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Xiaodong Yan

Publications and source records attributed to Xiaodong Yan.

At least 37 records · Page 2Linked to original sources

Optimal model averaging forecasting in high-dimensional survival analysis

This article considers ultrahigh-dimensional forecasting problems with survival response variables. We propose a two-step model averaging procedure for improving the forecasting accuracy of the true conditional mean of a survival response variable. The first step is to construct a class of candidate models, each with low-dimensional covariates. For this, a feature screening procedure is developed to separate the active and inactive predictors through a marginal BuckleyCJames index, and to group covariates with a similar index size together to form regression models with survival response variables. The proposed screening method can select active predictors under covariate-dependent censoring, and enjoys sure screening consistency under mild regularity conditions. The second step is to find the optimal model weights for averaging by adapting a delete-one cross-validation criterion, without the standard constraint that the weights sum to one. The theoretical results show that the delete-one cross-validation criterion achieves the lowest possible forecasting loss asymptotically. Numerical studies demonstrate the superior performance of the proposed variable screening and model averaging procedures over existing methods.

stat.ME↗

Spearman Rank Correlation Screening for Ultrahigh-dimensional Censored Data

Herein, we propose a Spearman rank correlation based screening procedure for ultrahigh-dimensional data with censored response case. The proposed method is model-free without specifying any regression forms of predictors or response variable and is robust under the unknown monotone transformations of these response variable and predictors. The sure-screening and rank-consistency properties are established under some mild regularity conditions. Simulation studies demonstrate that the new screening method performs well in the presence of a heavy-tailed distribution, strongly dependent predictors or outliers and that offers superior performance over the existing nonparametric screening procedures. In particular, the new screening method still works well when a response variable is observed under a high censoring rate. An illustrative example is provided.

stat.ME↗

Long bet will lose: demystifying seemingly fair gambling via two-armed Futurity bandit

No matter how much some gamblers occasionally win, as long as they continue to gamble, sooner or later they will lose more to the casino, which is the so-called long bet will lose. Our results demonstrate the counter-intuitive phenomenon, that gamblers involved in long bets will lose but casinos always advertise their unprofitable circumstances. Here we expose the law of inevitability behind long bet will loss by theoretically and experimentally demystifying the profitable mystery behind casinos under two-armed antique Mills Futurity slot machine. The main results straightforwardly elucidate that all casino projects are seemingly a fair gamble but essentially unfair, i.e., the casino's win rate is greater than 50%. We anticipate our assay to be a starting point for studying the fairness of more sophisticated multi-armed Futurity bandits based on the mathematical tool. In application, a fairness study of the Futurity bandits not only exposes the fraud of casinos for gamblers but also discloses discount marketing, bundled sales, or other induced consumption tactics.

q-fin.GN↗

Nonlinear approximation of 3D smectic liquid crystals: sharp lower bound and compactness

We consider the 3D smectic energy $$\mathcal{E}_{ε}\left( u\right) =\frac{1}{2}\int_{Ω}\frac{1}{\varepsilon } \left( u_z-\frac{( u_x)^{2}+( u_y)^{2}}{2}\right) ^{2}+\varepsilon \left( u_{xx}+u_{yy}\right)^{2}\,dx\,dy\,dz. $$ The model contains as a special case the well-known 2D Aviles-Giga model. We prove a sharp lower bound on $\mathcal{E}_{\varepsilon}$ as $\varepsilon \to 0$ by introducing 3D analogues of the Jin-Kohn entropies. The sharp bound corresponds to an equipartition of energy between the bending and compression strains and was previously demonstrated in the physics literature only when the approximate Gaussian curvature of each smectic layer vanishes. Also, for $\varepsilon_{n}\rightarrow 0$ and an energy-bounded sequence $\{u_n \}$ with $\|\nabla u_n\|_{L^{p}(Ω)},\,\|\nabla u_n\|_{L^2(\partial Ω)}\leq C$ for some $p>6$, we obtain compactness of $\nabla u_{n}$ in $L^{2}$ assuming that $Δ_{xy}u_{n}$ has constant sign for each $n$.

math.AP↗

Well-posedness of a modified degenerate Cahn-Hilliard model for surface diffusion

We study the well-posedness of a modified degenerate Cahn-Hilliard type model for surface diffusion. With degenerate phase-dependent diffusion mobility and additional stabilizing function, this model is able to give the correct sharp interface limit. We introduce a notion of weak solutions for the nonlinear model. The existence result is obtained by approximations of the proposed model with nondegenerate mobilities. We also employ this method to prove existence of weak solutions to a related model where the chemical potential contains a nonlocal term originated from self-climb of dislocations in crystalline materials.

math.AP↗

Bi-integrative analysis of two-dimensional heterogeneous panel data model

Heterogeneous panel data models that allow the coefficients to vary across individuals and/or change over time have received increasingly more attention in statistics and econometrics. This paper proposes a two-dimensional heterogeneous panel regression model that incorporate a group structure of individual heterogeneous effects with cohort formation for their time-variations, which allows common coefficients between nonadjacent time points. A bi-integrative procedure that detects the information regarding group and cohort patterns simultaneously via a doubly penalized least square with concave fused penalties is introduced. We use an alternating direction method of multipliers (ADMM) algorithm that automatically bi-integrates the two-dimensional heterogeneous panel data model pertaining to a common one. Consistency and asymptotic normality for the proposed estimators are developed. We show that the resulting estimators exhibit oracle properties, i.e., the proposed estimator is asymptotically equivalent to the oracle estimator obtained using the known group and cohort structures. Furthermore, the simulation studies provide supportive evidence that the proposed method has good finite sample performance. A real data empirical application has been provided to highlight the proposed method.

econ.EM↗

Compactness and sharp lower bound for a 2D smectics model

We consider a 2D smectics model \begin{equation*} E_{ε}\left( u\right) =\frac{1}{2}\int_Ω\frac{1}{\varepsilon }\left( u_{z}-\frac{1% }{2}u_{x}^{2}\right) ^{2}+\varepsilon \left( u_{xx}\right) ^{2}dx\,dz. \end{equation*} For $\varepsilon _{n}\rightarrow 0$ and a sequence $\left\{ u_{n}\right\} $ with bounded energies $E_{\varepsilon _{n}}\left(u_{n}\right) ,$ we prove compactness of $\{\partial_z u_{n}\}$ in $L^{2}$ and $\{\partial_x u_n\}$ in $L^q$ for any $1\leq q 6$. We also prove a sharp lower bound on $E_{\varepsilon }$ when $\varepsilon\rightarrow 0.$ The sharp bound corresponds to the energy of a 1D ansatz in the transition region.

math.AP↗

Phase field model for self-climb of prismatic dislocation loops by vacancy pipe diffusion

In this paper, we present a phase field model for the self-climb motion of prismatic dislocation loops via vacancy pipe diffusion driven by elastic interactions. This conserved dynamics model is developed under the framework of the Cahn-Hilliard equation with incorporation of the climb force on dislocations, and is based on the dislocation self-climb velocity formulation established in Ref.[1]. The phase field model has the advantage of being able to handle the topological and geometrical changes automatically during the simulations. Asymptotic analysis shows that the proposed phase field model gives the dislocation self-climb velocity accurately in the sharp interface limit. Numerical simulations of evolution, translation, coalescence and repelling of prismatic loops by self-climb show excellent agreement with discrete dislocation dynamics simulation results and the experimental observation.

cond-mat.mtrl-sci↗

Atomically-thin Femtojoule Filamentary Memristor

The morphology and dimension of the conductive filament formed in a memristive device are strongly influenced by the thickness of its switching medium layer. Aggressive scaling of this active layer thickness is critical towards reducing the operating current, voltage and energy consumption in filamentary type memristors. Previously, the thickness of this filament layer has been limited to above a few nanometers due to processing constraints, making it challenging to further suppress the on-state current and the switching voltage. Here, we study the formation of conductive filaments in a material medium with sub-nanometer thickness, formed through the oxidation of atomically-thin two-dimensional boron nitride. The resulting memristive device exhibits sub-nanometer filamentary switching with sub-pA operation current and femtojoule per bit energy consumption. Furthermore, by confining the filament to the atomic scale, we observe current switching characteristics that are distinct from that in thicker medium due to the profoundly different atomic kinetics. The filament morphology in such an aggressively scaled memristive device is also theoretically explored. These ultra-low energy devices are promising for realizing femtojoule and sub-femtojoule electronic computation, which can be attractive for applications in a wide range of electronics systems that desire ultra-low power operation.

physics.app-ph↗

Spatial-Temporal Imaging of Anisotropic Photocarrier Dynamics in Black Phosphorus

As an emerging single elemental layered material with a low symmetry in-plane crystal lattice, black phosphorus (BP) has attracted significant research interest owing to its unique electronic and optoelectronic properties, including its widely tunable bandgap, polarization dependent photoresponse and highly anisotropic in-plane charge transport. Despite extensive study of the steady-state charge transport in BP, there has not been direct characterization and visualization of the hot carriers dynamics in BP immediately after photoexcitation, which is crucial to understanding the performance of BP-based optoelectronic devices. Here we use the newly developed scanning ultrafast electron microscopy (SUEM) to directly visualize the motion of photo-excited hot carriers on the surface of BP in both space and time. We observe highly anisotropic in-plane diffusion of hot holes, with a 15-times higher diffusivity along the armchair (x-) direction than that along the zigzag (y-) direction. Our results provide direct evidence of anisotropic hot carrier transport in BP and demonstrate the capability of SUEM to resolve ultrafast hot carrier dynamics in layered two-dimensional materials.

cond-mat.mtrl-sci↗

Low-Symmetry Two-Dimensional Materials for Electronic and Photonic Applications

In this review article, we discuss the synthesis, properties, and novel device applications of low-symmetry 2D materials, including black phosphorus and its arsenic alloys, compounds with black-phosphorus like structure such as the monochalcogenides of group IV elements like Ge and Sn, as well as the class of low-symmetry transition metal dichalcogenide (TMDC) materials such as rhenium disulfide (ReS2) and rhenium diselenide (ReSe2). Their unique physical properties resulting from the low symmetry in-plane crystal structure and the prospects of their application in nanoelectronics and nanophotonics, as well as piezoelectric devices and thermoelectrics are discussed.

cond-mat.mtrl-sci↗

Strained GaN Quantum-Well FETs on Single Crystal Bulk AlN Substrates

We report the first realization of molecular beam epitaxy grown strained GaN quantum well field-effect transistors on single-crystal bulk AlN substrates. The fabricated double heterostructure FETs exhibit a two- dimensional electron gas (2DEG) density in excess of 2x10^13/cm2. Ohmic contacts to the 2DEG channel were formed by n+ GaN MBE regrowth process, with a contact resistance of 0.13 Ohm-mm. Raman spectroscopy using the quantum well as an optical marker reveals the strain in the quantum well, and strain relaxation in the regrown GaN contacts. A 65-nm-long rectangular-gate device showed a record high DC drain current drive of 2.0 A/mm and peak extrinsic transconductance of 250 mS/mm. Small-signal RF performance of the device achieved current gain cutoff frequency fT~120 GHz. The DC and RF performance demonstrate that bulk AlN substrates offer an attractive alternative platform for strained quantum well nitride transistors for future high-voltage and high-power microwave applications.

cond-mat.mtrl-sci↗

The Brezis-Nirenberg problem for fractional elliptic operators

In the present paper, we study the effect of an elliptic operator in divergence form L defined in a bounded open set on the existence and nonexistence of positive solutions of the associated nonlocal Brezis-Nirenberg problem involving powers of L.

math.AP↗

Uniqueness of one-dimensional Néel wall profiles

We study the domain wall structure in thin uniaxial ferromagnetic films in the presence of an in-plane applied external field in the direction normal to the easy axis. Using the reduced one-dimensional thin film micromagnetic model, we analyze the critical points of the obtained non-local variational problem. We prove that the minimizer of the one-dimensional energy functional in the form of the Néel wall is the unique (up to translations) critical point of the energy among all monotone profiles with the same limiting behavior at infinity. Thus, we establish uniqueness of the one-dimensional monotone Néel wall profile in the considered setting. We also obtain some uniform estimates for general one-dimensional domain wall profiles.

math.AP↗

Polarization-induced Zener Tunnel Diodes in GaN/InGaN/GaN Heterojunctions

By the insertion of thin InGaN layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium composition in the InGaN layer is systematically varied to demonstrate the increase in the interband tunneling current. Comparing the experimentally measured tunneling currents to a model helps identify the specific challenges in potentially taking such junctions towards nitride-based polarization-induced tunneling field-effect transistors.

cond-mat.mes-hall↗

Dual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N Isotopes

This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual marker method for Raman spectroscopy. By combining these techniques, we demonstrate the effectiveness in studying strain in the vertical direction. This technique will enable the precise probing of properties of buried active layers in heterostructures, and can be extended in the future to vertical devices such as those used for optical emitters, and for power electronics.

cond-mat.mtrl-sci↗

Random Multipliers Numerically Stabilize Gaussian and Block Gaussian Elimination: Proofs and an Extension to Low-rank Approximation

We prove that standard Gaussian random multipliers are expected to numerically stabilize both Gaussian elimination with no pivoting and block Gaussian elimination. Moreover we prove that such a multiplier (even without the customary oversampling) is expected to support low-rank approximation of a matrix. Our test results are in good accordance with this analysis. Empirically random circulant or Toeplitz multipliers are as efficient as Gaussian ones, but their formal support is more problematic.

math.NA↗

Supporting GENP with Random Multipliers

We prove that standard Gaussian random multipliers are expected to stabilize numerically both Gaussian elimination with no pivoting and block Gaussian elimination. Our tests show similar results where we applied circulant random multipliers instead of Gaussian ones.

math.NA↗