arXiv subjects

Xiaobiao Liu

Publications and source records attributed to Xiaobiao Liu.

6 recordsLinked to original sources

arXiv2026

Coupled anisotropic weak topological states and Floquet mixed-parity altermagnetism in two-dimensional Su-Schrieffer-Heeger models

Su-Schrieffer-Heeger (SSH) topological systems and altermagnetic (AM) states are two important research areas in condensed matter physics. Realizing the coupled states between the SSH lattices and AM phanse in a single syetem remains challenging. However, the Floquet engineering change it. Our work constructs five two-dimensional-(2D-) SSH models to describe the coupled phases of SSH weak topological state and AM order by tight-binding (TB) method. The evolution of band structures, spin-splitting, and topological phase transitions under the circularly polarized light (CPL) and relative atomic displacement (RAD) in 2D SSH lattices were systematically investigated. The results reveal that the inequality of hopping parameters (t1 and t2) serves as the fundamental origin of SSH topological states and AM order. For the 2D nonmagnetic state, anisotropic weak topological states with Zak phase governed edge states are realized by unit cell selection, similar to the conventional 1D SSH model. The collinear antiferromagnetic state preserves the spin-degenerate band structure and intrinsic weak topological properties. Furthermore, the Floquet engineering introduces the AM phase of odd-parity p-wave while the RAD introduces the AM phase of even-parity d-wave. By combining the two effects, the mixed-parity (non-odd/non-even parity) AM phase could be realized, achieving the simultaneous control of the light field of spin-splitting and topological edge states. The physical mechanisms of Floquet engineering and RAD for the 2D rectangular SSH lattice are also from the inequality of t1 and t2, which can be not only fully understand by the TB methods, but also in good agreement with the first-principle calculations of 2D carbon-based materials. This work establishes an effective theoretical platform for coupling anisotropic SSH weak topological states and AM orders with multi-parities in 2D systems.

cond-mat.mtrl-sci↗

arXiv2025

Multiple magnetic states, valley electronics, and topological phase transitions in two-dimensional Janus XYZH (X = Sc, Y, La, Y = Cl, Br, I, and Z = S, Se, Te): From monolayers to bilayers

Exploring the coupling between layer, magnetism, valley, and topology in two-dimensional (2D) materials is an important approach to deepen our understanding of materials properties. We propose 27 stable ferromagnetic semiconductor monolayers of Janus XYZH (X = Sc, Y, La, Y = Cl, Br, I, and Z = S, Se, Te). All these monolayers exhibit spontaneous valley polarization, forming ferrovalley (FV) monolayers, showing anomalous valley Hall (AVH) effect. By applying external strain, the topological phase transitions including quantum anomalous Hall (QAH) effect can be introduced. In the ScBrSH bilayer system, AA and AB stacking configurations were constructed through interlayer sliding and rotational operation. The bilayer system exhibits interlayer antiferromagnetic (AFM) ordering with spontaneous valley polarization differing from the FV observed in monolayers. The sliding ferroelectricity observed in the AA stacking indicates that the system exhibits significant multiferroic characteristics. Further analysis shows that interlayer sliding can introduce a layer polarization anomalous valley Hall (LPAVH) effect, which can be precisely controlled by tuning the direction of the ferroelectric polarization. Upon applying external strain, the quantum layer spin Hall (QLSH) effect observed during the topological phase transition in the bilayer can be regarded as the superposition of two QAH monolayers. Furthermore, applying a twisting operation to the bilayer induces unexpected altermagnetism. Our study systematically reveals the rich physical properties of 2D XYZH materials, providing important theoretical foundations and guidance for the design and development of next-generation quantum devices.

cond-mat.mtrl-sci↗

arXiv2024

Rectangular carbon nitrides C4N monolayers with a zigzag buckled structure: Quasi-one-dimensional Dirac nodal lines and topological flat edge states

Due to the flexibility of C and N atoms in forming different types of bonds, the prediction of new two-dimensional (2D) carbon nitrides is a hot topic in the field of carbon-based materials. Using first-principles calculations, we propose two C4N monolayers with a zigzag buckled (ZB) structure. The ZB C4N monolayers contain raised-C (raised-N) atoms with sp3 hybridization, different from the traditional 2D graphene-like carbon nitride materials with sp2 hybridization. Interestingly, the band structures of the ZB C4N monolayers exhibit quasi-one-dimensional (quasi-1D) Dirac nodal line that results from the corresponding quasi-1D structure of the zigzag carbon chains, which is essentially different from the more common ring-shaped nodal line. The quasi-1D Dirac nodal line exhibits the following features: (i) gapless Dirac points, (ii) varying Fermi velocity, and (iii) slightly curved band along the high-symmetry path. All these features are successfully explained by our proposed tight-binding model that includes interactions up to the third nearest-neighbor. The Fermi velocity of the 2D system can reach 105 m/s, which is promising for applications in high-speed electronic devices. The topological flat band structure determined by the Zak phase and band inversion of the corresponding 1D system is edge-dependent, which is corresponding to the Su-Schrieffer-Heeger model, providing to rich physical phenomena.

cond-mat.mtrl-sci↗

arXiv2021

Ferromagnetism with in-plane magnetization, Dirac spin-gapless semiconducting property, and tunable topological states in two-dimensional rare-earth-metal dinitrides

As the bulk single-crystal MoN2/ReN2 with a layered structure was successfully synthesized in experiment, transition-metal dinitrides have attracted considerable attention in recent years. Here, we focus on rare-earth-metal (Rem) elements and propose seven stable Rem dinitride monolayers with a 1T structure, namely 1T-RemN2. These monolayers have a ferromagnetic ground state with in-plane magnetization. Without spin-orbit coupling (SOC) effect, the band structures are spin-polarized with Dirac points at the Fermi level. Remarkably, the 1T-LuN2 monolayer shows an isotropic magnetic anisotropy energy in the xy-plane with in-plane magnetization, indicating easy tunability of the magnetization direction. When rotating the magnetization vector in the xy-plane, our proposed model can accurately describe the variety of the SOC band gap and two topological states (Weyl-like semimetal and Chern insulator states) appear with tunable properties. The Weyl-like semimetal state is a critical point between the two Chern insulator states with opposite sign of the Chern numbers. The large nontrivial band gap (up to 60.3 meV) and the Weyl-like semimetal state are promising for applications in spintronic devices.

cond-mat.mtrl-sci↗

arXiv2018

Electronic properties of a $π$-conjugated Cairo pentagonal lattice: Direct band gap, ultrahigh carrier mobility and slant Dirac cones

Two-dimensional (2D) lattices composed exclusively of pentagons represent an exceptional structure of materials correlated to the famous pentagonal tiling problem in mathematics, but their $π$-conjugation and the related electronic properties have never been reported. Here, we propose a tight-binding (TB) model for a 2D Cairo pentagonal lattice and demonstrate that $p$-$d$ $π$-conjugation in the unique framework leads to intriguing properties, such as an intrinsic direct band gap, ultra-high carrier mobility and even slant Dirac cones. On the basis of first-principles calculations, we predict a candidate material, 2D penta-NiP$_2$ monolayer, derivated from bulk NiP$_2$ crystal, to realize the predictions of the TB model. It has ultra-high carrier mobility ($\sim$$10^5-10^6$ $cm^2V^{-1}s^{-1}$) comparable to that of graphene and an intrinsic direct band gap of 0.818 eV, which are long desired for high-speed electronic devices. The stability and possible synthetic routes of penta-NiP$_2$ monolayer are also discussed.

cond-mat.mtrl-sci↗

arXiv2017

Tuning of Interlayer Coupling in Large-Area Graphene/WSe2 van der Waals Heterostructure via Ion Irradiation: Optical Evidences and Photonic Applications

Van der Waals (vdW) heterostructures are receiving great attentions due to their intriguing properties and potentials in many research fields. The flow of charge carriers in vdW heterostructures can be efficiently rectified by the inter-layer coupling between neighboring layers, offering a rich collection of functionalities and a mechanism for designing atomically thin devices. Nevertheless, non-uniform contact in larger-area heterostructures reduces the device efficiency. In this work, ion irradiation had been verified as an efficient technique to enhance the contact and interlayer coupling in the newly developed graphene/WSe2 hetero-structure with a large area of 10 mm x 10 mm. During the ion irradiation process, the morphology of monolayer graphene had been modified, promoting the contact with WSe2. Experimental evidences of the tunable interlayer electron transfer are displayed by investigation of photoluminescence and ultrafast absorption of the irradiated heterostructure. Besides, we have found that in graphene/WSe2 heterostructure, graphene serves as a fast channel for the photo-excited carriers to relax in WSe2, and the nonlinear absorption of WSe2 could be effectively tuned by the carrier transfer process in graphene, enabling specific optical absorption of the heterostructure in comparison with separated graphene or WSe2. On the basis of these new findings, by applying the ion beam modified graphene/WSe2 heterostructure as a saturable absorber, Q-switched pulsed lasing with optimized performance has been realized in a Nd:YAG waveguide cavity. This work paves the way towards developing novel devices based on large-area heterostructures by using ion beam irradiation.

cond-mat.mes-hall↗