arXiv subjects

Xiaodong Xu

Publications and source records attributed to Xiaodong Xu.

At least 289 records · Page 16Linked to original sources

arXiv2018

Imaging Quantum Spin Hall Edges in Monolayer WTe2

A two-dimensional (2D) topological insulator (TI) exhibits the quantum spin Hall (QSH) effect, in which topologically protected spin-polarized conducting channels exist at the sample edges. Experimental signatures of the QSH effect have recently been reported for the first time in an atomically thin material, monolayer WTe2. Electrical transport measurements on exfoliated samples and scanning tunneling spectroscopy on epitaxially grown monolayer islands signal the existence of edge modes with conductance approaching the quantized value. Here, we directly image the local conductivity of monolayer WTe2 devices using microwave impedance microscopy, establishing beyond doubt that conduction is indeed strongly localized to the physical edges at temperatures up to 77 K and above. The edge conductivity shows no gap as a function of gate voltage, ruling out trivial conduction due to band bending or in-gap states, and is suppressed by magnetic field as expected. Interestingly, we observe additional conducting lines and rings within most samples which can be explained by edge states following boundaries between topologically trivial and non-trivial regions. These observations will be critical for interpreting and improving the properties of devices incorporating WTe2 or other air-sensitive 2D materials. At the same time, they reveal the robustness of the QSH channels and the potential to engineer and pattern them by chemical or mechanical means in the monolayer material platform.

cond-mat.mes-hall↗

arXiv2018

Voltage Control of a van der Waals Spin-Filter Magnetic Tunnel Junction

Atomically thin chromium triiodide (CrI3) has recently been identified as a layered antiferromagnetic insulator, in which adjacent ferromagnetic monolayers are antiferromagnetically coupled. This unusual magnetic structure naturally comprises a series of anti-aligned spin filters which can be utilized to make spin-filter magnetic tunnel junctions with very large tunneling magnetoresistance (TMR). Here we report voltage control of TMR formed by four-layer CrI3 sandwiched by monolayer graphene contacts in a dual-gated structure. By varying the gate voltages at fixed magnetic field, the device can be switched reversibly between bistable magnetic states with the same net magnetization but drastically different resistance (by a factor of ten or more). In addition, without switching the state, the TMR can be continuously modulated between 17,000% and 57,000%, due to the combination of spin-dependent tunnel barrier with changing carrier distributions in the graphene contacts. Our work demonstrates new kinds of magnetically moderated transistor action and opens up possibilities for voltage-controlled van der Waals spintronic devices.

cond-mat.mes-hall↗

arXiv2018

Ultrathin van der Waals metalenses

Ultrathin and flat optical lenses are essential for modern optical imaging, spectroscopy, and energy harvesting. Dielectric metasurfaces comprising nanoscale quasi-periodic resonator arrays are promising for such applications, as they can tailor the phase, amplitude, and polarization of light at subwavelength resolution, enabling multi-functional optical elements. To achieve 2πphase coverage, however, most dielectric metalenses need a thickness comparable to the wavelength, requiring fabrication of high-aspect-ratio scattering elements. Here, we report ultrathin dielectric metalenses made of van der Waals (vdW) materials, leveraging their high refractive indices and the incomplete phase design approach to achieve device thicknesses down to ~λ/10, operating at infrared and visible wavelengths. These materials have generated strong interest in recent years due to their advantageous optoelectronic properties. Using vdW metalenses, we demonstrate near diffraction-limited focusing and imaging, and exploit their layered nature to transfer the fabricated metalenses onto flexible substrates to show strain-induced tunable focusing. Our work enables further downscaling of optical elements and opportunities for integration of metasurface optics in ultra-miniature optoelectronic systems.

physics.optics↗

arXiv2018

On the Nonexistence of Some Generalized Folkman Numbers

For an undirected simple graph $G$, we write $G \rightarrow (H_1, H_2)^v$ if and only if for every red-blue coloring of its vertices there exists a red $H_1$ or a blue $H_2$. The generalized vertex Folkman number $F_v(H_1, H_2; H)$ is defined as the smallest integer $n$ for which there exists an $H$-free graph $G$ of order $n$ such that $G \rightarrow (H_1, H_2)^v$. The generalized edge Folkman numbers $F_e(H_1, H_2; H)$ are defined similarly, when colorings of the edges are considered. We show that $F_e(K_{k+1},K_{k+1};K_{k+2}-e)$ and $F_v(K_k,K_k;K_{k+1}-e)$ are well defined for $k \geq 3$. We prove the nonexistence of $F_e(K_3,K_3;H)$ for some $H$, in particular for $H=B_3$, where $B_k$ is the book graph of $k$ triangular pages, and for $H=K_1+P_4$. We pose three problems on generalized Folkman numbers, including the existence question of edge Folkman numbers $F_e(K_3, K_3; B_4)$, $F_e(K_3, K_3; K_1+C_4)$ and $F_e(K_3, K_3; \overline{P_2 \cup P_3} )$. Our results lead to some general inequalities involving two-color and multicolor Folkman numbers.

math.CO↗

arXiv2018

Valley Manipulation by Optically Tuning the Magnetic Proximity Effect in WSe$_2$/CrI$_3$ Heterostructures

Monolayer valley semiconductors, such as tungsten diselenide (WSe$_2$), possess valley pseudospin degrees of freedom that are optically addressable but degenerate in energy. Lifting the energy degeneracy by breaking time-reversal symmetry is vital for valley manipulation. This has been realized by directly applying magnetic fields or via pseudo-magnetic fields generated by intense circularly polarized optical pulses. However, sweeping large magnetic fields is impractical for devices, and the pseudo-magnetic fields are only effective in the presence of ultrafast laser pulses. The recent rise of two-dimensional (2D) magnets unlocks new approaches to control valley physics via van der Waals heterostructure engineering. Here we demonstrate wide continuous tuning of the valley polarization and valley Zeeman splitting with small changes in the laser excitation power in heterostructures formed by monolayer WSe$_2$ and 2D magnetic chromium triiodide (CrI$_3$). The valley manipulation is realized via optical control of the CrI$_3$magnetization, which tunes the magnetic exchange field over a range of 20 T. Our results reveal a convenient new path towards optical control of valley pseudospins and van der Waals magnetic heterostructures.

cond-mat.mes-hall↗

arXiv2018

Virtual trions in the photoluminescence of monolayer transition-metal dichalcogenides

Photoluminescence experiments from monolayer transition-metal dichalcogenides often show that the binding energy of trions is conspicuously similar to the energy of optical phonons. This enigmatic coincidence calls into question whether phonons are involved in the radiative recombination process. We address this problem, unraveling an intriguing optical transition mechanism. Its initial state is a localized charge (electron or hole) and delocalized exciton. The final state is the localized charge, phonon and photon. In between, the intermediate state of the system is a virtual trion formed when the localized charge captures the exciton through emission of the phonon. We analyze the difference between radiative recombinations that involve real and virtual trions (i.e., with and without a phonon), providing useful ways to distinguish between the two in experiment.

cond-mat.mtrl-sci↗

arXiv2018

Piezoelectricity of Atomically Thin WSe2 via Laterally Excited Scanning Probe Microscopy

Lattices of odd-layered two-dimensional (2D) transition metal dichalcogenides (TMDs) such as WSe2 are non-centrosymmetric, and thus could possess linear piezoelectricity that is attractive for applications such as nanoelectromechanical systems (NEMS) and nanogenerators. Measuring the electromechanical coupling of 2D TMDs, however, is rather challenging, since its D3h point group symmetry makes conventional piezoresponse force microscopy (PFM) inapplicable. Here we develop a lateral excitation scanning probe microscopy (SPM) technique that enables mapping of the piezoelectric response of atomically thin WSe2 directly on a substrate with high spatial resolution. Planar electrodes are used to excite piezoelectric vibrations while imposing anisotropic in-plane mechanical constraint to the WSe2, resulting in an out-of-plane deformation due to Poisson's effect that can be measured by an SPM probe. Using this technique, we show that WSe2 monolayer and trilayers exhibit strong electromechanical response linear to the applied excitation biases that is distinct from the substrate, while WSe2 bilayer show negligible electromechanical response as expected. The effective piezoelectric coefficient is estimated to be 5.2 pm/V from the measurement, consistent with theoretical predictions. This method can be conveniently applied to a wide range of 2D materials with similar symmetry.

cond-mat.mtrl-sci↗

arXiv2018

Constraining the interaction between dark sectors with future HI intensity mapping observations

We study a model of interacting dark matter and dark energy, in which the two components are coupled. We calculate the predictions for the 21-cm intensity mapping power spectra, and forecast the detectability with future single-dish intensity mapping surveys (BINGO, FAST and SKA-I). Since dark energy is turned on at $z\sim 1$, which falls into the sensitivity range of these radio surveys, the HI intensity mapping technique is an efficient tool to constrain the interaction. By comparing with current constraints on dark sector interactions, we find that future radio surveys will produce tight and reliable constraints on the coupling parameters.

astro-ph.CO↗

arXiv2018

Electrical Control of 2D Magnetism in Bilayer CrI3

The challenge of controlling magnetism using electric fields raises fundamental questions and addresses technological needs such as low-dissipation magnetic memory. The recently reported two-dimensional (2D) magnets provide a new system for studying this problem owing to their unique magnetic properties. For instance, bilayer chromium triiodide (CrI3) behaves as a layered antiferromagnet with a magnetic field-driven metamagnetic transition. Here, we demonstrate electrostatic gate control of magnetism in CrI3 bilayers, probed by magneto-optical Kerr effect (MOKE) microscopy. At fixed magnetic fields near the metamagnetic transition, we realize voltage-controlled switching between antiferromagnetic and ferromagnetic states. At zero magnetic field, we demonstrate a time-reversal pair of layered antiferromagnetic states which exhibit spin-layer locking, leading to a remarkable linear dependence of their MOKE signals on gate voltage with opposite slopes. Our results pave the way for exploring new magnetoelectric phenomena and van der Waals spintronics based on 2D materials.

cond-mat.mes-hall↗

arXiv2018

Two-Dimensional Itinerant Ising Ferromagnetism in Atomically thin Fe3GeTe2

Recent discoveries of intrinsic two-dimensional (2D) ferromagnetism in insulating/semiconducting van der Waals (vdW) crystals open up new possibilities for studying fundamental 2D magnetism and devices employing localized spins. However, a vdW material that exhibits 2D itinerant magnetism remains elusive. In fact, the synthesis of such single-crystal ferromagnetic metals with strong perpendicular anisotropy at the atomically thin limit has been a long-standing challenge. Here, we demonstrate that monolayer Fe3GeTe2 is a robust 2D itinerant ferromagnet with strong out-of-plane anisotropy. Layer-dependent studies reveal a crossover from 3D to 2D Ising ferromagnetism for thicknesses less than 4 nm (five layers), accompanying a fast drop of the Curie temperature from 207 K down to 130 K in the monolayer. For Fe3GeTe2 flakes thicker than ~15 nm, a peculiar magnetic behavior emerges within an intermediate temperature range, which we show is due to the formation of labyrinthine domain patterns. Our work introduces a novel atomically thin ferromagnetic metal that could be useful for the study of controllable 2D itinerant Ising ferromagnetism and for engineering spintronic vdW heterostructures.

cond-mat.mes-hall↗

arXiv2018

Giant Tunneling Magnetoresistance in Spin-Filter van der Waals Heterostructures

Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here we report novel multiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals (vdW) heterostructures in which atomically thin chromium triiodide (CrI3) acts as a spin-filter tunnel barrier sandwiched between graphene contacts. We demonstrate tunneling magnetoresistance which is drastically enhanced with increasing CrI3 layer thickness, reaching a record 19,000% for magnetic multilayer structures using four-layer sf-MTJs at low temperatures. These devices also show multiple resistance states as a function of magnetic field, suggesting the potential for multi-bit functionalities using an individual vdW sf-MTJ. Using magnetic circular dichroism measurements, we attribute these effects to the intrinsic layer-by-layer antiferromagnetic ordering of the atomically thin CrI3. Our work reveals the possibility to push magnetic information storage to the atomically thin limit, and highlights CrI3 as a superlative magnetic tunnel barrier for vdW heterostructure spintronic devices.

cond-mat.mes-hall↗

arXiv2018

Magneto-Optics of Exciton Rydberg States in a Monolayer Semiconductor

We report 65 tesla magneto-absorption spectroscopy of exciton Rydberg states in the archetypal monolayer semiconductor WSe$_2$. The strongly field-dependent and distinct energy shifts of the 2s, 3s, and 4s excited neutral excitons permits their unambiguous identification and allows for quantitative comparison with leading theoretical models. Both the sizes (via low-field diamagnetic shifts) and the energies of the $ns$ exciton states agree remarkably well with detailed numerical simulations using the non-hydrogenic screened Keldysh potential for 2D semiconductors. Moreover, at the highest magnetic fields the nearly-linear diamagnetic shifts of the weakly-bound 3s and 4s excitons provide a direct experimental measure of the exciton's reduced mass, $m_r = 0.20 \pm 0.01~m_0$.

cond-mat.mes-hall↗

arXiv2017

Tuning Ising superconductivity with layer and spin-orbit coupling in two-dimensional transition-metal dichalcogenides

Systems that simultaneously exhibit superconductivity and spin-orbit coupling are predicted to provide a route toward topological superconductivity and unconventional electron pairing, driving significant contemporary interest in these materials. Monolayer transition-metal dichalcogenide (TMD) superconductors in particular lack inversion symmetry, enforcing a spin-triplet component of the superconducting wavefunction that increases with the strength of spin-orbit coupling. In this work, we present an experimental and theoretical study of two intrinsic TMD superconductors with large spin-orbit coupling in the atomic layer limit, metallic 2H-TaS$_2$ and 2H-NbSe$_2$. For the first time in TaS$_2$, we investigate the superconducting properties as the material is reduced to a monolayer and show that high-field measurements point to the largest upper critical field thus reported for an intrinsic TMD superconductor. In few-layer samples, we find that the enhancement of the upper critical field is sustained by the dominance of spin-orbit coupling over weak interlayer coupling, providing additional platforms for unconventional superconducting states in two dimensions.

cond-mat.supr-con↗

arXiv2017

Phonon-assisted oscillatory exciton dynamics in monolayer MoSe2

In monolayer semiconductor transition metal dichalcogenides, the exciton-phonon interaction is expected to strongly affect the photocarrier dynamics. Here, we report on an unusual oscillatory enhancement of the neutral exciton photoluminescence with the excitation laser frequency in monolayer MoSe2. The frequency of oscillation matches that of the M-point longitudinal acoustic phonon, LA(M). Oscillatory behavior is also observed in the steady-state emission linewidth and in timeresolved photoluminescence excitation data, which reveals variation with excitation energy in the exciton lifetime. These results clearly expose the key role played by phonons in the exciton formation and relaxation dynamics of two-dimensional van der Waals semiconductors.

cond-mat.mtrl-sci↗

arXiv2017

Moiré excitons: from programmable quantum emitter arrays to spin-orbit coupled artificial lattices

Highly uniform and ordered nanodot arrays are crucial for high performance quantum optoelectronics including new semiconductor lasers and single photon emitters, and for synthesizing artificial lattices of interacting quasiparticles towards quantum information processing and simulation of many-body physics. Van der Waals heterostructures of 2D semiconductors are naturally endowed with an ordered nanoscale landscape, i.e. the moiré pattern that laterally modulates electronic and topographic structures. Here we find these moiré effects realize superstructures of nanodot confinements for long-lived interlayer excitons, which can be either electrically or strain tuned from perfect arrays of quantum emitters to excitonic superlattices with giant spin-orbit coupling (SOC). Besides the wide range tuning of emission wavelength, the electric field can also invert the spin optical selection rule of the emitter arrays. This unprecedented control arises from the gauge structure imprinted on exciton wavefunctions by the moiré, which underlies the SOC when hopping couples nanodots into superlattices. We show that the moiré hosts complex-hopping honeycomb superlattices, where exciton bands feature a Dirac node and two Weyl nodes, connected by spin-momentum locked topological edge modes.

cond-mat.mes-hall↗

arXiv2017

Ligand-field helical luminescence in a 2D ferromagnetic insulator

Bulk chromium triiodide (CrI$_3$) has long been known as a layered van der Waals ferromagnet. However, its monolayer form was only recently isolated and confirmed to be a truly two-dimensional (2D) ferromagnet, providing a new platform for investigating light-matter interactions and magneto-optical phenomena in the atomically thin limit. Here, we report spontaneous circularly polarized photoluminescence in monolayer CrI$_3$ under linearly polarized excitation, with helicity determined by the monolayer magnetization direction. In contrast, the bilayer CrI$_3$ photoluminescence exhibits vanishing circular polarization, supporting the recently uncovered anomalous antiferromagnetic interlayer coupling in CrI$_3$ bilayers. Distinct from the Wannier-Mott excitons that dominate the optical response in well-known 2D van der Waals semiconductors, our absorption and layer-dependent photoluminescence measurements reveal the importance of ligand-field and charge-transfer transitions to the optoelectronic response of atomically thin CrI$_3$. We attribute the photoluminescence to a parity-forbidden d-d transition characteristic of Cr$^{3+}$ complexes, which displays broad linewidth due to strong vibronic coupling and thickness-independent peak energy due to its localized molecular orbital nature.

cond-mat.mes-hall↗

arXiv2017

Encapsulated silicon nitride nanobeam cavity for nanophotonics using layered materials

Most existing implementations of silicon nitride photonic crystal cavities rely on suspended membranes due to the low refractive index of silicon nitride. Such floating membranes are not mechanically robust, making them suboptimal for developing a hybrid optoelectronic platform where new materials, such as layered 2D materials, are transferred on a pre-existing optical cavity. To address this issue, we propose a silicon nitride nanobeam resonator design where the silicon nitride membrane is encapsulated by material with a refractive index of ~1.5, such as silicon dioxide or PMMA. The theoretically calculated quality factor of the cavities can be as large as 100,000 , with a mode-volume of 2.5 times the cubic wavelength. We fabricated the cavity, and measured the transmission spectrum with highest quality factor of 7000. We also successfully transferred monolayer tungsten diselenide on the encapsulated silicon nitride nanobeam, and demonstrated coupling of the cavity with the monolayer exciton and the defect emissions.

cond-mat.mes-hall↗

arXiv2017

A Note on Upper Bounds for Some Generalized Folkman Numbers

We present some new constructive upper bounds based on product graphs for generalized vertex Folkman numbers. They lead to new upper bounds for some special cases of generalized edge Folkman numbers, including $F_e(K_3,K_4-e; K_5) \leq 27$ and $F_e(K_4-e,K_4-e; K_5) \leq 51$. The latter bound follows from a construction of a $K_5$-free graph on 51 vertices, for which every coloring of its edges with two colors contains a monochromatic $K_4-e$.

math.CO↗