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Xiangjiang Dong

Publications and source records attributed to Xiangjiang Dong.

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Physical properties of RhGe and CoGe single crystals synthesized under high pressure

Chiral topological semimetals hosting multifold fermions and exotic surface states represent a frontier in topological materials research. Among them, noncentrosymmetric cubic B20 compounds-notably transition-metal silicides and germanides-offer a unique platform for realizing symmetry-protected topological phases and unconventional optoelectronic responses. Here, we report the physical properties of RhGe and CoGe single crystals with B20 structure in detail. Transport measurements reveal metallic behavior with characteristic Fermi-liquid scaling at low temperatures, while magnetization results confirm paramagnetism in both compounds. In addition, both of materials exhibit low carrier concentrations with small electronic specific heat coefficient, indicating their semimetal feature with weak electronic correlations. Such high-quality CoGe and RhGe single crystals provide a material platform to explore the evolution of multifold fermions and the instability of helicoid-arc surface states with spin-orbit coupling and surface environment in B20 material systems.

cond-mat.str-el

High Pressure Growth of Transition-Metal Monosilicide RhGe Single Crystals

Transition-metal monosilicide RhGe has been reported to exhibit weak itinerant ferromagnetism, superconductivity, and topological properties. In this study, we report the high-pressure growth of high-quality RhGe single crystals up to millimeter size using flux method. Transport measurements reveal the metallic behavior of RhGe between 2-300 K with Fermi liquid behavior at low temperature region. However, no superconductivity was observed with variations in Ge composition. Magnetic characterizations indicate that RhGe exhibits a paramagnetic behavior between 2-300 K. The high-quality, large-size RhGe single crystals pave the way for further investigation of their topological properties using spectroscopic techniques.

cond-mat.str-el