Searcharxiv⌕ Search

arXiv subjects

Xian Wei Chua

Publications and source records attributed to Xian Wei Chua.

2 recordsLinked to original sources

Homogeneous Charge Relaxation in Organic Mixed Ionic-Electronic Conductors

Organic mixed ionic-electronic conductors (OMIECs) couple ionic and electronic signals, enabling energy storage, neuromorphic computing, and bioelectronics. However, how charge relaxes in water once the bias is removed, which determines how long stored states persist, remains unclear. Using operando charge photometry, we tracked charge in OMIEC films during biasing and open-circuit relaxation. Under bias, charges moved as redox fronts. After bias removal, charge instead relaxed uniformly across the channel. Modeling and cryo-electron microscopy indicate that swelling creates connected water-rich pathways through the bulk. These pathways speed ion motion but also let stored charge leak away. Tuning the terminal side chain of a polythiophene controls water uptake and ion trapping. Bulky hydrophobic side chains enable stable programmable states, whereas hydrophilic side chains support fast electrophysiology sensing.

cond-mat.mtrl-sci↗

Critical assessment of contact resistance and mobility in tin perovskite semiconductors

Recent reports highlight the potential of tin-based perovskite semiconductors for high-performance p-type field-effect transistors (FETs) with mobilities exceeding 20 cm2V-1s-1. However, these high mobilities--often obtained via two-probe (2P) methods on devices with small channel length-to-width ratios (L/W < 0.5) operating in the saturation regime at high drain-source currents--raise concerns about overestimation due to contact resistance and non-ideal FET characteristics. Here, we performed gated four-point probe (4PP) FET measurements on Hall bar devices (L/W = 6) of Cs0.15FA0.85SnI3, obtaining a consistent mobility of 3.3 cm2V-1s-1. Upon comparing these with gated 2P measurements of narrow-channel FETs (L/W = 0.1) on the same chip, we resolved the contact resistance (R_C). The 2P linear mobility is underestimated due to voltage drops across R_C, while the 2P saturation mobility is overestimated because of high (dR_C)/(dV_G) near the threshold. Contact resistance effects become more pronounced at lower temperatures. Contact-corrected four-point-probe (4PP) mobilities are independent of bias conditions and are observed to flatten at temperatures lower than 180 K. Future reports of perovskite FET mobilities should include gated 4PP measurements and use devices with larger L/W ratios to minimize nonidealities arising from contact resistance effects.

physics.app-ph↗