Wu Yizheng | Searcharxiv

arXiv2026

Long-range orbital transport and inverse orbital Hall effect in Co/Ru-based terahertz emitters

The utilization of terahertz (THz) emission spectroscopy in femtosecond photoexcited spintronic heterostructures has emerged as a versatile tool for investigating ultrafast spin-transport in a noncontact and non-invasive manner. However, the investigation of ultrafast orbital-transport is still in the primitive stage. Here, we experimentally demonstrate the orbital-to-charge current conversion in Co/Ru heterostructures. Time-domain measurements reveal delayed and broadened terahertz waveforms with increasing Ru thickness, consistent with long-range orbital transport. In Co/Pt/Ru trilayers, the terahertz emission is further enhanced through constructive interference between the inverse spin Hall effect (ISHE) in Pt and inverse orbital Hall effect (IOHE) in Ru, while reversed stack structures show suppressed output. Ferromagnetic resonance (FMR) measurements reveal a strong correlation between damping and THz amplitude, highlighting efficient angular momentum conversion. These results position Co/Ru as a promising orbitronic platform for tunable ultrafast THz emission. Our results not only strengthen the physical mechanism of condensed matter physics but also pave the way for designing promising spin-orbitronic devices and terahertz emitters.

cond-mat.mtrl-sci↗

arXiv2023

Full-scale field-free spin-orbit switching of the CoPt layer grown on vicinal substrates

A simple, reliable and field-free spin orbit torque (SOT)-induced magnetization switching is a key ingredient for the development of the electrical controllable spintronic devices. Recently, the SOT induced deterministic switching of the CoPt single layer has attracts a lot of interests, as it could simplifies the structure and add new flexibility in the design of SOT devices, compared with the Ferromagnet/Heavy metal bilayer counterparts. Unfortunately, under the field-free switching strategies used nowadays, the switching of the CoPt layer is often partial, which sets a major obstacle for the practical applications. In this study, by growing the CoPt on vicinal substrates, we could achieve the full-scale (100% switching ratio) field-free switching of the CoPt layer. We demonstrate that when grown on vicinal substrates, the magnetic easy axis of the CoPt could be tilted from the normal direction of the film plane; the strength of Dzyaloshinskii Moriya interaction (DMI) would be also be tuned as well. Micromagnetic simulation further reveal that the field-free switching stems from tilted magnetic anisotropy induced by the vicinal substrate, while the enhancement of DMI help reducing the critical switching current. In addition, we also found that the vicinal substrates could also enhance the SOT efficiency. With such simple structure, full-scale switching, tunable DMI and SOT efficiency, our results provide a new knob for the design SOT-MRAM and future spintronic devices.

cond-mat.mtrl-sci↗