arXiv subjects

Xavier Roy

Publications and source records attributed to Xavier Roy.

At least 55 records · Page 3Linked to original sources

arXiv2023

Electrostatically controlled spin polarization in Graphene-CrSBr magnetic proximity heterostructures

The magnetic proximity effect can induce a spin dependent exchange shift in the band structure of graphene. This produces a magnetization and a spin polarization of the electron/hole carriers in this material, paving the way for its use as an active component in spintronics devices. The electrostatic control of this spin polarization in graphene has however never been demonstrated so far. We show that interfacing graphene with the van der Waals antiferromagnet CrSBr results in an unconventional manifestation of the quantum Hall effect, which can be attributed to the presence of counterflowing spin-polarized edge channels originating from the spin-dependent exchange shift in graphene. We extract an exchange shift ranging from 27 to 32 meV, and show that it also produces an electrostatically tunable spin polarization of the electron/hole carriers in graphene ranging from -50 % to +69 % in the absence of a magnetic field. This proof of principle provides a starting point for the use of graphene as an electrostatically tunable source of spin current and could allow this system to generate a large magnetoresistance in gate tunable spin valve devices.

cond-mat.mes-hall↗

arXiv2023

Interplay between local moment and itinerant magnetism in the layered metallic antiferromagnet TaFe$_{1.14}$Te$_3$

Two-dimensional (2D) antiferromagnets have garnered considerable interest for the next generation of functional spintronics. However, many available bulk materials from which 2D antiferromagnets are isolated are limited by their sensitivity to air, low ordering temperatures, and insulating transport properties. TaFe$_{1+y}$Te$_3$ offers unique opportunities to address these challenges with increased air stability, metallic transport properties, and robust antiferromagnetic order. Here, we synthesize TaFe$_{1+y}$Te$_3$ ($y$ = 0.14), identify its structural, magnetic, and electronic properties, and elucidate the relationships between them. Axial-dependent high-field magnetization measurements on TaFe$_{1.14}$Te$_3$ reveal saturation magnetic fields ranging between 27-30 T with a saturation magnetic moment of 2.05-2.12 $μ_B$. Magnetotransport measurements confirm TaFe$_{1.14}$Te$_3$ is metallic with strong coupling between magnetic order and electronic transport. Angle-resolved photoemission spectroscopy measurements across the magnetic transition uncover a complex interplay between itinerant electrons and local magnetic moments that drives the magnetic transition. We further demonstrate the ability to isolate few-layer sheets of TaFe$_{1.14}$Te$_3$ through mechanical exfoliation, establishing TaFe$_{1.14}$Te$_3$ as a potential platform for 2D spintronics based on metallic layered antiferromagnets.

cond-mat.mtrl-sci↗

arXiv2023

Room temperature wavelike exciton transport in a van der Waals superatomic semiconductor

The transport of energy and information in semiconductors is limited by scattering between electronic carriers and lattice phonons, resulting in diffusive and lossy transport that curtails all semiconductor technologies. Using Re6Se8Cl2, a van der Waals (vdW) superatomic semiconductor, we demonstrate the formation of acoustic exciton-polarons, an electronic quasiparticle shielded from phonon scattering. We directly image polaron transport in Re6Se8Cl2 at room temperature and reveal quasi-ballistic, wavelike propagation sustained for nanoseconds and several microns. Shielded polaron transport leads to electronic energy propagation orders of magnitude greater than in other vdW semiconductors, exceeding even silicon over nanoseconds. We propose that, counterintuitively, quasi-flat electronic bands and strong exciton-acoustic phonon coupling are together responsible for the remarkable transport properties of Re6Se8Cl2, establishing a new path to ballistic room-temperature semiconductors.

cond-mat.mtrl-sci↗

arXiv2023

Exchange bias between van der Waals materials: tilted magnetic states and field-free spin-orbit-torque switching

Magnetic van der Waals heterostructures provide a unique platform to study magnetism and spintronics device concepts in the two-dimensional limit. Here, we report studies of exchange bias from the van der Waals antiferromagnet CrSBr acting on the van der Waals ferromagnet Fe3GeTe2 (FGT). The orientation of the exchange bias is along the in-plane easy axis of CrSBr, perpendicular to the out-of-plane anisotropy of the FGT, inducing a strongly tilted magnetic configuration in the FGT. Furthermore, the in-plane exchange bias provides sufficient symmetry breaking to allow deterministic spin-orbit torque switching of the FGT in CrSBr/FGT/Pt samples at zero applied magnetic field. A minimum thickness of the CrSBr greater than 10 nm is needed to provide a non-zero exchange bias at 30 K.

cond-mat.mes-hall↗

arXiv2023

Strain-programmable van der Waals magnetic tunnel junctions

The magnetic tunnel junction (MTJ) is a backbone device for spintronics. Realizing next generation energy efficient MTJs will require operating mechanisms beyond the standard means of applying magnetic fields or large electrical currents. Here, we demonstrate a new concept for programmable MTJ operation via strain control of the magnetic states of CrSBr, a layered antiferromagnetic semiconductor used as the tunnel barrier. Switching the CrSBr from antiferromagnetic to ferromagnetic order generates a giant tunneling magnetoresistance ratio without external magnetic field at temperatures up to ~ 140 K. When the static strain is set near the phase transition, applying small strain pulses leads to active flipping of layer magnetization with controlled layer number and thus magnetoresistance states. Further, finely adjusting the static strain to a critical value turns on stochastic switching between metastable states, with a strain-tunable sigmoidal response curve akin to the stochastic binary neuron. Our results highlight the potential of strain-programmable van der Waals MTJs towards spintronic applications, such as magnetic memory, random number generation, and probabilistic and neuromorphic computing.

cond-mat.mes-hall↗

arXiv2022

Designing magnetic properties in CrSBr through hydrostatic pressure and ligand substitution

The ability to control magnetic properties of materials is crucial for fundamental research and underpins many information technologies. In this context, two-dimensional materials are a particularly exciting platform due to their high degree of tunability and ease of implementation into nanoscale devices. Here we report two approaches for manipulating the A-type antiferromagnetic properties of the layered semiconductor CrSBr through hydrostatic pressure and ligand substitution. Hydrostatic pressure compresses the unit cell, increasing the interlayer exchange energy while lowering the Néel temperature. Ligand substitution, realized synthetically through Cl alloying, anisotropically compresses the unit cell and suppresses the Cr-halogen covalency, reducing the magnetocrystalline anisotropy energy and decreasing the Néel temperature. A detailed structural analysis combined with first-principles calculations reveal that alterations in the magnetic properties are intricately related to changes in direct Cr-Cr exchange interactions and the Cr-anion superexchange pathways. Further, we demonstrate that Cl alloying enables chemical tuning of the interlayer coupling from antiferromagnetic to ferromagnetic, which is unique amongst known two-dimensional magnets. The magnetic tunability, combined with a high ordering temperature, chemical stability, and functional semiconducting properties, make CrSBr an ideal candidate for pre- and post-synthetic design of magnetism in two-dimensional materials.

cond-mat.mtrl-sci↗

arXiv2022

Tunable Exciton-Hybridized Magnon Interactions in a Layered Semiconductor

The interaction between distinct excitations in solids is of both fundamental interest and technological importance. One example of such interactions is coupling between an exciton, a Coulomb bound electron-hole pair, and a magnon, a collective spin excitation. The recent emergence of van der Waals magnetic semiconductors provides a powerful platform for exploring these exciton-magnon interactions and their fundamental properties, such as strong correlation, as well as their photo-spintronic and quantum transduction applications. Here we demonstrate precise control of coherent exciton-magnon interactions in the layered magnetic semiconductor CrSBr. We show that by controlling the direction of applied magnetic fields relative to the crystal axes, and thus the rotational symmetry of the magnetic system, we can tune not only the exciton coupling to the bright magnon, but also to an optically dark mode via magnon hybridization. The exciton-magnon coupling and associated magnon dispersion curves can be further modulated by applying a uniaxial strain. At the critical strain, a dispersionless dark magnon band emerges. Our results demonstrate unprecedented control of the opto-mechanical-magnonic coupling, and a step towards the predictable and controllable implementation of hybrid quantum magnonics.

cond-mat.mes-hall↗

arXiv2022

Anisotropic Gigahertz Antiferromagnetic Resonances of the Easy-Axis van der Waals Antiferromagnet CrSBr

We report measurements of antiferromagnetic resonances in the van der Waals easy-axis antiferromagnet CrSBr. The interlayer exchange field and magnetocrystalline anisotropy fields are comparable to laboratory magnetic fields, allowing a rich variety of gigahertz-frequency dynamical modes to be accessed. By mapping the resonance frequencies as a function of the magnitude and angle of applied magnetic field we identify the different regimes of antiferromagnetic dynamics. The spectra show good agreement with a Landau-Lifshitz model for two antiferromagnetically-coupled sublattices, accounting for inter-layer exchange and triaxial magnetic anisotropy. Fits allow us to quantify the parameters governing the magnetic dynamics: at 5 K, the interlayer exchange field is $μ_0 H_E =$ 0.395(2) T, and the hard and intermediate-axis anisotropy parameters are $μ_0 H_c =$ 1.30(2) T and $μ_0 H_a =$ 0.383(7) T. The existence of within-plane anisotropy makes it possible to control the degree of hybridization between the antiferromagnetic resonances using an in-plane magnetic field.

cond-mat.mtrl-sci↗

arXiv2022

Charge carrier coupling to the soft phonon mode in a ferroelectric semiconductor

Many crystalline solids possess strongly anharmonic soft phonon modes characterized by diminishing frequency as temperature approaches a critical point associated with a symmetry breaking phase transition. While electron-soft phonon coupling can introduce unique scattering channels for charge carriers in ferroelectrics, recent studies on the non-ferroelectric lead halide perovskites have also suggested the central role of anharmonic phonons bearing resemblance to soft modes in charge carrier screening. Here we apply coherent phonon spectroscopy to directly study electron coupling to the soft transverse optical (TO) phonon mode in a ferroelectric semiconductor SbSI. Photo-generated charge carriers in SbSI are found to be exceptionally long lived and are associated with a transient electro-optical effect that can be explained by interactions between charge carriers and thermally stimulated soft-phonon excitations. These results provide strong evidence for the role of electron-soft phonon coupling in the efficient screening of charge carriers and in reducing charge recombination rates, both desirable properties for optoelectronics.

cond-mat.mtrl-sci↗

arXiv2022

Exciton-Coupled Coherent Magnons in a 2D Semiconductor

Two-dimensional (2D) magnetic semiconductors feature both tightly-bound excitons with large oscillator strength and potentially long-lived coherent magnons due to the presence of bandgap and spatial confinement. While magnons and excitons are energetically mismatched by orders of magnitude, their coupling can lead to efficient optical access to spin information. Here we report strong magnon-exciton coupling in the 2D van der Waals (vdW) antiferromagnetic (AFM) semiconductor CrSBr. Coherent magnons launched by above-gap excitation modulate the interlayer hybridization, which leads to dynamic modulation of excitonic energies. Time-resolved exciton sensing reveals magnons that can coherently travel beyond 7 micrometer, with coherence time above 5 ns. We observe this exciton-coupled coherent magnons in both even and odd number of layers, with and without compensated magnetization, down to the bilayer limit. Given the versatility of vdW heterostructures, these coherent 2D magnons may be basis for optically accessible magnonics and quantum interconnects.

cond-mat.mes-hall↗

arXiv2022

Towards fully two-dimensional spintronic devices

Within the field of spintronics major efforts are directed towards developing applications for spin-based transport devices made fully out of two-dimensional (2D) materials. In this work we present an experimental realization of a spin-valve device where the generation of the spin signal is exclusively attributed to the spin-dependent conductivity of the magnetic graphene resulting from the proximity of an interlayer antiferromagnet, CrSBr. We clearly demonstrate that the usage of the conventional 3D magnetic contacts, that are commonly air-sensitive and incompatible with practical technologies, can be fully avoided when graphene/CrSBr heterostructures are employed. Moreover, apart from providing exceptionally long spin relaxation length, the usage of graphene for both generation and transport of the spin allows to automatically avoid the conductivity mismatch between the source and the channel circuits that has to be considered when using conventional low-resistive contacts. Our results address a necessary step in the engineering of spintronic circuitry out of layered materials and precede further developments in the area of complex spin-logic devices. Moreover, we introduce a fabrication procedure where we designed and implemented a recipe for the preparation of electrodes via a damage-free technique that offers an immediate advantage in the fields of air-sensitive and delicate organic materials.

cond-mat.mes-hall↗

arXiv2021

Visualizing Atomically-Layered Magnetism in CrSBr

Two-dimensional (2D) materials can host stable, long-range magnetic phases in the presence of underlying magnetic anisotropy. The ability to realize the full potential of 2D magnets necessitates systematic investigation of the role of individual atomic layers and nanoscale inhomogeneity ($\textit{i.e.}$, strain) on the emergence and stability of both intra- and interlayer magnetic phases. Here, we report multifaceted spatial-dependent magnetism in few-layer CrSBr using magnetic force microscopy (MFM) and Monte Carlo-based magnetic simulations. We perform nanoscale visualization of the magnetic sheet susceptibility from raw MFM data and force-distance curves, revealing a characteristic onset of both intra- and interlayer magnetic correlations as a function of temperature and layer-thickness. We demonstrate that the presence of a single uncompensated layer in odd-layer terraces significantly reduces the stability of the low-temperature antiferromagnetic (AFM) phase and gives rise to multiple coexisting magnetic ground states at temperatures close to the bulk Néel temperature ($\textit{T}$$_N$). Furthermore, the AFM phase can be reliably suppressed using modest fields (~300 Oe) from the MFM probe, behaving as a nanoscale magnetic switch. Our prototypical study of few-layer CrSBr demonstrates the critical role of layer parity on field-tunable 2D magnetism and provides vital design criteria for future nanoscale magnetic devices. Moreover, we provide a roadmap for using MFM for nano-magnetometry of 2D materials, despite the ubiquitous absence of bulk zero-field magnetism in magnetized sheets.

cond-mat.mtrl-sci↗

arXiv2021

Hidden low-temperature magnetic order revealed through magnetotransport in monolayer CrSBr

Magnetic semiconductors are a powerful platform for understanding, utilizing and tuning the interplay between magnetic order and electronic transport. Compared to bulk crystals, two-dimensional magnetic semiconductors have greater tunability, as illustrated by the gate modulation of magnetism in exfoliated CrI$_3$ and Cr$_2$Ge$_2$Te$_6$, but their electrically insulating properties limit their utility in devices. Here we report the simultaneous electrostatic and magnetic control of electronic transport in atomically-thin CrSBr, an A-type antiferromagnetic semiconductor. Through magnetotransport measurements, we find that spin-flip scattering from the interlayer antiferromagnetic configuration of multilayer flakes results in giant negative magnetoresistance. Conversely, magnetoresistance of the ferromagnetic monolayer CrSBr vanishes below the Curie temperature. A second transition ascribed to the ferromagnetic ordering of magnetic defects manifests in a large positive magnetoresistance in the monolayer and a sudden increase of the bulk magnetic susceptibility. We demonstrate this magnetoresistance is tunable with an electrostatic gate, revealing that the ferromagnetic coupling of defects is carrier mediated.

cond-mat.mes-hall↗

arXiv2021

Interlayer Electronic Coupling on Demand in a 2D Magnetic Semiconductor

When monolayers of two-dimensional (2D) materials are stacked into van der Waals structures, interlayer electronic coupling can introduce entirely new properties, as exemplified by recent discoveries of moiré bands that host highly correlated electronic states and quantum dot-like interlayer exciton lattices. Here we show the magnetic control of interlayer electronic coupling, as manifested in tunable excitonic transitions, in an A-type antiferromagnetic 2D semiconductor CrSBr. Excitonic transitions in bilayer and above can be drastically changed when the magnetic order is switched from layered antiferromagnetic to the field-induced ferromagnetic state, an effect attributed to the spin-allowed interlayer hybridization of electron and hole orbitals in the latter, as revealed by GW-BSE calculations. Our work uncovers a magnetic approach to engineer electronic and excitonic effects in layered magnetic semiconductors.

cond-mat.mes-hall↗

arXiv2020

Electrical and Thermal Generation of Spin Currents by Magnetic Graphene

The demand for compact, high-speed and energy-saving circuitry urges higher efficiency of spintronic devices that can offer a viable alternative for the current electronics. The route towards this goal suggests implementing two-dimensional (2D) materials that provide large spin polarization of charge current together with the long-distance transfer of the spin information. Here, for the first time, we experimentally demonstrate a large spin polarization of the graphene conductivity ($\approx 14\%$) arising from a strong induced exchange interaction in proximity to a 2D layered antiferromagnetic. The strong coupling of charge and spin currents in graphene with high efficiency of spin current generation, comparable to that of metallic ferromagnets, together with the observation of spin-dependent Seebeck and anomalous Hall effects, all consistently confirm the magnetic nature of graphene. The high sensitivity of spin transport in graphene to the magnetization of the outermost layer of the adjacent interlayer antiferromagnet, also provides a tool to read out a single magnetic sub-lattice. The first time observations of the electrical and thermal generation of spin currents by magnetic graphene suggest it as the ultimate building block for ultra-thin magnetic memory and sensory devices, combining gate tunable spin-dependent conductivity, long-distance spin transport and spin-orbit coupling all in a single 2D material.

cond-mat.mes-hall↗

arXiv2020

Magnetic Order and Symmetry in the 2D Semiconductor CrSBr

The recent discovery of two-dimensional (2D) magnets offers unique opportunities for the experimental exploration of low-dimensional magnetism4 and the magnetic proximity effects, and for the development of novel magnetoelectric, magnetooptic and spintronic devices. These advancements call for 2D materials with diverse magnetic structures as well as effective probes for their magnetic symmetries, which is key to understanding intralayer magnetic order and interlayer magnetic coupling. Here we apply second harmonic generation (SHG), a technique acutely sensitive to symmetry breaking, to probe the magnetic structure of a new 2D magnetic semiconductor, CrSBr. We find that CrSBr monolayers are ferromagnetically ordered below 146 K, an observation enabled by the discovery of a giant magnetic dipole SHG effect in the centrosymmetric 2D structure. In multilayers, the ferromagnetic monolayers are coupled antiferromagnetically, with the Néel temperature notably increasing with decreasing layer number. The magnetic structure of CrSBr, comprising spins co-aligned in-plane with rectangular unit cell, differs markedly from the prototypical 2D hexagonal magnets CrI3 and Cr2Ge2Te6 with out-of-plane moments. Moreover, our SHG analysis suggests that the order parameters of the ferromagnetic monolayer and the antiferromagnetic bilayer are the magnetic dipole and the magnetic toroidal moments, respectively. These findings establish CrSBr as an exciting 2D magnetic semiconductor and SHG as a powerful tool to probe 2D magnetic symmetry, opening the door to the exploration of coupling between magnetic order and excitonic/electronic properties, as well as the magnetic toroidal moment, in a broad range of applications.

cond-mat.mtrl-sci↗

arXiv2020

Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr

The recent discovery of magnetism within the family of exfoliatable van der Waals (vdW) compounds has attracted considerable interest in these materials for both fundamental research and technological applications. However current vdW magnets are limited by their extreme sensitivity to air, low ordering temperatures, and poor charge transport properties. Here we report the magnetic and electronic properties of CrSBr, an air-stable vdW antiferromagnetic semiconductor that readily cleaves perpendicular to the stacking axis. Below its Néel temperature, $T_N = 132 \pm 1$ K, CrSBr adopts an A-type antiferromagnetic structure with each individual layer ferromagnetically ordered internally and the layers coupled antiferromagnetically along the stacking direction. Scanning tunneling spectroscopy and photoluminescence (PL) reveal that the electronic gap is $Δ_E = 1.5 \pm 0.2$ eV with a corresponding PL peak centered at $1.25 \pm 0.07$ eV. Using magnetotransport measurements, we demonstrate strong coupling between magnetic order and transport properties in CrSBr, leading to a large negative magnetoresistance response that is unique amongst vdW materials. These findings establish CrSBr as a promising material platform for increasing the applicability of vdW magnets to the field of spin-based electronics.

cond-mat.mtrl-sci↗

arXiv2020

On average properties of inhomogeneous fluids in general relativity III: general fluid cosmologies

We investigate effective equations governing the volume expansion of spatially averaged portions of inhomogeneous cosmologies in spacetimes filled with an arbitrary fluid. This work is a follow-up to previous studies focused on irrotational dust models (Paper I) and irrotational perfect fluids (Paper II) in flow-orthogonal foliations of spacetime. It complements them by considering arbitrary foliations, arbitrary lapse and shift, and by allowing for a tilted fluid flow with vorticity. As for the first studies, the propagation of the spatial averaging domain is chosen to follow the congruence of the fluid, which avoids unphysical dependencies in the averaged system that is obtained. We present two different averaging schemes and corresponding systems of averaged evolution equations providing generalizations of Papers I and II. The first one retains the averaging operator used in several other generalizations found in the literature. We extensively discuss relations to these formalisms and pinpoint limitations, in particular regarding rest mass conservation on the averaging domain. The alternative averaging scheme that we subsequently introduce follows the spirit of Papers I and II and focuses on the fluid flow and the associated 1+3 threading congruence, used jointly with the 3+1 foliation that builds the surfaces of averaging. This results in compact averaged equations with a minimal number of cosmological backreaction terms. We highlight that this system becomes especially transparent when applied to a natural class of foliations which have constant fluid proper time slices.

gr-qc↗