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Xander Peetroons

Publications and source records attributed to Xander Peetroons.

3 recordsLinked to original sources

Microkelvin resolution thermometry at the nanometre scale

Accurate temperature readings of transient events at the nanometer scale are challenging due to the low sensitivity of available sensors. Nanodiamonds containing nitrogen-vacancy (NV) centers have been used for nanoscale thermometry in complex environments, including inside living cells. However, their performance has been limited by short coherence times and low photon counts. In this work, we use isotopically-purified dual-NV nanodiamonds and a bespoke quantum sensing chip to showcase an order of magnitude improvement in temperature measurement sensitivity compared with previous reports. We demonstrate robust temperature measurements with an error of 682 $\mu$K, experimental sensitivities below 50 mK/$\surd \text{Hz}$ and a shot-noise limited sensitivity of 9.6 mK/$\surd \text{Hz}$. To confirm the utility of these high-performance nanothermometers, we quantify the temperature change induced by the thermometry measurement itself, specifically the optical excitation laser used to probe the NV spin state. In addition, we observe directly at the nanometre scale the transient heating caused by the exothermic mixing of dimethyl sulfoxide in water. Sub-millikelvin resolution and millikelvin sensitivity thermometry unlock the possibility of monitoring minute thermal fluctuations in living systems and assessing catalyst performance at the nanometre scale.

quant-ph

Valley enhanced Rabi frequency in n-type planar Silicon-MOS quantum dot

Electron spin resonance spectroscopy (ESR) of a single electron in planar Si-MOS quantum dot is reported in the vicinity of a valley level anti-crossing. A number of one and two-photon resonances are observed due to mixing of magnetic spin-flip and electric valley-flip transitions. This allows the reconstruction of the energy-level diagram of a four state system with two valley and two spin states. Near the anti-crossing, an enhancement of the Rabi frequency is observed. This is attributed to an electric-dipole transition activated by admixing of the upper energy level due to inter-valley spin coupling. The electric-dipole transition may be driven via capacitive coupling between the ESR antenna, and the confinement gate. To characterize spin-valley coupling responsible for the enhancement, we measure the anisotropy of the g-factor difference between the two valley states, the mean g-factor and the inter-valley spin coupling for both in and out-of-plane magnetic fields. The inter-valley spin coupling is strongly modulated by the direction of the B-field, and is strongest for out-of-plane B-field, consistent with an in-plane spin-valley field. In principle, this strong Electric dipole spin resonance (EDSR) effect could be utilized for fast all-electrical spin control in small-scale devices.

cond-mat.mes-hall

High Fidelity Qubit Control in a Natural Si-MOS Quantum Dot using a 300 mm Silicon on Insulator Wafer

We demonstrate high-fidelity single qubit control in a natural Si-MOS quantum dot fabricated in an industrial 300 mm wafer process on a silicon on insulator (SOI) wafer using electron spin resonance. A relatively high optimal Rabi frequency of 5 MHz is achieved, dynamically decoupling the electron spin from its 29-Si environment. Tracking the qubit frequency reduces the impact of low frequency noise in the qubit frequency and improves the $T^{Rabi}$ from 7 to 11 $\mu$s at a Rabi frequency of 5 MHz, resulting in Q-factors exceeding 50. Randomized benchmarking returns an average single gate control fidelity of 99.5 $\pm$ 0.3%. As a result of pulse-area calibration, this fidelity is limited by the Rabi Q-factor. These results show that a fast Rabi frequency, low charge noise, and a feedback protocol enable high fidelity in these Si-MOS devices, despite the low-frequency magnetic noise.

cond-mat.mes-hall