic crystals on the homogeneity. We experimentally demonstrate a 10% refractive index switch in bulk silicon within 230 fs with a lateral homogeneity of more than 30 micrometers. Our results are relevant for switching of modulators in absence of photonic crystals.

physics.optics↗