arXiv subjects

Winfried Karl Hensinger

Publications and source records attributed to Winfried Karl Hensinger.

4 recordsLinked to original sources

arXiv2026

Ablation Removal of Transport-Blocking Defects in Surface-Electrode Ion Traps

We demonstrate in situ removal of a transport-blocking defect on a surface-electrode ion trap device using a Q-switched Nd:YAG 532 nm pulsed ablation laser. This approach eliminates the need to vent and rebake the vacuum system, providing a low-overhead defect-remediation technique well suited for ion-shuttling architectures where system modifications typically incur substantial downtime - particularly in shuttling focussed experiments operating at temperatures that necessitate bakes. Additionally, the hardware used is readily available in many ion trap laboratories, making this solution attractive to experiments operating in such regimes. Following ablation, we observe near-unity shuttling success rates across the previously obstructed region and measure micromotion levels that remain within acceptable limits. This technique enables rapid, reliable restoration of transport pathways without interruption to experimental operation.

quant-ph↗

arXiv2025

In-vacuum surface flashover of SiN, AlN, and etched SiO2 thin films at micrometre scales

We investigate the surface flashover voltage threshold for SiO$_2$, SiN, and AlN thin films over micrometre scale lengths. Furthermore, we test the effects of different etching chemistries on SiO$_2$ layers. We find that there is little significant difference between untreated SiO$_2$ samples and those that have been etched with hydrogen fluoride or Transene AlPad Etch 639. SiN and AlN samples performed significantly better than all SiO$_2$ samples giving a 45% increase in surface flashover voltage at a distance of 5 $μ$m with the difference increasing with electrode spacing.

cond-mat.mtrl-sci↗

arXiv2025

Fast-response low power atomic oven for integration into an ion microchip

We present a novel microfabricated neutral atom source for quantum technologies that can be easily integrated onto microchip devices using well-established MEMS fabrication techniques, and contrast this to conventional off-chip ion loading mechanisms. The heating filament of the device is shown to be as small as 90$\times$90 $μ$m$^2$. Testing of the $^{171}$Yb fluorescence response is found to be in the low tens of milliseconds, two orders of magnitude faster compared to previous literature at a power of milliwatts making it desirable for low-power device packages. We demonstrate how the evaporation material can be capped in vacuum to work with materials such as Ba that oxidise easily in air, which can avoid the need for ablation lasers in the loading process. We calculate oven lifetimes to be over 10 years of continuous use for commonly used ion species in quantum technology.

physics.app-ph↗

arXiv2020

Engineering of Microfabricated Ion Traps and Integration of Advanced On-Chip Features

Trapped atomic ions are a proven and powerful tool for the fundamental research of quantum physics. They have emerged in recent years as one of the most promising candidates for several practical technologies including quantum computers, quantum simulators, atomic clocks, mass spectrometers and quantum sensors. Advanced fabrication techniques, taken from established and nascent disciplines, are being deployed to create novel, reliable devices with a view to large scale integration and commercial compatibility. This review will cover the fundamentals of ion trapping before proceeding with a discussion of the design of ion traps for the aforementioned applications. We will analyse current microfabrication techniques that are being utilised, as well as various considerations which motivate the choice of materials and processes. Finally, we discuss current efforts to include advanced, on-chip features into next generation ion traps.

physics.app-ph↗