arXiv subjects

William Strickland

Publications and source records attributed to William Strickland.

4 recordsLinked to original sources

arXiv2025

Enhanced superconducting diode effect in hybrid Josephson junctions

The superconducting diode effect (SDE) has recently been observed in various systems, sparking interest in novel superconducting devices and offering a new platform to probe intrinsic material properties. Josephson junctions with strong Rashba spin-orbit coupling have exhibited nonreciprocal critical currents under applied magnetic fields. In this work, we investigate the SDE in Josephson junctions incorporating periodic hole arrays patterned into the superconducting leads on InAs heterostructures with epitaxial aluminum. We observe an enhanced diode effect when a top gate depletes the 2DEG in the region of the hole arrays, while preserving the overall supercurrent. Theoretical analysis shows that the physics behind this phenomenon is the increased difference of transparency between different bands in the junction. These results highlight a new pathway for engineering and controlling nonreciprocal superconducting transport in hybrid systems.

cond-mat.mes-hall↗

arXiv2025

Gate tunable enhancement of supercurrent in hybrid planar Josephson junctions

Planar Josephson junctions (JJs) have emerged as a promising platform for the realization of topological superconductivity and Majorana zero modes. To obtain robust quasi one-dimensional (1D) topological superconducting states using planar JJs, limiting the number of 1D Andreev bound states' subbands that can be present, and increasing the size of the topological superconducting gap, are two fundamental challenges. It has been suggested that both problems can be addressed by properly designing the interfaces between the JJ's normal region and the superconducting leads. We fabricated Josephson junctions with periodic hole structures on the superconducting contact leads on InAs heterostructures with epitaxial superconducting Al. By depleting the chemical potential inside the hole region with a top gate, we observed an enhancement of the supercurrent across the junction. Such an enhancement is reproduced in theoretical simulations. The theoretical analysis shows that the enhancement of the JJ's critical current is achieved when the hole depletion is such to optimize the matching of quasiparticles' wave-function at the normal/superconductor interface. These results show how the combination of carefully designed patterns for the Al coverage, and external gates, can be successfully used to tune the density and wave functions' profiles in the normal region of the JJ, and therefore open a new avenue to tune some of the critical properties, such as number of subbands and size of the topological gap, that must be optimized to obtain robust quasi 1D superconducting states supporting Majorana bound states.

cond-mat.mes-hall↗

arXiv2024

Superconducting Diode Effect Sign Change in Epitaxial Al-InAs Josepshon Junctions

There has recently been a surge of interest in studying the superconducting diode effect (SDE) partly due to the possibility of uncovering the intrinsic properties of a material system. A change of sign of the SDE at finite magnetic field has previously been attributed to different mechanisms. Here, we observe the SDE in epitaxial Al-InAs Josephson junctions with strong Rashba spin-orbit coupling (SOC). We show that this effect strongly depends on the orientation of the in-plane magnetic field. In the presence of a strong magnetic field, we observe a change of sign in the SDE. Simulation and measurement of supercurrent suggest that depending on the superconducting widths, $W_\text{S}$, this sign change may not necessarily be related to 0--$π$ or topological transitions. We find that the strongest sign change in junctions with narrow $W_\text{S}$ is consistent with SOC-induced asymmetry of the critical current under magnetic-field inversion, while in wider $W_\text{S}$, the sign reversal could be related to 0--$π$ transitions and topological superconductivity.

cond-mat.mes-hall↗

arXiv2022

Induced superconducting pairing in integer quantum Hall edge states

Indium Arsenide (InAs) near surface quantum wells (QWs) are promising for the fabrication of semiconductor-superconductor heterostructures given that they allow for a strong hybridization between the two-dimensional states in the quantum well and the ones in the superconductor. In this work we present results for InAs QWs in the quantum Hall regime placed in proximity of superconducting NbTiN. We observe a negative downstream resistance with a corresponding reduction of Hall (upstream) resistance, consistent with a very high Andreev conversion. We analyze the experimental data using the Landauer-Büttiker formalism, generalized to allow for Andreev reflection processes. We attribute the high efficiency of Andreev conversion in our devices to the large transparency of the InAs/NbTiN interface and the consequent strong hybridization of the QH edge modes with the states in the superconductor.

cond-mat.mes-hall↗