arXiv subjects

X. M. Zhang

Publications and source records attributed to X. M. Zhang.

At least 19 recordsLinked to original sources

arXiv2024

Shock consolidation and the corresponding plasticity in nanopowdered Mg

Nanopowder consolidation under high strain rate shock compression is a potential method for synthesizing and processing bulk nanomaterials. A thorough investigation of the shock deformation of powder materials is of great engineering significance. Here we combine nonequilibrium molecular dynamics (NEMD) simulations and X-ray diffraction (XRD) simulation methods to investigate the deformation twinning and pore compaction in shock-compressed np-Mg. Significant anisotropy and strong dependence on crystallographic orientation are presented during shock-induced deformation twinning. During the shock stage, three typical types of twins were firstly induced, namely {11-21} twin (T1), {11-22} twin (T2) and {10-12} twin (T3). Most of them were generated in grains with a larger angle between the impact direction and the c-axis of the lattice. With the increase in strain rate, the types and quantities of twins continued to enrich, but they did not occur when the strain rate was too high. We also discussed the deformation mechanisms of the three types of twins and found that the coupling of slip and shuffle dominated twin deformation. In addition, void filling occurred due to the interaction of twinning and other plastic deformations, leading to the densification of np-Mg. During the release stage, an interesting reverse change was observed, where the twins produced by the impact receded, and twins were produced in grains that were previously difficult to produce.

cond-mat.mtrl-sci↗

arXiv2020

Anisotropic and extreme magnetoresistance in the magnetic semimetal candidate Erbium monobismuthide

Rare-earth monopnictides display rich physical behaviors, featuring most notably spin and orbital orders in their ground state. Here, we grow ErBi single crystal and study its magnetic, thermal and electrical properties. An analysis of the magnetic entropy and magnetization indicates that the weak magnetic anisotropy in ErBi possibly derives from the mixing effect, namely the anisotropic ground state of Er3+ (4f11) mingles with the isotropic excited state through exchange interaction. At low temperature, an extremely large magnetoresistance (~104%) with a parabolic magnetic-field dependence is observed, which can be ascribed to the nearly perfect electron-hole compensation and ultrahigh carrier mobility. When the magnetic field is rotated in the ab (ac) plane and the current flows in the b axis, the angular magnetoresistance in ErBi shows a twofold (fourfold) symmetry. Similar case has been observed in LaBi where the anisotropic Fermi surface dominates the low-temperature transport. Our theoretical calculation suggests that near the Fermi level ErBi shares similarity with LaBi in the electronic band structures. These findings indicate that the angular magnetoresistance of ErBi could be mainly determined by its anisotropic Fermi surface topology. Besides, contributions from several other possibilities, including the spin-dependent scattering, spin-orbit scattering, and demagnetization correlation to the angular magnetoresistance of ErBi are also discussed.

cond-mat.mtrl-sci↗

arXiv2020

Dynamics of antiferromagnetic skyrmion in absence and presence of pinning defect

A theoretical study on the dynamics of an antiferromagnetic (AFM) skyrmion is indispensable for revealing the underlying physics and understanding the numerical and experimental observations. In this work, we present a reliable theoretical treatment of the spin current induced motion of an AFM skyrmion in the absence and presence of pinning defect. For an ideal AFM system free of defect, the skyrmion motion velocity as a function of the intrinsic parameters can be derived, based on the concept that the skyrmion profile agrees well with the 360 domain wall formula, leading to an explicit description of the skyrmion dynamics. However, for an AFM lattice containing a defect, the skyrmion can be pinned and the depinning field as a function of damping constant and pinning strength can be described by the Thiele approach. It is revealed that the depinning behavior can be remarkably influenced by the time dependent oscillation of the skyrmion trajectory. The present theory provides a comprehensive scenario for manipulating the dynamics of AFM skyrmion, informative for future spintronic applications based on antiferromagnets.

cond-mat.mtrl-sci↗

arXiv2020

Magnetic-field-induced nontrivial electronic state in the Kondo-lattice semimetal CeSb

Synergic effect of electronic correlation and spin-orbit coupling is an emerging topic in topological materials. Central to this rapidly developing area are the prototypes of strongly correlated heavy-fermion systems. Recently, some Ce-based compounds are proposed to host intriguing topological nature, among which the electronic properties of CeSb are still under debate. In this paper, we report a comprehensive study combining magnetic and electronic transport measurements, and electronic band structure calculations of this compound to identify its topological nature. Quantum oscillations are clearly observed in both magnetization and magnetoresistance at high fields, from which one pocket with a nontrivial Berry phase is recognized. Angular-dependent magnetoresistance shows that this pocket is elongated in nature and corresponds to the electron pocket as observed in LaBi. Nontrivial electronic structure of CeSb is further confirmed by first-principle calculations, which arises from spin splitting in the fully polarized ferromagnetic state. These features indicate that magnetic-field can induce nontrivial topological electronic states in this prototypical Kondo semimetal.

cond-mat.mtrl-sci↗

arXiv2019

Ultrafast domain wall motion in ferrimagnets induced by magnetic anisotropy gradient

The ultrafast magnetic dynamics in compensated ferrimagnets not only provides information similar to antiferromagnetic dynamics, but more importantly opens new opportunities for future spintronic devices [Kim et al., Nat. Mater. 16, 1187 (2017)]. One of the most essential issues for device design is searching for low-power-consuming and high-efficient methods of controlling domain wall. In this work, we propose to use the voltage-controlled magnetic anisotropy gradient as an excitation source to drive the domain wall motion in ferrimagnets. The ultrafast wall motion under the anisotropy gradient is predicted theoretically based on the collective coordinate theory, which is confirmed by the atomistic micromagnetic simulations. The antiferromagnetic spin dynamics is realized at the angular momentum compensation point, and the wall shifting has a constant speed under small gradient and can be slightly accelerated under large gradient due to the broadened wall width during the motion. For nonzero net angular momentum, the Walker breakdown occurs at a critical anisotropy gradient significantly depending on the second anisotropy and interfacial Dzyaloshinkii-Moriya interaction, which is highly appreciated for further experiments including the materials selection and device geometry design. More importantly, this work unveils a low-power-consuming method of controlling the domain wall in ferrimagnets, benefiting to future spintronic applications.

physics.app-ph↗

arXiv2018

Epitaxial growth and magnetic properties of NiMnAs film on GaAs substrate

Single-phase Ni0.46Mn0.54As films with strained C1b symmetry have been successfully grown on GaAs (001) substrates by molecular-beam epitaxy. The epitaxial relationship between the film and the substrate has been studied using synchrotron radiation, and a preferred configuration of (110)-orientated Ni0.46Mn0.54As on (001)-orientated GaAs was revealed. In addition, the magnetic properties of the films were found to be significantly influenced by the growth temperature. The optimized growth temperature is determined to be ~370 degree Celsius , for which relatively high Curie temperature, large saturation magnetization and coercive field, as well as the pronounced in-plane magnetic anisotropy were obtained. According to the results of X-ray absorption spectroscopy, the above phenomenon can be attributed to the variation of the local electronic structure of the Mn atoms. Our work provides useful information for the further investigations of NiMnAs, which is theoretically predicted to host robust half-metallicity.

cond-mat.mtrl-sci↗

arXiv2018

Surface reconstruction, premelting, and collapse of open-cell nanoporous Cu via thermal annealing

We systematic investigate the collapse of a set of open-cell nanoporous Cu (np-Cu) with the same porosity and shapes, but different specific surface area, during thermal annealing, via performing large-scale molecular dynamics simulations. Surface premelting is dominated in their collapses, and surface premelting temperatures reduce linearly with the increase of specific surface area. The collapse mechanisms are different for np-Cu with different specific surface area. If the specific surface area less than a critical value ($\sim$ 2.38 nm$^{-1}$), direct surface premelting, giving rise to the transition of ligaments from solid to liquid states, is the cause to facilitate falling-down of np-Cu during thermal annealing. While surface premelting and following recrystallization, accelerating the sloughing of ligaments and annihilation of pores, is the other mechanism, as exceeding the critical specific surface area. The recrystallization occurs at the temperatures below supercooling, where liquid is instable and instantaneous. Thermal-induced surface reconstruction prompts surface premelting via facilitating local "disordering" and "chaotic" at the surface, which are the preferred sites for surface premelting.

cond-mat.mtrl-sci↗

arXiv2016

On estimating the force-freeness based on observed magnetograms

It is a common practice in the solar physics community to test whether or not measured photospheric or chromospheric vector magnetograms are force-free, using the Maxwell stress as a measure. Some previous studies have suggested that magnetic fields of active regions in the solar chromosphere are close to be force-free whereas there is no consistency among previous studies on whether magnetic fields of active regions in the solar photosphere are force-free or not. Here we use three kinds of representative magnetic fields (analytical force-free solutions, modeled solar-like force-free fields and observed non-force-free fields) to discuss on how the measurement issues such as limited field of view, instrument sensitivity and measurement error could affect the estimation of force-freeness based on observed magnetograms. Unlike previous studies that focus on discussing the effect of limited field of view or instrument sensitivity, our calculation shows that just measurement error alone can significantly influence the results of force-freeness estimate, due to the fact that measurement errors in horizontal magnetic fields are usually ten times larger than that of the vertical fields. This property of measurement errors, interacting with the particular form of force-freeness estimate formula, would result in wrong judgments of the force-freeness: a truly force-free field may be mistakenly estimated as being non-force-free and a true non-force-free field may be estimated as being force-free. Our analysis calls for caution when interpreting the force-freeness estimates based on measured magnetograms, and also suggests that the true photospheric magnetic field may be further away from being force-free than they currently appear to be.

astro-ph.SR↗

arXiv2015

New spin injection scheme based on spin gapless semiconductors: A first-principles study

Spin injection efficiency based on conventional and/or half-metallic ferromagnet/semiconductor is greatly limited by the Schmidt obstacle due to conductivity mismatch, here we proposed that by replacing the metallic injectors with spin gapless semiconductors can significantly reduce the conductive mismatch to enhance spin injection efficiency. By performing first principles calculations based on superlattice structure, we have studied the representative system of Mn2CoAl/semiconductor spin injector scheme. The results showed that a high spin polarization was maintained at the interface in systems of Mn2CoAl/Fe2VAl constructed with (100) interface and Mn2CoAl/GaAs with (110) interface, and the latter is expected to possess long spin diffusion length. Inherited from the spin gapless feature of Mn2CoAl, a pronounced dip was observed around the Fermi level in the majority-spin density-of-states in both systems, suggesting fast transport of the low-density carriers.

cond-mat.mtrl-sci↗

arXiv2015

Giant Magneto-Seebeck Effect in Spin Valves

Giant magneto-Seebeck (GMS) effect was observed in Co/Cu/Co and NiFe/Cu/Co spin valves. Their Seebeck coefficients in parallel state was larger than that in antiparallel state, and GMS ratio defined as (SAP-SP)/SP could reach -9% in our case. The GMS originated not only from trivial giant magnetoresistance but also from spin current generated due to spin polarized thermoelectric conductivity in ferromagnetic materials and subsequent modulation of the spin current by spin configurations in spin valves. Simple Mott two-channel model reproduced a -11% GMS for the Co/Cu/Co spin valves, qualitatively consistent with our observations. The GMS effect could be applied simultaneously sensing temperature gradient and magnetic field and also be possibly applied to determine spin polarization of thermoelectric conductivity and Seebeck coefficient in ferromagnetic thin films.

cond-mat.mtrl-sci↗

arXiv2014

Spin injection based on the spin gapless semiconductor(SGS)/semiconductor heterostructures

Spin injection efficiency based on conventional ferromagnet (or half-metallic ferromagnet) /semiconductor is greatly limited by the Schmidt obstacle due to conductivity mismatch, here we proposed that by replacing the metallic injectors with spin gapless semiconductors can significantly reduce the conductive mismatch while conserve high spin polarization. By performing first principles calculations based on superlattice structure, we have studied the representative system of Mn2CoAl/semiconductor spin injector scheme. The results showed that high spin polarization were maintained at the interface in systems of Mn2CoAl/Fe2VAl constructed with (100) interface and Mn2CoAl/GaAs with (110) interface, and the latter is expected to possess long spin diffusion length. Inherited from the spin gapless feature of Mn2CoAl, a pronounced dip was observed around the Fermi level in the majority-spin DOS in both systems, suggesting fast transport of the low-density carriers.

cond-mat.mes-hall↗

arXiv2014

Magneto-transport properties of oriented Mn2CoAl films sputtered on thermally oxidized Si substrates

Spin gapless semiconductors are interesting novel class of materials by embracing both magnetism and semiconducting. Its potential application in future spintronics requires realization in thin film form. In this letter, we report a successful growth of spin gapless Mn2CoAl films on thermally oxidized Si substrates by magnetron sputtering deposition. The films deposited at 673K are well oriented to (001) direction and display a uniform-crystalline surface. Magnetotransport measurements on the oriented films reveal a semiconducting-like resistivity, small anomalous Hall conductivity and linear magnetoresistance (MR) representative of the transport signatures of spin gapless semiconductors. The magnetic properties of the films have also been investigated and compared to that of bulk Mn2CoAl, with small discrepancy induced by the composition deviation.

cond-mat.mtrl-sci↗

arXiv2014

High quality electron bunch generation with CO2-laser plasma accelerator

CO2 laser-driven electron acceleration is demonstrated with particle-in-cell simulation in low-density plasma. An intense CO2 laser pulse with long wavelength excites wakefield. The bubble behind it has a broad space to sustain a large amount of electrons before reaching its charge saturation limit. A transversely propagating inject pulse is used to induce and control the ambient electron injection. The accelerated electron bunch with total charge up to 10 nC and the average charge per energy interval of more than 0.6 nC/MeV are obtained. Plasma-based electron acceleration driven by intense CO2 laser provides a new potential way to generate high-charge electron bunch with low energy spread, which has broad applications, especially for X-ray generation by table-top FEL and bremsstrahlung.

physics.plasm-ph↗

arXiv2013

A new class of topological insulators from I-III-IV half-Heusler compounds with strong band inversion strength

In this paper, by first principle calculations, we investigate systematically the band topology of a new half-Heusler family with composition of I(A)-III(A)-IV(A). The results clearly show that many of the I-III-IV half-Heusler compounds are in fact promising to be topological insulator candidates. The characteristic feature of these new topological insulators is the naturally strong band inversion strength (up to -2eV) without containing heavy elements. Moreover, we found that both the band inversion strength and the topological insulating gap can be tailored through strain engineering, and therefore would be grown epitaxially in the form of films, and useful in spintronics and other applications.

cond-mat.mtrl-sci↗

arXiv2013

Crossover of magnetoresistance in the zerogap half-metallic Heusler alloy Fe2CoSi

This work reports on the band structure and magneto-transport investigations of the inverse Heusler compound Fe2CoSi. The first-principles calculations reveal that Fe2CoSi has a very peculiar band structure with a conducting property in the majority spin channel and a nearly zero bandgap in the minority spin channel. The synthesized Fe2CoSi sample shows a high-ordered inverse Heusler structure with a magnetic moment of 4.88 μB at 5 K and a high Curie temperature of 1038 K. With increasing temperature, a crossover from positive to negative magnetoresistance (MR) is observed. Complemented with the Hall effect measurements, we suggest the intriguing crossover of MR can be ascribed to the dominant spin carriers changing from the gapless minority spin channel to the majority spin channel at Fermi level.

cond-mat.mtrl-sci↗

arXiv2013

Giant magnetocaloric effect in isostructural MnNiGe-CoNiGe system by establishing a Curie-temperature window

An effective scheme of isostructural alloying was applied to establish a Curie-temperature window in isostructural MnNiGe-CoNiGe system. With the simultaneous accomplishment of decreasing structural-transition temperature and converting antiferromagnetic martensite to ferromagnetic state, a 200 K Curie-temperature window was established between Curie temperatures of austenite and martensite phases. In the window, a first-order magnetostructural transition between paramagnetic austenite and ferromagnetic martensite occurs with a sharp jump in magnetization, showing a magnetic entropy change as large as -40 J kg-1 K-1 in a 50 kOe field change. This giant magnetocaloric effect enables Mn1-xCoxNiGe to become a potential magnetic refrigerant.

cond-mat.mtrl-sci↗

arXiv2013

Topological Insulators in Hexagonal Wurtzite-type Binary Compounds

We propose new topological insulators in hexagonal wurtzite-type binary compounds based on the first principles calculations. It is found that two compounds AgI and AuI are three-dimensional topological insulators with a naturally opened band-gap at Fermi level. From band inversion mechanism point view, this new family of topological insulators is similar with HgTe, which has s (Gamma 6) - p (Gamma 8) band inversion. Our results strongly support that the spin-orbit coupling is not an essential factor to the band inversion mechanism; on the contrary, it is mainly responsible to the formation of a global band gap for the studied topological insulators. We further theoretically explore the feasibility of tuning the topological order of the studied compounds with two types of strains. The results show that the uniaxial strain can contribute extremely drastic impacts to the band inversion behavior, which provide an effective approach to induce topological phase transition.

cond-mat.mtrl-sci↗

arXiv2012

Generalized Slater-Pauling rule for the inverse Heusler compounds

We present extensive first-principles calculations on the inverse full-Heusler compounds having the chemical formula X$_2$YZ where (X = Sc, Ti, V, Cr or Mn), (Z = Al, Si or As) and the Y ranges from Ti to Zn. Several of these alloys are identified to be half-metallic magnets. We show that the appearance of half-metallicity is associated in all cases to a Slater-Pauling behavior of the total spin-magnetic moment. There are three different variants of this rule for the inverse Heusler alloys depending on the chemical type of the constituent transition-metal atoms. Simple arguments regarding the hybridization of the d-orbitals of neighboring atoms can explain these rules. We expect our results to trigger further experimental interest on this type of half-metallic Heusler compounds.

cond-mat.mtrl-sci↗