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William W. Roberts

Publications and source records attributed to William W. Roberts.

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Towards a monolithic platform for coupling superconducting circuits to low-loss microwave phonons in AlScN on 4H-SiC

Hybrid superconducting-phonon quantum processing is promising for cavity QED, measurement-based quantum computing, and other quantum applications. Relative to microwave photons at the same frequency, phonons can provide ultra-compact footprints, extremely low losses, and greater connectivity. Phonons can also couple strongly to superconducting circuits through the piezoelectric effect. However, this promise rests on scalable platforms that achieve these benefits without degrading superconducting circuit performance. This motivates a monolithic platform combining low phononic loss, strong electromechanical coupling, and superconducting-circuit compatibility without requiring suspended phononics. Here, we characterize a monolithic quantum acoustic platform combining aluminum superconducting circuits on exposed silicon carbide (SiC) with piezoelectric aluminum scandium nitride (AlScN) on SiC for integrated phononics. This architecture is enabled by selective removal of AlScN from selected chip regions, allowing aluminum superconducting microwave resonators to be fabricated directly on the SiC while preserving adjacent AlScN-on-SiC regions for phonon transduction. The resulting Al-on-SiC resonators exhibit a coherent lifetime of 2.9 μs, demonstrating compatibility with aluminum superconducting quantum devices. In parallel, cryogenic surface acoustic delay-line measurements on the retained AlScN-on-SiC regions show low phononic propagation loss at 4.05 GHz, corresponding to an estimated phonon lifetime of 7.6 μs. Together with a previously demonstrated electromechanical coupling coefficient of about 4.3% and a theoretical upper bound of 8%, these results establish Al-on-SiC/AlScN-on-SiC as a promising monolithic platform for integrating superconducting microwave circuits with piezoelectric phononic components for quantum acoustic networking and hybrid quantum systems.

quant-ph

Exact Solutions to Acoustoelectric Interactions in Arbitrary Geometries

Acoustoelectric interactions occur when free carriers in a semiconductor interact with the fields of an acoustic wave in a piezoelectric medium. These interactions can amplify acoustic waves, as well as give rise to extremely large phononic nonlinearities and strong non-reciprocal effects. The field of acoustoelectric devices is currently dependent on analytical and perturbative solutions for the two simplest arrangements of piezoelectric-semiconductor materials. While these canonical models have allowed the field to advance substantially, new geometries are arising that do not satisfy assumptions integral to these models. These assumptions include the treatment of the interactions between the acoustic fields and free carriers as weak, the neglect of the tensorial nature of the material properties, the omission of the spatial variations in the phonons' electric field profiles, and the disregard of elastic coupling across material boundaries, among others. We develop, for the first time, a finite element method (FEM) model to solve for acoustoelectric interactions in arbitrary geometries that avoids making the assumptions of the canonical models. We verify the FEM model using results for amplification, dispersion, and non-reciprocity obtained from the canonical models in their regime of validity. We then examine the acoustoelectric effect in two geometries not covered by the canonical models: a thin piezoelectric film placed on a semiconductor substrate and a fully 2D waveguide under a thin semiconductor layer. This work lays the foundation for accurate modeling of arbitrary acoustoelectric geometries such as those currently being developed for all-acoustic radio frequency (RF) signal processing, acoustoelectrically enhanced photonic devices, and quantum acoustoelectric devices.

physics.app-ph