arXiv subjects

Xiangwen Guo

Publications and source records attributed to Xiangwen Guo.

5 recordsLinked to original sources

arXiv2026

Heterogeneously Integrated Squeezed-Light Generation and Detection on a Single Photonic Chip

Squeezed light underpins quantum-enhanced sensing and continuous-variable quantum information processing, and integrated photonics offers a route to producing it at scale. Universal to these applications are squeezed-light generation and measurement. Importantly, quantum measurements serve not only as readout but also as active operations in quantum-state evolution. However, integrating squeezed-light generation and photodetection on the same photonic chip has remained challenging because they impose fundamentally conflicting material requirements: low optical loss to preserve quantum correlations, but efficient photon absorption for photodetection. Here, we demonstrate squeezed-light generation, routing, and balanced homodyne detection integrated on a single photonic chip through heterogeneous integration. A two-mode squeezed quantum microcomb comprising 34 quantum modes is measured with approximately 3 dB squeezing. Our work establishes a scalable architecture for fully integrated squeezed-light quantum photonic systems, unifying quantum-state generation, processing, and detection on a single chip.

quant-ph↗

arXiv2026

Heterogeneously Integrated Balanced Photodetector on an Ultra-Low Loss Silicon Nitride Delay Line Interferometer

Thin core silicon nitride photonics enables ultra-low loss, CMOS foundry compatible integration that supports wavelengths from the visible to shortwave infrared. Applications that can benefit from the resulting lower cost, improved robustness, and portability include quantum sensing and computing, ultra-low noise microwave generation, optical clocks, optical gyros, coherent fiber communications, and fiber sensing. An important next step is integration of functional circuits and systems on chip with heterogeneous integration of active components such as high-performance photodetection. Yet to date integrated high-performance photodetectors on the thin film silicon nitride platform has remained elusive. In this work, we demonstrate heterogeneous integration of an InGaAs on InP substrate Modified Uni-Traveling Carrier balanced photodetector with a 15-meter-long unbalanced thin core silicon nitride Mach-Zehnder Interferometer with a bandwidth of 0.92 GHz and a responsivity of 0.305 A/W at 1550 nm with a propagation loss as low as 2.5 dB/m at 1600 nm. Using this circuit we demonstrate two functions, a meter-scale differential interferometer laser stabilization circuit achieving a nearly 23 dB noise suppression at 1 kHz offset and an optical frequency discriminator frequency noise measurement with high sensitivity across 6 orders of magnitude from 10 Hz to 10 MHz. These results demonstrate that the high performance of thin core silicon nitride devices can be combined with integrated high-performance photodetection to realize on-chip stabilized lasers and circuits and pave the path towards full systems on chip.

physics.optics↗

arXiv2025

Universal loss and gain characterization inside photonic integrated circuits

Integrated photonics has undergone tremendous development in the past few decades, transforming many fields of study in science and technology. Loss and gain are two fundamental elements in photonic circuits and have direct impacts on nearly all key performance metrics. Surprisingly, the tools to characterize the optical loss and gain inside photonic integrated circuits (PICs) are very limited. This is because, unlike free-space or fiber optics, integrated circuits cannot be nondestructively disassembled. Here, we report a universal method to see inside the photonic integrated circuits and measure loss and gain on the component level nondestructively. The method leverages nonlinear optical devices as optical power discriminators to retrieve the loss and gain information inside the PICs. Our method has a precision better than 0.1 dB, and can characterize the loss of individual fiber-chip coupling facet and general unknown devices under test. As a demonstration of applications, we measured the true on-chip quantum efficiency of a quantum PIC consisting of heterogeneously integrated balanced photodiodes, a critical building block for integrated quantum technology. Our method can be implemented on different photonic platforms, and can be used to understand gain and loss in complex photonic circuits, which is essential to optimize circuit design and to create large-scale systems with predictable, reproducible performance.

physics.optics↗

arXiv2024

Integrated lithium niobate photonic computing circuit based on efficient and high-speed electro-optic conversion

Here we show a photonic computing accelerator utilizing a system-level thin-film lithium niobate circuit which overcomes this limitation. Leveraging the strong electro-optic (Pockels) effect and the scalability of this platform, we demonstrate photonic computation at speeds up to 1.36 TOPS while consuming 0.057 pJ/OP. Our system features more than 100 thin-film lithium niobate high-performance components working synergistically, surpassing state-of-the-art systems on this platform. We further demonstrate binary-classification, handwritten-digit classification, and image classification with remarkable accuracy, showcasing our system's capability of executing real algorithms. Finally, we investigate the opportunities offered by combining our system with a hybrid-integrated distributed feedback laser source and a heterogeneous-integrated modified uni-traveling carrier photodiode. Our results illustrate the promise of thin-film lithium niobate as a computational platform, addressing current bottlenecks in both electronic and photonic computation. Its unique properties of high-performance electro-optic weight encoding and conversion, wafer-scale scalability, and compatibility with integrated lasers and detectors, position thin-film lithium niobate photonics as a valuable complement to silicon photonics, with extensions to applications in ultrafast and power-efficient signal processing and ranging.

physics.optics↗

arXiv2024

Integrated electro-optics on thin-film lithium niobate

Electro-optics serves as the crucial bridge between electronics and photonics, unlocking a wide array of applications ranging from communications and computing to sensing and quantum information. Integrated electro-optics approaches in particular enable essential electronic high-speed control for photonics while offering substantial photonic parallelism for electronics. Recent strides in thin-film lithium niobate photonics have ushered revolutionary advancements in electro-optics. This technology not only offers the requisite strong electro-optic coupling but also boasts ultra-low optical loss and high microwave bandwidth. Further, its tight confinement and compatibility with nanofabrication allow for unprecedented reconfigurability and scalability, facilitating the creation of novel and intricate devices and systems that were once deemed nearly impossible in bulk systems. Building upon this platform, the field has witnessed the emergence of various groundbreaking electro-optic devices surpassing the current state of the art, and introducing functionalities that were previously non-existent. This technological leap forward provides a unique framework to explore various realms of physics as well, including photonic non-Hermitian synthetic dimensions, active topological physics, and quantum electro-optics. In this review, we present the fundamental principles of electro-optics, drawing connections between fundamental science and the forefront of technology. We discuss the accomplishments and future prospects of integrated electro-optics, enabled by thin-film lithium niobate platform.

physics.optics↗