arXiv subjects

Xiao-Dong Zeng

Publications and source records attributed to Xiao-Dong Zeng.

9 recordsLinked to original sources

arXiv2025

Nanoscale positioning and in-situ enhancement of single G center in silicon using a fluorescence-localization technique

Silicon-based semiconductor nanofabrication technology has achieved a remarkable level of sophistication and maturity, and color centers in silicon naturally inherit this advantage. Besides, their emissions appear in telecommunication bands, which makes them play a crucial role in the construction of quantum network. To address the challenge of weak spontaneous emission, different optical cavities are fabricated to enhance the emission rate. However, the relative location between cavity and emitter is random, which greatly reduce the success probability of enhancement. Here, we report on a fluorescence-localization technique (FLT) for precisely locating single G center in silicon and embedding it in the center of a circular Bragg grating cavity in situ, achieving 240-times improvement of the success probability. We observe a 30-fold enhancement in luminescence intensity, 2.5-fold acceleration of the emission from single G center, corresponding to a Purcell factor exceeding 11. Our findings pave the way for the large-scale integration of quantum light sources including those with spins.

physics.optics↗

arXiv2025

A hybrid-frequency on-chip programmable synthetic-dimension simulator with arbitrary couplings

High-performance photonic chips provide a powerful platform for analog computing, enabling the simulation of high-dimensional physical systems using low-dimensional devices with additional synthetic dimensions. The realization of large-scale complex simulations necessitates an architecture capable of arbitrary coupling configurations (encompassing symmetric, asymmetric and long-range coupling schemes) which is also crucial for scaling up. Previous approaches rely on excessive physical components to introduce asymmetric coupling, however, are restricted in reconfiguring and scaling by the relatively complicated structures. Here, to solve this problem, we propose a hybrid-frequency synthetic-dimension simulator architecture that combines both intra-resonant and inter-resonant frequency-lattice sites, and experimentally demonstrate it using the thin-film lithium niobate (TFLN) photonic chip. Employing this hybrid programmable architecture, we are able to simulate both the regular and long-range coupled forms of diverse compound-lattice models, such as the Hall ladder, Creutz ladder (symmetric) and Su-Schrieffer-Heeger (SSH, asymmetric) model, on a single chip, simultaneously reducing the experimental requirements significantly. As results, the direct readout of the bandstructure of the SSH model is able to be achieved, to be distinguished from all previous works, and important phenomena such as spin-momentum locking, topological flat band and Aharonov-Bohm cage effect are also observed with lower experimental requirements. Furthermore, applications like piecewise-continuous optical frequency shifting can be enabled by cascading our devices. Our results offer promising insights for future large-scale complex on-chip simulators with arbitrary couplings.

physics.optics↗

arXiv2025

Versatile photonic frequency synthetic dimensions using a single Mach-Zehnder-interferometer-assisted device on thin-film lithium niobate

Investigating physical models with photonic synthetic dimensions has been generating great interest in vast fields of science. The rapid developing thin-film lithium niobate (TFLN) platform, for its numerous advantages including high electro-optic coefficient and scalability, is well compatible with the realization of synthetic dimensions in the frequency together with spatial domain. While coupling resonators with fixed beam splitters is a common experimental approach, it often lacks tunability and limits coupling between adjacent lattices to sites occupying the same frequency domain positions. Here, on the contrary, we conceive the resonator arrays connected by electro-optic tunable Mach-Zehnder interferometers in our configuration instead of fixed beam splitters. By applying bias voltage and RF modulation on the interferometers, our design extends such coupling to long-range scenario and allows for continuous tuning on each coupling strength and synthetic effective magnetic flux. Therefore, our design enriches controllable coupling types that are essential for building programmable lattice networks and significantly increases versatility. As the example, we experimentally fabricate a two-resonator prototype on the TFLN platform, and on this single chip we realize well-known models including tight-binding lattices, topological Hall ladder and Creutz ladder. We directly observe the band structures in the quasi-momentum space and important phenomena such as spin-momentum locking and the Aharonov-Bohm cage effect. These results demonstrate the potential for convenient simulations of more complex models in our configuration.

physics.optics↗

arXiv2025

Temperature dependent single- and double-quantum relaxation of negatively charged boron vacancies in hexagonal boron nitride

The negatively charged boron vacancy in two-dimensional hexagonal boron nitride has emerged as a promising candidate for quantum sensing. The coherence time of this defect spins which coherent quantum sensing resides in is limited spin-phonon interactions, while the underlying physical mechanism of the corresponding high-temperature behavior is still not fully understood. Here, we probe the single- and double-quantum relaxation rates on this center over the temperature range from 293 to 393 K. The results show that both relaxation rates increase with increasing temperature, and the double-quantum relaxation rate significantly increases rapidly. At high temperature (above 400 K), the double-quantum relaxation rate is much greater than single-quantum relaxation rate, and may dominate the decoherence channel of spin-phonon interactions. Using a theoretical model of second-order spin-phonon interactions, we attribute the high-temperature spin relaxation rates to interactions with higher-energy effective phonon mode, aiding the further understanding and guiding high-temperature sensing applications.

quant-ph↗

arXiv2024

Experimental investigation of direct non-Hermitian measurement and uncertainty relation towards high-dimensional quantum domain

Non-Hermitian dynamics in quantum systems have unveiled novel phenomena, yet the implementation of valid non-Hermitian quantum measurement remains a challenge, because a universal quantum projective mechanism on the complete but skewed non-Hermitian eigenstates is not explicit in experiment. This limitation hinders the direct acquisition of non-Hermitian observable statistics (e.g., non-Hermitian population dynamics), also constrains investigations of non-Hermitian quantum measurement properties such as uncertainty relation. Here, we address these challenges by presenting a non-Hermitian projective protocol and investigating the non-Hermitian uncertainty relation. We derive the uncertainty relation for pseudo-Hermitian (PH) observables that is generalized beyond the Hermitian ones. We then investigate the projective properties of general quantum states onto complete non-Hermitian eigenvectors, and present a quantum simulating method to apply the valid non-Hermitian projective measurement on a direct-sum dilated space. Subsequently, we experimentally construct a quantum simulator in the quantum optical circuit and realize the 3-dimensional non-Hermitian quantum measurement on the single-photon qutrit. Employing this platform, we explore the uncertainty relation experimentally with different PH metrics. Our non-Hermitian quantum measurement method is state-independent and outputs directly the non-Hermitian quantum projective statistics, paving the way for studies of extensive non-Hermitian observable in quantum domain.

quant-ph↗

arXiv2023

Coherent control of an ultrabright single spin in hexagonal boron nitride at room temperature

Hexagonal boron nitride (hBN) is a remarkable two-dimensional (2D) material that hosts solid-state spins and has great potential to be used in quantum information applications, including quantum networks. However, in this application, both the optical and spin properties are crucial for single spins but have not yet been discovered simultaneously for hBN spins. Here, we realize an efficient method for arraying and isolating the single defects of hBN and use this method to discover a new spin defect with a high probability of 85%. This single defect exhibits outstanding optical properties and an optically controllable spin, as indicated by the observed significant Rabi oscillation and Hahn echo experiments at room temperature. First principles calculations indicate that complexes of carbon and oxygen dopants may be the origin of the single spin defects. This provides a possibility for further addressing spins that can be optically controlled.

physics.optics↗

arXiv2023

Realization of algorithmic identification of cause and effect in quantum correlations

Causal inference revealing causal dependencies between variables from empirical data has found applications in multiple sub-fields of scientific research. A quantum perspective of correlations holds the promise of overcoming the limitation by Reichenbach's principle and enabling causal inference with only the observational data. However, it is still not clear how quantum causal inference can provide operational advantages in general cases. Here, we have devised a photonic setup and experimentally realized an algorithm capable of identifying any two-qubit statistical correlations generated by the two basic causal structures under an observational scenario, thus revealing a universal quantum advantage in causal inference over its classical counterpart. We further demonstrate the explainability and stability of our causal discovery method which is widely sought in data processing algorithms. Employing a fully observational approach, our result paves the way for studying quantum causality in general settings.

quant-ph↗

arXiv2023

Laser Direct Writing of Visible Spin Defects in Hexagonal Boron Nitride for Applications in Spin-Based Technologies

Optically addressable spins in two-dimensional hexagonal boron nitride (hBN) attract widespread attention for their potential advantage in on-chip quantum devices, such as quantum sensors and quantum network. A variety of spin defects have been found in hBN, but no convenient and deterministic generation methods have been reported for other defects except negatively charged boron vacancy ($V_B^-$). Here we report that by using femtosecond laser direct writing technology, we can deterministically create spin defect ensembles with spectra range from 550 nm to 800 nm on nanoscale hBN flakes. Positive single-peak optically detected magnetic resonance (ODMR) signals are detected in the presence of magnetic field perpendicular to the substrate, and the contrast can reach 0.8%. With the appropriate thickness of hBN flakes, substrate and femtosecond laser pulse energy, we can deterministically and efficiently generate bright spin defect array. Our results provide a convenient deterministic method to create spin defects in hBN, which will motivate more endeavors for future researches and applications of spin-based technologies such as quantum magnetometer array.

physics.optics↗

arXiv2022

Reflective Dielectric Cavity Enhanced Emission from Hexagonal Boron Nitride Spin Defect Arrays

Among the various kinds of spin defects in hBN, the negatively charged boron vacancy ($\rm V_B^-$) spin defect that can be deterministically generated is undoubtedly a potential candidate for quantum sensing, but its low quantum efficiency restricts its %use in practical applications. Here, we demonstrate a robust enhancement structure with advantages including easy on-chip integration, convenient processing, low cost and suitable broad-spectrum enhancement for $\rm V_B^-$ defects. %Improved photoluminescence (PL) intensity and optically detected magnetic resonance (ODMR) contrast of $\rm V_B^-$ defect arrays. In the experiment, we used a metal reflective layer under the hBN flakes, filled with a transition dielectric layer in the middle, and adjusted the thickness of the dielectric layer to achieve the best coupling between the reflective dielectric cavity and the hBN spin defect. Using a reflective dielectric cavity, we achieved a PL enhancement of approximately 7-fold, and the corresponding ODMR contrast achieved 18\%. Additionally, the oxide layer of the reflective dielectric cavity can be used as an integrated material for micro-nano photonic devices for secondary processing, which means that it can be combined with other enhancement structures to achieve stronger enhancement. This work has guiding significance for realizing the on-chip integration of spin defects in two-dimensional materials.

quant-ph↗