arXiv subjects

Xiaoda Liu

Publications and source records attributed to Xiaoda Liu.

7 recordsLinked to original sources

arXiv2026

Designing Magnetic Topological Insulator Trilayers for Highly-Efficient Spin-Orbit Torque Switching

Spin-orbit torque (SOT) enables efficient electrical control of magnetization, offering a pathway towards low-power spintronic devices. Magnetic topological insulators (TIs), with spin-momentum-locked surface states and intrinsic ferromagnetism, provide a unique platform for realizing SOT switching of edge current chirality in quantum anomalous Hall (QAH) insulators. In this work, we employ molecular beam epitaxy to synthesize a series of magnetic TI trilayers with controlled layer thicknesses on heat-treated SrTiO3(111) substrates. Electrical transport measurements reveal that SOT-driven magnetization reversal and the associated switching of edge current chirality are governed by the SrTiO3(111) substrate-induced charging effect, which generates an asymmetric chemical-potential alignment between the top and bottom magnetic TI layers. Furthermore, we demonstrate that the switching polarity and efficiency can be tuned through heterostructure design, gate voltage, and in-plane magnetic field, consistent with SOT symmetry. These findings identify chemical potential asymmetry as the origin of the large SOT switching ratio in magnetic TI trilayers and establish a route for electrical control of edge current chirality in QAH insulators. This work advances the understanding of SOT switching mechanism in magnetic topological materials and paves the way for next-generation, energy-efficient QAH-based logic and memory devices.

cond-mat.mes-hall↗

arXiv2025

Boundary-Bulk Interplay in Nonlinear Topological Transport

Nonlinear transport has emerged as a powerful approach to probe the quantum geometry of electronic wavefunctions, such as Berry curvature and quantum metric, in topological materials. While nonlinear responses governed by bulk quantum geometry and band topology are well understood, the role of boundary modes (e.g., edge, surface, and hinge states) in nonlinear transport of topological materials remains largely unexplored. In this work, we demonstrate boundary-bulk interplay in nonlinear transport, including second-harmonic Hall and nonreciprocal longitudinal responses, in molecular beam epitaxy-grown magnetic topological insulator heterostructures. We find that the nonlinear transport is maximized when the sample is tuned slightly away from the well-quantized states, including the quantum anomalous Hall and axion insulator states. The sign and amplitude of the nonlinear transport depend on electrode configuration, magnetic order, and carrier type, establishing boundary mode transport as the dominant contributor. These findings, supported by symmetry analysis and nonlinear Landauer-Büttiker formalism, demonstrate that nonlinear transport in topological materials is governed by the interplay between boundary and bulk states. We further derive a universal relation between different lead voltages from electrode geometry symmetry, which allows us to distinguish nonlinear boundary transport from bulk contributions. Our work highlights the critical role of electrodes in nonlinear transport, which is absent in nonlinear optics, and establishes boundary modes as a key origin of the giant nonlinear response in nearly bulk-insulating topological materials. This insight opens new opportunities for engineering nonlinear transport through boundary-bulk interplay in future device applications of topological materials.

cond-mat.mes-hall↗

arXiv2025

Evidence for Half-Quantized Chiral Edge Current in a C = 1/2 Parity Anomaly State

A single massive Dirac surface band is predicted to exhibit a half-quantized Hall conductance, a hallmark of the C = 1/2 parity anomaly state in quantum field theory. Experimental signatures of the C = 1/2 parity anomaly state have been observed in semi-magnetic topological insulator (TI) bilayers, yet whether it supports a half-quantized chiral edge current remains elusive. Here, we observe a robust half-quantized Hall conductance plateau in a molecular beam epitaxy (MBE)-grown asymmetric magnetic TI trilayer under specific in-plane magnetic field regimes, corresponding to the C = 1/2 parity anomaly state. Within this state, both nonlocal and nonreciprocal transport signals are greatly enhanced, which we identify as direct evidence for a half-quantized chiral edge current localized at the boundary of the top gapped surface. Our numerical simulations demonstrate that this half-quantized chiral edge channel is the essential carrier of the observed half-quantized Hall conductance plateau, analogous to the quantized chiral edge channel in the C = 1 quantum anomalous Hall state. Our results provide experimental evidence for the half-quantized chiral edge transport in a C = 1/2 parity anomaly state. This work establishes asymmetric magnetic TI trilayers as a platform for probing single Dirac fermion physics and paves the way to explore a series of exciting phenomena in the C = 1/2 parity anomaly state, including the topological magnetoelectric effect and quantized magneto-optical response.

cond-mat.mes-hall↗

arXiv2025

Gate-Tunable Ambipolar Josephson Current in a Topological Insulator

Dirac surface states in a topological insulator (TI) with proximity-induced superconductivity offer a promising platform for realizing topological superconductivity and Majorana physics. However, in TIs, the Josephson effect is usually observed in regimes where transport is dominated by either substantial bulk conduction channels or unipolar surface states. In this work, we demonstrate gate-tunable ambipolar Josephson current in lateral Josephson junction (JJ) devices based on bulk-insulating (Bi,Sb)2Te3 thin films grown by molecular beam epitaxy (MBE). For thinner films, the supercurrent exhibits pronounced gate-tunable ambipolar behavior and is significantly suppressed as the chemical potential approaches the Dirac point, yet persists across it. In contrast, thicker films exhibit a much weaker ambipolar response. Moreover, we find that the supercurrent becomes significantly less resilient to external magnetic fields when the chemical potential is tuned near the Dirac point in both thickness regimes. Our numerical simulations demonstrate the ambipolar behavior of these TI JJ devices and attribute the asymmetric supercurrent observed in thicker TI films to the coexistence of Dirac surface states and bulk conduction channels. The demonstration of gate-tunable ambipolar Josephson transport in MBE-grown TI films paves the way for realizing Dirac-surface-state-mediated topological superconductivity and establishes a foundation for future exploration of electrically tunable Majorana modes.

cond-mat.mes-hall↗

arXiv2025

Orbital Hybridization-Induced Ising-Type Superconductivity in a Confined Gallium Layer

In low-dimensional superconductors, the interplay between quantum confinement and interfacial hybridization effects can reshape Cooper pair wavefunctions and induce novel forms of unconventional superconductivity. In this work, we employ a plasma-free, carbon buffer layer-assisted confinement epitaxy method to synthesize trilayer gallium (Ga) sandwiched between a graphene layer and a 6H-SiC(0001) substrate, forming an air-stable graphene/trilayer Ga/SiC heterostructure. In this confined light-element Ga layer, we demonstrate interfacial Ising-type superconductivity driven by atomic orbital hybridization between the Ga layer and the SiC substrate. Electrical transport measurements reveal that the in-plane upper critical magnetic field u0Hc2,|| reaches ~21.98T at T=400 mK, approximately 3.38 times the Pauli paramagnetic limit (~6.51T). Angle-resolved photoemission spectroscopy (ARPES) measurements combined with theoretical calculations confirm the presence of split Fermi surfaces with Ising-type spin textures at the K and K' valleys of the confined Ga layer strongly hybridized with SiC. Moreover, by incorporating finite relaxation time induced by impurity scattering into an Ising-type superconductivity model, we reproduce the entire temperature-dependent u0Hc2,|| phase diagram. This work establishes a new strategy to realize unconventional pairing wavefunctions by combining quantum confinement and interfacial hybridization effects in superconducting thin films. It also opens new avenues for designing scalable superconducting quantum electronic and spintronic devices through interfacial engineering.

cond-mat.mes-hall↗

arXiv2024

HeteGraph-Mamba: Heterogeneous Graph Learning via Selective State Space Model

We propose a heterogeneous graph mamba network (HGMN) as the first exploration in leveraging the selective state space models (SSSMs) for heterogeneous graph learning. Compared with the literature, our HGMN overcomes two major challenges: (i) capturing long-range dependencies among heterogeneous nodes and (ii) adapting SSSMs to heterogeneous graph data. Our key contribution is a general graph architecture that can solve heterogeneous nodes in real-world scenarios, followed an efficient flow. Methodologically, we introduce a two-level efficient tokenization approach that first captures long-range dependencies within identical node types, and subsequently across all node types. Empirically, we conduct comparisons between our framework and 19 state-of-the-art methods on the heterogeneous benchmarks. The extensive comparisons demonstrate that our framework outperforms other methods in both the accuracy and efficiency dimensions.

cs.LG↗

arXiv2024

Even-Odd Layer-Dependent Exchange Bias Effect in MnBi2Te4 Chern Insulator Devices

Magnetic topological materials with coexisting magnetism and non-trivial band structures exhibit many novel quantum phenomena, including the quantum anomalous Hall effect, the axion insulator state, and the Weyl semimetal phase. As a stoichiometric layered antiferromagnetic topological insulator, thin films of MnBi2Te4 show fascinating even-odd layer-dependent physics. In this work, we fabricate a series of thin-flake MnBi2Te4 devices using stencil masks and observe the Chern insulator state at high magnetic fields and a square hysteresis loop near zero magnetic field in all these devices. Upon magnetic field training, a large exchange bias effect is observed in odd but not in even septuple layer (SL) devices. Our theoretical calculations interpret this even-odd layer-dependent exchange bias effect as a consequence of contrasting surface and bulk magnetic properties of MnBi2Te4 devices. Our findings reveal the microscopic magnetic configuration of MnBi2Te4 thin flakes and highlight the challenges in replicating the zero magnetic field quantum anomalous Hall effect in odd SL MnBi2Te4 devices.

cond-mat.mtrl-sci↗