arXiv subjects

Wilson J. Yanez-Parreno

Publications and source records attributed to Wilson J. Yanez-Parreno.

2 recordsLinked to original sources

arXiv2026

Efficiently gate-tunable ferromagnetism in ferromagnetic semiconductor-Dirac semimetal p-n heterojunctions

We use molecular beam epitaxy to develop a gate tunable p-n heterojunction that interfaces a canonical Dirac semimetal, Cd$_3$As$_2$, and a ferromagnetic semiconductor, In$_{1-x}$Mn$_x$As, with perpendicular magnetic anisotropy. Measurements of the anomalous Hall effect in top-gated Cd$_3$As$_2$/In$_{1-x}$Mn$_x$As devices show that the ferromagnetic Curie temperature ($T_\mathrm{C}$) can be efficiently tuned using a modest gate voltage of $\sim 10$ V, corresponding to a sensitivity to electric field ($E$) of $ΔT_{\mathrm{C}}/ΔE \sim 10$ K/MV/cm). The voltage tuning of $T_\mathrm{C}$ saturates near the charge neutrality point of Cd$_3$As$_2$ and vanishes at positive gate voltage in appropriately designed heterostructures. This non-monotonic behavior cannot be explained solely by hole-mediated ferromagnetism in the In$_{1-x}$Mn$_x$As alone, suggesting an interaction between the Dirac semimetal and the ferromagnetic semiconductor. Our results identify Cd$_3$As$_2$/In$_{1-x}$Mn$_x$As heterojunctions as a potentially attractive platform for studying emergent phenomena arising from the interplay between broken symmetry, topology, and magnetism in a topological semimetal.

cond-mat.mes-hall↗

arXiv2025

Altermagnetic band splitting in 10 nm epitaxial CrSb thin films

Altermagnets are a newly identified family of collinear antiferromagnets with momentum-dependent spin-split band structure of non-relativistic origin, derived from spin-group symmetry-protected crystal structures. Among candidate altermagnets, CrSb is attractive for potential applications because of a large spin-splitting near the Fermi level and a high Neel transition temperature of around 700 K. We use molecular beam epitaxy to synthesize CrSb (0001) thin films with thicknesses ranging from 10 nm to 100 nm. Structural characterization, using reflection high energy electron diffraction, scanning transmission electron microscopy, and X-ray diffraction, demonstrates the growth of epitaxial films with good crystallinity. Polarized neutron reflectometry shows the absence of any net magnetization, consistent with antiferromagnetic order. In vacuo angle resolved photoemission spectroscopy (ARPES) measurements probe the band structure in a previously unexplored regime of film thickness, down to 10 nm. These ARPES measurements show a three-dimensional momentum-dependent band splitting of up to 0.7 eV with g-wave symmetry, consistent with that seen in prior studies of bulk single crystals. The distinct altermagnetic band structure required for potential spin-transport applications survives down to the 10 nm thin film limit at room temperature.

cond-mat.mtrl-sci↗