arXiv subjects

Xavier Gonze

Publications and source records attributed to Xavier Gonze.

At least 55 records · Page 3Linked to original sources

arXiv2018

Interatomic force constants including the DFT-D dispersion contribution

Grimme's DFT-D dispersion contribution to interatomic forces constants, required for the computation of the phonon band structures in density-functional perturbation theory, has been derived analytically. The implementation has then been validated with respect to frozen phonons, and applied on materials where weak cohesive forces play a major role i.e. argon, graphite, benzene. We show that these dispersive contributions have to be considered to properly reproduce the experimental vibrational properties of these materials, although the lattice parameter change, coming from the ground-state relaxation with the proper functional, induces the most important change with respect to a treatment without dispersion corrections. In the current implementation, the contribution of these dispersion corrections to the dynamical matrices (with a number of elements that is proportional to the square of the number of atoms) has only a cubic scaling with the number of atoms. In practice the overload with respect to density-functional calculations is small, making this methodology promising to study vibrational properties of large dispersive systems.

cond-mat.mtrl-sci↗

arXiv2018

First-principle study of paraelectric and ferroelectric CsH$_2$PO$_4$ including dispersion forces: stability and related vibrational, dielectric and elastic properties

Using density functional theory (DFT) and density functional perturbation theory (DFPT), we investigate the stability and response functions of CsH$_2$PO$_4$, a ferroelectric material at low temperature. This material cannot be described properly by the usual (semi-)local approximations within DFT. The long-range e$^-$-e$^-$ correlation needs to be properly taken into account, using, for instance, Grimme's DFT-D methods, as investigated in this work. We find that DFT-D3(BJ) performs the best for the members of the dihydrogenated alkali phosphate family (KH$_2$PO$_4$, RbH$_2$PO$_4$, CsH$_2$PO$_4$), leading to experimental lattice parameters reproduced with an average deviation of 0.5 %. With these DFT-D methods, the structural, dielectric, vibrational and mechanical properties of CsH$_2$PO$_4$ are globally in excellent agreement with the available experiments ($<$ 2% MAPE for Raman-active phonons). Our study suggests the possible existence of a new low-temperature phase for CsH$_2$PO$_4$, not yet reported experimentally. Finally, we report the implementation of DFT-D contributions to elastic constants within DFPT.

cond-mat.mtrl-sci↗

arXiv2018

Large phosphorene in-plane contraction induced by interlayer interactions in graphene-phosphorene heterostructures

Intralayer deformation in van der Waals (vdW) heterostructures is generally assumed to be negligible due to the weak nature of the interactions between the layers, especially when the interfaces are found incoherent. In the present work, graphene-phosphorene vdW-heterostructures are investigated with the Density Functional Theory (DFT). The challenge of treating nearly incommensurate (very large) supercell in DFT is bypassed by considering different energetic quantities in the grand canonical ensemble, alternative to the formation energy, in order to take into account the mismatch elastic contribution of the different layers. In the investigated heterostructures, it is found that phosphorene contracts by ~4% in the armchair direction when compared to its free-standing form. This large contraction leads to important changes in term of electronic properties, with the direct electronic optical transition of phosphorene becoming indirect in specific vdW-heterostructures. More generally, such a contraction indicates strong substrate effects in supported or encapsulated phosphorene -neglected hitherto- and paves the way to substrate-controlled stress- tronic in such 2D crystal. In addition, the stability of these vdW-heterostructures are investigated as a function of the rotation angle between the layers and as a function of the stacking composition. The alignment of the specific crystalline directions of graphene and phosphorene is found energetically favored. In parallel, several several models based on DFT-estimated quantities are presented; they allow notably a better understanding of the global mutual accommodation of 2D materials in their corresponding interfaces, that is predicted to be non-negligible even in the case of incommensurate interfaces.

cond-mat.mtrl-sci↗

arXiv2018

Convergence and pitfalls of density functional perturbation theory phonons calculations from a high-throughput perspective

The diffusion of large databases collecting different kind of material properties from high-throughput density functional theory calculations has opened new paths in the study of materials science thanks to data mining and machine learning techniques. Phonon calculations have already been employed successfully to predict materials properties and interpret experimental data, e.g. phase stability, ferroelectricity and Raman spectra, so their availability for a large set of materials will further increase the analytical and predictive power at hand. Moving to a larger scale with density functional perturbation calculations, however, requires the presence of a robust framework to handle this challenging task. In light of this, we automatized the phonon calculation and applied the result to the analysis of the convergence trends for several materials. This allowed to identify and tackle some common problems emerging in this kind of simulations and to lay out the basis to obtain reliable phonon band structures from high-throughput calculations, as well as optimizing the approach to standard phonon simulations.

cond-mat.mtrl-sci↗

arXiv2017

Incipient Metals: Functional Materials with a Unique Bonding Mechanism

While solid-state materials are commonly classified as covalent, ionic, or metallic, there are cases that defy these iconic bonding mechanisms. A prominent example is given by phase-change materials (PCMs) for data storage or photonics, which have recently been argued to show 'resonant' bonding; a clear definition of this mechanism, however, has been lacking until the present day. Here we show that these solids are clearly different from resonant bonding in the pi-orbital systems of benzene and graphene. Instead, they exhibit a unique mechanism between covalent and metallic bonding, which we call 'metavalent' bonding. The materials are on the verge of electron delocalization, which explains their exceptional property portfolio, and we therefore argue that they represent 'incipient metals'. This yields deeper, fundamental insight into the bonding nature of solid-state materials, and is expected to accelerate the discovery and design of new functional materials including PCMs and thermoelectrics.

cond-mat.mtrl-sci↗

arXiv2017

Quasiparticles and phonon satellites in spectral functions of semiconductors and insulators: Cumulants applied to full first principles theory and Fröhlich polaron

The electron-phonon interaction causes thermal and zero-point motion shifts of electron quasiparticle (QP) energies $ε_k(T)$. Other consequences of interactions, visible in angle-resolved photoemission spectroscopy (ARPES) experiments, are broadening of QP peaks and appearance of sidebands, contained in the electron spectral function $A(k,ω)=-{\Im m}G_R(k,ω) /π$, where $G_R$ is the retarded Green's function. Electronic structure codes (e.g. using density-functional theory) are now available that compute the shifts and start to address broadening and sidebands. Here we consider MgO and LiF, and determine their nonadiabatic Migdal self energy. The spectral function obtained from the Dyson equation makes errors in the weight and energy of the QP peak and the position and weight of the phonon-induced sidebands. Only one phonon satellite appears, with an unphysically large energy difference (larger than the highest phonon energy) with respect to the QP peak. By contrast, the spectral function from a cumulant treatment of the same self energy is physically better, giving a quite accurate QP energy and several satellites approximately spaced by the LO phonon energy. In particular, the positions of the QP peak and first satellite agree closely with those found for the Fröhlich Hamiltonian by Mishchenko $\textit{et al.}$ (2000) using diagrammatic Monte Carlo. We provide a detailed comparison between the first-principles MgO and LiF results and those of the Fröhlich Hamiltonian. Such an analysis applies widely to materials with infra-red active phonons. We also compare the retarded and time-ordered cumulant treatments: they are equivalent for the Fröhlich Hamiltonian, and only slightly differ in first-principles electron-phonon results for wide-band gap materials.

cond-mat.mtrl-sci↗

arXiv2017

First-principles Study of the Luminescence of Eu2+-doped Phosphors

The luminescence of fifteen representative Eu$^{2+}$-doped phosphors used for white-LED and scintillation applications is studied through a Constrained Density Functional Theory. Transition energies and Stokes shift are deduced from differences of total energies between the ground and excited states of the systems, in the absorption and emission geometries. The general applicability of such methodology is first assessed: for this representative set, the calculated absolute error with respect to experiment on absorption and emission energies is within 0.3 eV. This set of compounds covers a wide range of transition energies that extents from 1.7 to 3.5 eV. The information gained from the relaxed geometries and total energies is further used to evaluate the thermal barrier for the $4f-5d$ crossover, the full width at half-maximum of the emission spectrum and the temperature shift of the emission peak, using a one-dimensional configuration-coordinate model. The former results indicate that the $4f-5d$ crossover cannot be the dominant mechanism for the thermal quenching behavior of Eu$^{2+}$-doped phosphors and the latter results are compared to available experimental data and yield a 30$\%$ mean absolute relative error. Finally, a semi-empirical model used previously for Ce$^{3+}$-doped hosts is adapted to Eu$^{2+}$-doped hosts and gives the absorption and emission energies within 0.9 eV of experiment, underperforming compared to the first-principles calculation.

cond-mat.mtrl-sci↗

arXiv2017

Assessment of First-Principles and Semiempirical Methodologies for Absorption and Emission Energies of Ce$^{3+}$-Doped Luminescent Materials

In search of a reliable methodology for the prediction of light absorption and emission of Ce$^{3+}$-doped luminescent materials, 13 representative materials are studied with first-principles and semiempirical approaches. In the first-principles approach, that combines constrained density-functional theory and $Δ$SCF, the atomic positions are obtained for both ground and excited states of the Ce$^{3+}$ ion. The structural information is fed into Dorenbos' semiempirical model. Absorption and emission energies are calculated with both methods and compared with experiment. The first-principles approach matches experiment within 0.3 eV, with two exceptions at 0.5 eV. In contrast, the semiempirical approach does not perform as well (usually more than 0.5 eV error). The general applicability of the present first-principles scheme, with an encouraging predictive power, opens a novel avenue for crystal site engineering and high-throughput search for new phosphors and scintillators.

cond-mat.mtrl-sci↗

arXiv2017

First-principles study of Ce$^{3+}$ doped lanthanum silicate nitride phosphors: Neutral excitation, Stokes shift, and luminescent center identification

We study from first principles two lanthanum silicate nitride compounds, LaSi$_{3}$N$_{5}$ and La$_{3}$Si$_{6}$N$_{11}$, pristine as well as doped with Ce$^{3+}$ ion, in view of explaining their different emission color, and characterising the luminescent center. The electronic structures of the two undoped hosts are similar, and do not give a hint to quantitatively describe such difference. The $4f\rightarrow 5d$ neutral excitation of the Ce$^{3+}$ ions is simulated through a constrained density-functional theory method coupled with a $Δ$SCF analysis of total energies, yielding absorption energies. Afterwards, atomic positions in the excited state are relaxed, yielding the emission energies and Stokes shifts. Based on these results, the luminescent centers in LaSi$_{3}$N$_{5}$:Ce and La$_{3}$Si$_{6}$N$_{11}$:Ce are identified. The agreement with the experimental data for the computed quantities is quite reasonable and explains the different color of the emitted light. Also, the Stokes shifts are obtained within 20\% difference relative to experimental data.

cond-mat.mtrl-sci↗

arXiv2017

Ab Initio Approach to Second-order Resonant Raman Scattering Including Exciton-Phonon Interaction

Raman spectra obtained by the inelastic scattering of light by crystalline solids contain contributions from first-order vibrational processes (e.g. the emission or absorption of one phonon, a quantum of vibration) as well as higher-order processes with at least two phonons being involved. At second order, coupling with the entire phonon spectrum induces a response that may strongly depend on the excitation energy, and reflects complex processes more difficult to interpret. In particular, excitons (i.e. bound electron-hole pairs) may enhance the absorption and emission of light, and couple strongly with phonons in resonance conditions. We design and implement a first-principles methodology to compute second-order Raman scattering, incorporating dielectric responses and phonon eigenstates obtained from density-functional theory and many-body theory. We demonstrate our approach for the case of silicon, relating frequency-dependent relative Raman intensities, that are in excellent agreement with experiment, to different vibrations and regions of the Brillouin zone. We show that exciton-phonon coupling, computed from first principles, indeed strongly affect the spectrum in resonance conditions. The ability to analyze second-order Raman spectra thus provides direct insight into this interaction.

cond-mat.mtrl-sci↗

arXiv2017

Precise effective masses from density functional perturbation theory

The knowledge of effective masses is a key ingredient to analyze numerous properties of semiconductors, like carrier mobilities, (magneto-)transport properties, or band extrema characteristics yielding carrier densities and density of states. Currently, these masses are usually calculated using finite-difference estimation of density functional theory (DFT) electronic band curvatures. However, finite differences require an additional convergence study and are prone to numerical noise. Moreover, the concept of effective mass breaks down at degenerate band extrema. We assess the former limitation by developing a method that allows to obtain the Hessian of DFT bands directly, using density functional perturbation theory (DFPT). Then, we solve the latter issue by adapting the concept of `transport equivalent effective mass' to the $\vec{k} \cdot \hat{\vec{p}}$ framework. The numerical noise inherent to finite-difference methods is thus eliminated, along with the associated convergence study. The resulting method is therefore more general, more robust and simpler to use, which makes it especially appropriate for high-throughput computing. After validating the developed techniques, we apply them to the study of silicon, graphane, and arsenic. The formalism is implemented into the ABINIT software and supports the norm-conserving pseudopotential approach, the projector augmented-wave method, and the inclusion of spin-orbit coupling. The derived expressions also apply to the ultrasoft pseudopotential method.

cond-mat.mtrl-sci↗

arXiv2017

Origin of the Counterintuitive Dynamic Charge in the Transition-Metal Dichalcogenides

We investigate the chemical bonding characteristics of the transition metal dichalcogenides based on their static and dynamical atomic charges within Density Functional Theory. The dynamical charges of the trigonal transition metal dichalcogenides are anomalously large, while in their hexagonal counterparts, their sign is even counterintuitive i.e. the transition metal takes the negative charge. This phenomenon cannot be understood simply in terms of a change in the static atomic charge as it results from a local change of polarization. We present our theoretical understanding of these phenomena based on the perturbative response of the system to a static electric field and by investigating the hybridization of the molecular orbitals near the Fermi level. Furthermore, we establish a link between the sign of the Born effective charge and the $π$-backbonding in organic chemistry and propose an experimental procedure to verify the calculated sign of the dynamical charge in the transition metal dichalcogenides.

cond-mat.mtrl-sci↗

arXiv2016

Temperature evolution of the band-gap in BiFeO3 traced by resonant Raman scattering

Knowledge of the electronic band structure of multiferroic oxides, crucial for the understanding and tuning of photo-induced effects, remains very limited even in the model and thoroughly studied BiFeO3. Here, we investigate the electronic band structure of BiFeO3 using Raman scattering with twelve different excitation wavelengths ranging from the blue to the near infrared. We show that resonant Raman signatures can be assigned to direct and indirect electronic transitions, as well as in-gap electronic levels, most likely associated to oxygen vacancies. Their temperature evolution establishes that the remarkable and intriguing variation of the optical band-gap can be related to the shrinking of an indirect electronic band-gap, while the energies for direct electronic transitions remains nearly temperature independent.

cond-mat.mtrl-sci↗

arXiv2016

Efficient On-the-Fly Interpolation Technique for Bethe-Salpeter Calculations of Optical Spectra

The Bethe-Salpeter formalism represents the most accurate method available nowadays for computing neutral excitation energies and optical spectra of crystalline systems from first principles. Bethe-Salpeter calculations yield very good agreement with experiment but are notoriously difficult to converge with respect to the sampling of the electronic wavevectors. Well-converged spectra therefore require significant computational and memory resources, even by today's standards. These bottlenecks hinder the investigation of systems of great technological interest. They are also barriers to the study of derived quantities like piezoreflectance, thermoreflectance or resonant Raman intensities. We present a new methodology that decreases the workload needed to reach a given accuracy. It is based on a double-grid on-the-fly interpolation within the Brillouin zone, combined with the Lanczos algorithm. It achieves significant speed-up and reduction of memory requirements. The technique is benchmarked in terms of accuracy on silicon, gallium arsenide and lithium fluoride. The scaling of the performance of the method as a function of the Brillouin Zone point density is much better than a conventional implementation. We also compare our method with other similar techniques proposed in the literature.

cond-mat.mtrl-sci↗

arXiv2015

Understanding thermal quenching of photoluminescence from first principles

Understanding the physical mechanisms behind thermal effects in phosphors is crucial for white light-emitting diodes (WLEDs) applications, as thermal quenching of their photoluminescence might render them useless. The two chemically close Eu-doped \Hosta and \Hostb crystals are typical phosphors studied for WLEDs. The first one sustains efficient light emission at 100$^{\circ}$C while the second one emits very little light at that temperature. Herein, we analyze from first principles their electronic structure and atomic geometry, before and after absorption/emission of light. Our results, in which the Eu-5d levels are obtained inside the band gap thanks to the removal of an electron from the 4f$^7$ shell, attributes the above-mentioned experimental difference to an auto-ionization model of the thermal quenching, based on the energy difference between Eu$_{\text{5d}}$ and the conduction band minimum. For both Eu-doped phosphors, we identify the luminescent center, and we show that the atomic relaxation in their excited state is of crucial importance for a realistic description of the emission characteristics.

cond-mat.mtrl-sci↗

arXiv2015

Dynamical and anharmonic effects on the electron-phonon coupling and the zero-point renormalization of the electronic structure

The renormalization of the band structure at zero temperature due to electron-phonon coupling is investigated in diamond, BN, LiF and MgO crystals. We implement a dynamical scheme to compute the frequency-dependent self-energy and the resulting quasiparticle electronic structure. Our calculations reveal the presence of a satellite band below the Fermi level of LiF and MgO. We show that the renormalization factor (Z), which is neglected in the adiabatic approximation, can reduce the zero-point renormalization (ZPR) by as much as 40%. Anharmonic effects in the renormalized eigenvalues at finite atomic displacements are explored with the frozen-phonon method. We use a non-perturbative expression for the ZPR, going beyond the Allen-Heine-Cardona theory. Our results indicate that high-order electron-phonon coupling terms contribute significantly to the zero-point renormalization for certain materials.

cond-mat.mtrl-sci↗

arXiv2015

A many-body perturbation theory approach to the electron-phonon interaction with density-functional theory as a starting point

The electron-phonon interaction plays a crucial role in many fields of physics and chemistry. Nevertheless, its actual calculation by means of modern many-body perturbation theory is weakened by the use of model Hamiltonians that are based on parameters difficult to extract from the experiments. Such shortcoming can be bypassed by using density-functional theory to evaluate the electron-phonon scattering amplitudes, phonon frequencies and electronic bare energies. In this work, we discuss how a consistent many-body diagrammatic expansion can be constructed on top of density-functional theory. In that context, the role played by screening and self-consistency when all the components of the electron-nucleus and nucleus-nucleus interactions are taken into account is paramount. A way to avoid over-screening is notably presented. Finally, we derive cancellations rules as well as internal consistency constraints in order to draw a clear, sound and practical scheme to merge many-body perturbation and density-functional theory.

cond-mat.mtrl-sci↗

arXiv2015

Temperature dependence of the electronic structure of semiconductors and insulators

The renormalization of electronic eigenenergies due to electron-phonon coupling is sizable in many materials with light atoms. This effect, often neglected in ab-initio calculations, can be computed using the perturbation-based Allen-Heine-Cardona theory in the adiabatic or non-adiabatic harmonic approximation. After a short description of the numerous recent progresses in this field, and a brief overview of the theory, we focus on the issue of phonon wavevector sampling convergence, until now poorly understood. Indeed, the renormalization is obtained numerically through a q-point sampling inside the BZ. For q-points close to G, we show that a divergence due to non-zero Born effective charge appears in the electron-phonon matrix elements, leading to a divergence of the integral over the BZ for band extrema. Although it should vanish for non-polar materials, unphysical residual Born effective charges are usually present in ab-initio calculations. Here, we propose a solution that improves the coupled q-point convergence dramatically. For polar materials, the problem is more severe: the divergence of the integral does not disappear in the adiabatic harmonic approximation, but only in the non-adiabatic harmonic approximation. In all cases, we study in detail the convergence behavior of the renormalization as the q-point sampling goes to infinity and the imaginary broadening parameter goes to zero. This allows extrapolation, thus enabling a systematic way to converge the renormalization for both polar and non-polar materials. Finally, the adiabatic and non-adiabatic theory, with corrections for the divergence problem, are applied to the study of five semiconductors and insulators: a-AlN, b-AlN, BN, diamond and silicon. For these five materials, we present the zero-point renormalization, temperature dependence, phonon-induced lifetime broadening and the renormalized electronic bandstructure.

cond-mat.mtrl-sci↗