arXiv subjects

Xiang-Xiang Song

Publications and source records attributed to Xiang-Xiang Song.

At least 19 recordsLinked to original sources

arXiv2026

Spectator Leakage Suppression via Invariant Subspace Engineering for CZ Gates in Superconducting Quantum Circuits

Spectator leakage poses a fundamental challenge to scalable quantum computing, particularly as frequency collisions become unavoidable in multi-qubit processors. We introduce a leakage mitigation strategy based on dynamically reshaping the system Hamiltonian. Our technique utilizes a tunable coupler to enforce a block-diagonal structure on the effective Hamiltonian governing near-resonant spectator interactions, confining the gate dynamics to a two-dimensional invariant subspace and thus preventing leakage by construction. On a multi-qubit superconducting processor, we experimentally demonstrate that this dynamic control scheme suppresses leakage rates to the order of $10^{-4}$, across a wide near-resonant detuning range and with up to three simultaneous spectator qubits. These results demonstrate a robust and scalable method that resolves the critical trade-off between dense frequency packing and high-fidelity gate operation. Our work establishes dynamic Hamiltonian engineering as an essential technology for building fault-tolerant quantum computers.

quant-ph↗

arXiv2025

Electrically-tunable graphene nanomechanical resonators

The excellent mechanical properties make graphene promising for realizing nanomechanical resonators with high resonant frequencies, large quality factors, strong nonlinearities, and the capability to effectively interface with various physical systems. Equipped with gate electrodes, it has been demonstrated that these exceptional device properties can be electrically manipulated, leading to a variety of nanomechanical/acoustic applications. Here, we review the recent progress of graphene nanomechanical resonators with a focus on their electrical tunability. First, we provide an overview of different graphene nanomechanical resonators, including their device structures, fabrication methods, and measurement setups. Then, the key mechanical properties of these devices, for example, resonant frequencies, nonlinearities, dissipations, and mode coupling mechanisms, are discussed, with their behaviors upon electrical gating being highlighted. After that, various potential classical/quantum applications based on these graphene nanomechanical resonators are reviewed. Finally, we briefly discuss challenges and opportunities in this field to offer future prospects of the ongoing studies on graphene nanomechanical resonators.

cond-mat.mes-hall↗

arXiv2025

Demonstrating Coherent Quantum Routers for Bucket-Brigade Quantum Random Access Memory on a Superconducting Processor

Quantum routers (QRouters) are essential components of bucket-brigade quantum random access memory (QRAM), enabling quantum applications such as Grover's search and quantum machine learning. Despite significant theoretical advances, achieving scalable and coherent QRouters experimentally remains challenging. Here, we demonstrate coherent quantum routers using a superconducting quantum processor, laying a practical foundation for scalable QRAM systems. The quantum router at the core of our implementation utilizes the transition composite gate (TCG) scheme, wherein auxiliary energy levels temporarily mediate conditional interactions, substantially reducing circuit depth compared to traditional gate decompositions. Moreover, by encoding routing addresses in the non-adjacent qutrit states $|0\rangle$ and $|2\rangle$, our design inherently enables eraser-detection capability, providing efficient post-selection to mitigate routing errors. Experimentally, we achieve individual QRouter fidelities up to 95.74%, and validate scalability through a two-layer quantum routing network achieving an average fidelity of 82.40%. Our results represent a significant advancement in quantum routing technology, providing enhanced fidelity, built-in error resilience, and practical scalability crucial for the development of future QRAM and large-scale quantum computing architectures.

quant-ph↗

arXiv2025

Electric-field independent spin-orbit coupling gap in hBN-encapsulated bilayer graphene

The weak spin-orbit coupling (SOC) in bilayer graphene (BLG) is essential for encoding spin qubits while bringing technical challenges for extracting the opened small SOC gap Δ_SO in experiments. Moreover, in addition to the intrinsic Kane-Mele term, extrinsic mechanisms also contribute to SOC in BLG, especially under experimental conditions including encapsulation of BLG with hexagonal boron nitride (hBN) and applying an external out-of-plane electric displacement field D. Although measurements of Δ_SO in hBN-encapsulated BLG have been reported, the relatively large experimental variations and existing experimental controversy make it difficult to fully understand the physical origin of Δ_SO. Here, we report a combined experimental and theoretical study on Δ_SO in hBN-encapsulated BLG. We use an averaging method to extract Δ_SO in gate-defined single quantum dot devices. Under D fields as large as 0.57-0.90 V/nm, Δ_SO=53.4-61.8 μeV is obtained from two devices. Benchmarked with values reported at lower D field regime, our results support a D field-independent Δ_SO. This behavior is confirmed by our first-principle calculations, based on which Δ_SO is found to be independent of D field, regardless of different hBN/BLG/hBN stacking configurations. Our calculations also suggest a weak proximity effect from hBN, indicating that SOC in hBN-encapsulated BLG is dominated by the intrinsic Kane-Mele mechanism. Our results offer insightful understandings of SOC in BLG, which benefit SOC engineering and spin manipulations in BLG.

cond-mat.mes-hall↗

arXiv2025

Realizing Scalable Conditional Operations through Auxiliary Energy Levels

In the noisy intermediate-scale quantum (NISQ) era, flexible quantum operations are essential for advancing large-scale quantum computing, as they enable shorter circuits that mitigate decoherence and reduce gate errors. However, the complex control of quantum interactions poses significant experimental challenges that limit scalability. Here, we propose a transition composite gate scheme based on transition pathway engineering, which digitally implements conditional operations with reduced complexity by leveraging auxiliary energy levels. Experimentally, we demonstrate the controlled-unitary (CU) family and its applications. In entangled state preparation, our CU gate reduces the circuit depth for three-qubit Greenberger-Horne-Zeilinger (GHZ) and W states by approximately 40-44% compared to circuits using only CZ gates, leading to fidelity improvements of 1.5% and 4.2%, respectively. Furthermore, with a 72% reduction in circuit depth, we successfully implement a quantum comparator-a fundamental building block for quantum algorithms requiring conditional logic, which has remained experimentally challenging due to its inherent circuit complexity. These results demonstrate the scalability and practicality of our scheme, laying a solid foundation for the implementation of large-scale quantum algorithms in future quantum processors.

quant-ph↗

arXiv2025

Hysteretic responses of nanomechanical resonators based on crumpled few-layer graphene

Manipulating two-dimensional materials occasionally results in crumpled membranes. Their complicated morphologies feature an abundance of folds, creases and wrinkles that make each crumpled membrane unique. Here, we prepare four nanomechanical resonators based on crumpled membranes of few-layer graphene and measure their static response and the spectrum of their dynamic response. We tune both responses with a dc voltage applied between the membrane and an underlying gate electrode. Surprisingly, we find that all four resonators exhibit hysteretic responses as the gate voltage is increased and then decreased. Concomitant discontinuities in the static response and in the vibrational resonant frequencies indicate a sudden change in the shape and in the tensile strain of the membranes. We also find that the hystereses can be removed and regular responses can be restored by annealing the resonators. We hypothesize that the hysteretic nature of the responses may originate from an interplay between the rugged morphology of the membranes and adsorbates trapped within the confine of the folds.

cond-mat.mes-hall↗

arXiv2025

Switching spin filling sequence in a bilayer graphene quantum dot through trigonal warping

We demonstrate a switchable electron shell structure in a bilayer graphene quantum dot by manipulating the trigonal warping effect upon electrical gating. Under a small perpendicular electric field, the lowest s-shell is sequentially filled with two spin-up and two spin-down electrons of opposite valleys. When increasing the electric field, an additional three-fold minivalley degeneracy is generated so that the s-shell can be filled with 12 electrons with the first/last 6 electrons having the same spin polarization. The switched spin filling sequence demonstrates the possibility of using the trigonal warping effect to electrically access and manipulate the spin degree of freedom in bilayer graphene.

cond-mat.mes-hall↗

arXiv2024

Revealing spin-flip two-level systems using ultra-thin film superconducting resonators

Material disorders are one of the major sources of noise and loss in solid-state quantum devices, whose behaviors are often modeled as two-level systems (TLSs) formed by charge tunneling between neighboring sites. However, the role of their spins in tunneling and its impact on device performance remain highly unexplored. In this work, employing ultra-thin TiN superconducting resonators, we reveal anomalous TLS behaviors by demonstrating an unexpected increase in resonant frequency at low magnetic fields. Furthermore, a spin-flip TLS model is proposed, in which an effective spin-orbit coupling is generated by inhomogeneous local magnetic fields from defect spins. This mechanism mixes charge tunnelings and spin flips, quantitatively reproducing the observed frequency-field relationship and its temperature dependence. This work deepens the understanding of spin-dependent TLS behaviors, offering the possibility of magnetically engineering noise and loss in solid-state quantum devices.

cond-mat.mes-hall↗

arXiv2024

Van der Waals Magnetic Electrode Transfer for Two-Dimensional Spintronic Devices

Two-dimensional (2D) materials are promising candidates for spintronic applications. Maintaining their atomically smooth interfaces during integration of ferromagnetic (FM) electrodes is crucial since conventional metal deposition tends to induce defects at the interfaces. Meanwhile, the difficulties in picking up FM metals with strong adhesion and in achieving conductance match between FM electrodes and spin transport channels make it challenging to fabricate high-quality 2D spintronic devices using metal transfer techniques. Here, we report a solvent-free magnetic electrode transfer technique that employs a graphene layer to assist in the transfer of FM metals. It also serves as part of the FM electrode after transfer for optimizing spin injection, which enables the realization of spin valves with excellent performance based on various 2D materials. In addition to two-terminal devices, we demonstrate that the technique is applicable for four-terminal spin valves with nonlocal geometry. Our results provide a promising future of realizing 2D spintronic applications using the developed magnetic electrode transfer technique.

cond-mat.mes-hall↗

arXiv2023

Tunable p-n junction barriers in few-electron bilayer graphene quantum dots

Graphene quantum dots provide promising platforms for hosting spin, valley, or spin-valley qubits. Taking advantage of the electrically generated band gap and the ambipolar nature, high-quality quantum dots can be defined in bilayer graphene using natural p-n junctions as tunnel barriers. In these devices, demonstrating the electrical tunability of the p-n junction barriers and understanding its physical mechanism, especially in the few-electron regime, are essential for further manipulating electron's quantum degrees of freedom to encode qubits. Here, we show the electrostatic confinement of single quantum dots in bilayer graphene using natural p-n junctions. When the device is operated in the few-electron regime, the electron tunneling rate is found to be monotonically tuned by varying gate voltages, which can be well understood from the view of manipulating the p-n junction barriers. Our results provide an insightful understanding of electrostatic confinement using natural p-n junctions in bilayer graphene, which is beneficial for realizing graphene-based qubits.

cond-mat.mes-hall↗

arXiv2022

Sliding nanomechanical resonators

The motion of a vibrating object is determined by the way it is held. This simple observation has long inspired string instrument makers to create new sounds by devising elegant string clamping mechanisms, whereby the distance between the clamping points is modulated as the string vibrates. At the nanoscale, the simplest way to emulate this principle would be to controllably make nanoresonators slide across their clamping points, which would effectively modulate their vibrating length. Here, we report measurements of flexural vibrations in nanomechanical resonators that reveal such a sliding motion. Surprisingly, the resonant frequency of vibrations draws a loop as a tuning gate voltage is cycled. This behavior indicates that sliding is accompanied by a delayed frequency response of the resonators, making their dynamics richer than that of resonators with fixed clamping points. Our work elucidates the dynamics of nanomechanical resonators with unconventional boundary conditions, and offers opportunities for studying friction at the nanoscale from resonant frequency measurements.

cond-mat.mes-hall↗

arXiv2022

Gate-Controlled Quantum Dots Based on Two-Dimensional Materials

Two-dimensional (2D) materials are a family of layered materials exhibiting rich exotic phenomena, such as valley-contrasting physics. Down to single-particle level, unraveling fundamental physics and potential applications including quantum information processing in these materials attracts significant research interests. To unlock these great potentials, gate-controlled quantum dot architectures have been applied in 2D materials and their heterostructures. Such systems provide the possibility of electrical confinement, control, and manipulation of single carriers in these materials. In this review, efforts in gate-controlled quantum dots in 2D materials are presented. Following basic introductions to valley degree of freedom and gate-controlled quantum dot systems, the up-to-date progress in etched and gate-defined quantum dots in 2D materials, especially in graphene and transition metal dichalcogenides, is provided. The challenges and opportunities for future developments in this field, from views of device design, fabrication scheme, and control technology, are discussed. The rapid progress in this field not only sheds light on the understanding of spin-valley physics, but also provides an ideal platform for investigating diverse condensed matter physics phenomena and realizing quantum computation in the 2D limit.

cond-mat.mes-hall↗

arXiv2020

Tunable parametric amplification of a graphene nanomechanical resonator in the nonlinear regime

Parametric amplification is widely used in nanoelectro-mechanical systems to enhance the transduced mechanical signals. Although parametric amplification has been studied in different mechanical resonator systems, the nonlinear dynamics involved receives less attention. Taking advantage of the excellent electrical and mechanical properties of graphene, we demonstrate electrical tunable parametric amplification using a doubly clamped graphene nanomechanical resonator. By applying external microwave pumping with twice the resonant frequency, we investigate parametric amplification in the nonlinear regime. We experimentally show that the extracted coefficient of the nonlinear Duffing force α and the nonlinear damping coefficient η vary as a function of external pumping power, indicating the influence of higher-order nonlinearity beyond the Duffing (~x^3) and van der Pol (~x^2 dx/dt) types in our device. Even when the higher-order nonlinearity is involved, parametric amplification still can be achieved in the nonlinear regime. The parametric gain increases and shows a tendency of saturation with increasing external pumping power. Further, the parametric gain can be electrically tuned by the gate voltage with a maximum gain of 10.2 dB achieved at the gate voltage of 19 V. Our results will benefit studies on nonlinear dynamics, especially nonlinear damping in graphene nanomechanical resonators that has been debated in the community over past decade.

physics.app-ph↗

arXiv2020

Coherent phonon dynamics in spatially separated graphene mechanical resonators

Vibrational modes in mechanical resonators provide a promising candidate to interface and manipulate classical and quantum information. The observation of coherent dynamics between distant mechanical resonators can be a key step towards scalable phonon-based applications. Here we report tunable coherent phonon dynamics with an architecture comprising three graphene mechanical resonators coupled in series, where all resonators can be manipulated by electrical signals on control gates. We demonstrate coherent Rabi oscillations between spatially separated resonators indirectly coupled via an intermediate resonator serving as a phonon cavity. The Rabi frequency fits well with the microwave burst power on the control gate. We also observe Ramsey interference, where the oscillation frequency corresponds to the indirect coupling strength between these resonators. Such coherent processes indicate that information encoded in vibrational modes can be transferred and stored between spatially separated resonators, which can open the venue of on-demand phonon-based information processing.

cond-mat.mes-hall↗

arXiv2017

Electrotunable artificial molecules based on van der Waals heterostructures

Quantum confinement has made it possible to detect and manipulate single-electron charge and spin states. The recent focus on two-dimensional (2D) materials has attracted significant interests on possible applications to quantum devices, including detecting and manipulating either single-electron charging behavior or spin and valley degrees of freedom. However, the most popular model systems, consisting of tunable double-quantum-dot molecules, are still extremely difficult to realize in these materials. We show that an artificial molecule can be reversibly formed in atomically thin MoS2 sandwiched in hexagonal boron nitride, with each artificial atom controlled separately by electrostatic gating. The extracted values for coupling energies at different regimes indicate a single-electron transport behavior, with the coupling strength between the quantum dots tuned monotonically. Moreover, in the low-density regime, we observe a decrease of the conductance with magnetic field, suggesting the observation of Coulomb blockade weak anti-localization. Our experiments demonstrate for the first time the realization of an artificial quantum-dot molecule in a gated MoS2 van der Waals heterostructure, which could be used to investigate spin-valley physics. The compatibility with large-scale production, gate controllability, electron-hole bipolarity, and new quantum degrees of freedom in the family of 2D materials opens new possibilities for quantum electronics and its applications.

cond-mat.mes-hall↗

arXiv2017

Quantum dot behavior in transition metal dichalcogenides nanostructures

Recently, transition metal dichalcogenides (TMDCs) semiconductors have been utilized for investigating quantum phenomena because of their unique band structures and novel electronic properties. In a quantum dot (QD), electrons are confined in all lateral dimensions, offering the possibility for detailed investigation and controlled manipulation of individual quantum systems. Beyond the definition of graphene QDs by opening an energy gap in nanoconstrictions, with the presence of a bandgap, gate-defined QDs can be achieved on TMDCs semiconductors. In this paper, we review the confinement and transport of QDs in TMDCs nanostructures. The fabrication techniques for demonstrating two-dimensional (2D) materials nanostructures such as field-effect transistors and QDs, mainly based on e-beam lithography and transfer assembly techniques are discussed. Subsequently, we focus on transport through TMDCs nanostructures and QDs. With steady improvement in nanoscale materials characterization and using graphene as a springboard, 2D materials offer a platform that allows creation of heterostructure QDs integrated with a variety of crystals, each of which has entirely unique physical properties.

cond-mat.mes-hall↗

arXiv2016

Tunable Hybrid Qubit in a GaAs Double Quantum Dot

We experimentally demonstrate a tunable hybrid qubit in a five-electron GaAs double quantum dot. The qubit is encoded in the (1,4) charge regime of the double dot and can be manipulated completely electrically. More importantly, dot anharmonicity leads to quasiparallel energy levels and a new anticrossing, which help preserve quantum coherence of the qubit and yield a useful working point. We have performed Larmor precession and Ramsey fringe experiments near the new working point and find that the qubit decoherence time is significantly improved over a charge qubit. This work shows a new way to encode a semiconductor qubit that is controllable and coherent.

cond-mat.mes-hall↗

arXiv2015

Suspending Effect on Low-Frequency Charge Noise in Graphene Quantum Dot

Charge noise is critical in the performance of gate-controlled quantum dots (QDs). Here we show the 1/f noise for a microscopic graphene QD is substantially larger than that for a macroscopic graphene field-effect transistor (FET), increasing linearly with temperature. To understand its origin, we suspended the graphene QD above the substrate. In contrast to large area graphene FETs, we find that a suspended graphene QD has an almost-identical noise level as an unsuspended one. Tracking noise levels around the Coulomb blockade peak as a function of gate voltage yields potential fluctuations of order 1 "μeV", almost one order larger than in GaAs/GaAlAs QDs. Edge states rather than substrate-induced disorders, appear to dominate the 1/f noise, thus affecting the coherency of graphene nano-devices.

cond-mat.mes-hall↗