arXiv subjects

Xianyang Lu

Publications and source records attributed to Xianyang Lu.

13 recordsLinked to original sources

arXiv2026

Negative temperature coefficient of Gilbert damping in magnetic bilayers

The Gilbert damping of magnetic materials is an important magnetic parameter that determines the switching speed and energy dissipation of spintronic devices. In simple metals, the intrinsic Gilbert damping increases with temperature and diverges near the Curie temperature as a result of spin fluctuations. Here we present atomistic simulations and experimental measurements showing surprising and opposite behavior in Py/Nd bilayers, where the Gilbert damping decreases with increasing temperature. The effect arises because of the enhanced damping at the interface as a result of spin pumping, where elevated temperatures cause a dynamic separation of the interfacial and bulk magnetization during relaxation. Furthermore, the temperature dependence of the damping can be controlled by varying the thickness of the Nd capping layer. Our findings present a new spintronic effect that can be used to modify the dynamic properties of nanoscale materials and devices for enhanced energy efficiency or with improved switching dynamics.

cond-mat.mes-hall↗

arXiv2025

Single femtosecond laser pulse-driven ferromagnetic switching

Light pulses offer a faster, more energy-efficient, and direct route to magnetic bit writing, pointing toward a hybrid memory and computing paradigm based on photon transmission and spin retention. Yet progress remains hindered, as deterministic, single-pulse optical toggle switching has so far been achieved only with ferrimagnetic materials, which require too specific a rare-earth composition and temperature conditions for technological use. In mainstream ferromagnet--central to spintronic memory and storage--such bistable switching is considered fundamentally difficult, as laser-induced heating does not inherently break time-reversal symmetry. Here, we report coherent magnetization switching in ferromagnets, driven by thermal anisotropy torque with single laser pulses. The toggle switching behavior is robust over a broad range of pulse durations, from femtoseconds to picoseconds, a prerequisite for practical applications. Furthermore, the phenomenon exhibits reproducibility in CoFeB/MgO-based magnetic tunnel junctions with a high magnetoresistance exceeding 110%, as well as the scalability down to nanoscales with remarkable energy efficiency (17 fJ per 100-nm-sized bit). These results mark a notable step toward integrating opto-spintronics into next-generation memory and storage technologies.

cond-mat.mes-hall↗

arXiv2025

Dimensionality Enhanced Out-of-Plane Spin Currents in NbIrTe$_4$ for Efficient Field-Free Switching of Perpendicular Magnetization

Efficient generation of out-of-plane (OOP) spin currents is crucial for advanced spintronic memory applications. However, the theoretical understanding and experimental implementation of robust OOP spin currents for high-density and low-power magnetization switching remain significant challenges of spintronics. Here, we demonstrate that transitioning NbIrTe$_4$ from a two-dimensional quantum spin Hall insulator to a three-dimensional type-II Weyl semimetal markedly enhances OOP spin current generation. The bulk topological Weyl semimetal nature of NbIrTe$_4$, characterized by its Weyl cone, significantly enhances the OOP spin Berry curvature, enabling an unprecedented OOP spin Hall conductivity exceeding $10^5\hbar/2e$ $\Omega^{-1}m^{-1} $. This enhancement, surpassing the in-plane component by more than fourfold, enables efficient and field-free spin-orbit torque (SOT) switching of perpendicular magnetization with a low current density of 1.4 MA/cm$^2$. The improved spin Hall conductivity reduces the overall power consumption by more than two orders of magnitude compared to existing systems, such as heavy metals. Our findings highlight the pivotal role of dimensionality in harnessing robust OOP spin currents in topological Weyl semimetals, paving the way for the development of high-density, low-power spintronic memory technologies.

cond-mat.mes-hall↗

arXiv2024

Spin Splitting in Altermagnetic RuO$_2$ Enables Field-free Spin-Orbit Torque Switching via Dominant Out-of-Plane Spin Polarization

Researchers have recently identified a novel class of magnetism, termed "altermagnetism", which exhibits characteristics of both ferromagnetism and antiferromagnetism. Here, we report a groundbreaking discovery of efficient field-free spin-orbit torque (SOT) switching in a RuO$_2$ (101)/Co/Pt/Co/Pt/Ta structure. Our results demonstrate that the spin current flows along the [100] axis, induced by the in-plane charge current, with the spin polarization direction aligned parallel to the N\'eel vector. These z-polarized spins generate an out-of-plane anti-damping torque, enabling deterministic switching of the Co/Pt layer without the necessity of an external magnetic field. The altermagnetic spin splitting effect (ASSE) in RuO$_2$ promotes the generation of spin currents with pronounced anisotropic behavior, maximized when the charge current flows along the [010] direction. This unique capability yields the highest field-free switching ratio, maintaining stable SOT switching within an external field range of approximately 400 Oe. Notably, ASSE dominates the spin current, especially when the current is aligned with the [010] direction ({\theta} = 90{\deg}). Here, the spin polarization component creates a substantial field-like effective field, surpassing the damping-like field from . This highlights the crucial role of in enhancing spin-torque efficiency and elucidating spin flow modulation mechanics in this crystalline context. Our study highlights the potential of RuO$_2$ as a powerful spin current generator, paving the way for practical applications in spin-torque switching technologies and other cutting-edge spintronic devices.

physics.app-ph↗

arXiv2024

Out-of-Plane Polarization from Spin Reflection Induces Field-Free Spin-Orbit Torque Switching in Structures with Canted NiO Interfacial Moments

Realizing deterministic current-induced spin-orbit torque (SOT) magnetization switching, especially in systems exhibiting perpendicular magnetic anisotropy (PMA), typically requires the application of a collinear in-plane field, posing a challenging problem. In this study, we successfully achieve field-free SOT switching in the CoFeB/MgO system. In a Ta/CoFeB/MgO/NiO/Ta structure, spin reflection at the NiO interface, characterized by noncollinear spin structures with canted magnetization, generates a spin current with an out-of-plane spin polarization {\sigma}z. We confirm the contribution of {\sigma}z to the field-free SOT switching through measurements of the shift effect in the out-of-plane magnetization hysteresis loops under different currents. The incorporation of NiO as an antiferromagnetic insulator, mitigates the current shunting effect and ensures excellent thermal stability of the device. The sample with 0.8 nm MgO and 2 nm NiO demonstrates an impressive optimal switching ratio approaching 100% without an in-plane field. This breakthrough in the CoFeB/MgO system promises significant applications in spintronics, advancing us closer to realizing innovative technologies.

physics.app-ph↗

arXiv2020

Timescales and contribution of heating and helicity effect in helicity-dependent all-optical switching

The manipulation of the magnetic direction by using the ultrafast laser pulse is attractive for its great advantages in terms of speed and energy efficiency for information storage applications. However, the heating and helicity effects induced by circularly polarized laser excitation are entangled in the helicity-dependent all-optical switching (HD-AOS), which hinders the understanding of magnetization dynamics involved. Here, by applying a dual-pump laser excitation, first with a linearly polarized (LP) laser pulse followed by a circularly polarized (CP) laser pulse, we identify the timescales and contribution from heating and helicity effects in HD-AOS with a Pt/Co/Pt triple layer. When the sample is preheated by the LP laser pulses to a nearly fully demagnetized state, CP laser pulses with a much-reduced power switches the sample's magnetization. By varying the time delay between the two pump pulses, we show that the helicity effect, which gives rise to the deterministic helicity induced switching, onsets instantly upon laser excitation, and only exists for less than 0.2 ps close to the laser pulse duration of 0.15 ps. The results reveal that that the transient magnetization state upon which CP laser pulses impinge is the key factor for achieving HD-AOS, and importantly, the tunability between heating and helicity effects with the unique dual-pump laser excitation approach will enable HD-AOS in a wide range of magnetic material systems for the potential ultrafast spintronics applications.

cond-mat.mtrl-sci↗

arXiv2020

Anisotropic ultrafast spin/valley dynamics in WTe2 films

WTe2 Weyl semimetal hosts the natural broken inversion symmetry and strong spin orbit coupling, making it promising for exotic spin/valley dynamics within a picosecond timescale. Here, we unveil an anisotropic ultrafast spin/valley dynamics in centimeter-scale, single-crystalline Td-WTe2 films using a femtosecond pump-probe technique at room temperature. We observe a transient (~0.8 ps) intra-valley transition and a subsequent polarization duration (~5 ps) during the whole spin/valley relaxation process. Furthermore, the relaxation exhibits the remarkable anisotropy of approximately six-fold and two-fold symmetries due to the intrinsic anisotropy along the crystalline orientation and the extrinsic matrix element effect, respectively. Our results offer a prospect for the ultrafast manipulation of spin/valleytronics in topological quantum materials for dissipationless high-speed spin/valleytronic devices.

cond-mat.mtrl-sci↗

arXiv2020

Defect-Correlated Skyrmions and Controllable Generation in Perpendicularly Magnetized CoFeB Ultrathin Films

Skyrmions have attracted significant interest due to their topological spin structures and fascinating physical features. The skyrmion phase arises in materials with Dzyaloshinskii-Moriya (DM) interaction at interfaces or in volume of non-centrosymmetric materials. However, although skyrmions were generated experimentally, one critical intrinsic relationship between fabrication, microstructures, magnetization and the existence of skyrmions remains to be established. Here, two series of CoFeB ultrathin films with controlled atomic scale structures are employed to reveal this relationship. By inverting the growth order, the amount of defects can be artificially tuned, and skyrmions are shown to be preferentially formed at defect sites. The stable region and the density of the skyrmions can be efficiently controlled in the return magnetization loops by utilizing first-order reversal curves to reach various metastable states. These findings establish the general and intrinsic relationship from sample preparation to skyrmion generation, offering an universal method to control skyrmion density.

cond-mat.mes-hall↗

arXiv2019

Enhancement of intrinsic magnetic damping in defect-free epitaxial Fe3O4 thin films

We have investigated the magnetic damping of precessional spin dynamics in defect-controlled epitaxial grown Fe$_3$O$_4$(111)/Yttria-stabilized Zirconia (YSZ) nanoscale films by all-optical pump-probe measurements. The intrinsic damping constant of the defect-free Fe$_3$O$_4$ film is found to be strikingly larger than that of the as-grown Fe$_3$O$_4$ film with structural defects. We demonstrate that the population of the first-order perpendicular standing spin wave (PSSW) mode, which is exclusively observed in the defect-free film under sufficiently high external magnetic fields, leads to the enhancement of the magnetic damping of the uniform precession (Kittel) mode. We propose a physical picture in which the PSSW mode acts as an additional channel for the extra energy dissipation of the Kittel mode. The energy transfer from Kittel mode to PSSW mode increases as in-plane magnetization precession becomes more uniform, resulting in the unique intrinsic magnetic damping enhancement in the defect-free Fe$_3$O$_4$ film.

cond-mat.mtrl-sci↗

arXiv2018

Roles of heating and helicity in ultrafast all-optical magnetization switching in TbFeCo

Using time-resolved magneto-optical Kerr effect (TR-MOKE) method, helicity-dependent all-optical magnetization switching (HD-AOS) is observed in ferrimagnetic TbFeCo films. The thermal effect and opto-magneto effects are separately justified after single circularly polarized laser pulse. The integral evolution of this ultrafast switching is characterized on different time scales and the defined magnetization reversal time of 460 fs is the fastest ever observed. Combining the heat effect and inverse Faraday effect (IFE), micromagnetic simulations based on a single macro-spin model are performed that reproduce HD-AOS following a linear reversal mechanism.

cond-mat.mtrl-sci↗

arXiv2017

Effect of Notch Structure on Magnetic Domain Movement in Planar Nanowires

We present the direct observation of magnetic domain motion in permalloy nanowires with notches using a wide-field Kerr microscopy technique. The domain wall motion can be modulated by the size and shape of the notch structure in the nanowires. It is demonstrated that the coercive fields can be tuned by modulating the notches. The experimental results are consistent with the micro-magnetic simulation results. The relationship between the notch angle and the domain nuclease are also studied. This work is useful for the design and development of the notch-based spintronic devices.

cond-mat.mes-hall↗

arXiv2017

Magnetic Domain Wall Engineering in a Nanoscale Permalloy Junction

Nanoscale magnetic junction provides a useful approach to act as the building block for magnetoresistive random access memories (MRAM), where one of the key issues is to control the magnetic domain configuration. Here, we study the domain structure and the magnetic switching in the Permalloy (Fe20Ni80) nanoscale magnetic junctions with different thicknesses by using micromagnetic simulations. It is found that both the 90-degree and 45-degree domain walls can be formed between the junctions and the wire arms depending on the thickness of the device. The magnetic switching fields show distinct thickness dependencies with a broad peak varying from 7 nm to 22 nm depending on the junction sizes, and the large magnetic switching fields favor the stability of the MRAM operation.

physics.comp-ph↗

arXiv2016

Elementary specific spin and orbital moments of ultrathin CoFeB amorphous films on GaAs(100)

Nanoscale CoFeB amorphous films have been synthesized on GaAs(100) and studied with X-ray magnetic circular dichroism (XMCD) and transmission electron microscopy (TEM). We have found that the ratios of the orbital to spin magnetic moments of both the Co and Fe in the ultrathin amorphous film have been enhanced by more than 300% compared with those of the bulk crystalline Co and Fe, and in specifically, a large orbital moment of 0.56*10^-6 B from the Co atoms has been observed and at the same time the spin moment of the Co atoms remains comparable to that of the bulk hcp Co. The results indicate that the large uniaxial magnetic anisotropy (UMA) observed in the ultrathin CoFeB film on GaAs(100) is related to the enhanced spin-orbital coupling of the Co atoms in the CoFeB. This work offers experimental evidences of the correlation between the UMA and the elementary specific spin and orbital moments in the CoFeB amorphous film on the GaAs(100) substrate, which is significant for spintronics applications.

cond-mat.mtrl-sci↗