arXiv subjects

Xiangang Wan

Publications and source records attributed to Xiangang Wan.

At least 109 records · Page 6Linked to original sources

arXiv2016

Nonlinear Quantum Hall effects in Rarita-Schwinger gas

Emergence of higher spin relativistic fermionic materials becomes a new favorite in the study of condensed matter physics. Massive Rarita-Schwinger 3/2-spinor was known owning very exotic properties, such as the superluminal fermionic modes and even being unstable in an external magnetic field. Due to the superluminal modes and the non-trivial constraints on the Rarita-Schwinger gas, we exposit anomalous properties of the Hall effects in (2+1)-dimensions which subvert the well-known quantum Hall paradigms. First, the Hall conductance of a pure Rarita-Schwinger gas is step-like but not plateau-quantized, instead of the linear dependence on the filling factor for a pure spin-1/2 Dirac gas. In reality, the Hall conductance of the Dirac gas is of quantized integer plateaus with the unit $\frac{e^2}h$ due to the localization away from the Landau level centers. If the general localization rule is applicable to the disordered Rarita-Schwinger gas, the Hall plateaus are also expected to appear but they are nonlinearly dependent on the Landau level index. Furthermore, there is a critical magnetic field beyond which higher Landau levels become unstable. This confines the filling factor of the system. We also show that the non-hermitness of the effective Hamiltonian is not crucial to the nonlinearity of the quantum Hall conductance.

cond-mat.quant-gas↗

arXiv2016

Temperature effect on lattice and electronic structures of WTe$_2$ from first-principles study

Tungsten ditelluride (WTe$_2$) exhibits extremely large and unsaturated magnetoresistance (MR). Due to the large spatially extensions of Te-5p and W-5d orbitals, the electronic properties of WTe$_2$ are sensitive to the lattice structures, which can probably affect the strongly temperature dependent MR found in experiment. Based on first-principle calculations, we investigate the temperature effect on the lattice and electronic structures of WTe$_2$. Our numerical results show that the thermal expansion coefficients of WTe$_2$ are highly anisotropic and considerably large. However, the temperature (less than 300 K) has ignorable effect on the Fermi surface of WTe$_2$. Our theoretical results clarify that the thermal expansion is not the main reason of the temperature-induced rapid decrease of magnetoresistance.

cond-mat.mtrl-sci↗

arXiv2016

Gate-Tunable Negative Longitudinal Magnetoresistance in the Predicted Type-II Weyl Semimetal WTe2

The progress in exploiting new electronic materials and devices has been a major driving force in solid-state physics. As a new state of matter, a Weyl semimetal (WSM), particularly a type-II WSM, hosts Weyl fermions as emergent quasiparticles and may harbor novel electrical transport properties because of the exotic Fermi surface. Nevertheless, such a type-II WSM material has not been experimentally observed in nature. In this work, by performing systematic magneto-transport studies on thin films of a predicted material candidate WTe2, we observe notable angle-sensitive (between the electric and magnetic fields) negative longitudinal magnetoresistance (MR), which can likely be attributed to the chiral anomaly in WSM. This phenomenon also exhibits strong planar orientation dependence with the absence of negative longitudinal MR along the tungsten chains (a axis), which is consistent with the distinctive feature of a type-II WSM. By applying a gate voltage, we demonstrate that the Fermi energy can be tuned through the Weyl points via the electric field effect; this is the first report of controlling the unique transport properties in situ in a WSM system. Our results have important implications for investigating simulated quantum field theory in solid-state systems and may open opportunities for implementing new types of electronic applications, such as field-effect chiral electronic devices.

cond-mat.mes-hall↗

arXiv2016

(CaO)(FeSe): A Layered Wide Gap Oxychalcogenide Semiconductor

A new iron-oxychalcogenide (CaO)(FeSe) was obtained which crystallizes in the orthorhombic space group Pnma (No. 62) with a = 5.9180(12) Å, b = 3.8802(8) Å, c = 13.193(3) Å. The unique structure of (CaO)(FeSe) is built up of a quasi-two-dimensional network of corrugated infinite layers of corner-shared FeSe2O2 tetrahedra that extend in the ab-plane. The corrugated layers composed of corner-shared FeSe2O2 tetrahedra stack along the c-axis with Ca2+ cations sandwiched between the layers. Optical spectroscopy and resistivity measurements reveal semiconducting behavior with an indirect optical band gap of around 1.8 eV and an activation energy of 0.19(1) eV. Electronic band structure calculations at the density function level predict a magnetic configuration as ground state and confirm the presence of an indirect wide gap in (CaO)(FeSe).

cond-mat.mtrl-sci↗

arXiv2016

La1-xBi1+xS3 (x~0.08): An n-Type Semiconductor

The new bismuth chalcogenide La0.92Bi1.08S3 crystallizes in the monoclinic space group C2/m with a = 28.0447(19) Å, b = 4.0722(2) Å, c = 14.7350(9) Å, and $β$ = 118.493(5)°. The structure of La0.92Bi1.08S3 is built up of NaCl-type Bi2S5 blocks, and BiS4 and LaS5 infinitely long chains forming a compact three-dimensional framework with parallel tunnels. Optical spectroscopy and resistivity measurements reveal a semiconducting behavior with a band gap of ~ 1 eV and activation energy for transport of 0.36(1) eV. Thermopower measurements suggest the majority carriers of La0.92Bi1.08S3 are electrons. Heat capacity measurements indicate no phase transitions from 2 to 300 K. Band structure calculations at the density functional theory level confirm the semiconducting nature and the indirect gap of La0.92Bi1.08S3.

cond-mat.mtrl-sci↗

arXiv2016

Tailoring Kinetics on a Topological Insulator Surface by Defect-Induced Strain: Pb Mobility on Bi2Te3

Heteroepitaxial structures based on Bi$_{2}$Te$_{3}$-type topological insulators (TIs) exhibit exotic quantum phenomena. For optimal characterization of these phenomena, it is desirable to control the interface structure during film growth on such TIs. In this process, adatom mobility is a key factor. We demonstrate that Pb mobility on the Bi$_{2}$Te$_{3}$(111) surface can be modified by the engineering local strain, ε, which is induced around the point-like defects intrinsically forming in the Bi$_{2}$Te$_{3}$(111) thin film grown on a Si(111)-7 $\times$ 7 substrate. Scanning tunneling microscopy observations of Pb adatom and cluster distributions and first-principles density functional theory (DFT) analyses of the adsorption energy and diffusion barrier E$_{d}$ of Pb adatom on Bi$_{2}$Te$_{3}$(111) surface show a significant influence of ε. Surprisingly, E$_d$ reveals a cusp-like dependence on ε due to a bifurcation in the position of the stable adsorption site at the critical tensile strain ε$_{c}$ $ \approx $ 0.8%. This constitutes a very different strain-dependence of diffusivity from all previous studies focusing on conventional metal or semiconductor surfaces. Kinetic Monte Carlo simulations of Pb deposition, diffusion, and irreversible aggregation incorporating the DFT results reveal adatom and cluster distributions compatible with our experimental observations.

cond-mat.mtrl-sci↗

arXiv2016

CaTe: a new topological node-line and Dirac semimetal

Topological semimetals recently stimulate intense research activities. Combining first-principles calculations and effective model analysis, we predict that CaTe is topological node-line semimetal when spin-orbit coupling (SOC) is ignored. We also obtain the nearly flat surface state which has the drumhead characteristic. When SOC is included, three node lines evolve into a pair of Dirac points along the $M-R$ line. These Dirac points are robust and protected by $C_{4}$ rotation symmetry. Once this crystal symmetry is broken, the Dirac points will be eliminated, and the system becomes a strong topological insulator.

cond-mat.mtrl-sci↗

arXiv2016

Concepts of Ferrovalley Material and Anomalous Valley Hall Effect

Valleytronics rooted in the valley degree of freedom is of both theoretical and technological importance as it offers additional opportunities for information storage and electronic, magnetic and optical switches. In analogy to ferroelectric materials with spontaneous charge polarization in electronics, as well as ferromagnetic materials with spontaneous spin polarization in spintronics, here we introduce a new member of ferroic-family, i.e. a ferrovalley material with spontaneous valley polarization. Combining a two-band kp model with first-principles calculations, we show that 2H-VSe2 monolayer, where the spin-orbit coupling coexists with the intrinsic exchange interaction of transition-metal-d electrons, is such a room-temperature ferrovalley material. We further predict that such system could demonstrate many distinctive properties, for example, chirality-dependent optical band gap and more interestingly, anomalous valley Hall effect. On account of the latter, a series of functional devices based on ferrovalley materials, such as valley-based nonvolatile random access memory, valley filter, are contemplated for valleytronic applications.

cond-mat.mtrl-sci↗

arXiv2016

Evidence of both surface and bulk Dirac bands in ZrSiS and the unconventional magnetoresistance

The unconventional magnetoresistance of ZrSiS single crystals is found unsaturated till the magnetic field of 53 T with the butterfly shaped angular dependence. Intense Shubnikov-de Haas oscillations resolve a bulk Dirac cone with a nontrivial Berry phase, where the Fermi surface area is 1.80*10^-3 Å-2 and reaches the quantum limit before 20 T. Angle resolved photoemission spectroscopy measurement reveals an electronic state with the two-dimensional nature around the X point of Brillouin zone boundary. By integrating the density functional theory calculations, ZrSiS is suggested to be a Dirac material with both surface and bulk Dirac bands.

cond-mat.mtrl-sci↗

arXiv2016

Direct observation of Landau level resonance and mass generation in Dirac semimetal Cd3As2 thin films

Three-dimensional topological Dirac semimetals have hitherto stimulated unprecedented research interests as a new class of quantum materials. Breaking certain types of symmetries has been proposed to enable the manipulation of Dirac fermions; and that was soon realized by external modulations such as magnetic fields. However, an intrinsic manipulation of Dirac states, which is more efficient and desirable, remains a significant challenge. Here, we report a systematic study of quasi-particle dynamics and band evolution in Cd3As2 thin films with controlled Chromium (Cr) doping by both magneto-infrared spectroscopy and electrical transport. For the first time, we observe square-root-B relation of inter-Landau-level resonance in undoped Cd3As2 Dirac semimetal, an important signature of ultra-relativistic Dirac state inaccessible in previous optical experiments. A crossover from quantum to quasi-classical behavior makes it possible to directly probe the mass of Dirac fermions. Importantly, Cr doping allows for a Dirac mass acquisition and topological phase transition enabling a desired dynamic control of Dirac fermions. Corroborating with the density-functional theory calculations, we show that the mass generation is essentially driven by explicit C4 rotation symmetry breaking and the resultant Dirac gap engineering through Cr substitution for Cd atoms. The manipulation of the system symmetry and Dirac mass in Cd3As2 thin films provides a tuning knob to explore the exotic states stemming from the parent phase of Dirac semimetals.

cond-mat.mtrl-sci↗

arXiv2015

A new topological semimetal with iso-energetic Weyl fermions in TaAs under high pressure

TaAs as one of the experimentally discovered topological Weyl semimetal has attracted intense interests recently. The ambient TaAs has two types of Weyl nodes which are not on the same energy level. As an effective way to tune lattice parameters and electronic interactions, high pressure is becoming a significant tool to explore new materials as well as their exotic states. Therefore, it is highly interesting to investigate the behaviors of topological Weyl fermions and possible structural phase transitions in TaAs under pressure. Here, with a combination of ab initio calculations and crystal structure prediction techniques, a new hexagonal P-6m2 phase is predicted in TaAs at pressure around 14 GPa. Surprisingly, this new phase is a topological semimetal with only single set of Weyl nodes exactly on the same energy level. The phase transition pressure from the experimental measurements, including electrical transport measurements and Raman spectroscopy, agrees with our theoretical prediction reasonably. Moreover, the P-6m2 phase seems to be quenched recoverable to ambient pressure, which increases the possibilities of further study on the exotic behaviors of single set of Weyl fermions, such as the interplay between surface states and other properties.

cond-mat.mtrl-sci↗

arXiv2015

Pressure-induced semimetal to superconductor transition in a three-dimensional topological material ZrTe5

As a new type of topological materials, ZrTe5 shows many exotic properties under extreme conditions. Utilizing resistance and ac magnetic susceptibility measurements under high pressure, while the resistance anomaly near 128 K is completely suppressed at 6.2 GPa, a fully superconducting transition emerges surprisingly. The superconducting transition temperature Tc increases with applied pressure, and reaches a maximum of 4.0 K at 14.6 GPa, followed by a slight drop but remaining almost constant value up to 68.5 GPa. At pressures above 21.2 GPa, a second superconducting phase with the maximum Tc of about 6.0 K appears and coexists with the original one to the maximum pressure studied in this work. In situ high-pressure synchrotron X-ray diffraction and Raman spectroscopy combined with theoretical calculations indicate the observed two-stage superconducting behavior is correlated to the structural phase transition from ambient Cmcm phase to high-pressure C2/m phase around 6 GPa, and to a mixture of two high-pressure phases of C2/m and P-1 above 20 GPa. The combination of structure, transport measurement and theoretical calculations enable a complete understanding of the emerging exotic properties in three-dimensional topological materials happened under extreme environments.

cond-mat.supr-con↗

arXiv2015

Magnetic Ordering Induced Giant Optical Property Change in Tetragonal BiFeO3

Magnetic ordering, as one of the most important characteristics in magnetic materials, could have significant influence on the band structure, spin dependent transport, and other important properties of materials. Its measurement, especially for the case of antiferromagnetic ordering, however, is generally difficult to be achieved. Here we demonstrate the feasibility of magnetic ordering detection using a noncontact and nondestructive optical method. Taking the compressive strained tetragonal BiFeO3 (BFO) as an example and combining density functional theory calculations with the minimal one-band tight-binding models, we find that when BFO changes from C1-type antiferromagnetic (AFM) phase to G-type AFM phase, the top of valance band shifts from the Z point to Γ point, which makes the original direct band gap become indirect. This can be explained by the two-center Slater-Koster parameters using the Harrison approach. The impact of magnetic ordering on energy band dispersion dramatically changes the optical properties of tetragonal BFO. For the linear ones, the energy shift of the optical band gap could be as large as 0.4 eV. As for the nonlinear ones, the change is even larger. The second-harmonic generation coefficient d33 of G-AFM becomes more than 13 times smaller than that of C1-type AFM case. Finally, we propose a practical way to distin-guish the C1- and G-type AFM of BFO using the optical method, which might be of great importance in next-generation information storage technologies and widens the potential application of BFO to optical switch.

cond-mat.mtrl-sci↗

arXiv2015

Engineering the magnetic anisotropy of atomic-scale nanostructure under electric field

Atomic-scale magnetic nanostructures are promising candidates for future information processing devices. Utilizing external electric field to manipulate their magnetic properties is an especially thrilling project. Here, by careful identifying different contributions of each atomic orbital to the magnetic anisotropy energy (MAE) of the ferromagnetic metal films, we argue that it is possible to engineer both the MAE and the magnetic response to the electric field of atomic-scale magnetic nanostructures. Taking the iron monolayer as a matrix, we propose several interesting iron nanostructures with dramatically different magnetic properties. Such nanostructures could exhibit strong magnetoelectric effect. Our work may open a new avenue to the artificial design of electrically controlled magnetic devices.

cond-mat.mtrl-sci↗

arXiv2015

Pressure-driven dome-shaped superconductivity and electronic structural evolution in tungsten ditelluride

Tungsten ditelluride has attracted intense research interest due to the recent discovery of its large unsaturated magnetoresistance up to 60 Tesla. Motivated by the presence of a small, sensitive Fermi surface of 5d electronic orbitals, we boost the electronic properties by applying a high pressure, and introduce superconductivity successfully. Superconductivity sharply appears at a pressure of 2.5 GPa, rapidly reaching a maximum critical temperature (Tc) of 7 K at around 16.8 GPa, followed by a monotonic decrease in Tc with increasing pressure, thereby exhibiting the typical dome-shaped superconducting phase. From theoretical calculations, we interpret the low-pressure region of the superconducting dome to an enrichment of the density of states at the Fermi level and attribute the high-pressure decrease in Tc to possible structural instability. Thus, Tungsten ditelluride may provide a new platform for our understanding of superconductivity phenomena in transition metal dichalcogenides.

cond-mat.supr-con↗

arXiv2015

Raman vibrational spectra of bulk to monolayer ReS2 with lower symmetry

Lattice structure and symmetry of two-dimensional (2D) layered materials are of key importance to their fundamental mechanical, thermal, electronic and optical properties. Raman spectroscopy, as a convenient and nondestructive tool, however has its limitations on identifying all symmetry allowing Raman modes and determining the corresponding crystal structure of 2D layered materials with high symmetry like graphene and MoS2. Due to lower structural symmetry and extraordinary weak interlayer coupling of ReS2, we successfully identified all 18 first-order Raman active modes for bulk and monolayer ReS2. Without van der Waals (vdW) correction, our local density approximation (LDA) calculations successfully reproduce all the Raman modes. Our calculations also suggest no surface reconstruction effect and the absence of low frequency rigid-layer Raman modes below 100 cm-1. Combining with Raman and LDA thus provides a general approach for studying the vibrational and structural properties of 2D layered materials with lower symmetry.

cond-mat.mes-hall↗

arXiv2015

The positive piezoconductive effect in graphene

As the thinnest conductive and elastic material, graphene is expected to play a crucial role in post-Moore era. Besides applications on electronic devices, graphene has shown great potential for nano-electromechanical systems. While interlayer interactions play a key role in modifying the electronic structures of layered materials, no attention has been given to their impact on electromechanical properties. Here we report the positive piezoconductive effect observed in suspended bi- and multi-layer graphene. The effect is highly layer number dependent and shows the most pronounced response for tri-layer graphene. The effect, and its dependence on the layer number, can be understood as resulting from the strain-induced competition between interlayer coupling and intralayer transport, as confirmed by the numerical calculations based on the non-equilibrium Green's function method. Our results enrich the understanding of graphene and point to layer number as a powerful tool for tuning the electromechanical properties of graphene for future applications.

cond-mat.mes-hall↗

arXiv2015

Robust linear magnetoresistance in WTe2

Unsaturated magnetoresistance (MR) has been reported in WTe2, and remains irrepressible up to very high field. Intense optimization of the crystalline quality causes a squarely-increasing MR, as interpreted by perfect compensation of opposite carriers. Herein we report our observation of linear MR (LMR) in WTe2 crystals, the onset of which is first identified by constructing the mobility spectra of the MR at low fields. The LMR further intensifies and predominates at fields higher than 20 Tesla while the parabolic MR gradually decays. The LMR remains unsaturated up to a high field of 60 Tesla and persists, even at a high pressure of 6.2 GPa. Assisted by density functional theory calculations and detailed mobility spectra, we find the LMR to be robust against the applications of high field, broken carrier balance, and mobility suppression. Angle-resolved photoemission spectroscopy reveals a unique quasilinear energy dispersion near the Fermi level. Our results suggest that the robust LMR is the low bound of the unsaturated MR in WTe2.

cond-mat.mtrl-sci↗