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Xiao-Wei Zhang

Publications and source records attributed to Xiao-Wei Zhang.

At least 19 recordsLinked to original sources

Switching Chern number by sliding and gating in alternately twisted tetralayer MoTe2

Switching the bulk Chern number in topological materials is of central importance for the design of topological electronic devices. Motivated by recent observations of integer and fractional quantum anomalous Hall effects in twisted transition metal dichalcogenides (tTMDs), we realize the switching of valley Chern number through sliding and gating in alternately twisted tetralayer (ATT) MoTe$_{2}$. Using large-scale density functional theory (DFT) calculations, we show that the Chern number of the first $K$-valley moiré band evolves from $+1$ to $-1$ under the interlayer sliding. Furthermore, an applied electric field can switch the valley Chern number from $-1$ to $+1$. Based on the developed continuum model, we reveal that these switching behaviors are caused by the sliding- and gate-dependent intralayer moiré potential distributions across the layers. Our results establish ATT MoTe$_{2}$ as a promising platform for engineering moiré band topologies through the design of moiré potentials with sliding in multilayer moiré systems.

cond-mat.mtrl-sci↗

Atomic-Scale Observation of Symmetry Breaking in Altermagnetic MnTe

The recent discovery of altermagnetism has sparked growing interest in compensated magnetic systems as promising platforms for highly scalable spintronics. Altermagnetism is a distinct magnetic order where opposite spin sublattices are connected by rotation, yielding zero net magnetization but momentum-dependent spin splitting. To date, experimental verification of altermagnetic order has been achieved predominantly through bulk-sensitive techniques, including spin-dependent electronic spectra and transport responses. However, direct atomic-scale evidence that explicitly correlates crystal symmetry, local structural distortions, and magnetic ordering has remained unexplored. Here, we report the direct atomic-scale observation of coexisting polar distortions and altermagnetic order in MnTe, combining atomic resolution scanning transmission electron microscopy (STEM) imaging with electron magnetic chiral dichroism (EMCD) measurements. We reveal that MnTe is not an ideal uniform P63/mmc g-wave altermagnet at the atomic scale. Instead, it hosts ubiquitous inversion-symmetry-breaking distortions that lower the spin-space-group (SSG) symmetry, admits d-wave altermagnetic components, and in lower-symmetry regimes, even allow s-wave spin splitting (net magnetization). The coexistence of ferroelectric signatures and altermagnetic order establishes local lattice symmetry in MnTe as a control knob for altermagnetic spin splitting, spin current generation, and multiferroic memory applications.

cond-mat.mtrl-sci↗

Orbital Magnetization of Correlated States in Twisted Bilayer Transition Metal Dichalcogenides

Recent observations of quantum anomalous Hall effects in moiré systems have revealed the emergence of interaction-driven ferromagnetism with significant orbital contributions. To capture this physics, we extend the modern theory of orbital magnetization to Hartree-Fock states and show that the standard expression remains valid with Hartree-Fock orbitals and Hamiltonians. We then benchmark our theory against the Kane-Mele-Hubbard model in a weak field, which yields excellent agreement with direct numerical calculations. Applying our theory to twisted MoTe$_2$ bilayers, we find orbital magnetization of order one Bohr magneton per moiré cell with a non-monotonic twist-angle dependence. Our work establishes a general theory of orbital magnetization in interacting moiré systems and provides quantitative guidance for interpreting recent experiments.

cond-mat.mes-hall↗

Van Hove Singularity-Driven Topological Magnetism in Twisted MoTe2

Van Hove singularities (vHSs) strongly amplify electron interactions and can stabilize correlated phases in topological bands. Here we report signatures of topological magnetism in large-angle twisted bilayer MoTe2 driven by the interplay of vHSs, strong correlations, and valley topology. In a 4.8 degree device, electrostatic tuning to a vHS produces a spontaneous anomalous Hall hot spot near nu = -1. Combined transport and reflective magnetic circular dichroism measurements indicate that this regime is not governed by magnetization alone, but instead emerges from a correlated intervalley-coherent antiferromagnetic state that evolves with doping into a canted phase. With increasing magnetic field, the Hall response develops an additional finite-field component consistent with a topological Hall effect from a noncoplanar spin texture, before transitioning into a C = -1 Chern insulator. Our results establish tunable vHSs in moire topological bands as a route to chiral magnetism and engineering topological phase transitions.

cond-mat.mes-hall↗

Robust valley-polarized excitonic Mott states and doublons enabled by stacking-controlled moiré geometry

Atomically-thin moiré superlattices offer an optically accessible platform for interacting bosons, where strong onsite repulsion $U_{xx}$ suppresses double occupancy and supports excitonic Mott states at unit filling. However, moiré confinement also enhances phonon- and disorder-assisted relaxation, challenging the robustness of these correlated states under dissipation. Here we show that strengthening the intersite exciton repulsion $V_{xx}$ between neighboring moiré cells offers a distinct route to stabilizing unit-filling excitonic Mott states. In H-stacked WSe2/WS2, moiré confinement endows interlayer excitons with an out-of-plane dipole and a pronounced in-plane quadrupolar charge distribution. Helicity-resolved transient photoluminescence, supported by first-principles-informed modelling, reveals that this quadrupolar geometry increases $V_{xx}$ at unit filling by at least a factor of two relative to the dipolar R-stacked excitons. Despite a slight reduction in $U_{xx}$, the enhanced $V_{xx}$ yields a long-lived, valley-polarized excitonic Mott state at unit filling that persists for ~12 ns - more than twice as long as in R-stacks - and remains robust up to ~50 K. Beyond unit filling, the same geometry supports valley-polarized doublons with fourfold longer lifetimes than in R-stacks. These results establish moiré-geometric control of intersite interactions as a route to stabilizing excitonic Mott states and doublons against dissipation in solids.

cond-mat.mes-hall↗

Atomically Resolved Acoustic Dynamics Coupled with Magnetic Order in a van der Waals Antiferromagnet

Magnetoelastic coupling in van der Waals (vdW) magnetic materials enables a unique interplay between the spin and lattice degrees of freedom. Characterizing the elastic responses with atomic and femtosecond resolution across the magnetic transition is essential for guiding the design of magnetically tunable actuators and strain-mediated spintronic devices. Here, ultrafast x-ray diffraction employed at a free-electron laser reveals that the atomic displacements, wave vectors, and dispersion relations of acoustic phonon modes in a vdW antiferromagnet FePS$_3$ are coupled with the magnetic order, by tracking both in-plane and out-of-plane Bragg peaks upon optical excitation across the Néel temperature (T$_N$). One transverse mode shows that a quasi-out-of-plane atomic displacement undergoes a significant directional change across T$_N$. Its quasi-in-plane wave vector is derived by the comparison between the measured sound velocity and the first-principles calculations. The other transverse mode is an interlayer shear acoustic mode whose amplitude is strongly enhanced in the antiferromagnetic phase, exhibiting eight times stronger amplitude than the longitudinal acoustic mode below T$_N$. The atomically resolved characterization of acoustic phonon dynamics that couple with magnetic ordering opens opportunities for harnessing unique magnetoelastic coupling in vdW magnets on ultrafast timescales.

cond-mat.mtrl-sci↗

Layerwise Stratification and Band Reordering in Twisted Multilayer MoTe$_2$

We introduce a generalizable, physics informed strategy for generating training data that enables a machine learning force field accurate over a broad range of twist angles and stacking layer numbers in moire systems. Applying this to multilayer twisted MoTe2 (tMoTe2), we identify a structural and electronic stratification: the two moire interface (MI) layers retain substantial lattice reconstruction even in thick multilayers, while outer bulk like layers show rapidly attenuated distortions.Surprisingly, this stratification becomes strongest not in the ultra-small twist angle regime (<~1°), where in plane domain formation is well known, but rather at intermediate angles (2-5°). Simultaneously, interlayer hybridization across the MI-bulk boundary is strongly suppressed, leading to electronic isolation. In twisted double bilayer MoTe2, this stratification gives rise to coexisting honeycomb and triangular lattice motifs in the frontier valence bands. We further demonstrate that twist angle and weak gating can create energy shift of bands belonging to the two motifs, producing Chern band reordering and nonlinear electric polarization with modest hole doping. Our approach allows efficient simulation of multilayer moire systems and reveals structural-electronic separation phenomena absent in bilayer systems.

cond-mat.mtrl-sci↗

Visualizing Electronic Structure of Twisted Bilayer MoTe2 in Devices

The pursuit of emergent quantum phenomena lies at the forefront of modern condensed matter physics. A recent breakthrough in this arena is the discovery of the fractional quantum anomalous Hall effect (FQAHE) in twisted bilayer MoTe2 (tbMoTe2), marking a paradigm shift and establishing a versatile platform for exploring the intricate interplay among topology, magnetism, and electron correlations. While significant progress has been made through both optical and electrical transport measurements, direct experimental insights into the electronic structure - crucial for understanding and modeling this system - have remained elusive. Here, using spatially and angle-resolved photoemission spectroscopy (μ-ARPES), we directly map the electronic band structure of tbMoTe2. We identify the valence band maximum, whose partial filling underlies the FQAHE, at the K points, situated approximately 150 meV above the Γ valley. By fine-tuning the doping level via in-situ alkali metal deposition, we also resolve the conduction band minimum at the K point, providing direct evidence that tbMoTe2 exhibits a direct band gap - distinct from all previously known moire bilayer transition metal dichalcogenide systems. These results offer critical insights for theoretical modeling and advance our understanding of fractionalized excitations and correlated topological phases in this emergent quantum material.

cond-mat.mes-hall↗

Twist-angle transferable continuum model and second flat Chern band in twisted MoTe2 and WSe2

We develop a twist-angle transferable continuum model for twisted transition metal dichalcogenide (tTMD) homobilayers, using tMoTe2 and tWSe2 as examples. All model parameters are extracted from density functional theory (DFT) calculations at a single twist angle (3.89°) and monolayer data. Our model captures both lattice relaxation effects and the long-range behavior of piezoelectric and ferroelectric potentials. Leveraging lattice relaxations obtained via machine learning force fields (MLFFs), the model can be efficiently transferred to other twist angles without requiring additional DFT calculations. It accurately reproduces the DFT band dispersions and quantum geometries across a wide range of twist angles. Furthermore, our model reveals that a second flat Chern band arises near 2° when the interlayer potential difference becomes comparable to the interlayer tunneling. This continuum model provides a clear understanding and starting point for engineering novel electronic phases in moiré TMDs through twist angles and lattice relaxations.

cond-mat.mtrl-sci↗

Geometric Origin of Phonon Magnetic Moment in Dirac Materials

We develop a theory for the phonon magnetic moment in doped Dirac materials, treating phonons as emergent gauge and gravitational fields coupled to Dirac fermions in curved space. By classifying electron-phonon coupling into angular momentum channels of Fermi surface deformation, we show that the phonon moment arises from two mechanisms: proportional to the electron Hall conductivity through the emergent gauge field coupling, and to the Hall viscosity through the frame field coupling. Applying our theory to Cd$_3$As$_2$ with first-principles calculations, we find quantitative agreement with experiment. Our results reveal a general mechanism for dynamically generating large phonon magnetism in metals and suggest a new route for probing Hall viscosity via phonon dynamics.

cond-mat.mtrl-sci↗

Higher Landau-Level Analogs and Signatures of Non-Abelian States in Twisted Bilayer MoTe$_2$

Recent experimental discovery of fractional Chern insulators at zero magnetic field in moiré superlattices has sparked intense interests in bringing Landau level physics to flat Chern bands. In twisted MoTe$_2$ bilayers (tMoTe$_2$), recent theoretical and experimental studies have found three consecutive flat Chern bands at twist angle $\sim 2^\circ$. In this work, we investigate whether higher Landau level physics can be found in these consecutive Chern bands. At twist angles $2.00^\circ$ and $1.89^\circ$, we identify four consecutive $C = 1$ bands for the $K$ valley in tMoTe$_2$. By constructing Wannier functions directly from density functional theory (DFT) calculations, a six-orbital model is developed to describe the consecutive Chern bands, with the orbitals forming a honeycomb lattice. Exact diagonalization on top of Hartree-Fock calculations are carried out with the Wannier functions. Especially, when the second moiré miniband is half-filled, signatures of non-Abelian states are found. Our Wannier-based approach in modelling moiré superlattices is faithful to DFT wave functions and can serve as benchmarks for continuum models. The possibility of realizing non-Abelian anyons at zero magnetic field also opens up a new pathway for fault-tolerant quantum information processing.

cond-mat.str-el↗

Ferromagnetism and Topology of the Higher Flat Band in a Fractional Chern Insulator

The recent observation of the fractional quantum anomalous Hall effect in moiré fractional Chern insulators provides an opportunity to investigate zero magnetic field anyons. To potentially realize non-Abelian anyons, one approach is to engineer higher flat Chern bands that mimic higher Landau levels. Here, we investigate the interaction, topology, and ferromagnetism of the second moiré miniband in twisted MoTe2 bilayers. At half filling of the second miniband, we observe spontaneous ferromagnetism and an incipient Chern insulator state. The Chern numbers of the top two moiré flat bands exhibit opposite signs for twist angles above 3.1°, but share the same sign near 2.6°, consistent with theoretical predictions. In the 2.6° device, increasing magnetic field induces a topological phase transition via band crossing between opposite valleys, resulting in an emergent state with Chern number C = -2. Additionally, an insulating state at half filling of the second valley-polarized band suggests a charge-ordered state is favored over the fractional Chern insulator state. These findings lay a foundation for understanding the higher flat Chern bands, crucial for the discovery of non-Abelian fractional Chern insulators.

cond-mat.mes-hall↗

Visualizing the microscopic origins of topology in twisted molybdenum ditelluride

In moiré materials with flat electronic bands and suitable quantum geometry, strong correlations can give rise to novel topological states of matter. The nontrivial band topology of twisted molybdenum ditelluride (tMoTe$_2$) -- responsible for its fractional quantum anomalous Hall (FQAH) states -- is predicted to arise from a layer-pseudospin skyrmion lattice. Tracing the layer polarization of wavefunctions within the moiré unit cell can thus offer crucial insights into the band topology. Here, we use scanning tunneling microscopy and spectroscopy (STM/S) to probe the layer-pseudospin skyrmion textures of tMoTe$_2$. We do this by simultaneously visualizing the moiré lattice structure and the spatial localization of its electronic states. We find that the wavefunctions associated with the topological flat bands exhibit a spatially-dependent layer polarization within the moiré unit cell. This is in excellent agreement with our theoretical modeling, thereby revealing a direct microscopic connection between the structural properties of tMoTe$_2$ and its band topology. Our work enables new pathways for engineering FQAH states with strain, as well as future STM studies of the intertwined correlated and topological states arising in gate-tunable devices.

cond-mat.mes-hall↗

Gauge theory of giant phonon magnetic moment in doped Dirac semimetals

We present a quantum theory of phonon magnetic moment in doped Dirac semimetals. Our theory is based on an emergent gauge field approach to the electron-phonon coupling, applicable to both gapless and gapped systems. We find that the magnetic moment is directly proportional to the electrical Hall conductivity through the phonon Hall viscosity. Our theory is combined with the first-principles calculations, allowing us to quantitatively implement it to realistic materials. Magnetic moments are found to be on the order of Bohr magneton for certain phonon modes in graphene and $\text{Cd}_3 \text{As}_2$. Our results provide practical guidance for the dynamical generation of large magnetization in the topological quantum materials.

cond-mat.mtrl-sci↗

Polarization-driven band topology evolution in twisted MoTe$_2$ and WSe$_2$

Motivated by recent experimental observations of opposite Chern numbers in $R$-type twisted MoTe$_2$ and WSe$_2$ homobilayers, we perform large-scale density-functional-theory (DFT) calculations with machine learning force fields to investigate moiré band topology from large to small twist angles in both materials. We find that the Chern numbers of the moiré frontier bands change sign as a function of twist angle, and this change is driven by the competition between moiré ferroelectricity and piezoelectricity. Our large-scale calculations, enabled by machine learning methods, reveal crucial insights into interactions across different scales in twisted bilayer systems. The interplay between atomic-level relaxation effects and moiré-scale electrostatic potential variation opens new avenues for the design of intertwined topological and correlated states, including the possibility of mimicking higher Landau-level physics in the absence of a magnetic field.

cond-mat.mtrl-sci↗

Fractional Chern Insulator in Twisted Bilayer MoTe$_2$

A recent experiment has reported the first observation of a zero-field fractional Chern insulator (FCI) phase in twisted bilayer MoTe$_2$ moiré superlattices [Nature 622, 63-68 (2023)]. The experimental observation is at an unexpected large twist angle 3.7$^\circ$ and calls for a better understanding of the FCI in real materials. In this work, we perform large-scale density functional theory calculation for the twisted bilayer MoTe$_2$, and find that lattice reconstruction is crucial for the appearance of an isolated flat Chern band. The existence of the FCI state at $ν= -2/3$ are confirmed by exact diagonalization. We establish phase diagrams with respect to the twist angle and electron interaction, which reveal an optimal twist angle of $3.5^\circ$ for the observation of FCI. We further demonstrate that an external electric field can destroy the FCI state by changing band geometry and show evidence of the $ν=-3/5$ FCI state in this system. Our research highlights the importance of accurate single particle band structure in the quest for strong correlated electronic states and provides insights into engineering fractional Chern insulator in moiré superlattices.

cond-mat.str-el↗

Gate-tunable antiferromagnetic Chern insulator in twisted bilayer transition metal dichalcogenides

A series of recent experimental works on twisted MoTe$_2$ homobilayers have unveiled an abundance of exotic states in this system. Valley-polarized quantum anomalous Hall states have been identified at hole doping of $ν= -1$, and the fractional quantum anomalous Hall effect is observed at $ν= -2/3$ and $ν= -3/5$. In this work, we investigate the electronic properties of AA-stacked twisted bilayer MoTe$_2$ at $ν=-2$ by $k$-space Hartree-Fock calculations. We find that the phase diagram is qualitatively similar to the phase diagram of a Kane-Mele-Hubbard with staggered onsite potential. A noteworthy phase within the diagram is the antiferromagnetic Chern insulator, stabilized by the external electric field. We attribute the existence of this Chern insulator to an antiferromagnetic instability at a topological phase transition between the quantum spin hall phase and a band insulator phase. We highlight that the antiferromagnetic Chern insulator phase is most evident at a twist angle of approximately $4^\circ$. Our research proposes the potential of realizing a Chern insulator beyond $ν=-1$, and contributes fresh perspectives on the interplay between band topology and electron-electron correlations in moiré superlattices.

cond-mat.mes-hall↗

Gate-tunable phonon magnetic moment in bilayer graphene

We develop a first-principles quantum scheme to calculate the phonon magnetic moment in solids. As a showcase example, we apply our method to study gated bilayer graphene, a material with strong covalent bonds. According to the classical theory based on the Born effective charge, the phonon magnetic moment in this system should vanish, yet our quantum mechanical calculations find significant phonon magnetic moments. Furthermore, the magnetic moment is highly tunable by changing the gate voltage. Our results firmly establish the necessity of the quantum mechanical treatment, and identify small-gap covalent materials as a promising platform for studying tunable phonon magnetic moment.

cond-mat.mtrl-sci↗