Cryogenic piezoelectric effects in thin film strontium titanate devices
Next generation quantum technologies will need to rely on efficient transduction between electrical, optical, and mechanical quantum degrees of freedom to generate large-scale entanglement over large distances. The performance of such transducers is fundamentally limited by the cryogenic properties of the underlying materials. Here, we demonstrate that engineering strain in ferroelectric thin-film strontium titanate ($\mathrm{SrTiO_3}$) not only results in an exceptionally large Pockels coefficient, but also in a robust linear piezoelectric response at cryogenic temperatures, surpassing previous thin-film benchmarks. We measure piezoelectric tensor elements of $d_{15} = 151.8 \pm 1.5$ pm/V and $d_{33} = 54.8 \pm 4$ pm/V, and an effective photoelastic coefficient of $p_{\mathrm{eff}}$ = 0.56 at 5~K. Utilizing these enhanced properties, we demonstrate the first $\mathrm{SrTiO_3}$-on-oxide acousto-optic modulator with a voltage-length product ($V_{\pi}L$) of $0.874 \pm 0.084$ V cm, outperforming state-of-the-art unreleased modulators that typically feature a $V_{\pi}L$ of a few V cm. Our results establish thin-film $\mathrm{SrTiO_3}$ as a promising material system for integrated quantum photonics operating at cryogenic temperatures.