arXiv subjects

Wu Xiong

Publications and source records attributed to Wu Xiong.

5 recordsLinked to original sources

arXiv2026

Ultrahigh Intrinsic Hole Mobilities in $M$N$_2$ ($M$= Mo and W) at Room Temperature

High-mobility $p$-type semiconductors are essential for advanced electronic devices but remain scarce. Here, using a hierarchical screening framework that combines first-principles calculations with Boltzmann transport theory, we identify $M$N$_2$ ($M$= Mo and W) family as polar semiconductors with exceptionally high intrinsic hole mobilities. In particular, 1H-WN$_2$ exhibits a room-temperature hole mobility exceeding $10^{4}$~$\mathrm{cm^2\,V^{-1}\,s^{-1}}$. This exceptional transport performance arises from the synergistic suppression of polar-optical-phonon and acoustic-phonon scattering, together with a reduced intervalley-scattering phase space induced by spin--valley locking. These effects arise from anomalously small Born effective charges, strong covalent N--N bonds, and orbital hybridization between N-$2p_x$/$2p_y$ and W-$5d_{xy}$/$5d_{x^2-y^2}$ in the N$_2$-dimer-based structure. Our results establish MoN$_2$ and WN$_2$ as a promising class of high-mobility polar semiconductors and introduce a crystal-structure-based strategy for concurrently suppressing multiple electron--phonon scattering channels, thereby revising design principles for high-mobility materials.

cond-mat.mtrl-sci↗

arXiv2026

Stacking-dependent thermoelectric transport in layered Sc_2Si_2Te_6 from first principles

Stacking polymorphism is a common characteristic of van der Waals layered materials and can substantially modify their physical properties. Here, based on first-principles calculations combined with electron and phonon transport theories, we systematically investigate the thermodynamic stability, electronic structure, lattice dynamics, and thermoelectric performance of Sc_2Si_2Te_6 with three high-symmetry stacking sequences, namely, AA, AB, and ABC. We find that the AA- and AB-stacked structures are nearly degenerate in energy with the experimentally reported ABC phase, and that the maximum sliding barrier among these stacking sequences is only about 10~meV/atom, thereby accounting for the stacking faults observed experimentally. These three stacking sequences exhibit distinct electronic structures, with the conduction-band minimum being highly sensitive to the stacking sequence. As a consequence, the conduction-band degeneracies are 12, 2, and 8 for the ABC, AA, and AB stackings, respectively, leading to markedly different electronic transport properties near the band edge. The lattice thermal conductivity is governed primarily by three-phonon scattering, whereas four-phonon scattering provides an additional reduction, particularly in the ABC stacking. Among the three structures, the AB stacking exhibits the lowest lattice thermal conductivity owing to its stronger three-phonon scattering and lower phonon group velocity. As a result, the maximum thermoelectric figure of merit, ZT, is achieved in the ABC structure, followed closely by the AB structure, whereas the AA structure shows a substantially reduced value. These results demonstrate that the stacking sequence exerts a non-negligible influence on the thermoelectric performance of Sc_2Si_2Te_6 and suggest that suppressing the formation of the AA stacking is important for achieving high thermoelectric performance.

cond-mat.mtrl-sci↗

arXiv2025

Synergetic Enhancement of Power Factors and Suppression of Lattice Thermal Conductivities via Biaxial Strain in ScAgSe$_2$ and TmAgTe$_2$

The challenge of achieving high thermoelectric (TE) performance is mainly from the entanglement among Seebeck coefficient ($S$), electrical conductivity ($σ$), and lattice thermal conductivity ($κ_{\mathrm{L}}$). In this work, we propose a synergetic strategy of enhancing power factor (PF, $S^2σ$) and suppressing $κ_{\mathrm{L}}$ by applying a biaxial tensile strain in two silver chalcogenides ScAgSe$_2$ and TmAgTe$_2$ with TlCdS$_2$-type structure. The forbidden $p$-$d$ orbital coupling at the $Γ$ point and allowed $p$-$d$ orbital coupling at the A point and the middle of $Λ$ line leads to high electronic band dispersion along the $Γ$-A direction and a high-degeneracy valence band valley ($Λ_2$). The elongation of the Ag-Se bond under tensile strain weakens the orbital coupling between Ag-$d$ and Se/Te-$p$ orbitals and reduces the band energy at the A point, which aligns the valence band and achieving a high band degeneracy. Concurrently, the weaker Ag-Se/Ag-Te bond under a small tensile strain leads to lower phonon group velocity and strong three- and four phonon scatterings, leading to lower $κ_{\mathrm{L}}$. Our first-principles calculations combined with electron-phonon coupling analysis as well as phonon and electron Boltzmann transport equations show that applying a 3\% (2\%) tensile strain can enhance the PF along the $c$-axis of ScAgSe$_2$ (TmAgTe$_2$) by 243\% (246\%) at a carrier concentration of 3$\times$10$^{20}$ cm$^{-3}$ and reduce the $κ_{\mathrm{L}}$ by 37\% (26\%) at 300 K. Consequently, 2 $\sim$ 4 times of $ZT$ enhancement is obtained by 3\% or 1\% tensile strain in ScAgSe$_2$ (TmAgTe$_2$) at 300 K, achieving a maximum $ZT$ of 3.10 (3.62) at 800 K. Our material design strategy based on molecular orbital analysis reveals an effective route to boosting TE performance, and can be extended to other systems as well.

cond-mat.mtrl-sci↗

arXiv2025

Thermoelectric Properties of Copper-based Chalcopyrite Semiconductors Cu$MX_2$ ($M$ = Al, Ga, and In; $X$ = S, Se, and Te) from First-Principles Calculations

Copper-based chalcopyrite semiconductors have attracted sustained interest owing to their promising thermoelectric (TE) performance, yet the microscopic origins of their TE behavior remain incompletely understood. Here, we systematically investigate the TE properties of Cu$MX_2$ ($M=$ Al, Ga, and In; $X=$ S, Se, and Te) using first-principles calculations. For $p$-type doping, the calculated electrical conductivities ($σ$), hole mobilities ($μ$), Seebeck coefficients ($S$), and power factors (PFs) of CuGaTe$_2$ and CuInTe$_2$ show excellent agreement with experimental data. At fixed temperature and hole concentration, as $X$ varies from S to Te, the hole mobility increases markedly due to progressively weaker polar--optical--phonon scattering, reflecting the reduced ionic contribution to the dielectric response in compounds with heavier chalcogens. Combined with smaller transport effective masses, Cu$M$Te$_2$ compounds therefore exhibit high $σ$ and large PFs. Across the Cu$MX_2$ family, the anomalously lower $κ_{\mathrm{L}}$ of Cu$M$Se$_2$ relative to Cu$M$Te$_2$ arises primarily from enhanced three-phonon scattering at low-frequency region. For a given $M$, Cu$M$S$_2$ displays the steepest temperature-induced decrease in $κ_{\mathrm{L}}$ and attains a smaller $κ_{\mathrm{L}}$ than Cu$M$Se$_2$ and Cu$M$Te$_2$ at 800~K. Given the low band degeneracy and comparatively modest hole mobilities of Cu$MX_2$ compounds, the most effective routes to further improve their TE performance are to enhance $σ$ and reduce $κ_{\mathrm{L}}$ through doping.

cond-mat.mtrl-sci↗

arXiv2025

Forbidden p-d Orbital Coupling Accelerates High-Power-Factor Materials Discovery

The intrinsic entanglement between electrical conductivity ($σ$) and the Seebeck coefficient ($S$) significantly constrains power factor (PF) enhancement in thermoelectric (TE) materials. While high valley degeneracy ($N_{\mathrm{vk}}$) effectively balances $σ$ and $S$ to improve PF, identifying compounds with high $N_{\mathrm{vk}}$ remains challenging. In this study, we develop an effective approach to rapid discover $p$-type semiconductors with high $N_{\mathrm{vk}}$ through manipulating anion-$p$ and cation-$d$ orbital coupling. By prohibiting $p$-$d$ orbital coupling at the $Γ$ point, the valence band maximum shifts away from the $Γ$ point (where $N_{\mathrm{vk}}$=1), thereby increasing $N_{\mathrm{vk}}$. Through the examination of the common irreducible representations of anion-$p$ and cation-$d$ orbitals at the $Γ$ point, we identify 7 compounds with $N_{\mathrm{vk}}$ $\ge$ 6 from 921 binary and ternary semiconductors. First-principles calculations with electron-phonon coupling demonstrate that PtP$_2$, PtAs$_2$, and PtS$_2$ exhibit exceptionally high PFs of 130, 127, and 82 $μ$Wcm$^{-1}$K$^{-2}$ at 300K, respectively, which are three to five times higher than those of the well-studied TE materials. This work not only elucidates the underlying mechanism of high $N_{\mathrm{vk}}$ formation through group theory, but also establishes an efficient high-PF material discovery paradigm, extended to more complex systems.

cond-mat.mtrl-sci↗