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Xianbin Li

Publications and source records attributed to Xianbin Li.

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Electronic excitation of ultrafast collective amorphous-amorphous transitions in glassy phase-change material

The intrinsic nature of glass states and glass transitions remain a fundamental open question in condensed-matter physics and materials science. The key to solving the glass transition problem lies in achieving a complete understanding of the physics governing the structural relaxation. Nonetheless, directly probing dynamic atomic-scale structural changes in order to identify the precise local structural motifs and establish quantitative structure-property relationships remains an outstanding challenge. By combining femtosecond electron diffraction with time-dependent density-functional theory molecular dynamics simulations, we directly capture ultrafast amorphous-amorphous transitions indicated by collective bond stretching (0.2 ps) and angle bending (0.5-2 ps) in glassy phase-change material GeTe. The ultrafast bond stretching is accompanied by localized oscillation modes with the frequency of 3.10 THz, unambiguously signaling the local Peierls-like bonding structure and the flexibility of these polarized bonds. These ultrafast collective atomic motions, captured across timescales ranging from femtoseconds to picoseconds, directly reveals the structural origin of the boson peak and provide compelling evidence for many-body interactions in amorphous materials. Furthermore, the ultrafast amorphous-amorphous transitions induce a drastic insulator-metal transition, directly revealing both the underlying switching mechanism and the fundamental speed limit of the ovonic threshold switch. These insights establish a fundamental framework for rationally engineering relaxation pathways and phase-change/threshold switch in amorphous materials. Femtosecond electron diffraction provides a powerful novel approach to deciphering the structural complexity and functional mechanisms of amorphous materials by resolving collective atomic motions from random diffusion dynamics in the time domain.

cond-mat.mtrl-sci

Photoinduced ultrafast transition of the local correlated structure in chalcogenide phase-change materials

Revealing the bonding and time-evolving atomic dynamics in functional materials with complex lattice structures can update the fundamental knowledge on rich physics therein, and also help to manipulate the material properties as desired. As the most prototypical chalcogenide phase change material, Ge2Sb2Te5 has been widely used in optical data storage and non-volatile electric memory due to the fast switching speed and the low energy consumption. However, the basic understanding of the structural dynamics on the atomic scale is still not clear. Using femtosecond electron diffraction, structure factor calculation and TDDFT-MD simulation, we reveal the photoinduced ultrafast transition of the local correlated structure in the averaged rock-salt phase of Ge2Sb2Te5. The randomly oriented Peierls distortion among unit cells in the averaged rock-salt phase of Ge2Sb2Te5 is termed as local correlated structures. The ultrafast suppression of the local Peierls distortions in individual unit cell gives rise to a local structure change from the rhombohedral to the cubic geometry within ~ 0.3 ps. In addition, the impact of the carrier relaxation and the large amount of vacancies to the ultrafast structural response is quantified and discussed. Our work provides new microscopic insights into contributions of the local correlated structure to the transient structural and optical responses in phase change materials. Moreover, we stress the significance of femtosecond electron diffraction in revealing the local correlated structure in the subunit cell and the link between the local correlated structure and physical properties in functional materials with complex microstructures.

cond-mat.mtrl-sci

Direct identification of Mott Hubbard band pattern beyond charge density wave superlattice in monolayer 1T-NbSe2

Understanding Mott insulators and charge density waves (CDW) is critical for both fundamental physics and future device applications. However, the relationship between these two phenomena remains unclear, particularly in systems close to two-dimensional (2D) limit. In this study, we utilize scanning tunneling microscopy/spectroscopy to investigate monolayer 1T-NbSe2 to elucidate the energy of the Mott upper Hubbard band (UHB), and reveal that the spin-polarized UHB is spatially distributed away from the dz2 orbital at the center of the CDW unit. Moreover, the UHB shows a root3 x root3 R30° periodicity in addition to the typically observed CDW pattern. Furthermore, a pattern similar to the CDW order is visible deep in the Mott gap, exhibiting CDW without contribution of the Mott Hubbard band. Based on these findings in monolayer 1T-NbSe2, we provide novel insights into the relation between the correlated and collective electronic structures in monolayer 2D systems.

cond-mat.str-el

Chemical-disorder-caused Medium Range Order in Covalent Glass

How atoms in covalent solids rearrange over a medium-range length-scale during amorphization is a long pursued question whose answer could profoundly shape our understanding on amorphous (a-) networks. Based on ab-intio calculations and reverse Monte Carlo simulations of experiments, we surprisingly find that even though the severe chemical disorder in a-GeTe undermined the prevailing medium range order (MRO) picture, it is responsible for the experimentally observed MRO. That this thing could happen depends on a novel atomic packing scheme. And this scheme results in a kind of homopolar bond chain-like polyhedral clusters. Within this scheme, the formation of homopolar bonds can be well explained by an electron-counting model and further validated by quantitative bond energy analysis based. Our study suggests that the underlying physics for chemical disorder in a-GeTe is intrinsic and universal to all severely chemically disordered covalent glasses.

cond-mat.dis-nn