arXiv subjects

Witold Skowroński

Publications and source records attributed to Witold Skowroński.

33 records · Page 2Linked to original sources

arXiv2019

Spin Hall Magnetoresistance in Metallic Bilayers with In-plane Magnetized Ferromagnets

We revisit the theory and experiment on spin Hall magnetoresistance (SMR) in bilayers consisting of a heavy metal (H) coupled to in-plane magnetized ferromagnetic metal (F), and determine contributions to the magnetoresistance due to SMR and anisotropic magnetoresistance (AMR) in four different bilayer systems: W/$\text{Co}_{20}\text{Fe}_{60}\text{B}_{20}$, W/Co, $\text{Co}_{20}\text{Fe}_{60}\text{B}_{20}$/Pt, and Co/Pt. To do this, the AMR is explicitly included in the diffusion transport equations in the ferromagnet. The results allow precise determination of different contributions to the magnetoresistance, which can play an important role in optimizing prospective magnetic stray field sensors. They also may be useful in the determination of spin transport properties of metallic magnetic heterostructures in other experiments based on magnetoresistance measurements.

physics.app-ph↗

arXiv2019

Multi-bit MRAM storage cells utilizing serially connected perpendicular magnetic tunnel junctions

Serial connection of multiple memory cells using perpendicular magnetic tunnel junctions (pMTJ) is proposed as a way to increase magnetic random access memory (MRAM) storage density. Multi-bit storage element is designed using pMTJs fabricated on a single wafer stack, with a serial connections realized using top-to-bottom vias. Tunneling magnetoreistance effect above 130%, current induced magnetization switching in zero external magnetic field and stability diagram analysis of single, two-bit and three-bit cells are presented together with thermal stability. The proposed design is easy to manufacture and can lead to increase capacity of future MRAM devices.

physics.app-ph↗

arXiv2019

Field-free spin-orbit torque switching in Co/Pt/Co multilayer with mixed magnetic anisotropies

Spin-orbit-torque (SOT) induced magnetization switching in Co/Pt/Co trilayer, with two Co layers exhibiting magnetization easy axes orthogonal to each other is investigated. Pt layer is used as a source of spin-polarized current as it is characterized by relatively high spin-orbit coupling. The spin Hall angle of Pt, $θ= 0.08$ is quantitatively determined using spin-orbit torque ferromagnetic resonance technique. In addition, Pt serves as a spacer between two Co layers and depending on it's thickness, different interlayer exchange coupling (IEC) energy between ferromagnets is induced. Intermediate IEC energies, resulting in a top Co magnetization tilted from the perpendicular direction, allows for SOT-induced feld-free switching of the top Co layer. The switching process is discussed in more detail, showing the potential of the system for neuromorphic applications.

physics.app-ph↗

arXiv2018

Determination of spin Hall angle in heavy metal/CoFeB-based heterostructures with interfacial spin-orbit fields

Magnetization dynamics in W/CoFeB, CoFeB/Pt and W/CoFeB/Pt multilayers was investigated using spin-orbit-torque ferromagnetic resonance (SOT-FMR) technique. An analytical model based on magnetization dynamics due to SOT was used to fit heavy metal (HM) thickness dependence of symmetric and antisymmetric components of the SOT-FMR signal. The analysis resulted in a determination of the properties of HM layers, such as spin Hall angle and spin diffusion length. The spin Hall angle of -0.36 and 0.09 has been found in the W/CoFeB and CoFeB/Pt bilayers, respectively, which add up in the case of W/CoFeB/Pt trilayer. More importantly, we have determined effective interfacial spin-orbit fields at both W/CoFeB and CoFeB/Pt interfaces, which are shown to cancel Oersted field for particular thicknesses of the heavy metal layers, leading to pure spin-current-induced dynamics and indicating the possibility for a more efficient magnetization switching.

physics.app-ph↗

arXiv2017

Biaxial magnetic field setup for angular magnetic measurements of thin films and spintronic nanodevices

The biaxial magnetic-field setup for angular magnetic measurements of thin film and spintronic devices is designed and presented. The setup allows for application of the in-plane magnetic field using a quadrupole electromagnet, controlled by power supply units and integrated with an electromagnet biaxial magnetic field sensor. In addition, the probe station is equipped with a microwave circuitry, which enables angle-resolved spin torque oscillation measurements. The angular dependencies of magnetoresistance and spin diode effect in a giant magnetoresistance strip are shown as an operational verification of the experimental setup. We adapted an analytical macrospin model to reproduce both the resistance and spin-diode angular dependency measurements.

physics.app-ph↗

arXiv2017

Understanding stability diagram of perpendicular magnetic tunnel junctions

Perpendicular magnetic tunnel junctions (MTJ) with a bottom pinned reference layer and a composite free layer (FL) are investigated. Different thicknesses of the FL were tested to obtain an optimal balance between tunneling magnetoresistance (TMR) ratio and perpendicular magnetic anisotropy. After annealing at 400 $^\circ$C, the TMR ratio for 1.5 nm thick CoFeB sublayer reached 180 % at room temperature and 280 % at 20 K with an MgO tunnel barrier thickness corresponding to the resistance area product RA = 10 Ohm$\mathrmμ$m$^2$. The voltage vs. magnetic field stability diagrams measured in pillar-shaped MTJs with 130 nm diameter indicate the competition between spin transfer torque (STT), voltage controlled magnetic anisotropy (VCMA) and temperature effects in the switching process. An extended stability phase diagram model that takes into account all three parameters and the effective damping measured independently using broadband ferromagnetic resonance technique enabled the determination of both STT and VCMA coefficients that are responsible for the FL magnetization switching.

cond-mat.mtrl-sci↗

arXiv2016

Electric-field tunable spin diode FMR in patterned PMN-PT/NiFe structures

Dynamic properties of NiFe thin films on PMN-PT piezoelectric substrate are investigated using the spin-diode method. Ferromagnetic resonance (FMR) spectra of microstrips with varying width are measured as a function of magnetic field and frequency. The FMR frequency is shown to depend on the electric field applied across the substrate, which induces strain in the NiFe layer. Electric field tunability of up to 100 MHz per 1 kV/cm is achieved. An analytical model based on total energy minimization and the LLG equation, with magnetostriction effect taken into account, is developed to explain the measured dynamics. Based on this model, conditions for strong electric-field tunable spin diode FMR in patterned NiFe/PMN-PT structures are derived.

cond-mat.mtrl-sci↗

arXiv2015

Buffer influence on magnetic dead layer, critical current and thermal stability in magnetic tunnel junctions with perpendicular magnetic anisotropy

We present a thorough research on Ta/Ru-based buffers and their influence on features crucial from the point of view of applications of MTJs, such as critical switching current and thermal stability. We investigate devices consisting of buffer/FeCoB/MgO/FeCoB/Ta/Ru multilayers for three different buffers: Ta 5 / Ru 10 / Ta 3, Ta 5 / Ru 10 / Ta 10 and Ta 5 / Ru 20 / Ta 5 (all thicknesses in nm). In addition, we study systems with a single FeCoB layer deposited above as well as below the MgO barrier. The crystallographic texture and the roughness of the buffers are determined by means of XRD and atomic force microscopy measurements. Furthermore, we examine the magnetic domain pattern, the magnetic dead layer thickness and the perpendicular magnetic anisotropy fields for each sample. Finally, we investigate the effect of the current induced magnetization switching for nanopillar junctions with lateral dimensions ranging from 1 μm down to 140 nm. Buffer Ta 5 / Ru 10 / Ta 3, which has the thickest dead layer, exhibits a large increase in the thermal stability factor while featuring a slightly lower critical current density value when compared to the buffer with the thinnest dead layer Ta 5 / Ru 20 / Ta 5.

cond-mat.mes-hall↗

arXiv2014

Towards wafer scale inductive characterization of spin transfer torque critical current density of magnetic tunnel junction stacks

We explore the prospects of wafer scale inductive probing of the critical current density $j^{c0}$ for spin transfer torque switching of a CoFeB/MgO/CoFeB magnetic tunnel junction with varying MgO thickness. From inductive measurements magnetostatic parameters and the effective damping are derived and $j^{c0}$ is calculated based on spin transfer torque equations. The inductive values compare well to the values derived from current induced switching measurements on individual nanopillars. Using a wafer scale inductive probe head could in the future enable wafer probe station based metrology of $j^{c0}$.

cond-mat.mtrl-sci↗

arXiv2014

Rectification of radio frequency current in giant magnetoresistance spin valve

We report on a highly efficient spin diode effect in an exchange-biased spin-valve giant magnetoresistance (GMR) strips. In such multilayer structures, symmetry of the current distribution along the vertical direction is broken and, as a result, a non-compensated Oersted field acting on the magnetic free layer appears. This field, in turn, is a driving force of magnetization precessions. Due to the GMR effect, resistance of the strip oscillates following the magnetization dynamics. This leads to rectification of the applied radio frequency current and induces a direct current voltage $V_{DC}$. We present a theoretical description of this phenomenon and calculate the spin diode signal, $V_{DC}$, as a function of frequency, external magnetic field, and angle at which the external field is applied. A satisfactory quantitative agreement between theoretical predictions and experimental data has been achieved. Finally, we show that the spin diode signal in GMR devices is significantly stronger than in the anisotropic magnetoresistance permalloy-based devices.

cond-mat.mtrl-sci↗

arXiv2014

Spin-torque diode radio-frequency detector with voltage tuned resonance

We report on a voltage tunable radio-frequency (RF) detector based on a magnetic tunnel junction (MTJ). The spin-torque diode effect is used to excite and/or detect RF oscillations in the magnetic free layer of the MTJ. In order to reduce the overall in-plane magnetic anisotropy of the free layer, we take advantage of the perpendicular magnetic anisotropy at the interface between ferromagnetic and insulating layers. The applied bias voltage is shown to have a significant influence on the magnetic anisotropy, and thus on the resonance frequency of the device. This influence also depends on the voltage polarity. The obtained results are accounted for in terms of the interplay of spin-transfer-torque and voltage-controlled magnetic anisotropy effects.

cond-mat.mes-hall↗

arXiv2013

Backhopping effect in magnetic tunnel junctions: comparison between theory and experiment

We report on the magnetic switching and backhopping effects due to spin-transfer-torque in magnetic tunnel junctions. Experimental data on the current-induced switching in junctions with MgO tunnel barrier reveal a random back-and-forth switching between the magnetization states, which appears when the current direction favors the parallel magnetic configuration. The effect depends on the barrier thickness $t_b$, and is not observed in tunnel junctions with very thin MgO tunnel barriers, $t_b$ $<$ 0.95 nm. Switching dependence on the bias voltage and barrier thickness is explained in terms of the macrospin model, with the magnetization dynamics described by the modified Landau-Lifshitz-Gilbert equation. Numerical simulations indicate that the competition between in-plane and out-of-plane torque components can result at high bias voltages in a non-deterministic switching behavior, in agreement with experimental observations. When the barrier thickness is reduced, the overall coupling between the magnetic layers across the barrier becomes ferromagnetic, which suppresses the backhopping effect.

cond-mat.mtrl-sci↗

arXiv2013

Influence of MgO tunnel barrier thickness on spin-transfer ferromagnetic resonance and torque in magnetic tunnel junctions

Spin-transfer ferromagnetic resonance (ST-FMR) in symmetric magnetic tunnel junctions (MTJs) with a varied thickness of the MgO tunnel barrier (0.75 nm < $t_{MgO}$ < 1.05 nm) is studied using the spin-torque diode effect. The application of an RF current into nanosized MTJs generates a DC mixing voltage across the device when the frequency is in resonance with the resistance oscillations arising from the spin transfer torque. Magnetization precession in the free and reference layers of the MTJs is analyzed by comparing ST-FMR signals with macrospin and micromagnetic simulations. From ST-FMR spectra at different DC bias voltage, the in-plane and perpendicular torkances are derived. The experiments and free-electron model calculations show that the absolute torque values are independent of tunnel barrier thickness. The influence of coupling between the free and reference layer of the MTJs on the ST-FMR signals and the derived torkances are discussed.

cond-mat.mes-hall↗

arXiv2012

Magnetic field sensor with voltage-tunable sensing properties

We report on a magnetic field sensor based on CoFeB/MgO/CoFeB magnetic tunnel junctions. By taking advantage of the perpendicular magnetic anisotropy of the CoFeB/MgO interface, the magnetization of the sensing layer is tilted out-of-plane which results in a linear response to in-plane magnetic fields. The application of a bias voltage across the MgO tunnel barrier of the field sensor affects the magnetic anisotropy and thereby its sensing properties. An increase of the maximum sensitivity and simultaneous decrease of the magnetic field operating range by a factor of two is measured. Based on these results, we propose a voltage-tunable sensor design that allows for active control of the sensitivity and the operating filed range with the strength and polarity of the applied bias voltage.

cond-mat.mtrl-sci↗

arXiv2011

Spin transfer torque oscillator based on asymmetric magnetic tunnel junctions

We present a study of the spin transfer torque oscillator based on CoFeB/MgO/CoFeB asymmetric magnetic tunnel junctions. We observe microwave precession in junctions with different thickness of the free magnetization layer. Taking advantage of the ferromagnetic interlayer exchange coupling between the free and reference layer in the MTJ and perpendicular interface anisotropy in thin CoFeB electrode we demonstrate the nanometer scale device that can generate high frequency signal without external magnetic field applied. The amplitude of the oscillation exceeds 10 nV/Hz^0.5 at 1.5 GHz.

cond-mat.mtrl-sci↗