arXiv subjects

Xiangnan Sun

Publications and source records attributed to Xiangnan Sun.

5 recordsLinked to original sources

arXiv2026

A molecular-spin photovoltaic device

We fabricated a C60-based molecular spin photovoltaic device that integrated a photovoltaic response with the spin transport across the molecular layer. The photovoltaic response can be modified under the application of a small magnetic field, with a magnetophotovoltage of up to 5% at room temperature. Device functionalities include a magnetic current inverter and the presence of diverging magnetocurrent at certain illumination levels that could be useful for sensing. Completely spin-polarized currents could be created by balancing the external partially spin polarized injection with the photogenerated carriers.

cond-mat.mtrl-sci↗

arXiv2019

Short length Lyot filter utilized in dual-wavelength and wavelength tunable mode-locked fiber laser generation

Dual-wavelength mode-locked fiber laser and wavelength tunable mode-locked fiber laser have emerged as a promising light source. However, there is few reports on generating these two output from just one laser cavity. In this report, we demonstrate a dual-wavelength and wavelength tunable mode-locked fiber laser output from one laser cavity by utilizing short length Lyot filter. The central wavelengths of dual-wavelength mode-locked fiber laser are 1540 nm and 1564 nm and the tunable laser range is about 32 nm. We believe it could provide a simple set-up for generating dual-wavelength and wavelength tunable mode-locked output from one laser cavity.

physics.optics↗

arXiv2016

Frequency driven inversion of tunnel magnetoimpedance in magnetic tunnel junctions

Magnetic tunnel junctions (MTJs) are basic building blocks for devices such as magnetic random access memories (MRAMs). The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of MTJs crucial for exploring this regime. Here we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al{_2}O{_3}/NiFe MTJ, whereas we only observe a gradual decrease of tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important for understanding spin transport phenomena at the high frequency regime, in which the spin-polarized charge accumulation at the two interfaces plays a crucial role.

cond-mat.mes-hall↗

arXiv2015

Reliable determination of the Cu/n-Si Schottky barrier height by using in-device hot-electron spectroscopy

We show the operation of a Cu/Al_2O_3/Cu/n-Si hot-electron transistor for the straightforward determination of a metal/semiconductor energy barrier height even at temperatures below carrier-freeze out in the semiconductor. The hot-electron spectroscopy measurements return a fairly temperature independent value for the Cu/n-Si barrier of 0.66 $\pm$ 0.04 eV at temperatures below 180 K, in substantial accordance with mainstream methods based on complex fittings of either current-voltage (I-V) and capacitance-voltage (C-V) measurements. The Cu/n-Si hot-electron transistors exhibit an OFF current of ~2 * 10^-13 A, an ON/OFF ratio of ~10^5 and an equivalent subtreshold swing of ~96 mV/dec at low temperatures, which are suitable values for potential high frequency devices.

cond-mat.mes-hall↗

arXiv2012

How reliable are Hanle measurements in metals in a three-terminal geometry?

We test the validity of Hanle measurements in three-terminal devices by using aluminum (Al) and gold (Au). The obtained Hanle and inverted Hanle-like curves show an anomalous behavior. First, we measure Hanle signals 8 orders of magnitude larger than those predicted by standard theory. Second, the temperature and voltage dependences of the signal do not match with the tunneling spin polarization of the ferromagnetic contact. Finally, the spin relaxation times obtained with this method are independent of the choice of the metallic channel. These results are not compatible with spin accumulation in the metal. Furthermore, a scaling of the Hanle signal with the interface resistance of the devices suggests that the measured signal is originated in the tunnel junction.

cond-mat.mes-hall↗