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Woong Kim

Publications and source records attributed to Woong Kim.

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Improving the Performance of Sequential Recommendation Systems with an Extended Large Language Model

Recently, competition in the field of artificial intelligence (AI) has intensified among major technological companies, resulting in the continuous release of new large-language models (LLMs) that exhibit improved language understanding and context-based reasoning capabilities. It is expected that these advances will enable more efficient personalized recommendations in LLM-based recommendation systems through improved quality of training data and architectural design. However, many studies have not considered these recent developments. In this study, it was proposed to improve LLM-based recommendation systems by replacing Llama2 with Llama3 in the LlamaRec framework. To ensure a fair comparison, random seed values were set and identical input data was provided during preprocessing and training. The experimental results show average performance improvements of 38.65\%, 8.69\%, and 8.19\% for the ML-100K, Beauty, and Games datasets, respectively, thus confirming the practicality of this method. Notably, the significant improvements achieved by model replacement indicate that the recommendation quality can be improved cost-effectively without the need to make structural changes to the system. Based on these results, it is our contention that the proposed approach is a viable solution for improving the performance of current recommendation systems.

cs.IR

Electrical Contacts to Carbon Nanotubes Down to 1nm in Diameter

Rhodium (Rh) is found similar to Palladium (Pd) in making near-ohmic electrical contacts to single-walled carbon nanotubes (SWNTs) with diameters d > ~ 1.6 nm. Non-negligible positive Schottky barriers (SBs) exist between Rh or Pd and semiconducting SWNTs (S-SWNTs) with d < ~ 1.6 nm. With Rh and Pd contacts, the characteristics of SWNT field-effect transistors (FETs) and SB heights at the contacts are largely predictable based on the SWNT diameters, without random variations among devices. Surprisingly, electrical contacts to metallic SWNTs (M-SWNTs) also appear to be diameter dependent especially for small SWNTs. Ohmic contacts are difficult for M-SWNTs with diameters < ~ 1.0 nm possibly due to tunnel barriers.

cond-mat.mes-hall

Advancements in Complementary Carbon Nanotube Field-Effect Transistors

High performance p- and n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) are obtained by using high and low work function metals, Pd and Al as source/drain (S/D) electrodes respectively. Ohmic contacts made to chemically intrinsic SWNTs, with no or small Schottky barriers (SB), afford high ON-state currents up to 20 uA per tube. The lack of significant Fermi-level pinning at the nanotube-metal interfaces allows for fine-tuning of the barrier heights for p-and n-channel conductions by changing the contact metals. The air-stable p- and n-FETs thus obtained can be used for complementary nanoelectronics, as demonstrated with the fabrication of an inverter. Other important issues regarding nanotube FETs including hysteresis, OFF-state leak currents, choice of nanotube diameter, and threshold voltage control are discussed.

cond-mat.mes-hall