arXiv subjects

Xiaodong Xu

Publications and source records attributed to Xiaodong Xu.

At least 361 records · Page 20Linked to original sources

arXiv2013

Bounds on Shannon Capacity and Ramsey Numbers from Product of Graphs

In this note we study Shannon capacity of channels in the context of classical Ramsey numbers. We overview some of the results on capacity of noisy channels modelled by graphs, and how some constructions may contribute to our knowledge of this capacity. We present an improvement to the constructions by Abbott and Song and thus establish new lower bounds for a special type of multicolor Ramsey numbers. We prove that our construction implies that the supremum of the Shannon capacity over all graphs with independence number 2 cannot be achieved by any finite graph power. This can be generalized to graphs with any bounded independence number.

math.CO↗

arXiv2012

Photoresponse of a strongly correlated material determined by scanning photocurrent microscopy

The generation of a current by light is a key process in optoelectronic and photovoltaic devices. In band semiconductors, depletion fields associated with interfaces separate long-lived photo-induced carriers. However, in systems with strong electron-electron and electron-phonon correlations it is unclear what physics will dominate the photoresponse. Here we investigate photocurrent in a vanadium dioxide, an exemplary strongly correlated material known for its dramatic metal-insulator transition (MIT) at Tc = 68 C which could be useful for optoelectronic detection and switching up to ultraviolet wavelengths. Using scanning photocurrent microscopy (SPCM) on individual suspended VO2 nanobeams we observe photoresponse peaked at the metal-insulator boundary but extended throughout both insulating and metallic phases. We determine that the response is photo-thermal, implying efficient carrier relaxation to a local equilibrium in a manner consistent with strong correlations. Temperature dependent measurements reveal subtle phase changes within the insulating state. We further demonstrate switching of the photocurrent by optical control of the metal-insulator boundary arrangement. Our work shows the value of SPCM applied to nanoscale crystals for investigating strongly correlated materials, and the results are relevant for designing and controlling optoelectronic devices employing such materials.

cond-mat.str-el↗

arXiv2012

Electrical Tuning of Valley Magnetic Moment via Symmetry Control

Crystal symmetry governs the nature of electronic Bloch states. For example, in the presence of time reversal symmetry, the orbital magnetic moment and Berry curvature of the Bloch states must vanish unless inversion symmetry is broken. In certain 2D electron systems such as bilayer graphene, the intrinsic inversion symmetry can be broken simply by applying a perpendicular electric field. In principle, this offers the remarkable possibility of switching on/off and continuously tuning the magnetic moment and Berry curvature near the Dirac valleys by reversible electrical control. Here we demonstrate this principle for the first time using bilayer MoS2, which has the same symmetry as bilayer graphene but has a bandgap in the visible that allows direct optical probing of these Berry-phase related properties. We show that the optical circular dichroism, which reflects the orbital magnetic moment in the valleys, can be continuously tuned from -15% to 15% as a function of gate voltage in bilayer MoS2 field-effect transistors. In contrast, the dichroism is gate-independent in monolayer MoS2, which is structurally non-centrosymmetric. Our work demonstrates the ability to continuously vary orbital magnetic moments between positive and negative values via symmetry control. This represents a new approach to manipulating Berry-phase effects for applications in quantum electronics associated with 2D electronic materials.

cond-mat.mes-hall↗

arXiv2012

Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides

We show that inversion symmetry breaking together with spin-orbit coupling leads to coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides, making possible controls of spin and valley in these 2D materials. The spin-valley coupling at the valence band edges suppresses spin and valley relaxation, as flip of each index alone is forbidden by the valley contrasting spin splitting. Valley Hall and spin Hall effects coexist in both electron-doped and hole-doped systems. Optical interband transitions have frequency-dependent polarization selection rules which allow selective photoexcitation of carriers with various combination of valley and spin indices. Photo-induced spin Hall and valley Hall effects can generate long lived spin and valley accumulations on sample boundaries. The physics discussed here provides a route towards the integration of valleytronics and spintronics in multi-valley materials with strong spin-orbit coupling and inversion symmetry breaking.

cond-mat.mes-hall↗

arXiv2012

Quantum-Enhanced Tunable Second-Order Optical Nonlinearity in Bilayer Graphene

Second order optical nonlinear processes involve the coherent mixing of two electromagnetic waves to generate a new optical frequency, which plays a central role in a variety of applications, such as ultrafast laser systems, rectifiers, modulators, and optical imaging. However, progress is limited in the mid-infrared (MIR) region due to the lack of suitable nonlinear materials. It is desirable to develop a robust system with a strong, electrically tunable second order optical nonlinearity. Here we demonstrate theoretically that AB-stacked bilayer graphene (BLG) can exhibit a giant and tunable second order nonlinear susceptibility χ^(2) once an in-plane electric field is applied. χ^(2) can be electrically tuned from 0 to ~ {10^5 pm/V}, three orders of magnitude larger than the widely used nonlinear crystal AgGaSe2. We show that the unusually large χ^(2) arises from two different quantum enhanced two-photon processes thanks to the unique electronic spectrum of BLG. The tunable electronic bandgap of BLG adds additional tunability on the resonance of χ^(2), which corresponds to a tunable wavelength ranging from ~2.6 μm to ~3.1 μm for the up-converted photon. Combined with the high electron mobility and optical transparency of the atomically thin BLG, our scheme suggests a new regime of nonlinear photonics based on BLG.

cond-mat.mes-hall↗

arXiv2011

New Aspects of Photocurrent Generation at Graphene pn Junctions Revealed by Ultrafast Optical Measurements

The unusual electrical and optical properties of graphene make it a promising candidate for optoelectronic applications. An important, but as yet unexplored aspect is the role of photo-excited hot carriers in charge and energy transport at graphene interfaces. Here, we perform time-resolved (~250 fs) scanning photocurrent microscopy on a tunable graphene pn junction. The ultrafast pump-probe measurements yield a photocurrent response time of ~1.5 ps at room temperature increasing to ~4 ps at 20 K. Combined with the negligible dependence of photocurrent amplitude on environmental temperature this implies that hot carriers rather than phonons dominate energy transport at high frequencies. Gate-dependent pump-probe measurements demonstrate that both thermoelectric and built-in electric field effects contribute to the photocurrent excited by laser pulses. The relative weight of each contribution depends on the junction configuration. A single laser beam excitation also displays multiple polarity-reversals as a function of carrier density, a signature of impact ionization. Our results enhance the understanding of non-equilibrium electron dynamics, electron-electron interactions, and electron-phonon interactions in graphene. They also determine fundamental limits on ultrafast device operation speeds (~500 GHz) for potential graphene-based photon detection, sensing, and communication.

cond-mat.mes-hall↗

arXiv2010

Fast spin rotations by optically controlled geometric phases in a quantum dot

We demonstrate optical control of the geometric phase acquired by one of the spin states of an electron confined in a charge-tunable InAs quantum dot via cyclic 2pi excitations of an optical transition in the dot. In the presence of a constant in-plane magnetic field, these optically induced geometric phases result in the effective rotation of the spin about the magnetic field axis and manifest as phase shifts in the spin quantum beat signal generated by two time-delayed circularly polarized optical pulses. The geometric phases generated in this manner more generally perform the role of a spin phase gate, proving potentially useful for quantum information applications.

cond-mat.mes-hall↗

arXiv2009

Photo-Thermoelectric Effect at a Graphene Interface Junction

We investigate the optoelectronic response of a graphene interface junction, formed with bilayer and single-layer graphene, by photocurrent (PC) microscopy. We measure the polarity and amplitude of the PC while varying the Fermi level by tuning a gate voltage. These measurements show that the generation of PC is by a photo-thermoelectric effect. The PC displays a factor of ~10 increase at the cryogenic temperature as compared to room temperature. Assuming the thermoelectric power has a linear dependence on the temperature, the inferred graphene thermal conductivity from temperature dependent measurements has a T^{1.5} dependence below ~100 K, which agrees with recent theoretical predictions.

cond-mat.mes-hall↗

arXiv2009

All-Optical Ultrafast Control and Read-Out of a Single Negatively Charged Self-Assembled InAs Quantum Dot

We demonstrate the all-optical ultrafast manipulation and read-out of optical transitions in a single negatively charged self-assembled InAs quantum dot, an important step towards ultrafast control of the resident spin. Experiments performed at zero magnetic field show the excitation and decay of the trion (negatively charged exciton) as well as Rabi oscillations between the electron and trion states. Application of a DC magnetic field perpendicular to the growth axis of the dot enables observation of a complex quantum beat structure produced by independent precession of the ground state electron and the excited state heavy hole spins.

cond-mat.mes-hall↗

arXiv2008

Coherent Population Trapping of an Electron Spin in a Single Negatively Charged Quantum Dot

Coherent population trapping (CPT) refers to the steady-state trapping of population in a coherent superposition of two ground states which are coupled by coherent optical fields to an intermediate state in a three-level atomic system. Recently, CPT has been observed in an ensemble of donor bound spins in GaAs and in single nitrogen vacancy centers in diamond by using a fluorescence technique. Here we report the demonstration of CPT of an electron spin in a single quantum dot (QD) charged with one electron.

cond-mat.mes-hall↗

arXiv2008

Stimulated Raman spin coherence and spin-flip induced hole burning in charged GaAs quantum dots

High-resolution spectral hole burning (SHB) in coherent nondegenerate differential transmission spectroscopy discloses spin-trion dynamics in an ensemble of negatively charged quantum dots. In the Voigt geometry, stimulated Raman spin coherence gives rise to Stokes and anti-Stokes sidebands on top of the trion spectral hole. The prominent feature of an extremely narrow spike at zero detuning arises from spin population pulsation dynamics. These SHB features confirm coherent electron spin dynamics in charged dots, and the linewidths reveal spin spectral diffusion processes.

cond-mat.mes-hall↗

arXiv2008

A Single Charged Quantum Dot in a Strong Optical Field: Absorption, Gain, and the AC Stark Effect

We investigate a singly-charged quantum dot under a strong optical driving field by probing the system with a weak optical field. When the driving field is detuned from the trion transition, the probe absorption spectrum is shifted from the trion resonance as a consequence of the dynamic Stark effect. Simultaneously, a gain sideband is created, resulting from the coherent energy transfer between the optical fields through the quantum dot nonlinearity. As the pump detuning is moved from red to blue, we map out the anticrossing of these two spectral lines. The optical Bloch equations for a stationary two-level atom can be used to describe the numerous spectral features seen in this nano solid state system.

cond-mat.mes-hall↗

arXiv2006

Fast initialization of the spin state of an electron in a quantum dot in the Voigt configuration

We consider the initialization of the spin-state of a single electron trapped in a self-assembled quantum dot via optical pumping of a trion level. We show that with a magnetic field applied perpendicular to the growth direction of the dot, a near-unity fidelity can be obtained in a time equal to a few times the inverse of the spin-conserving trion relaxation rate. This method is several orders-of-magnitude faster than with the field aligned parallel, since this configuration must rely on a slow hole spin-flip mechanism. This increase in speed does result in a limit on the maximum obtainable fidelity, but we show that for InAs dots, the error is very small.

cond-mat.mes-hall↗

arXiv2005

Stimulated and spontaneous optical generation of electron spin coherence in charged GaAs quantum dots

We report on the coherent optical excitation of electron spin polarization in the ground state of charged GaAs quantum dots via an intermediate charged exciton (trion) state. Coherent optical fields are used for the creation and detection of the Raman spin coherence between the spin ground states of the charged quantum dot. The measured spin decoherence time, which is likely limited by the nature of the spin ensemble, approaches 10 ns at zero field. We also show that the Raman spin coherence in the quantum beats is caused not only by the usual stimulated Raman interaction but also by simultaneous spontaneous radiative decay of either excited trion state to a coherent combination of the two spin states.

cond-mat.mes-hall↗

arXiv2003

Phase-transition-like Behavior of Quantum Games

The discontinuous dependence of the properties of a quantum game on its entanglement has been shown up to be very much like phase transitions viewed in the entanglement-payoff diagram [J. Du et al., Phys. Rev. Lett, 88, 137902 (2002)]. In this paper we investigate such phase-transition-like behavior of quantum games, by suggesting a method which would help to illuminate the origin of such kind of behavior. For the particular case of the generalized Prisoners' Dilemma, we find that, for different settings of the numerical values in the payoff table, even though the classical game behaves the same, the quantum game exhibits different and interesting phase-transition-like behavior.

quant-ph↗

arXiv2003

Experimental Implementation of the Quantum Random-Walk Algorithm

The quantum random walk is a possible approach to construct new quantum algorithms. Several groups have investigated the quantum random walk and experimental schemes were proposed. In this paper we present the experimental implementation of the quantum random walk algorithm on a nuclear magnetic resonance quantum computer. We observe that the quantum walk is in sharp contrast to its classical counterpart. In particular, the properties of the quantum walk strongly depends on the quantum entanglement.

quant-ph↗

arXiv2003

Playing Prisoner's Dilemma with Quantum Rules

Quantum game theory is a recently developing field of physical research. In this paper, we investigate quantum games in a systematic way. With the famous instance of the Prisoner's Dilemma, we present the fascinating properties of quantum games in different conditions, i.e. different number of the players, different strategic space of the players and different amount of the entanglement involved.

quant-ph↗

arXiv2003

Entanglement Enhanced Multiplayer Quantum Games

We investigate the 3-player quantum Prisoner's Dilemma with a certain strategic space, a particular Nash equilibrium that can remove the original dilemma is found. Based on this equilibrium, we show that the game is enhanced by the entanglement of its initial state.

quant-ph↗