arXiv subjects

Xiaoguang Luo

Publications and source records attributed to Xiaoguang Luo.

15 recordsLinked to original sources

arXiv2026

Spatiotemporal programming via asymmetric dielectric engineering for nonvolatile 2D optoelectronics

Ambipolar two dimensional (2D) semiconductors integrated with floating-gate architectures offer a promising platform for nonvolatile, reconfigurable electronics. However, the switching between p-n and n-p junction polarities has conventionally required complex multi-gate designs, hindering the scalability and integration density. Here, we demonstrate a spatiotemporal programming strategy using a dual-floating-gate architecture with a symmetry broken tunneling dielectric. An asymmetric dielectric stack creates distinct tunneling thresholds for two floating gates, enabling a single input gate to encode spatial doping profiles in the 2D channel via defined voltage pulse sequences. We achieve on demand, nonvolatile, and reversible switching between p-n and n-p configurations with excellent retention and endurance. The reconfigurable homojunction serves as a multifunctional platform for logic encoding, rectification, photodetection, and in sensor computing. This work establishes a design paradigm that replaces spatial input complexity with spatiotemporal programming, paving the way for high-density, multifunctional intelligent hardware.

cond-mat.mes-hall↗

arXiv2026

High-speed and high-gain graphene photovoltaic phototransistor gated by a van der Waals heterojunction

Two-dimensional (2D) material-based phototransistors offer a unique combination of optical sensing, signal amplification, and logic operation within a single device, yet fundamentally suffering from an inherent gain-speed trade-off. Here, we demonstrate a 2D photovoltaic phototransistor that overcomes this limitation using a MoS2/PtSe2 heterojunction to gate a graphene channel. The ultrafast photovoltaic effect in the heterojunction enables charge separation, yielding ultrahigh photoconductive gain (up to 10^8) in graphene channel via interfacial gating. Besides, the response time (below the instrumental resolution of 550 ns) is governed by carrier transit in graphene channel, enabling simultaneous high speed and high gain. Moreover, broadband photodetection from visible to near-infrared is enabled by the optical properties of the MoS2/PtSe2 heterojunction, with the detectivity exceeding 10^11 Jones. These results establish a new paradigm for high-performance 2D phototransistors by harnessing photovoltaic and photogating effects to overcome the classical gain-speed trade-off.

cond-mat.mtrl-sci↗

arXiv2026

An on-chip programmable mechano-quantum transducer

Solid-state spin defects encode local perturbations as measurable shifts in spin-transition frequencies, but mechanical actuation and quantum readout remain physically separated, resulting in a discrete measurement setup. Integrating these functions requires an on-site mechano-quantum interface that programs the lattice state of a defect host and quantitatively maps it onto the spin Hamiltonian. Here we first report an on-chip programmable mechano-quantum transducer (OCPMQT) that integrates voltage-defined micromechanical actuation with in situ spin-frequency readout in a two-dimensional van der Waals quantum-defect host. Mechanically programmed lattice states are encoded as shifts in the axial zero-field splitting parameter and resolved by optically detected magnetic resonance (ODMR) spectroscopy. Within a chip volume of 2.05*10^-2 cm^3, the transducer accesses ODMR-inferred strains as low as 0.0080% and delivers a volumetric force density of approximately 2.6*10^4 N*m^-3. A micromechanical-to-spin-Hamiltonian framework links on-chip electromechanics, interfacial strain transfer, and strain-spin coupling, enabling the electrical control micromechanical input to be measured directly as spin-frequency response.

cond-mat.mes-hall↗

arXiv2025

Angle-dependent resonant tunneling and thermoelectric energy management in a hybrid 1D-2D-1D semiconductor nanostructure

Low-dimensional semiconductors have been widely exploited in thermoelectric energy conversion for high efficiencies due to their suppressed lattice thermal conduction, sharply defined electronic density of states, and tunable energy-selective electron transmission. However, the widespread challenge of Fermi-level pinning or doping constraints limit precise control over thermoelectric energy management via chemical potential modulation. Here, we proposed an alternative strategy: leveraging angle-dependent electron incidence to dynamically manipulate electron transmission and heat transport, which was implemented theoretically in a two-dimensional InP/InAs/InP double-barrier heterostructure integrated with laterally one-dimensional electrodes. By combining the transfer matrix method and Landauer formalism, we demonstrated the angle-dependent resonant tunneling dynamics, tunable negative differential resistance effect, and near-Carnot limits in thermoelectric energy conversions. Angular modulation enables precise control over transmission resonances, facilitating dynamic transitions among thermoelectric regimes (power generation, cooling, and hybrid heating) without requiring extreme chemical potential shifts. This work establishes angularly resolved electron transmission as a versatile mechanism for on-chip thermal management and cryogenic applications, offering a pathway to circumvent material limitations in next-generation nanoelectronics and quantum devices.

cond-mat.mes-hall↗

arXiv2023

Approaching the robust linearity in dual-floating van der Waals photodiode

Two-dimensional (2D) material photodetectors have gained great attention as potential elements for optoelectronic applications. However, the linearity of the photoresponse is often compromised by the carrier interaction, even in 2D photodiodes. In this study, we present a new device concept of dual-floating van der Waals heterostructures (vdWHs) photodiode by employing ambipolar MoTe2 and n-type MoS2 2D semiconductors. The presence of type II heterojunctions on both sides of channel layers effectively deplete carriers and restrict the photocarrier trapping within the channel layers. As a result, the device exhibits robust linear photoresponse under photovoltaic mode from the visible (405 nm) to near-infrared (1600 nm) band. With the built-in electric field of the vdWHs, we achieve a linear dynamic range of ~ 100 dB, responsivity of ~ 1.57 A/W, detectivity of ~ 4.28 * 10^11 Jones, and response speed of ~ 30 μs. Our results showcase a promising device concept with excellent linearity towards fast and low-loss detection, high-resolution imaging, and logic optoelectronics.

cond-mat.mes-hall↗

arXiv2023

Self-powered programmable van der Waals photodetectors with nonvolatile semi-floating gate

Tunable photovoltaic photodetectors are of significant relevance in the fields of programmable and neuromorphic optoelectronics. However, their widespread adoption is hindered by intricate architectural design and energy consumption challenges. This study employs a nonvolatile MoTe2/hBN/graphene semi-floating photodetector to address these issues. Programed with pulsed gate voltage, the MoTe2 channel can be reconfigured from an n+-n to a p-n homojunction, and the photocurrent transition changes from negative to positive values. Scanning photocurrent mapping reveals that the negative and positive photocurrents are attributed to Schottky junction and p-n homojunction, respectively. In the p-n configuration, the device demonstrates self-driven, linear, rapid response (~3 ms), and broadband sensitivity (from 405 to 1500 nm) for photodetection, with typical performances of responsivity at ~0.5 A/W and detectivity ~1.6*10^12 Jones under 635 nm illumination. These outstanding photodetection capabilities emphasize the potential of the semi-floating photodetector as a pioneering approach for advancing logical and nonvolatile optoelectronics.

cond-mat.mes-hall↗

arXiv2022

Tunable linearity of high-performance vertical dual-gate vdW phototransistor

Layered two-dimensional (2D) semiconductors have been widely exploited in photodetectors due to their excellent electronic and optoelectronic properties. To improve their performance, photogating, photoconductive, photovoltaic, photothermoelectric, and other effects have been used in phototransistors and photodiodes made with 2D semiconductors or hybrid structures. However, it is difficult to achieve the desired high responsivity and linear photoresponse simultaneously in a monopolar conduction channel or a p-n junction. Here we present dual-channel conduction with ambipolar multilayer WSe2 by employing the device concept of dual-gate phototransistor, where p-type and n-type channels are produced in the same semiconductor using opposite dual-gating. It is possible to tune the photoconductive gain using a vertical electric field, so that the gain is constant with respect to the light intensity-a linear photoresponse, with a high responsivity of ~2.5*10^4 A/W. Additionally, the 1/f noise of the device is kept at a low level under the opposite dual-gating due to the reduction of current and carrier fluctuation, resulting in a high detectivity of ~2*10^13 Jones in the linear photoresponse regime. The linear photoresponse and high performance of our dual-gate WSe2 phototransistor offer the possibility of achieving high-resolution and quantitative light detection with layered 2D semiconductors.

cond-mat.mtrl-sci↗

arXiv2022

Filtering electrons by mode coupling in finite semiconductor superlattices

Electron transmission through semiconductor superlattices is studied with transfer matrix method and resonance theory. The formation of electron band-pass transmission is ascribed to the coupling of different modes in those semiconductor superlattices with the symmetric unit cell. Upon Fabry-Pérot resonance condition, Bloch modes and two other resonant modes are identified to be related to the nature of the superlattice and its unit cell, respectively. The bands related to the unit cell and the superlattice overlap spontaneously in the tunneling region due to the shared wells, and the coupling of perfectly resonances results in the band-pass tunneling. Our findings provide a promising way to study electronic systems with more complicated superlattices or even optical systems with photonic crystals.

cond-mat.mes-hall↗

arXiv2021

Efficiency at maximum power of thermoelectric heat engines with the symmetric semiconductor superlattice

Efficiency at maximum power (EMP) is a very important specification for a heat engine to evaluate the capacity of outputting adequate power with high efficiency. It has been proved theoretically that the limit EMP of thermoelectric heat engine can be achieved with the hypothetical boxcar-shaped electron transmission, which is realized here by the resonant tunneling in the one-dimensional symmetric InP/InSe superlattice. It is found with the transfer matrix method that a symmetric mode is robust that regardless of the periodicity, and the obtained boxcar-like electron transmission stems from the strong coupling between symmetric mode and Fabry-Pérot modes inside the allowed band. High uniformity of the boxcar-like transmission and the sharp drop of the transmission edge are both beneficial to the maximum power and the EMP, which are optimized by the bias voltage and the thicknesses of barrier and well. The maximum power and EMP are extracted with the help of machine learning technique, and more than 95% of their theoretical limits can both be achieved for smaller temperature difference, smaller barrier width and larger well width. We hope the obtain results could provide some basic guidance for the future designs of high EMP thermoelectric heat engines.

cond-mat.mes-hall↗

arXiv2019

Coefficient of performance at maximum cooling power of a simplified quantum dot refrigerator model with resistance

A simplified analytical model of single-level quantum dot (QD) refrigerator was studied without considering the electron spin and Coulomb interaction. Based on the ballistic transport of electrons between two reservoirs across the QD, the Joule heat of the system was assumed to be generated from the Ohmic contacts between the QD and reservoirs. By using the transition rate equation, the performance of the QD refrigerator was studied with respect to the electron transmission probability and the partition ratio (i.e., the fraction of Joule heat generated in the system that releases into the cold reservoir). The analytical expression of the maximum coefficient of performance was obtained under the exoreversible working condition. The Carnot-bound-dependent coefficient of performance at maximum cooling power of the QD system was also demonstrated numerically. The results of this work may provide some guidance for the design of mesoscopic refrigerators.

cond-mat.mes-hall↗

arXiv2018

Strong magneto-optical response enabled by quantum two level systems

The magneto-optical effect breaks time-reversal symmetry, a unique property that makes it indispensable in nonreciprocal optics and topological photonics. Unfortunately, all natural materials have a rather weak magneto-optical response in the optical frequency range, posing a significant challenge to the practical application of many emerging device concepts. Here we theoretically propose a composite material system that exhibits an intrinsic magneto-optical response orders of magnitude stronger than most magneto-optical materials used today. This is achieved by tailoring the resonant interplay between the quantum electrodynamics of electronic transitions in two-level systems and the classical electromagnetic response of local plasmon resonance.

physics.optics↗

arXiv2016

Efficiency at maximum power of thermochemical engines with near-independent particles

Two-reservoir thermochemical engines are established in by using near-independent particles (including Maxwell-Boltzmann, Fermi-Dirac, and Bose-Einstein particles) as the working substance. Particle and heat fluxes can be formed based on the temperature and chemical potential gradients between two different reservoirs. A rectangular-type energy filter with width $Γ$ is introduced for each engine to weaken the coupling between the particle and heat fluxes. The efficiency at maximum power of each particle system decreases monotonously from an upper bound $η^+$ to a lower bound $η^-$ when $Γ$ increases from 0 to $\infty$. It is found that the $η^+$ values for all three systems are bounded by $η_{\mathrm{C}}/2 \leq η^+ \leq η_{\mathrm{C}}/(2-η_{\mathrm{C}})$ due to strong coupling, where $η_{\mathrm{C}}$ is the Carnot efficiency. For the Bose-Einstein system, it is found that the upper bound is approximated by the Curzon-Ahlborn efficiency: $η_{\mathrm{CA}}=1-\sqrt{1-η_{\mathrm{C}}}$. When $Γ\rightarrow\infty$, the intrinsic maximum powers are proportional to the square of the temperature difference of two reservoirs for all three systems, and the corresponding lower bounds of efficiency at maximum power can be simplified in the same form of $η^{-}=η_{\mathrm{C}}/[1+a_0(2-η_{\mathrm{C}})]$.

cond-mat.stat-mech↗

arXiv2015

A van der Waals pn heterojunction with organic/inorganic semiconductors

van der Waals (vdW) heterojunctions formed by two-dimensional (2D) materials have attracted tremendous attention due to their excellent electrical/optical properties and device applications. However, current 2D heterojunctions are largely limited to atomic crystals, and hybrid organic/inorganic structures are rarely explored. Here, we fabricate hybrid 2D heterostructures with p-type dioctylbenzothienobenzothiophene (C8-BTBT) and n-type MoS2. We find that few-layer C8-BTBT molecular crystals can be grown on monolayer MoS2 by vdW epitaxy, with pristine interface and controllable thickness down to monolayer. The operation of the C8-BTBT/MoS2 vertical heterojunction devices is highly tunable by bias and gate voltages between three different regimes: interfacial recombination, tunneling and blocking. The pn junction shows diode-like behavior with rectifying ratio up to 105 at the room temperature. Our devices also exhibit photovoltaic responses with power conversion efficiency of 0.31% and photoresponsivity of 22mA/W. With wide material combinations, such hybrid 2D structures will offer possibilities for opto-electronic devices that are not possible from individual constituents.

cond-mat.mes-hall↗

arXiv2014

A theoretical study on the performances of thermoelectric heat engine and refrigerator with two-dimensional electron reservoirs

Theoretical thermoelectric nanophysics models of low-dimensional electronic heat engine and refrigerator devices, comprising two-dimensional hot and cold reservoirs and an interconnecting filtered electron transport mechanism have been established. The models were used to numerically simulate and evaluate the thermoelectric performance and energy conversion efficiencies of these low-dimensional devices, based on three different types of electron transport momentum-dependent filters, referred to herein as: kx, ky and kr filters. Assuming the Fermi-Dirac distribution of electrons, expressions for key thermoelectric performance parameters were derived for the resonant transport processes, in which the transmission of electrons has been approximated as a Lorentzian resonance function. Optimizations were carried out and the corresponding optimized design parameters have been determined, including but not limited to the universal theoretical upper bound of the efficiency at maximum power for heat engines, and the maximum coefficient of performance for refrigerators. From the results, it was determined that kr filter delivers the best thermoelectric performance, followed by the kx filter, and then the ky filter. For refrigerators with any one of three filters, an optimum range for the full width at half maximum of the transport resonance was found to be <2kT .

cond-mat.mtrl-sci↗

arXiv2013

Plasmons in graphene: Recent progress and applications

Owing to its excellent electrical, mechanical, thermal and optical properties, graphene has attracted great interests since it was successfully exfoliated in 2004. Its two dimensional nature and superior properties meet the need of surface plasmons and greatly enrich the field of plasmonics. Recent progress and applications of graphene plasmonics will be reviewed, including the theoretical mechanisms, experimental observations, and meaningful applications. With relatively low loss, high confinement, flexible feature, and good tunability, graphene can be a promising plasmonic material alternative to the noble metals. Optics transformation, plasmonic metamaterials, light harvesting etc. are realized in graphene based devices, which are useful for applications in electronics, optics, energy storage, THz technology and so on. Moreover, the fine biocompatibility of graphene makes it a very well candidate for applications in biotechnology and medical science.

cond-mat.mtrl-sci↗