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Wooseok Choi

Publications and source records attributed to Wooseok Choi.

8 recordsLinked to original sources
arXiv2026

Update Disturbance-Resilient Analog ReRAM Crossbar Arrays for In-Memory Deep Learning Accelerators

Resistive memory (ReRAM) technologies with crossbar array architectures hold significant potential for analog AI accelerator hardware, enabling both in-memory inference and training. Recent developments have successfully demonstrated inference acceleration by offloading compute-heavy training workloads to off-chip digital processors. However, in-memory acceleration of training algorithms is crucial for more sustainable and power-efficient AI, but still in an early stage of research. This study addresses in-memory training acceleration using analog ReRAM arrays, focusing on a key challenge during fully parallel weight updates: disturbances of the weight values in cross-point devices. A ReRAM device solution is presented on 350 nm silicon technology, utilizing a resistive switching conductive metal oxide (CMO) formed on a nanoscale conductive filament within a HfOx layer. The devices not only exhibit 60 ns fast, non-volatile analog switching, but also demonstrates outstanding resilience to update disturbances, enduring over 100k pulses. The disturbance tolerance of the ReRAM is analyzed using COMSOL Multiphysics simulations, modeling the filament-induced thermoelectric energy concentration that results in a highly nonlinear device responses to input voltage amplitudes. Disturbance-free parallel weight mapping is also demonstrated on the back-end-of-line integrated ReRAM array chip. Finally, comprehensive hardware-aware neural network simulations validate the potential of our ReRAM for in-memory deep learning accelerators capable of fully parallel weight updates.

cs.ET↗
arXiv2026

Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive-Metal-Oxide/HfOx ReRAM via Compact Modeling

Resistive Random Access Memory (ReRAM) devices offer a promising solution for next-generation non-volatile memory and neuromorphic computing systems. Yet, existing compact models fail to capture analog resistive switching behavior of ReRAM devices. This work presents an advanced physics-based compact model for analog filamentary Conductive-Metal-Oxide (CMO)/HfOx ReRAM, capable of reproducing switching characteristics over a broad range of operating conditions. Compared to the state-of-the-art, the model extends the dynamic interplay between ion migration and electron hopping, while also accounting for parasitic resistive elements. Simulations of various voltage inputs are tested to reproduce quasi-static I-V curves, SET switching kinetics under single-pulse programming conditions, and analog accumulative conductance modulation upon bipolar identical pulse streams. Additional simulations reveal the physical criterion underlying the stabilization of the CMO/HfOx-based ReRAM memory state around the equilibrium point, namely symmetry point, under pulsing conditions when a fading memory mechanism emerges. Building upon the evidence of such equilibrium stabilization under pulsing and quasi-static conditions, a procedure is established to visualize and map equilibrium memory states across different input domains. The physical model supports design optimization of switching behavior for analog neuromorphic systems and non-volatile memory architectures. It also enables accurate integrated circuit simulations with CMO/HfOx-based ReRAM technology.

cs.ET↗
arXiv2026

Analog Weight Update Rule in Ferroelectric Hafnia, using pico-Joule Programming Pulses

In an effort to compete with the brain's efficiency at processing information, neuromorphic hardware combines artificial synapses and neurons using mixed-signal circuits and emerging memories. In ferroelectric resistive weights, the strength of the synaptic connection between two neurons is stored in the device conductance. During learning, programming pulses are applied to the synaptic weight, which reconfigures the ferroelectric domains and adjusts the conductance. One strategy to lower the energy cost during the training phase is to lower the duration of the programming pulses. However, the latter cannot be shorter than the self-loading time of the resistive weights, limited by intrinsic parasitics in the circuits. In this work, ferroelectric resistive weights are fabricated using a process compatible with CMOS Back-End-Of-Line integration, based on hafnia/zirconia nanolaminates. By laterally scaling the device area under 100 $\mu$m$^2$, the self-loading time becomes sufficiently short to enable 20 ns programming, which corresponds to a maximum of 3 picoJoules per pulse. Further, in this work, the weight update rule with 20 ns pulses is experimentally measured not only for different amplitudes but also for different initial conductance states. We find that the final weight is determined by the pulse amplitude, independent of the initial weight value.

cs.ET↗
arXiv2025

All-in-One Analog AI Hardware: On-Chip Training and Inference with Conductive-Metal-Oxide/HfOx ReRAM Devices

Analog in-memory computing is an emerging paradigm designed to efficiently accelerate deep neural network workloads. Recent advancements have focused on either inference or training acceleration. However, a unified analog in-memory technology platform-capable of on-chip training, weight retention, and long-term inference acceleration-has yet to be reported. This work presents an all-in-one analog AI accelerator, combining these capabilities to enable energy-efficient, continuously adaptable AI systems. The platform leverages an array of analog filamentary conductive-metal-oxide (CMO)/HfOx resistive switching memory cells (ReRAM) integrated into the back-end-of-line (BEOL). The array demonstrates reliable resistive switching with voltage amplitudes below 1.5V, compatible with advanced technology nodes. The array multi-bit capability (over 32 stable states) and low programming noise (down to 10nS) enable a nearly ideal weight transfer process, more than an order of magnitude better than other memristive technologies. Inference performance is validated through matrix-vector multiplication simulations on a 64x64 array, achieving a root-mean-square error improvement by a factor of 20 at 1 second and 3 at 10 years after programming, compared to state-of-the-art. Training accuracy closely matching the software equivalent is achieved across different datasets. The CMO/HfOx ReRAM technology lays the foundation for efficient analog systems accelerating both inference and training in deep neural networks.

cs.ET↗
arXiv2025

Hardware Implementation of Ring Oscillator Networks Coupled by BEOL Integrated ReRAM for Associative Memory Tasks

We demonstrate the first hardware implementation of an oscillatory neural network (ONN) utilizing resistive memory (ReRAM) for coupling elements. A ReRAM crossbar array chip, integrated into the Back End of Line (BEOL) of CMOS technology, is leveraged to establish dense coupling elements between oscillator neurons, allowing phase-encoded analog information to be processed in-memory. We also realize an ONN architecture design with the coupling ReRAM array. To validate the architecture experimentally, we present a conductive metal oxide (CMO)/HfOx ReRAM array chip integrated with a 2-by-2 ring oscillator-based network. The system successfully retrieves patterns through correct binary phase locking. This proof of concept underscores the potential of ReRAM technology for large-scale, integrated ONNs.

cs.ET↗
arXiv2025

Edge Training and Inference with Analog ReRAM Technology for Hand Gesture Recognition

Tactile hand gesture recognition is a crucial task for user control in the automotive sector, where Human-Machine Interactions (HMI) demand low latency and high energy efficiency. This study addresses the challenges of power-constrained edge training and inference by utilizing analog Resistive Random Access Memory (ReRAM) technology in conjunction with a real tactile hand gesture dataset. By optimizing the input space through a feature engineering strategy, we avoid relying on large-scale crossbar arrays, making the system more suitable for edge deployment. Through realistic hardware-aware simulations that account for device non-idealities derived from experimental data, we demonstrate the functionalities of our analog ReRAM-based analog in-memory computing for on-chip training, utilizing the state-of-the-art Tiki-Taka algorithm. Furthermore, we validate the classification accuracy of approximately 91.4% for post-deployment inference of hand gestures. The results highlight the potential of analog ReRAM technology and crossbar architecture with fully parallelized matrix computations for real-time HMI systems at the Edge.

eess.SP↗
arXiv2020

Cheetah: Optimizing and Accelerating Homomorphic Encryption for Private Inference

As the application of deep learning continues to grow, so does the amount of data used to make predictions. While traditionally, big-data deep learning was constrained by computing performance and off-chip memory bandwidth, a new constraint has emerged: privacy. One solution is homomorphic encryption (HE). Applying HE to the client-cloud model allows cloud services to perform inference directly on the client's encrypted data. While HE can meet privacy constraints, it introduces enormous computational challenges and remains impractically slow in current systems. This paper introduces Cheetah, a set of algorithmic and hardware optimizations for HE DNN inference to achieve plaintext DNN inference speeds. Cheetah proposes HE-parameter tuning optimization and operator scheduling optimizations, which together deliver 79x speedup over the state-of-the-art. However, this still falls short of plaintext inference speeds by almost four orders of magnitude. To bridge the remaining performance gap, Cheetah further proposes an accelerator architecture that, when combined with the algorithmic optimizations, approaches plaintext DNN inference speeds. We evaluate several common neural network models (e.g., ResNet50, VGG16, and AlexNet) and show that plaintext-level HE inference for each is feasible with a custom accelerator consuming 30W and 545mm^2.

cs.CR↗