arXiv subjects

X. Lou

Publications and source records attributed to X. Lou.

At least 19 recordsLinked to original sources

arXiv2021

Triggering phase-coherent spin packets by pulsed electrical spin injection across an Fe/GaAs Schottky barrier

The precise control of spins in semiconductor spintronic devices requires electrical means for generating spin packets with a well-defined initial phase. We demonstrate a pulsed electrical scheme that triggers the spin ensemble phase in a similar way as circularly-polarized optical pulses are generating phase coherent spin packets. Here, we use fast current pulses to initialize phase coherent spin packets, which are injected across an Fe/GaAs Schottky barrier into $n$-GaAs. By means of time-resolved Faraday rotation, we demonstrate phase coherence by the observation of multiple Larmor precession cycles for current pulse widths down to 500 ps at 17 K. We show that the current pulses are broadened by the charging and discharging time of the Schottky barrier. At high frequencies, the observable spin coherence is limited only by the finite band width of the current pulses, which is on the order of 2 GHz. These results therefore demonstrate that all-electrical injection and phase control of electron spin packets at microwave frequencies is possible in metallic-ferromagnet/semiconductor heterostructures.

cond-mat.mes-hall↗

arXiv2020

Colossal band renormalization and stoner ferromagnetism induced by electron-antiferromagnetic-magnon coupling

The interactions between electrons and antiferromagnetic magnons (AFMMs) are important for a large class of correlated materials. For example, they are the most plausible pairing glues in high-temperature superconductors, such as cuprates and iron pnictides. However, unlike electron-phonon interactions (EPIs), clear-cut observations regarding how electron-AFMM interactions (EAIs) affect the band structure are still lacking. Consequently, critical information on the EAIs, such as its strength and doping dependence, remains elusive. Here we directly observe that EAIs induces a kink structure in the band dispersion in Ba$_{1-x}$K$_x$Mn$_2$As$_2$, and subsequently unveil several key characteristics of EAIs. We found that the coupling constant of EAIs can be as large as 6, and it shows huge doping dependence and temperature dependence, all in stark contrast to the behaviors of EPI and beyond our current understanding of EAIs. Such a colossal renormalization of electronic bands by EAIs drives the system to the Stoner criteria, giving the intriguing ferromagnetic state in Ba$_{1-x}$K$_x$Mn$_2$As$_2$. Our results expand the current knowledge of EAIs, which may facilitate the further understanding of many correlated materials where EAIs play a critical role, such as high-temperature superconductors.

cond-mat.str-el↗

arXiv2020

Distinct Kondo Screening Behaviors in Heavy Fermion Filled Skutterudites with 4f1 and 4f2 Configurations

Filled-skutterudite heavy fermion (HF) compounds host rich ground states depending on the f electron configurations. CeOs4Sb12 (COS) with Ce 4f1, and PrOs4Sb12 (POS) with Pr 4f2 configurations show distinct properties of Kondo insulating and HF superconductivity, respectivity. We unveiled the underlying microscopic origin by angle-resolved photoemission spectroscopy studies. Their eV-scale band structure matches well, representing the common characters of conduction electrons in ROs4Sb12 systems (R = rare earth). However, f electrons interact differently with conduction electrons in them. Strong hybridization between conduction electrons and f electrons is observed in COS with band dependent hybridization gaps, and the development of Kondo insulating state is directly revealed. Although the ground state of POS is a singlet, finite but incoherent hybridization exists due to Kondo scattering with the thermally excited triplet crystalline electric field (CEF) state. Our results help to understand the intriguing properties in COS and POS, and provide a clean demonstration of the microscopic differences in HF systems with 4f1 and 4f2 configurations.

cond-mat.str-el↗

arXiv2020

High-Resolution In-situ Synchrotron X-ray Studies of Inorganic Perovskite CsPbBr$_3$: New Symmetry Assignments and Structural Phase Transitions

Perovskite photovoltaic ABX$_3$ systems are being studied due to their high energy-conversion efficiencies with current emphasis placed on pure inorganic systems. In this work, synchrotron single-crystal diffraction measurements combined with second harmonic generation measurements reveal the absence of inversion symmetry below room temperature in CsPbBr$_3$. Local structural analysis by pair distribution function and X-ray absorption fine structure methods are performed to ascertain the local ordering, atomic pair correlations, and phase evolution in a broad range of temperatures. The currently accepted space group assignments for CsPbBr$_3$ are found to be incorrect in a manner that profoundly impacts physical properties. New assignments are obtained for the bulk structure: $Im$$\bar{3}$ (above $\sim$ 410 K), $P$2$_1$/$m$ (between $\sim$ 300 K and $\sim$ 410 K), and the polar group $Pm$ (below $\sim$ 300 K), respectively. The newly observed structural distortions exist in the bulk structure consistent with the expectation of previous photoluminescence and Raman measurements. High-pressure measurements reveal multiple low-pressure phases, one of which exists as a metastable phase at ambient pressure. This work should help guide research in the perovskite photovoltaic community to better control the structure under operational conditions and further improve transport and optical properties.

cond-mat.mtrl-sci↗

arXiv2018

Robust and clean Majorana zero mode in the vortex core of high-temperature superconductor (Li0.84Fe0.16)OHFeSe

The Majorana fermion, which is its own anti-particle and obeys non-abelian statistics, plays a critical role in topological quantum computing. It can be realized as a bound state at zero energy, called a Majorana zero mode (MZM), in the vortex core of a topological superconductor, or at the ends of a nanowire when both superconductivity and strong spin orbital coupling are present. A MZM can be detected as a zero-bias conductance peak (ZBCP) in tunneling spectroscopy. However, in practice, clean and robust MZMs have not been realized in the vortices of a superconductor, due to contamination from impurity states or other closely-packed Caroli-de Gennes-Matricon (CdGM) states, which hampers further manipulations of Majorana fermions. Here using scanning tunneling spectroscopy, we show that a ZBCP well separated from the other discrete CdGM states exists ubiquitously in the cores of free vortices in the defect free regions of (Li0.84Fe0.16)OHFeSe, which has a superconducting transition temperature of 42 K. Moreover, a Dirac-cone-type surface state is observed by angle-resolved photoemission spectroscopy, and its topological nature is confirmed by band calculations. The observed ZBCP can be naturally attributed to a MZM arising from this chiral topological surface states of a bulk superconductor. (Li0.84Fe0.16)OHFeSe thus provides an ideal platform for studying MZMs and topological quantum computing.

cond-mat.supr-con↗

arXiv2018

Performance study of particle identification at the CEPC using TPC $dE/dx$ information

The kaon identification is crucial for the flavor physics, and also benefits the flavor and charge reconstruction of the jets. We explore the particle identification capability for tracks with momenta ranging from 2-20 GeV/c using the $dE/dx$ measurements in the Time Projection Chamber at the future Circular Electron-Positron Collider. Based on Monte Carlo simulation, we anticipate that an average $3.2~σ$ ($2.6~σ$) $K/π$ separation can be achieved based on $dE/dx$ information for an optimistic (conservative) extrapolation of the simulated performance to the final system. Time-of-flight (TOF) information from the Electromagnetic Calorimeter can provide $K/π$ separation around 1 GeV/c and reduce the $K/p$ mis-identification rate. By combining the $dE/dx$ and TOF information, we estimate that in the optimistic scenario a kaon selection in inclusive hadronic $Z$ decays with both the average efficiency and purity approaching 95\% can be achieved.

physics.ins-det↗

arXiv2018

Unveiling the superconducting mechanism of Ba$_{0.51}$K$_{0.49}$BiO$_3$

Bismuthates were the first family of oxide high-temperature superconductors, exhibiting superconducting transition temperatures (Tc) up to 32K, but the superconducting mechanism remains under debate despite more than 30 years of extensive research. Our angle-resolved photoemission spectroscopy studies on Ba$_{0.51}$K$_{0.49}$BiO$_3$ reveal an unexpectedly 34% larger bandwidth than in conventional density functional theory calculations. This can be reproduced by calculations that fully account for long-range Coulomb interactions --- the first direct demonstration of bandwidth expansion due to the Fock exchange term, a long-accepted and yet uncorroborated fundamental effect in many body physics. Furthermore, we observe an isotropic superconducting gap with 2Δ$_0$/k$_B$ T$_c$ = 3.51 $\pm$ 0.05, and strong electron-phonon interactions with a coupling constant λ$\sim$ 1.3 $\pm$ 0.2. These findings solve a long-standing mystery --- Ba$_{0.51}$K$_{0.49}$BiO$_3$ is an extraordinary Bardeen-Cooper-Schrieffer (BCS) superconductor, where long-range Coulomb interactions expand the bandwidth, enhance electron-phonon coupling, and generate the high Tc. Such effects will also be critical for finding new superconductors.

cond-mat.supr-con↗

arXiv2018

Direct observation of heavy quasiparticles in the Kondo lattice CeIn3

The electronic structure of the Kondo lattice CeIn3 has been studied by on-resonant angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy. A weakly dispersive quasiparticle band has been observed directly with an energy dispersion of 4 meV by photoemission, implying the existence of weak hybridization between the f electrons and conduction electrons. The hybridization is further confirmed by the formation of the hybridization gap revealed by temperature-dependent scanning tunneling spectroscopy. Moreover, we find the hybridization strength in CeIn3 is much weaker than that in the more two-dimensional compounds CeCoIn5 and CeIrIn5. Our results may be essential for the complete microscopic understanding of this important compound and the related heavy-fermion systems.

cond-mat.str-el↗

arXiv2017

Phonon-enhanced superconductivity at the FeSe/SrTiO3 interface

The dream of room temperature superconductors has inspired intense research effort to find routes for enhancing the superconducting transition temperature (Tc). Therefore, single-layer FeSe on a SrTiO3 substrate, with its extraordinarily high Tc amongst all interfacial superconductors and iron based superconductors, is particularly interesting, but the mechanism underlying its high Tc has remained mysterious. Here we show through isotope effects that electrons in FeSe couple with the oxygen phonons in the substrate, and the superconductivity is enhanced linearly with the coupling strength atop the intrinsic superconductivity of heavily-electron-doped FeSe. Our observations solve the enigma of FeSe/SrTiO3, and experimentally establish the critical role and unique behavior of electron-phonon forward scattering in a correlated high-Tc superconductor. The effective cooperation between interlayer electron-phonon interactions and correlations suggests a path forward in developing more high-Tc interfacial superconductors, and may shed light on understanding the high Tc of bulk high temperature superconductors with layered structures.

cond-mat.supr-con↗

arXiv2012

Triggering and probing of phase-coherent spin packets by time-resolved spin transport across an Fe/GaAs Schottky barrier

Time-resolved electrical spin transport is used to generate and probe spin currents in GaAs electrically. We use high bandwidth current pulses to inject phase-coherent spin packets from Fe into n-GaAs. By means of time-resolved Faraday rotation we demonstrate that spins are injected with a clearly defined phase by the observation of multiple Larmor precession cycles. We furthermore show that spin precession of optically created spin packets in n-GaAs can be probed electrically by spin-polarized photo-current pulses. The injection and detection experiments are not direct reciprocals of each other. In particular, we find that interfacial spin accumulation generated by the photocurrent pulse plays a critical role in time-resolved electrical spin detection.

cond-mat.mtrl-sci↗

arXiv2006

Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices

A longstanding goal of research in semiconductor spintronics is the ability to inject, modulate, and detect electron spin in a single device. A simple prototype consists of a lateral semiconductor channel with two ferromagnetic contacts, one of which serves as a source of spin-polarized electrons and the other as a detector. Based on work in analogous metallic systems, two important criteria have emerged for demonstrating electrical detection of spin transport. The first is the measurement of a non-equilibrium spin population using a non-local ferromagnetic detector through which no charge current flows. The potential at the detection electrode should be sensitive to the relative magnetizations of the detector and the source electrodes, a property referred to as the spin-valve effect. A second and more rigorous test is the existence of a Hanle effect, which is the modulation and suppression of the spin valve signal due to precession and dephasing in a transverse magnetic field. Here we report on the observation of both the spin valve and Hanle effects in lateral devices consisting of epitaxial Fe Schottky tunnel barrier contacts on an n-doped GaAs channel. The dependence on transverse magnetic field, temperature, and contact separation are in good agreement with a model incorporating spin drift and diffusion. Spin transport is detected for both directions of current flow through the source electrode. The sign of the electrical detection signal is found to vary with the injection current and is correlated with the spin polarization in the GaAs channel determined by optical measurements. These results therefore demonstrate a fully electrical scheme for spin injection, transport, and detection in a lateral semiconductor device.

cond-mat.mtrl-sci↗

arXiv2006

Optical and electrical spin injection and spin transport in hybrid Fe/GaAs devices

We discuss methods for imaging the nonequilibrium spin polarization of electrons in Fe/GaAs spin transport devices. Both optically- and electrically-injected spin distributions are studied by scanning magneto-optical Kerr rotation microscopy. Related methods are used to demonstrate electrical spin detection of optically-injected spin polarized currents. Dynamical properties of spin transport are inferred from studies based on the Hanle effect, and the influence of strain on spin transport data in these devices is discussed.

cond-mat.mtrl-sci↗

arXiv2006

Spin injection from perpendicular magnetized ferromagnetic $δ$-MnGa into (Al,Ga)As heterostructures

Electrical spin injection from ferromagnetic $δ$-MnGa into an (Al,Ga)As p-i-n light emitting diode (LED) is demonstrated. The $δ$-MnGa layers show strong perpendicular magnetocrystalline anisotropy, enabling detection of spin injection at remanence without an applied magnetic field. The bias and temperature dependence of the spin injection are found to be qualitatively similar to Fe-based spin LED devices. A Hanle effect is observed and demonstrates complete depolarization of spins in the semiconductor in a transverse magnetic field.

cond-mat.mtrl-sci↗

arXiv2006

Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface

We show that the accumulation of spin-polarized electrons at a forward-biased Schottky tunnel barrier between Fe and n-GaAs can be detected electrically. The spin accumulation leads to an additional voltage drop across the barrier that is suppressed by a small transverse magnetic field, which depolarizes the spins in the semiconductor. The dependence of the electrical accumulation signal on magnetic field, bias current, and temperature is in good agreement with the predictions of a drift-diffusion model for spin-polarized transport.

cond-mat.mtrl-sci↗

arXiv2005

Electron Spin Dynamics and Hyperfine Interactions in Fe/Al_0.1Ga_0.9As/GaAs Spin Injection Heterostructures

We have studied hyperfine interactions between spin-polarized electrons and lattice nuclei in Al_0.1Ga_0.9As/GaAs quantum well (QW) heterostructures. The spin-polarized electrons are electrically injected into the semiconductor heterostructure from a metallic ferromagnet across a Schottky tunnel barrier. The spin-polarized electron current dynamically polarizes the nuclei in the QW, and the polarized nuclei in turn alter the electron spin dynamics. The steady-state electron spin is detected via the circular polarization of the emitted electroluminescence. The nuclear polarization and electron spin dynamics are accurately modeled using the formalism of optical orientation in GaAs. The nuclear spin polarization in the QW is found to depend strongly on the electron spin polarization in the QW, but only weakly on the electron density in the QW. We are able to observe nuclear magnetic resonance (NMR) at low applied magnetic fields on the order of a few hundred Oe by electrically modulating the spin injected into the QW. The electrically driven NMR demonstrates explicitly the existence of a Knight field felt by the nuclei due to the electron spin.

cond-mat.mtrl-sci↗

arXiv2004

Spin injection from the Heusler alloy Co_2MnGe into Al_0.1Ga_0.9As/GaAs heterostructures

Electrical spin injection from the Heusler alloy Co_2MnGe into a p-i-n Al_0.1Ga_0.9As/GaAs light emitting diode is demonstrated. A maximum steady-state spin polarization of approximately 13% at 2 K is measured in two types of heterostructures. The injected spin polarization at 2 K is calculated to be 27% based on a calibration of the spin detector using Hanle effect measurements. Although the dependence on electrical bias conditions is qualitatively similar to Fe-based spin injection devices of the same design, the spin polarization injected from Co_2MnGe decays more rapidly with increasing temperature.

cond-mat.mtrl-sci↗

arXiv2004

Spin Injection and Relaxation in Ferromagnet-Semiconductor Heterostructures

We present a complete description of spin injection and detection in Fe/Al_xGa_{1-x}As/GaAs heterostructures for temperatures from 2 to 295 K. Measurements of the steady-state spin polarization in the semiconductor indicate three temperature regimes for spin transport and relaxation. At temperatures below 70 K, spin-polarized electrons injected into quantum well structures form excitons, and the spin polarization in the quantum well depends strongly on the electrical bias conditions. At intermediate temperatures, the spin polarization is determined primarily by the spin relaxation rate for free electrons in the quantum well. This process is slow relative to the excitonic spin relaxation rate at lower temperatures and is responsible for a broad maximum in the spin polarization between 100 and 200 K. The spin injection efficiency of the Fe/Al_xGa_{1-x}As Schottky barrier decreases at higher temperatures, although a steady-state spin polarization of at least 6 % is observed at 295 K.

cond-mat.mtrl-sci↗

arXiv2003

Nuclear Magnetic Resonance in a Ferromagnet-Semiconductor Heterostructure

We report the observation of nuclear magnetic resonance (NMR) in a ferromagnet-semiconductor heterostructure in the presence of a spin-polarized current. Spin-polarized electrons injected from a metallic ferromagnet generate a large nuclear spin population in a GaAs quantum well by dynamic polarization. The characteristic time for the polarization process is approximately 20 sec, and the nuclear polarization can persist for several minutes after the current is turned off. Resonant depolarization is observed in the presence of an AC magnetic field or when the injection current is modulated at the NMR frequency.

cond-mat↗